Monte Carlo simulation of liquid neopentane

Monte Carlo simulations are reported for liquid neopentane at 25°C and 0·592 g cm^-3 using three different potential models. These results are compared with X-ray diffraction data and simulations for other tetrahedral molecules.     

液态~4He系统对关联函数的路径积分蒙特卡罗模拟

利用路径积分蒙特卡罗(PIMC)模拟方法研究了由256个4He原子组成的系统在不同条件下的对关联函数g(r).在标准大气压下(SVP),分别在1.38K,1.67K,2.50K和4.24K等四个温度时对系统不同势能的情况的对关联函数进行了计算;另外还讨论了系统的温度和密度对对关联函数的影响.结果发现,系统的势能变化及密度变化都或大或小影响对关联函数,而温度对其影响不是很大.虽然PIMC方法存在有限尺度效应,但是由128和256个4He原子组成系统的对关联函数存在极小的差异,因此可以得到:随着模拟系统尺度的增大,所模拟的有限尺度的系统已逐渐接近于真实系统.所以所得的256原子系统的性质可近似说明液态系统性质.     

A Monte Carlo simulation study of associated liquid crystals

We have performed a Monte Carlo simulation study of a system of ellipsoidal particles with donor—acceptor sites modelling complementary hydrogen-bonding groups in real molecules. We have considered elongated Gay—Berne particles with terminal interaction sites allowing particles to associate and form dimers. The changes in the phase transitions and in the molecular organization and the interplay between orientational ordering and dimer formation are discussed. Particle flip and dimer moves have been used to increase the convergency rate of the Monte Carlo (MC) Markov chain.     

Monte Carlo simulation of the Neutrino-4 experiment

Monte Carlo simulation of the two-section reactor antineutrino detector of the Neutrino-4 experiment is carried out. The scintillation-type detector is based on the inverse beta-decay reaction. The antineutrino is recorded by two successive signals from the positron and the neutron. The simulation of the detector sections and the active shielding is performed. As a result of the simulation, the distributions of photomultiplier signals from the positron and the neutron are obtained. The efficiency of the detector depending on the signal recording thresholds is calculated.     

Quantum Monte Carlo simulation of the dynamics of the spin-boson model

This paper presents the results of stationary-phase Monte Carlo simulations for the dynamics of the spin-boson problem. The problem of alternating weights ubiquitous in dynamical simulations has been solved using discretized path-integral simulations in conjunction with stationary-phase filtering techniques. Our computation covers the bulk of the parameter space, including non-zero bias and frequency-dependent dissipation. Besides a comparison with analytic predictions, we present some new results. For sub-Ohmic dissipation, the dynamics at low temperatures depends significantly on the initial preparation. In the Ohmic regime 1/2<K<1, whereK is Kondo's dimensionless coupling strength, we find significant deviations from the predictions of the non-interacting blip approximation at long times and low temperatures.     

Path integral Monte Carlo calculations of4He and6Li

We have performed Monte Carlo calculations to estimate the exact energies of model problems for⁴He and theL=0,1, and 2 states of⁶Li. Using a Feynman path-integral expression for the imaginary-time evolution operator, we recast the ground state energy as a sum over histories, which are then sampled stochastically. Use of a trial wave function dramatically improves the efficiency of the Monte Carlo method. For a state-independent Malfliet-Tjon potential, together with the Coulomb interaction, we find a ground state energy of ?28.00+0.20 MeV for⁴He, and a degeneracy of theL=0,1, and 2 states in⁶Li at about ?59.65+-0.50 MeV. Density distributions for these nuclei are also calculated.     

Quantum Monte Carlo simulation of the high-pressure molecular-atomic crossover in fluid hydrogen

A first-order liquid-liquid phase transition in high-pressure hydrogen between molecular and atomic fluid phases has been predicted in computer simulations using ab initio molecular dynamics approaches. However, experiments indicate that molecular dissociation may occur through a continuous crossover rather than a first-order transition. Here we study the nature of molecular dissociation in fluid hydrogen using an alternative simulation technique in which electronic correlation is computed within quantum Monte Carlo methods, the so-called coupled electron-ion Monte Carlo method. We find no evidence for a first-order liquid-liquid phase transition.     

Monte Carlo simulation of mictomagnets

Monte Carlo simulations of a binary alloy with impurity concentrations between 20 and 45 at.% have been carried out. The proportion of large clusters relative to that of small clusters increases with the number of MC diffusion steps as well as impurity concentration. Magnetic susceptibility peaks become more prominent and occur at higher temperatures with increasing impurity concentration. The different peaks in the susceptibility and specific heat curves seem to correspond to different sized clusters. A freezing model would explain the observed behaviour with the large clusters freezing first and the small clusters contributing to susceptibility (specific heat) peaks at lower temperatures.Contribution No. 153 from the Solid State and Structural Chemistry Unit     

Efficient kinetic Monte Carlo simulation

This paper concerns kinetic Monte Carlo (KMC) algorithms that have a single-event execution time independent of the system size. Two methods are presented—one that combines the use of inverted-list data structures with rejection Monte Carlo and a second that combines inverted lists with the Marsaglia–Norman–Cannon algorithm. The resulting algorithms apply to models with rates that are determined by the local environment but are otherwise arbitrary, time-dependent and spatially heterogeneous. While especially useful for crystal growth simulation, the algorithms are presented from the point of view that KMC is the numerical task of simulating a single realization of a Markov process, allowing application to a broad range of areas where heterogeneous random walks are the dominate simulation cost.     

Quantum Monte Carlo calculations of light nuclei

Quantum Monte Carlo calculations using realistic two- and three-nucleon interactions are presented for nuclei with up to ten nucleons. Our Green's function Monte Carlo calculations are accurate to ∼1-2% for the binding energy. We have constructed Hamiltonians using the Argonne v₁₈ NN interaction and reasonable three-nucleon interactions that reproduce the energies of these nuclear states with only ∼500 keV rms error. Other predictions, such as form factors, decay rates, and spectroscopic factors also agree well with data. Some of these results are presented to show that ab initio calculations of light nuclei are now well in hand. Received: 1 May 2001 / Accepted: 4 December 2001     

Finite Size Effect in Path Integral Monte Carlo Simulations of 4He Systems

Path integral Monte Carlo (PIMC) simulations are a powerful computational method to study interacting quantum systems at finite temperatures. In this work, PIMC has been applied to study the finite size effect of the simulated systems of ⁴He. We determine the energy as a function of temperature at saturated-vapor-pressure (SVP) conditions in the temperature range of T∈[1.0 K, 4.0 K], and the equation of state (EOS) in the ground state for systems consisted of 32, 64 and 128 ⁴He atoms, respectively. We find that the energy at SVP is influenced significantly by the size of the simulated system in the temperature range of T∈[2.1 K, 3.0 K] and the larger the system is, the better results are obtained in comparison with the experimental values; while the EOS appeared to be unrelated to it.     

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.