石墨烯纳米带量子点中的量子混沌现象

在20 mK的极低温下测量了石墨烯纳米带量子点的电子输运性质,观测到清晰的库仑阻塞菱形块和对应量子点激发态的电导峰.对库仑阻塞近邻电导峰间距和峰值进行了统计分析,发现其统计分布分别满足无规矩阵理论描述的Wigner-Dyson分布和Porter-Thomas分布,说明石墨烯纳米带量子点在低温下出现了量子混沌现象.还讨论了这种长方形量子点中量子混沌的可能成因. 关键词： 石墨烯纳米带 量子点 库仑阻塞 量子混沌     

Blockade of tunneling in a suspended single-electron transistor

The tunneling of electrons that is limited by the Coulomb blockade effect in a single-electron transistor with a quantum dot based on a narrow GaAs/AlGaAs quantum wire suspended over a substrate is investigated. By means of a direct comparison experiment, the tunneling features associated with the separation of the quantum dot from the substrate are revealed. In addition to an increase in the charge energy (Coulomb gap), which reaches 170 K in temperature units, the dependence of this energy on the number of electrons in the quantum dot, which varies from zero to four, is observed. This dependence is explained by a change in the effective size of the dot due to the effect of the depleting gate voltage. Moreover, the additional blockade of tunneling that is different from the Coulomb blockade and is specific for suspended structures is observed. It is shown that this blockade is not associated with the dynamical effect of exciting local phonon modes and can be attributed to the change in the static elastic strains in the quantum wire that accompany the tunneling of an electron to/from the quantum dot.     

Single-electron tunneling in silicon nanostructures

We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films. Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application as well as the study of electron–phonon interaction. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Electronic Green's functions in a T-shaped multi-quantum dot system

We developed a set of equations to calculate the electronic Green's functions in a T-shaped multi-quantum dot system using the equation of motion method. We model the system using a generalized Anderson Hamiltonian which accounts for finite intradot on-site Coulomb interaction in all component dots as well as for the interdot electron tunneling between adjacent quantum dots. Our results are obtained within and beyond the Hartree–Fock approximation and provide a path to evaluate all the electronic correlations in the multi-quantum dot system in the Coulomb blockade regime. Both approximations provide information on the physical effects related to the finite intradot on-site Coulomb interaction. As a particular example for our generalized results, we considered the simplest T-shaped system consisting of two dots and proved that our approximation introduces important corrections in the detector and side dots Green's functions, and implicitly in the evaluation of the system's transport properties. The multi-quantum dot T-shaped setup may be of interest for the practical realization of qubit states in quantum dot systems.     

Coupling a quantum dot, fermionic leads, and a microwave cavity on a chip

We demonstrate a hybrid architecture consisting of a quantum dot circuit coupled to a single mode of the electromagnetic field. We use single wall carbon nanotube based circuits inserted in superconducting microwave cavities. By probing the nanotube dot using a dispersive readout in the Coulomb blockade and the Kondo regime, we determine an electron-photon coupling strength which should enable circuit QED experiments with more complex quantum dot circuits.     

Detection of single-electron charging in an individual InAs quantum dot by noncontact atomic-force microscopy

Single-electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic-force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage, and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single-electron tunneling between the dot and the back electrode governed by the Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the "force version" of the Coulomb blockade effect.     

Dynamic localization and the Coulomb blockade in quantum dots under ac pumping

We study conductance through a quantum dot under Coulomb blockade conditions in the presence of an external periodic perturbation. The stationary state is determined by the balance between the heating of the dot electrons by the perturbation and cooling by electron exchange with the cold contacts. We show that the Coulomb blockade peak can have a peculiar shape if heating is affected by dynamic localization, which can be an experimental signature of this effect.     

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.     

Two-electron states in a double quantum dot in a constant electric field

The wave functions of stationary states and the spectrum of two-electron system are analytically determined in a symmetric double quantum dot. It is shown that in the ground state when the external electric field is absent, electrons cannot reside in the same quantum dot due to the Coulomb blockade. This situation changes in an external electric field. At a critical field strength, the probability of finding both electrons in the same quantum dot jumpwise increases from zero to unity.     

Phase coherent transmission through interacting mesoscopic systems

This is a review of the phase coherent transmission through interacting mesoscopic conductors. As a paradigm we study the transmission amplitude and the dephasing rate for electron transport through a quantum dot in the Coulomb blockade regime. We summarize experimental and theoretical work devoted to the phase of the transmission amplitude. It is shown that the evolution of the transmission phase may be dominated by non-universal features in the short-time dynamics of the quantum dot. The controlled dephasing in Coulomb-coupled conductors is investigated. Examples comprise a single or multiple quantum dots in close vicinity to a quantum point contact. The current through the quantum point contact “measures” the state of the dots and causes dephasing. The dephasing rate is derived using widely different theoretical approaches. The Coulomb coupling between mesoscopic conductors may prove useful for future work on electron coherence and quantum computing.     

