抛物量子点中强耦合磁极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合磁极化子的基态和激发态的性质。计算了基态和激发态磁极化子的束缚能以及磁极化子的共振频率。讨论了这些量对回旋频率和有效限制强度的依赖关系,以及磁极化子光学声子平均数的性质,结果表明:由于Zeeman劈裂,抛物量子点中磁极化子的回旋共振频率劈裂为两支。基态和激发态磁极化子的束缚能以及磁极化子的共振频率都随回旋频率的增加而增大,随量子点的有效束缚强度的增大而减小。     

量子点中强耦合极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合极化子的基态和激发态的性质。计算了基态和激发态极化子的结合能、光学声子平均数和极化子的共振频率。讨论了这些量对有效限制强度和电子 体纵光学声子耦合强度的依赖关系。结果表明:抛物量子点中极化子的共振频率、基态和激发态极化子的结合能以及光学声子平均数都随量子点的有效束缚强度的增大而减小。光学声子平均数随电子 体纵光学声子耦合强度的增加而增大。     

声子之间相互作用对量子点中极化子性质的影响

研究了抛物量子点中弱耦合极化子的性质。采用线性组合算符和微扰法,导出了抛物量子点中极化子的基态能量。当计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了对量子点中极化子的基态能量的影响。通过数值计算,结果表明,量子点中极化子基态能量随量子点的有效受限长度的减小而迅速增大,随电子-LO声子的耦合强度的增加而减少。当l₀>1.4时,声子之间的相互作用不能忽略。     

Retardation of the relaxation over quantum-well energy levels in CdSe/ZnS quantum dots with increasing number of excited carriers

The differential transmission spectra of CdSe/ZnS quantum dots are investigated. It is revealed that the differential transmission spectra measured upon resonant excitation of electrons into the first excited state 1P(e) exhibit a number of specific features, such as a decrease in transmission at the pump frequency, bleaching in the course of the pump pulse at frequencies corresponding to the fundamental optical transition 1S _3/2(h)-1S(e) and transitions between excited hole states and the 1S(e) electron ground state, and retardation of this process with an increase in the energy of the pump pulse. The observed specific features can be explained by the following factors: (i) the absence of a “phonon bottleneck” for electrons due to the energy transfer from hot electrons to rapidly relaxing holes, (ii) relaxation through intermediate quantum-well energy levels of holes, and (iii) retardation of relaxation with increasing number of excited charge carriers in a quantum dot.     

Coulomb oscillations of the current through spin-nondegenerate <Emphasis Type="Italic">p</Emphasis> states of InAs quantum dots

The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ～20 K. The Coulomb energy is found to be ΔE_c = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study.     

Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states.     

Zeeman effect for holes in a Ge/Si system with quantum dots

The tight binding approximation is employed to study the Zeeman effect for the hole ground state in a quantum dot. A method is proposed for calculating the g factor for localized states in a quantum dot. This method can be used both for hole states and for electron states. Calculations made for a Ge/Si system with quantum dots show that the g factor of a hole in the ground state is strongly anisotropic. The dependence of the g factor on the size of a germanium island is analyzed and it is shown that anisotropy of the g factor increases with the island size. It is shown that the value of the g factor is mainly determined by the contribution of the state with the angular momentum component J _z =±3/2 along the symmetry axis of the germanium island.     

Polaronic effects in asymmetric quantum wire: An all-coupling variational approach

An all-coupling variational calculation based on Lee-Low-Pines-Huybrechts (LLPH) theory is performed to study the ground state and the first excited state in an asymmetric polar semiconductor quantum wire that is valid for the entire range of the electron-phonon coupling constant and arbitrary confinement length. It is shown that the polaronic effects are very important and size dependent, if the effective width of the wire is reduced below a certain length scale. It is also shown that asymmetry in a quantum wire can be used as an extra parameter to increase the stability of the polaron. Finally the theory is applied to a realistic CdS quantum wire.     

