Superconductivity in the doped topological insulator Cu{x}Bi{2}Se{3} under high pressure

We report a high-pressure single crystal study of the topological superconductor Cu{x}Bi{2}Se{3}. Resistivity measurements under pressure show superconductivity is depressed smoothly. At the same time the metallic behavior is gradually lost. The upper-critical field data B{c2}(T) under pressure collapse onto a universal curve. The absence of Pauli limiting and the comparison of B{c2}(T) to a polar-state function point to spin-triplet superconductivity, but an anisotropic spin-singlet state cannot be discarded completely.     

Vicinal Growth as a Possible Structural Source of the Nematic Superconductivity in Sr x Bi 2 Se 3

The structure of the layered SrxBi2Se3 crystals characterized by the nematic superconductivity has been studied. It is shown that the higher the degree of the superconducting and structural nematicity, the stronger the deviation of the block boundary orientation from the crystal c axis. This indicates that the block grows at an angle to the basal planes, rather than along them. This growth can result in the formation of the preferred direction in a system.     

Common origin of the circular-dichroism pattern in angle-resolved photoemission spectroscopy of SrTiO3 and Cu(x)Bi2Se3

Circular dichroism in the angular distribution of photoelectrons from SrTiO(3):Nb and Cu(x)Bi(2)Se(3) is investigated by 7-eV laser angle-resolved photoemission spectroscopy. In addition to the well-known node that occurs in the circular dichroism pattern when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is two-dimensional. The flower-shaped circular dichroism patterns in the angular distribution occurring around the Fermi level of SrTiO(3):Nb and around the Dirac point of Cu(x)Bi(2)Se(3) are explained on equal footings. We point out that the penetration depth of the topological states of Cu(x)Bi(2)Se(3) depends on momentum.     

Superconductivity with two-fold symmetry in topological superconductor Srx Bi2Se3

Topological superconductivity is the quantum condensate of paired electrons with an odd parity of the pairing function. By using a Corbino-shape like electrode configuration, we measure the c-axis resistivity of the recently discovered superconductor SrxBi_2Se_3 with the magnetic field rotating within the basal planes, and find clear evidence of two-fold superconductivity. The Laue diffraction measurements on these samples show that the maximum gap direction is either parallel or perpendicular to the main crystallographic axis. This observation is consistent with the theoretical prediction and strongly suggests that SrxBi_2Se_3 is a topological superconductor.     

Superconductivity and magnetic ordering in YBa2(Cu1−x Fe x )3O7

Transverse-and zero-field μSR measurements have been made for YBa₂(Cu_1−x Fe _x )₃O₇ withx=0.04, 0.08 and 0.12. The temperature range studied was from approximately 7.5 K to 100 K. The onset of magnetic ordering commences at about 7.5 K forx=0.04, 10 K forx=0.08 and 20 K forx=0.12. The Gaussian depolarization parameter, σ ofG _x (t) = exp(−σ² t ²/2), is depressed by a factor of about 0.6 forx=0.04, but for thex=0.08 sample σ is depressed by a factor of 10 and increasing suppression is seen as the temperature is lowered below 45 K. This decrease in σ is interpreted in terms of decreasing electronic mean free paths.     

Majorana fermions and exotic surface Andreev bound states in topological superconductors: application to Cu(x)Bi2Se3

The recently discovered superconductor Cu(x)Bi2Se3 is a candidate for three-dimensional time-reversal-invariant topological superconductors, which are predicted to have robust surface Andreev bound states hosting massless Majorana fermions. In this work, we analytically and numerically find the linearly dispersing Majorana fermions at k=0, which smoothly evolve into a new branch of gapless surface Andreev bound states near the Fermi momentum. The latter is a new type of Andreev bound states resulting from both the nontrivial band structure and the odd-parity pairing symmetry. The tunneling spectra of these surface Andreev bound states agree well with a recent point-contact spectroscopy experiment [S. Sasaki et al., Phys. Rev. Lett. 107, 217001 (2011)] and yield additional predictions for low temperature tunneling and photoemission experiments.     

