共查询到15条相似文献,搜索用时 93 毫秒
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用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。 相似文献
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早先,我们曾报导过玻璃粘结的GaAs光阴极的工艺及性能。简言之,它的结构是:GaAs(基底)—AlGaAs—GaAs—AlGaAs—SiO_2—7056玻璃。半导体层以通常的液相外延形成。SiO_2以化学汽相沉积形成,它作为增透膜并防止与玻璃牯结的AlGaAs表面的氧化。 相似文献
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为了提高器件的可靠性和使用寿命,设计并研制了一种将p-n结和有源层分开的高功率AlGaAs/GaAs单量子阱远异质结(SQW-RJH)激光器,发射波长为808nm,腔长900μm,条宽100μm,其外延结构与通常的808nm AlGaAs/GaAs单量子阱半导体激光器的结构不同,在p-n结和有源区间多了一层p型AlGaAs层,其厚度约为0.1μm。为减小衬底表面位错对外延层质量的影响,在n^ -GaAs衬底和n-Al0.5Ga0.5As下包层间加一层n^ -GaAs缓冲层。对器件进行了电导数测试及恒流电老化实验。与常规AlGaAs/GaAs大功率半导体激光器相比,远结大功率半导体激光器具有阈值电流Ith偏大、导通电压Vth偏高的直流特性。3000h的恒流电老化结果表明,器件在老化初期表现出阈值电流随老化时间缓慢下降,输出功率随老化时间缓慢上升的远结特性。 相似文献
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GaAs/Ge的MOCVD生长研究 总被引:3,自引:3,他引:0
用常压MOCVD在Ge衬底上外延生长了GaAs单晶层,研究了GaAs和6e的极性与非极性材料异质外延生长,获得了质量优良的GaAs/Ge外延片,GaAs外延层X射线双晶衍射回摆曲线半高宽达16弧秒.10K下PL谱半峰宽为7meV.讨论了极性与非极性外延的界面反相畴问题和GaAs-Ge界面的Ga、Ge原子互扩散问题. 相似文献
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A.A. Shakhmin M.V. Zamoryanskaya I.N. Arsentyev S.G. Konnikov D.A. Vinokurov A.L. Stankevich I.S. Tarasov 《Superlattices and Microstructures》2009,45(4-5):376-382
The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures. 相似文献
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Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
M. V. Weckwerth J. A. Simmons N. E. Harff M. E. Sherwin M. A. Blount W. E. Baca H. C. Chui 《Superlattices and Microstructures》1996,20(4):561-567
The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (3000Å) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The original substrate is removed leaving only the original epitaxial structure expoxied to the host substrate. The exposed backside of the epitaxial structure may then be processed. Because the structures fabricated using this technique are so thin, mesas, Schottky gates, and ohmic contacts may be defined in close proximity both above and below the active device layers. 相似文献
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用高分辨率多晶多反射X射线衍射仪进行衍射空间的二维扫描是目前非损伤性表生半导体材料质量的手段之一。不同质量的材料在二维衍射空间中的衍射图形状不同。本文以GaAS/AlGaAs为例,展示了如何利用X射线的二维衍射空间图的形状来定性地分析半导体单晶样品的宏观弯曲,微观倾斜,组分梯度,应变,弛豫以及平行于界面的连续性等问题。 相似文献
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透射式GaAs光电阴极激活技术研究 总被引:3,自引:0,他引:3
通过对成像器件GaAs负电子亲合势(NEA)光电阴极激活技术的研究,运用分析仪器进行工艺质量在线监测,在大、薄、匀的GaAs外延层激活出的台内阴极灵敏度大于1300μA/lm。 相似文献