Electrically tunable spin polarization in a carbon nanotube spin diode

We have studied the current through a carbon-nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available nondegenerate energy level on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin dependent, and that it stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. The degree of resulting spin polarization is fully and precisely tunable using the gate and bias voltages.     

Shot noise in a quantum dot coupled to non-magnetic leads: effects of Coulomb interaction

We study electron transport through a quantum dot, connected to non-magnetic leads, in a magnetic field. A super-Poissonian electron noise due to the effects of both interacting localized states and dynamic channel blockade is found when the Coulomb blockade is partially lifted. This is sharp contrast to the sub-Poissonian shot noise found in the previous studies for a large bias voltage, where the Coulomb blockade is completely lifted. Moreover, we show that the super-Poissonian shot noise can be suppressed by applying an electron spin resonance (ESR) driving field. For a sufficiently strong ESR driving field strength, the super-Poissonian shot noise will change to be sub-Poissonian.     

Coulomb blockade in molecular quantum dots

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences) and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport characteristics is determined by the combined effect of the electronic structure of molecular quantum dots and by the Coulomb blockade. In particular, the following phenomena are discussed in detail: the suppression of the current at higher voltages, the charging-induced rectification effect, the charging-generated changes of conductance gap and the temperature-induced as well as broadening-generated smoothing of current steps.     

Quantum dot in the pseudogap Kondo state

We investigate the transport properties of a (small) quantum dot connected to Fermi liquid leads with a power-law density of states (DOS). Such a system, if experimentally realizable, will have interesting physical properties including: (i) non-saturating Coulomb blockade peak widths; (ii) a non-unitary Kondo peak symmetrically placed between Coulomb blockade peaks; (iii) an absence of conductance away from particle-hole symmetry at sufficiently low temperatures; and (iv) evidence of a quantum critical point as a function of dot-lead hopping. These properties are compared and contrasted with one dimensional Luttinger systems exhibiting a power-law “tunneling-DOS”.     

Charge oscillations in a double quantum dot in the Coulomb blockade regime

The two-electron dynamics in a symmetric double quantum dot placed in a onstant electric field is considered. It is shown that, despite the Coulomb blockade, interdot electron-density oscillations are possible. In these oscillations, a charge equal to the charge of a single electron is periodically transferred from one quantum dot to the other.     

Resonance breakdown of a Coulomb blockade due to the mechanical vibrations of a quantum dot

The effect of forced mechanical vibrations of a suspended single-electron transistor on Coulomb-blockade limited electron tunneling through a quantum dot has been studied. The mechanical vibrations of the quantum dot have been shown to result in the Coulomb blockade breakdown, which is manifested by narrow resonance peaks of the transistor conductance as a function of the excitation frequency at the frequencies corresponding to the eigenmodes of the mechanical vibrations. The mechanism of the observed effect presumably associated with the oscillations of the mutual electrical capacitances between the quantum dot and the surrounding electrodes is discussed.     

电子关联效应对平行双量子点系统磁输运性质的影响

从理论上研究了平行双量子点系统中的电子关联效应对该系统磁输运性质的影响. 基于广义主方程方法, 计算了通过此系统的电流、微分电导和隧穿磁阻. 计算结果表明: 电子自旋关联效应可以促发一个很大的隧穿磁阻, 而电子库仑关联效应不仅可以压制电子自旋关联效应, 还可以导致负隧穿磁阻和负微分电导的出现. 对相关的基本物理问题进行了讨论.     

Nonequilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.     

Electronic transport in graphene nanostructures on SiO2

We report two experiments on graphene nanostructures. The first was performed on a graphene nanoribbon, where the nature of electronic transport was investigated in detail. Electrons or holes are found to localize in pockets of the potential along the ribbon. Transport is governed by the joint action of localization and Coulomb interaction. The temperature-dependence of the conductance shows activated behavior at temperatures above a few Kelvin. The activation energy retraces the edges of Coulomb blockade diamonds found in nonlinear transport. In the second experiment the metallic tip of a low-temperature scanning force microscope was scanned above a graphene quantum dot. In addition to the familiar Coulomb blockade fringes, localized states are detected forming in the constrictions connecting the dot to source and drain.     

Spin filters with Fano dots

We compute the zero bias conductance of electrons through a single ballistic channel weakly coupled to a side quantum dot with Coulomb interaction. In contrast to the standard setup which is designed to measure the transport through the dot, the channel conductance reveals Coulomb blockade dips rather then peaks due to the Fano-like backscattering. At zero temperature the Kondo effect leads to the formation of broad valleys of small conductance corresponding to an odd number of electrons on the dot. By applying a magnetic field in the dot region we find two dips corresponding to a total suppression in the conductance of spins up and down separated by an energy of the order of the Coulomb interaction. This provides a possibility of a perfect spin filter.Received: 6 November 2003, Published online: 2 April 2004PACS: 72.15.Qm Scattering mechanisms and Kondo effect - 73.23.Ad Ballistic transport - 72.25.-b Spin polarized transport