A new magic titanium-doped gold cluster and orientation dependent cluster-cluster interaction

The stability and structures of titanium-doped gold clusters Au(n)Ti (n=2-16) are studied by the relativistic all-electron density-functional calculations. The most stable structures for Au(n)Ti clusters with n=2-7 are found to be planar. A structural transition of Au(n)Ti clusters from two-dimensional to three-dimensional geometry occurs at n=8, while the Au(n)Ti (n=12-16) prefer a gold cage structure with Ti atom locating at the center. Binding energy and second-order energy differences indicate that the Au(14)Ti has a significantly higher stability than its neighbors. A high ionization potential, low electron affinity, and large energy gap being the typical characters of a magic cluster are found for the Au(14)Ti. For cluster-cluster interaction between magic transition-metal-doped gold clusters, calculations were performed for cluster dimers, in which the clusters have an icosahedral or nonicosahedral structure. It is concluded that both electronic shell effect and relative orientation of clusters are responsible for the cluster-cluster interaction.     

Assessment of density functional theory optimized basis sets for gradient corrected functionals to transition metal systems: the case of small Nin (n<or=5) clusters

Density functional calculations have been performed for small nickel clusters, Ni(n), Ni(n) (+), and Ni(n)(-) (n相似文献   

First-principles studies on the reactions of O2 with silicon clusters

The reactions of an O(2) molecule with the neutral and positively charged Si(n)(n = 3-16) clusters are studied with first-principles calculations. Neutral Si(n)(n = 4,5,6,7,10,14) and charged Si(n) (+)(n = 4,5,6,7,13,15) clusters show higher inertness to O(2) molecule adsorption, which is in good agreement with experimental results. Both charge transfer and hybridizations between Si and O play an important role in the dissociative adsorption of O(2) molecule. We find that the spin triplet-single conversion of O(2) molecule is always accompanied with O(2) dissociatively chemisorbed on the Si(n) clusters.     

Structures and stability of medium-sized silicon clusters. III. Reexamination of motif transition in growth pattern from Si15 to Si20

It has been established from experiments that stable medium-sized ionic clusters Si15-Si20 are prolate in shape. Density-functional theories (DFTs) also predict that nearly all low-lying neutral clusters in this size range are prolate in shape. Moreover, most of them are built onto two generic structural motifs, either the tricapped-trigonal-prism (TTP) Si9 motif or the six/six Si6Si6 (sixfold-puckered hexagonal ring Si6 plus six-atom tetragonal bipyramid Si6) motif. However, it appears that the exact location of the TTP-to-six/six motif transition is dependent on the functional (e.g., PBE or BLYP) used in the DFT calculations. Here, we present total-energy calculations for two series of clusters (one series containing six/six motif and the other containing the TTP motif) in the size range of Si16-Si20. The calculations were based on all-electron DFT methods with a medium [6-311G (2d)] and a large (cc-pVTZ) basis sets, as well as coupled-cluster single and double substitutions (including triple excitations) [CCSD(T)] method with a modest (cc-pVDZ) basis set. In the DFT calculations, two popular hybrid density functionals, the B3LYP and PBE1PBE, were selected. It is found that the B3LYP total-energy calculations slightly favor the six/six motif, whereas the PBE1PBE calculations slightly favor the TTP motif. The CCSD(T) total-energy calculations, however, show that isomers based on the six/six motif are energetically slightly favorable in the size range of Si16-Si20. Hence, the TTP-to-six/six motif transition is more likely to occur at Si16.     

