Basic thermoluminescent and dosimetric properties of Al2O3:C irradiated by pulse intensive electron beam

The effect of deep traps filled by a pulse electron beam on the thermoluminescent (TL) properties in Al₂O₃:C dosimetric crystals is studied. When the deep traps are filled, the dosimetric peak at 170 °C acquires a double-peak structure not present in the initial samples. The effect of the population of the deep centers having various nature (electron or hole traps) and energy depth on the shape of the dosimetric TL peak structure is analyzed. An assumption is made that in the temperature ranges of 350–500 °C and 650–750 °C, electron traps are emptied, whereas at T = 500–650 °C hole traps are emptied. The possibility of using the TL associated with deep traps in high-dose dosimetry of pulse electron beams is shown.     

Phototransferred Thermoluminescence of Dosimetric α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Crystals Irradiated by a Pulsed Electron Beam

The thermoluminescence (TL) of deep traps of anion-defective alumina monocrystals irradiated by a high-dose (more than 1 kGy) pulsed electron beam (130 keV) is studied. The deep traps in the studied material are classified according to the TL temperature range. It is demonstrated that the phototransferred thermoluminescence (PTTL) in the temperature range of the main TL peak is induced by optical charge migration from deep traps that are emptied at 400–470 and 470–600°C. An anomalous PTTL enhancement in crystals subjected to stepped annealing in the 350–400°C interval is observed. It is demonstrated that this effect may be caused by competing processes of charge transfer that involve deep traps corresponding to the TL peak at 390°C. The applicability of PTTL in the dosimetry of high-dose (1–50 kGy) pulsed electron beams is established.     

The contribution of hole traps to thermoluminescence of the dosimetric peak in anion-defect α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> single crystals

The thermoluminescent properties of anion-defect alumina single crystals with different FWHMs of the main (dosimetric) peak at 400–500 K are studied. New experimental evidence in favor of the hole nature of traps associated with the high-temperature part of this peak are presented. The introduction of hole trap centers into analysis provided theoretical justification for the experimentally observed dependences of the thermoluminescence (TL) intensity, the temperature position of the main peak, and its FWHM on the occupancy of deep traps. The hole nature of traps of the high-temperature part of the main TL peak is confirmed by the results of examination of specific TL features of shallow trap centers, which govern TL at 350 K, and the temperature variation of the main TL peak spectrum.     

Luminescent and dosimetric properties of nanostructured ceramics based on aluminum oxide

The main features of thermoluminescence (TL) of nanostructured ceramics based on anion-defective aluminum oxide have been investigated. The kinetic parameters of the TL dosimetric peak at 475 K have been determined. The possibility of using nanostructured ceramics for beta-radiation dosimetry of high doses (up to 1 kGy) with thermoluminescence of deep traps has been justified. It has been found that the light sum of the dosimetric peak decreases with an increase in the heating rate due to the temperature quenching of the luminescence. The obtained results have confirmed that the mechanism of TL quenching in anion-defective aluminum oxide is associated with the temperature dependence of the probability of the capture in deep traps, which can be caused by thermal ionization of excited states of F-centers.     

The effects of deep trap population on the thermoluminescence of Al2O3:C

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al₂O₃:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F⁺-centers. The data lead to the suggestion that the competing deep traps which become unstable at 800–875 K are hole traps, and that the competing deep traps which become unstable at 1100–1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.     

On the role of hole trapping centers in the interactive mechanism of the trap interaction in anion-defect alumina single crystals

The effect of deep hole traps on the intensity and shape of the dosimetric peak of thermoluminescence (TL) has been studied at 450 K in anion-defect alumina single crystals. It has been shown that filling of deep hole centers leads to a decrease in the sensitivity to radiation of crystals with a small half-width of the TL peak and has no effect on the sensitivity of crystals with a broadened peak. It has been assumed that traps responsible for the TL dosimetric peak broadening are of hole nature, which can be caused by the presence of Ti3+ ions in the corundum lattice. The results obtained have been interpreted within the modified model of the interactive system of traps.     

