Direct whole-mount imaging of fungal spores by energy-filtering transmission electron microscopy

Whole-mount fungal spores were examined by energy-filtering transmission electron microscopy. Conidia of Penicillium species and Ustilaginoidea virens were suspended in distilled water and directly placed on a glow-discharged formvar-coated copper grid. Energy-filtered images were taken from 0 to 100eV loss regions. Due to their considerable inherent thickness, their globose morphology was evident. In zero-loss images, the fungal spores appeared to have higher contrast in general, showing darker periphery than unfiltered images. Most spores in zero-loss images exhibited almost homogeneous electron density across the spores. The contrast was partially inversed in low-loss images where more details of the outer cell wall ornamentations of spores could be discerned than zero-loss images. As obvious advantages of whole-mount spore imaging, it allows for ensuring two-dimensional images with higher spatial resolution than light microscopy and conventional scanning electron microscopy. If a higher resolution is needed to observe fungal surface structures such as fimbriae and rodlet layers, or discriminate an outer sheath enveloping spores, whole-mount spore imaging can be employed to unravel structural details.     

Improvement of femtosecond SPPs imaging by two-color laser photoemission electron microscopy

Clear imaging of surface plasmon polaritons (SPPs) is a prerequisite for SPPs-based applications. In this work, we demonstrate an improvement of near-field imaging of SPPs via directly comparing the visibility of the photoemission electron microscopy (PEEM) image of SPPs under one- and two-color laser excitation (also known as one- or two-color laser PEEM). By measuring the photoelectron yield and the contrast of the interference fringes of SPPs, we demonstrate that in addition to enhancing the photoemission yield, two-color laser PEEM can significantly improve the contrast between bright and dark fringes (nearly 4 times higher than that of one-color laser case). By recording the nonlinear order of the photoelectrons ejected from the bright and dark fringes, respectively, the underlying mechanism for the improved visibility is revealed. In addition, the influences of the polarization direction of 400-nm laser on the PEEM images of the SPPs with different wave vector directions are shown. These results can provide technical support for the development of SPPs-based communication devices and catalysis.     

Shell thickness determination of polymer-shelled microbubbles using transmission electron microscopy

Intravenously injected microbubbles (MBs) can be utilized as ultrasound contrast agent (CA) resulting in enhanced image quality. A novel CA, consisting of air filled MBs stabilized with a shell of polyvinyl alcohol (PVA) has been developed. These spherical MBs have been decorated with superparamagnetic iron oxide nanoparticles (SPIONs) in order to serve as both ultrasound and magnetic resonance imaging (MRI) CA. In this study, a mathematical model was introduced that determined the shell thickness of two types of SPIONs decorated MBs (Type A and Type B). The shell thickness of MBs is important to determine, as it affects the acoustical properties. In order to investigate the shell thickness, thin sections of plastic embedded MBs were prepared and imaged using transmission electron microscopy (TEM). However, the sections were cut at random distances from the MB center, which affected the observed shell thickness. Hence, the model determined the average shell thickness of the MBs from corrected mean values of the outer and inner radii observed in the TEM sections. The model was validated using simulated slices of MBs with known shell thickness and radius. The average shell thickness of Type A and Type B MBs were 651 nm and 637 nm, respectively.     

Lattice imaging of close-packed structures by high resolution electron microscopy: ABO3 perovskite polytypes

Lattice imaging technique of high resolution electron microscopy has been employed to examine 4H, 6H and 9R ABO₃ perovskite polytypes. The lattice images can be correlated with the lattice periodicity and the stacking sequence of AO₃ layers and BO₆ octahedra. The study shows the utility and validity of the lattice imaging technique for the study of relatively close-packed systems. Commonwealth Visiting Professor, University of Oxford (1974–75).     

