铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识.铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究;实验上也没有清晰地观测到自旋极化量子阱态的隧穿.文章介绍了最近由卢仲毅、张晓光和Pantelides［1］预言的Fe/MgO/FeO/Fe/Cr和其他铁磁量子阱隧道结中的共振隧穿,并解释铁、钴、铬的Δ1能带的对称性在这种共振隧穿中的作用.     

Resonant tunneling through a double-barrier quantum well in a transverse magnetic field

We theoretically analyze the tunneling of electrons through a heterostructure with two barriers and a quantum well between them in a magnetic field perpendicular to the current. We take into account the contribution from electrons with various positions of the magnetic oscillator center to the current. The region of the Z-shaped current-voltage characteristic for the heterostructure is shown to narrow as the magnetic field strengthens. Our analysis reveals a critical magnetic field strength at which the Z-shaped current-voltage characteristic transforms into an N-shaped one. We compare our results with experimental data.     

Impurity bound states in a compensated quantum well

A detailed study of the bound-state properties of an impurity in a compensated semiconductor quantum well is presented using the screened potential of a minority impurity ion in a compensated semiconductor due to Schechter (1981). Accurate eigenenergies for the first 15 states are obtained for this potential as a function of the screening parameter λ by numerical integration of the two-dimensional (2D) Schrödinger equation. The energies are found to decrease with increasing values of the screening parameter λ in all cases. The variation of splitting between adjacent levels for the same value of n with the screening parameter is also studied.     

Resonant transport and quantum bound states in Z-shaped graphene nanoribbons

We study the transport properties of a Z-shaped graphene nanoribbon (GNR). It is found that the quasibound states in the Z-shaped junction induce resonant peaks around the Dirac point in the conductance profile. The resonant transmission via the quantum bound state is very sensitive to the size of the junction. The number and also the lifetimes of the quasibound states increase with the size of the Z-shaped junction. Long lifetime bound states which do not induce obvious resonant peaks exist in the junction with a wider or longer zigzag edged GNR. The resonant characteristics of the Z-shaped GNR can be tuned by the variation of the geometrical size.     

Resonant transmission of an electromagnetic pulse through a quantum well

The reflectance, transmittance, and absorbance of a symmetric electromagnetic pulse with a carrier frequency close to the frequency of direct interband transitions in a quantum well are calculated. The energy levels in the quantum well are assumed to be discrete, and two closely spaced excited levels are taken into account. The theory holds true for quantum wells of an arbitrary width at which the quantum confinement is retained. The calculations are performed with due regard for the difference between the refractive indices of the quantum well and the barriers. In this case, there appears an additional reflection from the quantum-well boundaries. The additional reflection results in a substantial change in the shape of the reflected pulse as compared to that characteristic of a homogeneous medium. The reflection from the quantum-well boundaries disappears at specific ratios between the carrier frequency of the exciting pulse and the quantum-well width.     

光子晶体双量子阱的共振隧穿

采用R矩阵法研究了二维光子晶体双量子阱的共振隧穿特性.研究发现:光子晶体双量子阱的共振频率可以通过调节双阱的耦合强度来控制;对称双量子阱中,共振峰发生双劈裂;不对称双量子阱,共振劈裂消失.但是,由改变左手介质和右手介质在双阱中的排列顺序产生的阱介质不对称阱的共振劈裂消失与阱宽不对称的双阱产生的共振劈裂消失不一样.进一步对一维光子晶体量子阱分析后发现,前者是由光在左右手介质中传播的能流方向相反产生干涉相消而引起;后者是由阱宽不同,阱的本征模不一样而引起. 关键词： 光子晶体 双量子阱 R矩阵')" href="#">R矩阵 左手介质     

The donor bound exciton states in wurtzite GaN quantum dot

Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height.     

对称双势垒量子阱中自旋极化输运的时间特性

电子的隧穿时间是描述量子器件动态工作范围的重要指标. 本文考虑k³ Dresselhaus 自旋轨道耦合效应对系统哈密顿量的修正, 结合转移矩阵方法和龙格-库塔法来解含时薛定谔方程, 进而讨论了电子在非磁半导体对称双势垒结构中的透射系数及隧穿寿命等问题. 研究结果发现:由于k³ Dresselhaus 自旋轨道耦合效应使自旋简并消除, 并在时间域内得到了表达, 导致自旋向上和自旋向下电子的透射峰发生了自旋劈裂; 不同自旋取向的电子构建时间和隧穿寿命不同, 这是导致自旋极化的原因之一; 电子的自旋极化在时间上趋于稳定. 关键词： 自旋极化输运 透射系数 隧穿寿命 自旋极化率     

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current–voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs.     

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.     

Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells

This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.     

Photon emission during intraband tunneling through quantum well structures

Radiative transitions associated with intraband electron tunneling through DC biased quantum well structures are analyzed theoretically. Spontaneous emission and stimulated emission of photons within the quantum well structure are calculated and estimates are made of the radiative transition rate in comparison with the damping loss. The absence of an inherent long wavelength emission cutoff is in contrast with interband transition devices and suggests applications of intraband transition devices as far infrared or microwave sources.