Effect of deep traps on sensitivity of TLD-500 thermoluminescent detectors

It is studied experimentally how the dosimetric sensitivity in the dosimetric thermoluminescence (TL) peak at 450 К in TLD-500 detectors depends on the occupancy of deep traps by charge carriers of unlike signs. A kinetic model for the TL of F-centers taking into account the nonradiative capture of electrons in deep hole traps is proposed. The model explains the variation dynamics of the dosimetric sensitivity and dependences of the TL output on the heating rate during filling of deep centers.     

Optically Induced Effects in the Thermoluminescence of Dosimetric Anion-Defective Corundum Crystals

This paper considers the influence of light fluxes in the 200–600-nm spectral range on the thermally stimulated luminescence (TL) of TLD-500 radiation detectors based on anion-defective corundum crystals. It has been shown that the luminescent-storing action of light in the above spectral range is due to the optical ionization of F-centers and electronic trapping centers of carriers responsible for the dosimetric peak at 450 K and TL at higher temperatures. The features of the dosimetric information distortion depending on the initial state of population of deep traps and the spectral composition and power of optical radiation are discussed.     

Features of thermoluminescence in anion-defective alumina single crystals after highdose irradiation

The effect of high-dose irradiation by electron beam with nanosecond duration and by gamma-rays on thermoluminescence (TL) yield of anion-defective dosimetric Al₂O₃:С crystals is studied. It is shown that in a wide dose range up to 10 kGy no significant changes in the TL curve shape and the temperature position of the main dosimetric peak (T = 460 K) are observed. The TL yield of this peak is in saturation in the high-dose range 5–80 kGy. Then anomalous increase in TL yield is registered at the dose growth up to 800 kGy. With that an intensive band appears in the green spectrum region in the photoluminescence spectrum. The role of aggregate defects forming F₂-type centers with the increase of TL yield in Al₂O₃:С crystals under high-dose irradiation is discussed.     

Nature of the anomalies of the thermolumenescence properties of dosimetric α-Al2O3 crystals

The results of investigations into the anomalies of the thermoluminescence properties of dosimetric corundum crystals are presented. The decisive role of deep-lying traps in the quenching of luminescence in anion-defect Al₂O₃ monocrystals is shown. The existence of deep-lying traps is demonstrated by the method of direct observations of thermoluminescence (TL) peaks associated with them. Experimental evidence for the influence of the degree of occupation of deep-lying traps on the main features of the TL dosimetric peak at 450 K is given. The results obtained are interpreted for a model of the interactive system of traps, which differs radically from the models described in the literature by a consideration of the temperature dependence of the probability of trapping of charge carriers on deep-lying traps. We believe that the heat quenching of luminescence is due to the thermal ionization of excited F-center states. Ural State Technical University. Translated from Izvestiya Vysshikh Uchebhykh Zavedenii, Fizika, No. 3, pp. 55–65, March, 2000.     

White light-emitting diodes for optical stimulation of aluminium oxide in OSL dosimetry

The results of comparative investigations into the optically stimulated luminescence (OSL) of anion-defective corundum excited by radiation of blue and white light-emitting diodes (LEDs) are reported. The continuous-wave OSL (CW-OSL) measurements showed that the white LED (compared to the blue LED) and the chosen geometry allow the amplitude of the OSL response to increase by a factor of more than 40 and the dosimetric information readout time to decrease by a factor of 20.The effect of deep traps on the behavior of the CW-OSL curves of anion-defective corundum was studied. It was found that the filling of deep traps essentially increases the TL yield with a dosimetric peak at 450 K and the CW-OSL-yield under stimulation with blue and white LEDs. It was also found that this filling causes a considerable change in the shape of the OSL curve and the time parameters of the decay.     