GaN晶体中堆垛层错的高分辨电子显微像研究

借助高分辨电子显微像结合解卷处理的方法研究了GaN晶体中的堆垛层错.简要介绍了高分辨电子显微像的解卷处理原理，指出通过解卷处理可以把本来不直接反映待测晶体结构的高分辨电子显微像转换为直接反映晶体结构的图像.用高分辨电子显微像观察了GaN晶体中的堆垛层错，对高分辨电子显微像作了解卷处理.在解卷像上清晰可见缺陷核心的原子排列情况，据此确定了层错的类型.此外，还讨论了解卷处理在研究晶体缺陷中的效用. 关键词： GaN 晶体缺陷 高分辨电子显微学 解卷处理     

Holes drilling in gold and silver decahedral nanoparticles by the convergent beam electron diffraction electron beam

The 200?kV focused electron beam in the convergent beam electron diffraction patterns mode in a transmission electron microscope (TEM) with field emission gun is able to drill holes in gold and silver decahedral nanoparticles. However, although they are done under the same circumstances, the holes are shapeless in the silver and faceted in gold nanoparticles. In addition to this, the holes are closed during their high-resolution TEM observation in both materials. To comment their differences, displacement energy considerations are taken into account as function of the sputtering energy in order to modify the displacement cross-section of the processes.     

石墨烯的透射电子显微学研究

石墨烯（Graphene）是近几年迅速发展起来的研究热点材料之一.利用透射电子显微镜（TEM）研究Graphene的结构特征和原子动态过程,是 Graphene研究的重要进展.文章评述了利用透射电子衍射方法对Graphene的层数、堆垛方式、取向和表面形貌等结构特征进行的研究工作,介绍了利用高分辨透射电子显微术在Graphene的表面缺陷、边缘结构及吸附原子等研究领域取得的最新结果.     

Gadolinium oxide: a protoype agent for contrast enhanced imaging of the liver and spleen with magnetic resonance

Gd2O3 particles (less than 2 microns) in suspension were evaluated as a potential contrast agent for liver-spleen imaging with magnetic resonance. The agent was administered IV to rabbits in doses ranging from 10 to 120 mumol/kg and the tissues removed after sacrifice for in vitro T1 and T2 analysis. The temporal response was determined in liver and spleen samples of rabbits given a fixed dose (60 mumol/kg) and sacrificed at intervals from 15 min to 60 hr later. Documentation of the subanatomic location of Gd2O3 particles in tissue was accomplished by electron microscopy and x-ray dispersion microanalysis. T1 weighted images were obtained at 0.12T on a prototype resistive scanner. The liver, spleen, and lung relaxation times are very responsive to Gd2O3 IV and the effect is dose related. A peak effect is observed between 3-7 hr after injection and relaxation times may normalize by 60 hr. By electron microscopic and x-ray analysis, Gd2O3 is most prominently found in the hepatic and splenic sinusoids. The images show marked enhancement of liver and splenic tissues, aiding in the clear delineation of these tissues from neighboring structures.     

Phase change of CoTi and Co3Ti induced by MeV-scale electron irradiation

This study investigates equilibrium-to-nonequilibrium solid phase transitions induced by MeV-scale electron irradiation in B2-CoTi and L1₂-Co₃Ti intermetallic compounds by means of high-voltage electron microscopy. Under MeV-scale electron irradiation, B2-CoTi transforms into a body-centered cubic solid solution through chemical disordering and eventually transforms into an amorphous phase. The critical temperature for amorphisation is found to be 110 K. L1₂-Co₃Ti also exhibits chemical disordering at temperatures below 700 K. However, its amorphisation does not occur even at a low temperature of 20 K. The dominant factor in these solid phase transitions is discussed in terms of the Gibbs free energy.     

基于深紫外激光-光发射电子显微技术的高分辨率磁畴成像

基于磁二色效应的光发射电子显微镜磁成像技术是研究薄膜磁畴结构的一种重要研究手段,具有空间分辨率高、可实时成像以及对表面信息敏感等优点.以全固态深紫外激光(波长为177.3 nm;能量为7.0 eV)为激发光源的光发射电子显微技术相比于传统的光发射电子显微镜磁成像技术(以同步辐射光源或汞灯为激发源),摆脱了大型同步辐射光源的限制;同时又解决了当前阈激发研究中由于激发光源能量低难以实现光电子直接激发的技术难题,在实验室条件下实现了高分辨磁成像.本文首先对最新搭建的深紫外激光-光发射电子显微镜系统做了简单介绍.然后结合超高真空分子束外延薄膜沉积技术,成功实现了L10-FePt垂直磁各向异性薄膜的磁畴观测,其空间分辨率高达43.2 nm,与利用X射线作为激发源的光发射电子显微镜磁成像技术处于同一量级,为后续开展高分辨磁成像提供了便利.最后,重点介绍了在该磁成像技术方面取得的一些最新研究成果:通过引入Cr的纳米"台阶",成功设计出FePt的(001)与(111)双取向外延薄膜;并在"台阶"区域使用线偏振态深紫外激光观测到了磁线二色衬度,其强度为圆二色衬度的4.6倍.上述研究结果表明:深紫外激光-光发射电子显微镜磁成像技术在磁性薄膜/多层膜体系磁畴观测方面具备了出色的分辨能力,通过超高真空系统与分子束外延薄膜制备系统相连接,可以实现高质量单晶外延薄膜制备、超高真空原位传输和高分辨磁畴成像三位一体的功能,为未来磁性薄膜材料的研究提供了重要手段.     