A theoretical study of bond energies in model Si–H–Cl molecules using density functional approaches for representing Si surface chemistry

The reliability of density functional theory (DFT) methods for calculating Si(SINGLE BOND)2H, Si(SINGLE BOND)Cl, and Si(SINGLE BOND)Si bond energies is examined in reactions involving molecules and small clusters representing various surface sites appropriate for Si surface chemistry. Results are presented for systematic studies using a valence double-zeta polarization basis for both all-electron calculations and valence–electron calculations employing effective core potentials (ECPs). All-electron DFT results are comparable to much more demanding MP4, G2, and MC–SCF–CI calculations for computed bond energies. Whereas the use of ECPs introduces systematic energy differences of ca. 3–5 kcal/mol compared to AE results, depending on the type of bond involved, the use of ECPs for carrying out calculations on larger clusters is discussed where AE calculations become more computationally demanding. The convergence of Si bond energies as a function of replacing hydrogens with silyl groups is examined. In constructing models to describe etching processes involving Cl species on Si surfaces, the need for incorporating differences in thermochemistries for one-, two-, and three-coordinate Si surface sites is emphasized. Comparisons of semiempirical approaches for thermochemistries of Si-containing species find these methods somewhat less reliable for obtaining reliable bond energies compared to computationally more demanding DFT and ab initio correlated models. © 1997 John Wiley & Sons, Inc. J Comput Chem 18 : 2075–2085, 1997     

Comparison of the growth patterns of Si(n) and Ge(n) clusters (n = 25-33)

We performed an unbiased search for low-energy structures of medium-sized neutral Si n and Ge n clusters ( n = 25-33) using a genetic algorithm (GA) coupled with tight-binding interatomic potentials. Structural candidates obtained from our GA search were further optimized by first-principles calculations using density functional theory (DFT). Our approach reproduces well the lowest-energy structures of Si n and Ge n clusters of n = 25-29 compared to previous studies, showing the accuracy and reliability of our approach. In the present study, we pay more attention to determine low-lying isomers of Si n and Ge n ( n = 29-33) and study the growth patterns of these clusters. The B3LYP calculations suggest that the growth pattern of Si n ( n = 25-33) clusters undergoes a transition from prolate to cage at n = 31, while this transition appears at n = 26 from the PBE-calculated results. In the size range of 25-33, the corresponding Ge n clusters hold the prolate growth pattern. The relative stabilities and different structural motifs of Si n and Ge n ( n = 25-33) clusters were studied, and the changes of small cluster structures, when acting as building blocks of large clusters, were also discussed.     

SinP+m(n+m=5)结构和稳定性的理论研究

在实验的基础上 ,利用量子化学方法对 Sin P+ m( n+m=5 )的各种可能构型进行几何构型优化 ,预测各团簇的稳定结构 ,从中得出各个团簇稳定构型之间的基本关系 ,当 n>m时 ,团簇的稳定构型与 Si+ n 相似 ,而当 n相似文献   

Structures and stability of medium silicon clusters. II. Ab initio molecular orbital calculations of Si12-Si20

Ab initio all-electron molecular-orbital calculations are carried out to study the structures and relative stability of low-energy silicon clusters (Si(n),n = 12-20). Selected geometric isomers include those predicted by Ho et al. [Nature (London) 392, 582 (1998)] based on an unbiased search with tight-binding/genetic algorithm, as well as those found by Rata et al. [Phys. Rev. Lett. 85, 546 (2000)] based on density-functional tight-binding/single-parent evolution algorithm. These geometric isomers are optimized at the M?ller-Plesset (MP2) MP2/6-31G(d) level. The single-point energy at the coupled-cluster single and double substitutions (including triple excitations) [CCSD(T)] CCSD(T)/6-31G(d) level for several low-lying isomers are further computed. Harmonic vibrational frequency analysis at the MP2/6-31G(d) level of theory is also undertaken to assure that the optimized geometries are stable. For Si12-Si17 and Si19 the isomer with the lowest-energy at the CCSD(T)/6-31G(d) level is the same as that predicted by Ho et al., whereas for Si18 and Si20, the same as predicted by Rata et al. However, for Si14 and Si15, the vibrational frequency analysis indicates that the isomer with the lowest CCSD(T)/6-31G(d) single-point energy gives rise to imaginary frequencies. Small structural perturbation onto the Si14 and Si15 isomers can remove the imaginary frequencies and results in new isomers with slightly lower MP2/6-31G(d) energy; however the new isomers have a higher single-point energy at the CCSD(T)/6-31G(d) level. For most Si(n) (n = 12-18,20) the low-lying isomers are prolate in shape, whereas for Si19 a spherical-like isomer is slightly lower in energy at the CCSD(T)/6-31G(d) level than low-lying prolate isomers.     