硼掺杂拓扑绝缘体Bi2Se3单晶的电输运性质研究

本文首次报道了用自助溶剂法(self-flux)制备优良的硼(B)掺杂硒化铋(Bi2BxSe3-x)样品的探索。实验结果显示掺杂样品中大部分B是以替代Se位方式存在,少量B以插入Bi2Se3晶格或范德瓦尔斯间隙的形式存在。当B的含量逐渐增加时,Bi2Se3的晶格常数c先减小后增加,且样品具有清晰的层状结构。掺杂量x=0.05的样品局部区域出现纳米带结构,同时该样品在低温下出现了明显的金属-绝缘转变现象。Bi2Se3样品电阻率随掺杂含量的增加而增加,表明B掺杂提高了样品表面态对整体电导的贡献,同时纳米带结构也有助于增加表面态的贡献。     

Superconductivity in the BaPb1−x Bi x O3 system

Superconductivity properties of the BaPb_1−x Bi _x O₃ system have been investigated by precise measurements of electrical resistivity and Hall coefficient in specimens prepared by the hot press technique. Sharp superconducting transitions have been observed in those specimens, indicating the homogeneities of the specimens thus prepared. superconductivity has been observed for 0.05<x≦0.35 and a maximum critical temperature of 11.7 K has been observed atx=0.25. The carrier concentration deduced from the Hall coefficient has been found to show nearly the samex dependence as does the critical temperature. The upper critical field has been determined from the magnetic field dependence of the lowcurrent-density resistivity. Discussions are given about the superconductivity in the BaPb_1−x Bi _x O₃ system on the basis of the experiment results.     

Magnetic Properties of Iron-Doped Bi2Se3, a Topological Insulator

Physics of the Solid State - We study the dc magnetization of a Bi1.94Fe0.06Se3 single crystal in the temperature range of 1.9&nbsp;to 400 K in applied magnetic fields up to 70 kOe for two...     

Electrical and Thermal Transport Properties of n-type Bi6Cu2Se4O6 (2BiCuSeO + 2Bi2O2Se)

New thermoelectric materials, n-type Bi₆Cu₂Se₄O₆ oxyselenides, composed of well-known BiCuSeO and Bi₂O₂Se oxyselenides, are synthesized with a simple solid-state reaction. Electrical transport properties, microstructures, and elastic properties are investigated with an emphasis on thermal transport properties. Similar to Bi₂O₂Se, it is found that the halogen-doped Bi₆Cu₂Se₄O₆ possesses n-type conducting transports, which can be improved via Br/Cl doping. Compared with BiCuSeO and Bi₂O₂Se, an extremely low thermal conductivity can be observed in Bi₆Cu₂Se₄O₆. To reveal the origin of low thermal conductivity, elastic properties, sound velocity, Grüneisen parameter, and Debye temperature are evaluated. Importantly, the calculated phonon mean free path of Bi₆Cu₂Se₄O₆ is comparable to the interlayer distance for BiO─CuSe and BiO─Se layers, which is ascribed to the strong interlayer phonon scattering. Contributing from the outstanding low thermal conductivity and improved electrical transport properties, the maximum ZT ≈0.15 at 823 K and ≈0.11 at 873K are realized in n-type Bi₆Cu₂Se_3.2Br_0.8O₆ and Bi₆Cu₂Se_3.6Cl_0.4O₆, respectively, indicating the promising thermoelectric performance in n-type Bi₆Cu₂Se₄O₆ oxyselenides.     

Superconductivity in Bi2.2Ca2.8−x Sr x Cu2O y system and effect of rare earth substitution

The oxide system Bi_2.2Ca_2.8−x Sr _x Cu₂O _y has been investigated for superconductivity as a function of Ca/Sr ratio withx=0.7, 1.0, 1.4 and 1.8. All these compositions are found to be superconducting with onset temperature in the range of 80–90 K implying a large homogeneity range between Sr and Ca for the superconductivity to occur in this system. Effect of partial replacement of Bi by rare earths has been studied and it is observed that 20% replacement of Bi by Nd and Eu does not significantly affect the superconducting transition temperature.     