Impact of dynamical scattering on quantitative contrast for aberration-corrected transmission electron microscope images

Aberration-corrected transmission electron microscope images taken under optimum-defocus conditions or processed offline can correctly reflect the projected crystal structure with atomic resolution. However, dynamical scattering, which will seriously influence image contrast, is still unavoidable. Here, the multislice image simulation approach was used to quantify the impact of dynamical scattering on the contrast of aberration-corrected images for a 3C-SiC specimen with changes in atomic occupancy and thickness. Optimum-defocus images with different spherical aberration (C_S) coefficients, and structure images restored by deconvolution processing, were studied. The results show that atomic-column positions and the atomic occupancy for SiC ‘dumbbells’ can be determined by analysis of image contrast profiles only below a certain thickness limit. This limit is larger for optimum-defocus and restored structure images with negative C_S coefficient than those with positive C_S coefficient. The image contrast of C (or Si) atomic columns with specific atomic occupancy changes differently with increasing crystal thickness. Furthermore, contrast peaks for C atomic columns overlapping with neighboring peaks of Si atomic columns with varied Si atomic occupancy, which is enhanced with increasing crystal thickness, can be neglected in restored structure images, but the effect is substantial in optimum-defocus images.     

Interference between resonance and potential scattering of high energy electrons from crystal surfaces

A solution of the tight-binding model of resonance diffraction of high-energy electrons from a crystal surface is found which describes the behaviour of the reflectivity in the vicinity of the intersection of a resonace parabola and a horizontal Kikuchi line. A simple analytical formula is obtained which makes it possible to evaluate the wave function for the case where both resonance and potential contributions to the reflectivity are of the same order of magnitude. The intensity of the specular reflection is shown to be directly related to the effective displacement Δ of the beam in the direction parallel to the surface, and a general formula suitable for evaluation of Δ from calculated RHEED rocking curves is derived.     

电子叠层衍射成像技术的突破及应用

像差校正透射电子显微镜是材料微观结构和物态高分辨率表征最常用的工具之一,极大地推动了相关学科的发展。近年来,电子显微学领域一个新的突破是电子叠层衍射成像技术。它突破了常规成像技术分辨率的极限,实现了原子晶格振动决定的终极分辨率,并且能够实现纳米尺度电磁物态的高精度成像。文章主要简述了电子叠层衍射成像技术的发展历程、原理和最新进展,最后讨论其应用前景和未来展望。     

Phase discrimination of iron-silicides on Si(0 0 1) surfaces by three-dimensional reciprocal-lattice mapping

Various iron-silicides are grown on clean Si(0 0 1) surfaces by solid phase epitaxy, a process which involves the deposition of iron and subsequent annealing [6]. Among them, we studied the structure of three-dimensional (3D) elongated islands, which are the major silicide type produced at lower Fe coverage (∼1 monolayer) and ?500-600 °C annealing. We applied a newly developed method of azimuth-scan reflection high-energy electron diffraction (RHEED) to obtain 3D reciprocal-lattice mapping. We succeeded in discriminating an α-FeSi₂ phase from controversial bulk phases of the islands, and we were also able to determine the orientation relation as and , where the lattice mismatches are −1% in direction and +34% in direction. The attenuation of the incident electron beam along the length direction of the islands leads to extremely weak spots in the RHEED pattern. We emphasize that such an analysis of the reciprocal-lattice mapping is also useful in studying other 3D island structures. Using scanning tunneling microscopy, we showed that the island’s elongated directions are perpendicular to the dimer rows of the substrate located under the islands. The islands are located near the S_B step edges. The elongation lengths of the islands are almost the same as the widths of the Si substrate terraces. We discussed the formation mechanism of the 3D-elongated islands. From an atomic image of the facet and edge of a 3D-elongated island, we proposed an atomic-structure model of the island facet and edge: a Si adatom on the hollow site of four Si atoms of an unit, with ordering in the direction of the elongation, forming an facet locally.     