Interactive process in the mechanism of thermostimulated luminescence in anion-defect α-Al2O3 crystals

A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al₂O₃ single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model involving trap interaction is proposed, which differs radically from the others described in the literature by taking into account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study (TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally. Fiz. Tverd. Tela (St. Petersburg) 40, 229–234 (February 1998)     

Effect of temperature on the luminescence processes of SrAl2O4:Eu

The UV excited and persistent luminescence properties as well as thermoluminescence (TL) of Eu²⁺ doped strontium aluminates, SrAl₂O₄:Eu²⁺ were studied at different temperatures. Two luminescence bands peaking at 445 and 520 nm were observed at 20 K but only the latter at 295 K. Both Sr-sites in the lattice are thus occupied by Eu²⁺ but at room temperature efficient energy transfer occurs between the two sites. The UV excited and persistent luminescence spectra were similar at 295 K but the excitation spectra were different. Thus the luminescent centre is the same in both phenomena but excitation processes are different. Two TL peaks were observed between 50 and 250 °C in the glow curve. Multiple traps were, however, observed by preheating and initial rise methods. With longer delay times only the high temperature TL peak was observed. The persistent luminescence is mainly due to slow fading of the low temperature TL peak but the step-wise feeding process from high temperature traps is also probable.     

Luminescent and dosimetric properties of ultrafine magnesium oxide ceramics after high dose irradiation

The luminescent and dosimetric properties of ultrafine MgO ≿eramics synthesized in strongly reducing conditions at Т = 1100–1400 °С are investigated. The growth of photo- and cathodoluminescence output at 2.0–3.5 eV (400–600 nm) is found. It is due to an increase in concentration of single oxygen vacancies and their aggregates. It was established that thermal treatment leads to TL intensity growth after high dose irradiation of the samples by a pulsed electron beam (130 keV). The tunneling mechanism of charge carriers' recombination occurs after this treatment as well. The presence of tunneling recombination is proved by the analysis of the shape and temperature dependence of TL isothermal decay curves. The possibility of using synthesized ceramics for high dose TL dosimetry of ionizing radiations is shown.     

Restored thermoluminescence in oxide crystals

In this paper, we present the results of a thermoluminescence study on several oxide crystals, including Y₃Al₅O₁₂ (YAG), Y₃Al₅O₁₂:Nd (YAG:Nd), Lu₂SiO₅:Ce (LSO:Ce), Y₂SiO₅:Ce (YSO:Ce), Gd₂SiO₅:Ce (GSO:Ce), PbWO (PWO), and PbWO:La (PWO:La). A phenomenon involving restoration of thermoluminescence (TL) glow peaks is found to occur in some of the crystals investigated; crystals γ-irradiated at room temperature and subsequently stored for some time in the dark at 77 K exhibit TL glow peaks in the range below room temperature. This phenomenon is caused not by a thermally or optically stimulated process, but rather as a by-product of a tunneling process. The intensity of the restored TL glow peaks measured in LSO:Ce crystals is found to be proportional both to the radiation dose and to the storage-time at low temperature. A phenomenological theoretical model is proposed, in which tunneling recombination occurs between deep electron and hole traps accompanied by the simultaneous ejection of an electron to the conduction band; some of these conduction electrons then repopulate shallow traps. An oxygen vacancy with two trapped electrons is assumed to be the deep electron trap in this model. The role of oxygen vacancies is confirmed by heating in air at 1000 °C. This model is applied specifically to LSO:Ce, and several possible candidates are suggested for shallow traps in that material.     

Features of OSL and TL properties of anion-defective corundum crystals exposed to thermo-optical treatment

The results of systematic investigation of the mechanisms and role of phototransfer in TL and OSL processes in α-Al₂O_3−δ crystals under controlled filling of the main and deep traps depleted at 450 and 720 K, respectively, are presented.Optical depletion spectra of the main and deep traps were measured and compared. It was found that green light stimulation only depletes the main trap, while blue light depletes both the main and deep traps. Optical depletion of the deep trap results in phototransfer of charges that can be realized by 2 mechanisms: either through the main trap to recombination centers or directly to the latter. However, the dominant contribution to the OSL signal is provided by phototransfer through the main trap. It is also found that UV emission at 3.7 eV dominates over F-emission at 3.0 eV in the phototransferred TL spectrum. It is assumed that this UV emission is not related to the F⁺ centers.     