Utilizing relativistic effective core potentials for accurate calculations of molecular polarizabilities on transition metal compounds

The requirements necessary to extend an ECP basis set for the calculation of electric and linear optical properties to the transition metals are studied. Previously an augmentation of the SBK basis set for 39 elements with s and p electron only valences (H-Rn, excluding Ga, In, and Tl) [J. Comput. Chem., 2005, 26, 1464-1471] was presented. In this work, electric dipole moments, polarizabilities, and anisotropies of selected metal hydrides, sulfides, and bromides, cisplatin, and the Fe, Ru, and Os metallocene derivatives along with many other systems are calculated and discussed. ECP calculations of molecules containing 3d and 4d metal centers among main group atoms have good agreement, often within 1-2% of the all-electron result at the time-dependent Hartree-Fock (TDHF)/Sadlej level of theory. Molecules with a 5d metal center have a large difference from and are more accurate than the all-electron results due to the inclusion of relativistic effects in the ECPs. The polarizability as calculated with and without ECPs of metallic clusters and surfaces is increasingly different as atomic number increases, again due to a lack of relativistic effects in the all-electron calculations. The augmented ECP calculations are consistent with relativistic all-electron results, while the Sadlej calculations are consistent with other nonrelativistic results. Both relativistic and basis set effects are less noticeable when the metal is in a formally positive state.     

Size- and shape-dependent polarizabilities of sandwich and rice-ball Co(n)Bz(m) clusters from density functional theory

The dipole polarizabilities of Co(n)Bz(m), (n, m = 1-4, m = n, n + 1) clusters are studied by means of an all-electron gradient-corrected density functional theory and finite field method. The dipole moments are relatively large for most of the clusters, implying their asymmetric structures. The total polarizability increases rapidly as cluster size, whereas the average polarizability shows "odd-even" oscillation with relatively large values at (n, n + 1). The polarizabilities exhibit clear shape-dependent variation, and the sandwich structures have systematically larger polarizability and anisotropy than the rice-ball isomers. The dipole polarizabilities are further analyzed in terms of the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap, ionization potential, and electron delocalization volume. We conclude that the polarizability variations are determined by the interplay between the geometrical and electronic properties of the clusters.     

Charge-transfer processes in the assembly of Si(n)O(m) neutral clusters

The chemical bond formation in oxygen-rich Si(n)O(m) clusters was investigated by sampling the potential energy surface of the model systems SiO + SiO(2) → Si(2)O(3) and (SiO)(2) + SiO(2) → Si(3)O(4) along a two-dimensional reaction coordinate, by density functional theory calculations. Evidence for crossing between the weakly bound neutral-neutral (SiO)(n) + SiO(2) and the highly attractive ion-pair (SiO)(n)(+) + SiO(2)(-) surfaces was found. Analysis of frontier molecular orbitals and charge distribution showed that surface crossing involves transfer of valence electron charge from (SiO)(2) to SiO(2). The sum of the natural atomic charges over the (SiO)(n) and (SiO(2)) groups of the Si(n)O(m) cluster products, gave a net positive charge on the (SiO)(n) "core" and a net negative charge on the (SiO(2)) groups. This is interpreted as the "ion-pair memory" left on the Si(n)O(m) products by the charge-transfer mechanism and may provide a way to assess the role of charge-transfer processes in the assembly of larger Si(n)O(m) neutral clusters.     