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.     

直接积分法研究电子光学成像系统的时间像差理论

提出了计算动态电子光学成像系统时间像差系数的新方法——直接积分法.以阴极面逸出的轴向电子初能为ε_z1（0≤ε_z1≤ε_0max）的近轴电子 轨迹为比较 基准,给出了时间像差的定义,详细叙述了直接积分法并给出求解动态电子光学成像系统时 间像差系数的积分表达式.τ变分法求得的二级几何时间像差系数必须求解微分方程, 而直接积分法求得的二级几何时间像差系数全部以积分形式表示,仅需进行积分运算,更适 用于成像系统的实际计算与设计. 关键词： 电子光学成像系统 阴极透镜 动态电子光学 时间像差理论     

A method of correlative light and electron microscopy for yeast cells

Correlative light and electron microscopy (CLEM) is a method of imaging in which the same specimen is observed by both light microscopy and electron microscopy. Specifically, CLEM compares images obtained by light and electron microscopy and makes a correlation between them. After the advent of fluorescent proteins, CLEM was extended by combining electron microscopy with fluorescence microscopy to enable molecular-specific imaging of subcellular structures with a resolution at the nanometer level. This method is a powerful tool that is used to determine the localization of specific molecules of interest in the context of subcellular structures. Knowledge of the localization of target proteins coupled with the functions of the structures to which they are localized yields valuable information about the molecular functions of these proteins. However, this method has been mostly applied to adherent cells due to technical difficulties in immobilizing non-adherent target cells, such as yeasts, during sample preparation. We have developed a method of CLEM applicable to yeast cells. In this report, we detail this method and present its extension to Live CLEM. The Live CLEM method enabled us to link the dynamic properties of molecules of interest to cellular ultrastructures in the yeast cell. Since yeasts are premier organisms in molecular genetics, combining CLEM with yeast genetics promises to provide important new findings for understanding the molecular basis of the function of cellular structures.     

Atomic force microscopy and transmission electron microscopy of biocompatible magnetic fluids: A comparative analysis

The present study provides a comparative analysis of the size dispersity of magnetic nanoparticles (MNPs) within magnetic fluids as obtained from atomic force microscopy (AFM) and transmission electron microscopy (TEM). Whereas the mean particle diameter obtained from the AFM data presented a reduction of about 34% as compared to the value obtained from the TEM data, the standard deviation obtained from the AFM data is twice the value found from the TEM data. Similarities and differences in the size dispersity parameters are discussed in terms of sample preparation and tip characteristics. A two-dimensional mode for the deposition of the MNPs on top of the mica substrate is discussed as well.     

Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

We have fabricated parallel stripes of nanostructures in an n-type Si substrate by implanting 30 keV Ga⁺ ions from a focused ion beam (FIB) source. Two sets of implantation were carried out. In one case, during implantation the substrate was held at room temperature and in the other case at 400 °C. Photoemission electron microscopy (PEEM) was carried out on these samples. The implanted parallel stripes, each with a nominal dimension of 4000 nm × 100 nm, appear as bright regions in the PEEM image. Line scans of the intensities from the PEEM image were recorded along and across these stripes. The intensity profile at the edges of a line scan is broader for the implantation carried out at 400 °C compared to room temperature. From the analysis of this intensity profile, the lateral diffusion coefficient of Ga in silicon was estimated assuming that the PEEM intensity is proportional to Ga concentration. The diffusion coefficient at 400 °C has been estimated to be ∼1.3 × 10⁻¹⁵ m²/s. Across the stripes an asymmetric diffusion profile has been observed, which has been related to the sequence of implantation of these stripes and the associated defect distribution due to lateral straggling of the implanted ions.     

Variety of iron silicides grown on Si(0 0 1) surfaces by solid phase epitaxy: Schematic phase diagram

We systematically studied the formation of various iron-silicide phases, grown on Si(0 0 1) surfaces by solid phase epitaxy, with scanning tunneling microscopy, low-energy electron diffraction and reflection high-energy electron diffraction. We found and studied the phases of c(2 × 2) islands, rectangle-like islands, elongated islands, layered islands, dome-like islands, eddy and cracked structures, and small clusters. A schematic phase diagram of these phases is successfully summarized against iron coverage at room temperature and subsequent annealing temperature.