掺Gd3+,Y3+对PbWO_4低温热释光的影响

通过热释光方法研究了PbWO₄(PWO),PWO:Y³⁺,PWO:Gd³⁺多晶粉末及PWO,PWO:Y单晶的低温(<300K)热释光现象.多晶粉末中,掺杂Y³⁺或Gd³⁺都会大大降低甚至消除200K附近的热释光峰,同时产生新的热释光峰,分别位于125和150K(掺Y掺Gd).这表明掺三价离子除了起到电荷补偿作用以减少Pb³⁺,O^-浓度外,还可以产生新的陷阱能级.对于PWO:Y单晶,掺杂Y³⁺可以消除253K的热释光峰,即消除较深(～0.89eV)的陷阱,但PWO单晶中较浅的陷阱(～0.42eV)对应130K热释光峰仍然存在,对此进行讨论,它最可能源于氧空位缺陷.根据Pb³⁺,Gd³⁺,Y³⁺的电子库仑势不同,在PWO晶体中替代Pb²⁺后形成的电子陷阱深度有别(E_Pb>E_Gd>E_Y),从而解释了相应的热释光峰值温度的不同 关键词： 4')" href="#">PbWO₄ Y和Gd掺杂 热释光 陷阱     

Focused ion beam fabrication and magneto-electrical transport properties of La0.67Ca0.33MnO3 nanobridge

La_0.67Ca_0.33MnO₃ particle films with an average particle size of ~150 nm were grown on single-crystal silicon substrate using pulsed electron deposition technique and then focused ion beam was introduced to fabricate nanobridge in size of 300 × 900 nm on the particle film. The magneto-transport properties of both samples were studied. For the film, there is only one resistance peak at 182 K in temperature-dependent resistance (R–T) curves, which is far lower than ferromagnetic–paramagnetic transition temperature (T _C) of 250 K. When compared to the film, double peaks were observed in both R–T curves and magnetoresistance dependent on temperature (MR–T) curves of the nanobridge, one peak is at 186 K, which is very close to metal–insulator transition temperature (T _P) of film, the other one is at 250 K, which is close to the T _C of film, and these two peaks caused separately by grain and grain boundary (GB), which demonstrated that the electrical transport behavior of grain was separated from that of GB.     

Optical depth of traps in AL2O3:C determined by the variable energy of stimulation OSL (VES-OSL) method

Standard methods of OSL measurements (CW-OSL or LM-OSL) do not allow for the direct determination of optical depth of traps. The variable energy of stimulation optically stimulated luminescence (VES-OSL) method gives such possibility. It consists in optical stimulation with the continuous increase of stimulation light energy and is analogous to the glow curve method in TL measurements. The VES-OSL curve shape and maximum position can be regulated by the stimulation photon flux, the rate of stimulation energy increase and by measurement temperature. This allows for detecting the OSL from very deep traps that give the TL signal overlapping with strong incandescence. The VES-OSL measurements carried out for Al₂O₃:C showed that traps having the optical depth between 2.0 and 2.8 eV are responsible for the OSL signal related to TL peak at about 200 °C. The OSL signal from the much deeper traps from the range 2.8–3.3 eV was also detected. The TL signal related do these traps cannot be detected below 500 °C.     

Radio- and thermoluminescence of single-doped and codoped lithium-sodium sulfate

Radioluminescence at room temperature and thermoluminescence (TL) measurements of single-doped and codoped LiNaSO₄ above room temperature are reported here. The codoped samples were studied to investigate the possibility of enhancing the TL sensitivity of LiNaSO₄:Eu. This objective was not satisfied and the codopants (Ce, Sm, Ho and Er) decrease the TL sensitivity and slightly shift the dosimetric peak to lower temperatures. Samples doped with Mg, K, Bi and Tl were used with the hope that they may alter the trapping centers stability and introduce new peaks in the temperature range 430–500 K to observe any TL discontinuity or wavelength shift in their spectra as observed in CL measurements. This objective was fulfilled with Tl and Bi, where there is a discontinuity and/or wavelength shift at about 460 K. Such intensity and/or wavelength variations are ascribed to microstructural phase changes within the LiNaSO₄ crystals that may result from twin boundaries behaving like Na₂SO₄.