Molecular dynamics implementation in MSINDO: study of silicon clusters

Born-Oppenheimer molecular dynamics is implemented in the semiempirical self-consistent field molecular orbital method MSINDO. The method is employed for the investigation of the structure and dynamics of silicon clusters of various sizes. The reliability of the present parameterization for silicon compounds is demonstrated by a comparison of the results of simulated annealing and of density functional calculations of Si(n) clusters (n = 5-7). The melting behavior of the Si(7) cluster is investigated and the MSINDO results are compared to previous high-level calculations. The efficiency of the present approach for the treatment of large systems is demonstrated by an extensive simulated annealing study of the Si(45) and Si(60) clusters. New Si(45) and Si(60) structures are found and evaluated. The relative stability of various energy minimum structures is compared with density functional calculations and available literature data.     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Silicon monohydride clusters Si(n)H (n = 4-10) and their anions: structures, thermochemistry, and electron affinities

The molecular structures, electron affinities, and dissociation energies of the Si(n)H/Si(n)H- (n = 4-10) species have been examined via five hybrid and pure density functional theory (DFT) methods. The basis set used in this work is of double-zeta plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. The geometries are fully optimized with each DFT method independently. The three different types of neutral-anion energy separations presented in this work are the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). The first Si-H dissociation energies, D(e)(Si(n)H --> Si(n) + H) for neutral Si(n)H and D(e)(Si(n)H- --> Si(n)- + H) for anionic Si(n)H- species, have also been reported. The structures of the ground states of these clusters are traditional H-Si single-bond forms. The ground-state geometries of Si5H, Si6H, Si8H, and Si9H predicted by the DFT methods are different from previous calculations, such as those obtained by Car-Parrinello molecular dynamics and nonorthogonal tight-binding molecular dynamics schemes. The most reliable EA(ad) values obtained at the B3LYP level of theory are 2.59 (Si4H), 2.84 (Si5H), 2.86 (Si6H), 3.19 (Si7H), 3.14 (Si8H), 3.36 (Si9H), and 3.56 (Si10H) eV. The first dissociation energies (Si(n)H --> Si(n) + H) predicted by all of these methods are 2.20-2.29 (Si4H), 2.30-2.83 (Si5H), 2.12-2.41 (Si6H), 1.75-2.03 (Si7H), 2.41-2.72 (Si8H), 1.86-2.11 (Si9H), and 1.92-2.27 (Si10H) eV. For the negatively charged ion clusters (Si(n)H- --> Si(n)- + H), the dissociation energies predicted are 2.56-2.69 (Si4H-), 2.80-3.01 (Si5H-), 2.86-3.06 (Si6H-), 2.80-3.03 (Si7H-), 2.69-2.92 (Si8H-), 2.92-3.18 (Si9H-), and 2.89-3.25 (Si10H-) eV.     

Photoelectron spectroscopy of silicon doped gold and silver cluster anions

Photoelectron spectra of low temperature silicon doped gold cluster anions Au(n)Si(-) with n = 2-56 and silver cluster anions Ag(n)Si(-) with n = 5-82 have been measured. Comparing the spectra as well as the general size dependence of the electron detachment energies to the results on undoped clusters shows that the silicon atom changes the apparent free electron count in the clusters. In the case of larger gold clusters (with more than about 30 gold atoms) the silicon atom seems to consistently delocalize all of its four valence electrons, while in the case of the silver clusters a less uniform behavior is observed. Here the silicon atoms act partly as electron donors, partly as electron acceptors, without following an obvious simple principle. Additionally some structural information can be obtained from the measured spectra: while Ag(54)Si(-) seems to adopt an icosahedral structural motif, Au(54)Si(-) seems to take on a low symmetry structure, much like the corresponding pure 55 atom clusters. This indicates that for such larger clusters the incorporation of a single silicon atom does not change the ground state geometry significantly.     