Superconductivity at Tc = 44 K in LixFe2Se2(NH3)y

We report a new approach to measuring the dielectric behavior of thin films by means of differential interdigitated electrode (IDE) cells coupled with a dual-channel impedance measurement setup. The differential IDE cell consists of two identical IDE??s on a common substrate. With one IDE loaded with sample and the other one empty, the complex permittivities of both capacitors are measured simultaneously by means of a dual-channel impedance measurement setup. The net dielectric response of the material under study is then obtained by the difference of the two permittivities, which corrects for the substrate contribution. The applicability of this approach is examined with bulk glycerol and a 600 nm indomethacin film and is evidenced by the results being consistent with those measured by conventional methods. The main advantages of this new approach include a simplified preparation technique for thin film samples and a straightforward correction for the substrate contribution by subtracting the empty IDE signal obtained at the same temperature and thermal history.     

Superconductivity and possible overdoping in Lu1−x Ca x Ba2Cu3O7−δ

Structural and superconducting properties of the system Lu_1−x Ca _x Ba₂ Cu₃O_7−δ, both in bulk as well as thin film form, have been investigated. Presence of large Ca-ions at the Lu-sites is responsible for phase stability (in 1–2–3 phase) in bulk. In argon annealed tetragonal samples (δ:1) superconductivity is reinstated as in these samples, presence of Ca-ions lead to the generation of holes in the Cu−O planes. In oxygen annealed bulk samples and thin films, there is a large depression ofT _c due to divalent Ca-ions present in concentrationx<0.2. Our data indicate that this depression ofT _c is likely due to overdoping effect.     

Superconductivity and possible overdoping in Lu1−x Ca x Ba2Cu3O7−δ

Structural and superconducting properties of the system Lu_1?x Ca _x Ba₂ Cu₃O_7?δ, both in bulk as well as thin film form, have been investigated. Presence of large Ca-ions at the Lu-sites is responsible for phase stability (in 1–2–3 phase) in bulk. In argon annealed tetragonal samples (δ:1) superconductivity is reinstated as in these samples, presence of Ca-ions lead to the generation of holes in the Cu?O planes. In oxygen annealed bulk samples and thin films, there is a large depression ofT _c due to divalent Ca-ions present in concentrationx<0.2. Our data indicate that this depression ofT _c is likely due to overdoping effect.     

Nonlinear dielectric properties of amorphous Bi1.8Pb0.3Sr2Ca2Cu3−x KxOz (x = 0.2–0.3)

The dielectric constant of amorphous Bi_1.8Pb_0.3Sr₂Ca₂Cu_3?x K_xO_x (x = 0.2–0.3) is measured as a function of the static electric field strength. It is found that, as the field strength increases, the dielectric constant decreases following a quadratic law. This behavior of the dielectric constant in a static electric field indicates nonlinear dielectric properties, which can be described within the thermodynamic theory of ferroelectricity.     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Thermoelectric properties in Mn-doped Bi2Se3

Using n-type and p-type Mn-doped Bi₂Se₃ single crystals, a thin-film-type thermoelectric (TE) module was fabricated and the TE characteristics were investigated. The Seebeck coefficient at room temperature was about 100 μV K⁻¹ with different sign for both materials. From the Seebeck coefficient and resistivity values, the electric power of our TE module was evaluated to be 90 μW for a single couple at the temperature difference of 10 K. This value is compared to that (∼21 μW) of commercialized TE device. Nevertheless, the actual power was measured to be quite small around 0.74 μW, which is much higher than other homemade TE power level. This small power is attributed to the high electrical contact resistance between the TE material and the heat source and sink. Assuming the contact resistance level ∼0.1 Ω similar to that of commercialized TE devices, the electric power should be about 41 μW, which is almost 2 times higher than that in commercialized TE devices. These results propose that the Mn-doped Bi₂Se₃ system is another promising TE material, which can be replaced with the commercialized Bi₂Te₃ system.