A solitary wave of coherent excitonic polaritons in an extended chain of quantum dots

The propagation of ultrashort optical pulses in a chain of two-level two-electron quantum dots was studied theoretically. It was assumed that an excited state of an individual quantum dot can be transferred to the neighboring quantum dots, as is the case for a molecular exciton. As a result, optical-pulse motion is accompanied with a wave of polarization of quantum dots. It is shown that two types of steady-state circularly polarized solitary polaritonic waves can propagate along such chains; these are waves with exponentially and algebraically decaying leading and trailing edges.     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Dot-in-a-dot: electronic and photonic confinement in all three dimensions

We have studied the optical properties of three-dimensionally confined photon states in a spherical microcavity (the photonic dots) resonantly excited by photons emitted from semiconductor nanocrystals (the quantum dots). Glass and polymer microspheres with sizes of 2<R<10 are characterized by spatially and temporally resolved micro-photoluminescence. The role of nanocrystal position and orientation is analyzed experimentally and theoretically. The emission spectra of single, bulk and hollow microspheres impregnated with CdSe quantum dots and quantum rods are investigated and the modification of the quantum dot radiative lifetime by the three-dimensional photon confinement is discussed. PACS 78.66.Hf; 61.46.+w; 42.60.Da     

有限深抛物势量子盘中极化子的激发态性质

量子点作为一种重要的低维纳米结构, 近年来在单光子光源和新型量子点单光子探测器的研究引起了人们的广泛关注, 对各种势阱中量子点性质的研究已取得了重要成果. 但是大多理论研究都局限于无限深势阱, 而有限深势阱更具有实际意义. 利用平面波展开、幺正变换和变分相结合的方法研究了有限深势阱中极化子激发态能量及激发能随势阱形状和量子盘大小的变化规律. 数值计算结果表明: 极化子的激发态能量、激发能随势垒高度或宽度的增大而增大, 原因是势垒愈高、愈宽, 电子穿透势垒的可能性愈小, 电子在阱内运动的可能性愈大, 进而导致极化子的激发态能量和激发能均随势垒高度和宽度的增大而增大; 极化子的激发态能量和激发能随量子盘半径的增大而减小, 表明量子盘具有显著的量子尺寸效应; 极化子的激发态能量随有效受限长度的增加而减小, 原因是有效受限长度愈大, 有效受限强度愈小, 电子受到的束缚愈弱、振动愈慢、势能愈小, 进而导致基态能量、激发态能量减小; 同时由于激发态能量较基态能量减小慢, 使得激发能随之增加. 研究结果对量子点的应用具有一定的理论指导意义.     

AN EFFECTIVE APPROACH FOR TWO-DIMENSIONAL POLARONS IN AN ASYMMETRIC QUANTUM DOT

Within the framework of Feynman-Haken path integral theory, we calculate the ground-state energy of two-dimensional polarons in asymmetric quantum dots for arbitrary electron-phonon coupling constants. From a general three-dimensional Hamiltonian, some interesting problems, such as polarons in quasi-one-dimensional quantum wires and quasi-zero-dimensional asymmetric or symmetric quantum dots can be easily discussed only by taking different limit in the whole coupling regime. After the numerical calculation, we find that the relative polaronic correction increases monotonically with the decrease of effective dot size, and it becomes more pronounced with increasing dimension and asymmetry. Moreover, despite the insensitivity of relative polaronic enhancement to the variation of coupling constant at weak coupling, the correction is related to the coupling constant as the latter becomes larger.     

Eikonal approximation to 5D wave equations as geodesic motion in a curved 4D spacetime

We first derive the relation between the eikonal approximation to the Maxwell wave equations in an inhomogeneous anisotropic medium and geodesic motion in a three dimensional Riemannian manifold using a method which identifies the symplectic structure of the corresponding mechanics. We then apply an analogous method to the five dimensional generalization of Maxwell theory required by the gauge invariance of Stueckelbergs covariant classical and quantum dynamics to demonstrate, in the eikonal approximation, the existence of geodesic motion for the flow of mass in a four dimensional pseudo-Riemannian manifold. No motion of the medium is required. These results provide a foundation for the geometrical optics of the five dimensional radiation theory and establish a model in which there is mass flow along geodesics. Finally, we discuss the interesting case of relativistic quantum theory in an anisotropic medium as well. In this case the eikonal approximation to the relativistic quantum mechanical current coincides with the geodesic flow governed by the pseudo-Riemannian metric obtained from the eikonal approximation to solutions of the Stueckelberg-Schrödinger equation. This construction provides a model for an underlying quantum mechanical structure for classical dynamical motion along geodesics on a pseudo-Riemannian manifold. The locally symplectic structure which emerges is that of Stueckelbergs covariant mechanics on this manifold.This revised version was published online in April 2005. The publishing date was inserted.     

Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect X_XY valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect X valley of the conduction band of the AlAs matrix.     

抛物量子点中强耦合束缚极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合束缚极化子的基态和激发态的性质。计算了束缚极化子的基态和激发态的能量、光学声子平均数。讨论了量子点的有效束缚强度和库仑束缚势对基态能量、激发态能量以及光学声子平均数的影响。数值计算结果表明:量子点中强耦合束缚极化子的基态和激发态能量及光学声子平均数均随量子点的有效束缚强度的增加而减小,基态、激发态能量随库仑束缚势的增加而减小,光学声子平均数随库仑束缚势的增加而增大。     

Rayleigh-Schrödinger perturbation theory for electron-phonon interaction in two dimensional quantum dots with asymmetric parabolic potential

Within the framework of the second-order Rayleigh-Schr?dinger perturbation theory, we investigate the effects of the interaction of the electron and longitudinal-optical phonons in two-dimensional semiconductive quantum dots with respect to a general potential. We propose a simple expression for the ground state energy, and compare it with those obtained by Landau-Pekar strong coupling theory. It is shown both analytically and numerically that the results obtained from the second-order Rayleigh-Schr?dinger perturbation theory could be better than those from Landau-Pekar strong coupling theory when the coupling constant is sufficiently small. Moreover, some interesting problems, such as polarons in quasi-one-dimensional quantum wires, and quasi-zero-dimensional asymmetric or symmetric quantum dots can be easily discussed only by taking different limits. After the numerical calculations, we find that there exists a simple dimensional scaling and symmetry relation for the ground state polaron energy. Furthermore, we apply our results to some weak-coupling polar semiconductors such as GaAs, CdS. It is shown that the polaronic effects are found to be quiet appreciable if the confinement lengths and smaller than a few nanometers. Received: 3 December 1997 / Revised: 6 July 1998 / Accepted: 17 September 1998     

Spectroscopy of molecular states in a few-electron double quantum dot

Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented.     

The effect of impurity on transition frequency of bound polaron in quantum rods

The Hamiltonian of a quantum rod with an ellipsoidal boundary is given after a coordinate transformation that changes the ellipsoidal boundary into a spherical one. The properties of the quantum rods constituting the bridge between two-dimensional quantum wells, zero-dimensional quantum dots and one-dimensional quantum wires are explored theoretically using linear combination operator method. The first internal excited state energy, the excitation energy and the transition frequency between the first internal excited and the ground states of the strong-coupled impurity-bound polaron in the rod with Coulomb-bound potential, the transverse effective confinement length, the ellipsoid aspect ratio and the electron–phonon coupling strength are studied. It is found that the first internal excited state energy, the excitation energy and the transition frequency are increasing functions of the Coulomb-bound potential and the electron–phonon coupling strength, whereas they are decreasing functions of the ellipsoid aspect ratio and the transverse effective confinement length. These results can be attributed to the interesting quantum size confining effects.     

Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots

We study theoretically the time development of electronic relaxation in quantum dots. We consider the process of relaxation of the state with an electron prepared at the beginning of relaxation in the electronic ground state. We obtain a fast (in picoseconds) increase of electronic population in the excited state. Also, we consider the process of relaxation of an electron from an excited state in the dot. Here we obtain an incomplete depopulation of the electron from the excited state. We compare these results to experiments in which a fast decrease of luminescence is reported during the first period of relaxation after resonant excitation of the ground state. We estimate numerically the role of electron–LO–phonon (Fröhlich's coupling) mechanism in these processes. We show that this effect may be attributed to the influence of multiple scattering of quantum dot electrons on LO phonons. A single-electron two-energy-level quantum dot model is used to demonstrate this effect in an isolated semiconductor quantum dot.