A theoretical study of the photodetachment and intramolecular hydrogen-bonding energies of hydrogen maleate anions

Three low-lying conformers of the hydrogen maleate anions (HMAs) regarding cis-HMA(HB) having the O-...HO intramolecular hydrogen bond (HB), cis-HMA(nHB) without the HB, and trans-HMA are studied by density functional theory (B3LYP) combined with natural bond orbital (NBO) and atoms-in-molecules (AIM) analyses. The photoelectron spectra of cis- and trans-HMA conformers recorded by Woo et al. (J. Phys. Chem. A 2005, 109, 10633) are reassigned on the basis of the present electron propagator theory calculations, indicating the significant energy differences between the Dyson orbitals and canonical molecular orbitals due to the electron-correlation and orbital relaxation effects considered in the electron propagator theory. The NBO associated with the natural resonance theory analyses and AIM electron topological study show that the strong O-...HO in cis-HMA(HB) has the remarkable characteristics of three-center four-electron hyperbond, and the bonding strength of ca. 30 kcal/mol is recommended with the reference calculations of the HO-...HOH complex. The further calculations for the microhydrated cis-HMA(HB) clusters indicate that the O-...HO bonding strength decreases in water solution.     

Structural and electronic properties of Si(n), Si(n)-, and PSi(n-1) clusters (2 < or = n < or = 13): Theoretical investigation based on ab initio molecular orbital theory

The geometric and electronic structures of Si(n), Si(n)-, and PSi(n-1) clusters (2 < or = n < or = 13) have been investigated using the ab initio molecular orbital theory formalism. The hybrid exchange-correlation energy functional (B3LYP) and a standard split-valence basis set with polarization functions (6-31+G(d)) were employed to optimize geometrical configurations. The total energies of the lowest energy isomers thus obtained were recalculated at the MP2/aug-cc-pVTZ level of theory. Unlike positively charged clusters, which showed similar structural behavior as that of neutral clusters [Nigam et al., J. Chem. Phys. 121, 7756 (2004)], significant geometrical changes were observed between Si(n) and Si(n)- clusters for n = 6, 8, 11, and 13. However, the geometries of P substituted silicon clusters show similar growth as that of negatively charged Si(n) clusters with small local distortions. The relative stability as a function of cluster size has been verified based on their binding energies, second difference in energy (Delta2 E), and fragmentation behavior. In general, the average binding energy of Si(n)- clusters is found to be higher than that of Si(n) clusters. For isoelectronic PSi(n-1) clusters, it is found that although for small clusters (n < 4) substitution of P atom improves the binding energy of Si(n) clusters, for larger clusters (n > or = 4) the effect is opposite. The fragmentation behavior of these clusters reveals that while small clusters prefer to evaporate monomer, the larger ones dissociate into two stable clusters of smaller size. The adiabatic electron affinities of Si(n) clusters and vertical detachment energies of Si(n)- clusters were calculated and compared with available experimental results. Finally, a good agreement between experimental and our theoretical results suggests good prediction of the lowest energy isomeric structures for all clusters calculated in the present study.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Electronic properties of liquid ammonia: a sequential molecular dynamics/quantum mechanics approach

The electronic properties of liquid ammonia are investigated by a sequential molecular dynamics/quantum mechanics approach. Quantum mechanics calculations for the liquid phase are based on a reparametrized hybrid exchange-correlation functional that reproduces the electronic properties of ammonia clusters [(NH3)n; n=1-5]. For these small clusters, electron binding energies based on Green's function or electron propagator theory, coupled cluster with single, double, and perturbative triple excitations, and density functional theory (DFT) are compared. Reparametrized DFT results for the dipole moment, electron binding energies, and electronic density of states of liquid ammonia are reported. The calculated average dipole moment of liquid ammonia (2.05+/-0.09 D) corresponds to an increase of 27% compared to the gas phase value and it is 0.23 D above a prediction based on a polarizable model of liquid ammonia [Deng et al., J. Chem. Phys. 100, 7590 (1994)]. Our estimate for the ionization potential of liquid ammonia is 9.74+/-0.73 eV, which is approximately 1.0 eV below the gas phase value for the isolated molecule. The theoretical vertical electron affinity of liquid ammonia is predicted as 0.16+/-0.22 eV, in good agreement with the experimental result for the location of the bottom of the conduction band (-V 0=0.2 eV). Vertical ionization potentials and electron affinities correlate with the total dipole moment of ammonia aggregates.     

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.