Intersubband population inversion and induced transitions between the Landau levels in resonance-tunneling multiple quantum-well structures

A new mechanism of creating the population inversion in the system of Landau levels in resonance-tunneling multiple quantum-well structures has been proposed. It has been shown that when the distance between the lower subbands is smaller than the energy of an optical phonon (i.e., when the scattering by optical phonons is suppressed), the population of the ground (zeroth) Landau level of the upper subband can be substantially higher than the population of the first Landau level of the lowest subband, which opens the opportunity of obtaining the tunable-frequency generation of induced terahertz electromagnetic radiation at such a transition.     

Carrier kinetics and population inversion in Landau level system in cascade GaAs/AlGaAs quantum well structures

The carrier distribution over Landau levels was studied in resonant tunneling GaAs/AlGaAs quantum well structures under tunneling pumping of the upper subband. The numerical calculations of the Landau levels population for various values of pumping intensity (tunneling time), magnetic field and the structure doping were carried out. The effect of various scattering mechanisms, as two-electron (electron–electron scattering) as single-electron (acoustic phonon and interface roughness scattering) ones on level population was studied. The population inversion between the zeroth Landau level of the upper subband and the first Landau level of the lowest subband was shown to exist in wide range of the magnetic field strength thus providing the possibility of wide range tunable stimulated terahertz emission.     

Role of electron spin in integer quantum hall photoluminescence

We investigate numerically the photoluminescence (PL) spectrum in the integer quantum Hall regime and find that the electron spins play important roles. The spectra for the left circularly polarized light show peak splittings when the Fermi levels lies in the excited Landau level, which is caused by the inter Landau level scattering between electrons with anti-parallel spins. At around ν_e∼1 the PL energy is strongly affected by the interplay between the screening and multiple spin flipping (skyrmion) effects.     

Carrier dynamics and stimulated radiative terahertz transitions between Landau levels in cascade GaAs/AlGaAs quantum well structures

The carrier distribution over Landau levels was studied in resonant tunneling GaAs/AlGaAs quantum well structures under tunneling pumping of the upper subband. The numerical calculations of the Landau level populations for various values of pumping intensity (tunneling time), magnetic field and structure doping were carried out. The population inversion between zeroth Landau level of the upper subband and the first Landau level of the lowest subband was shown to exist in wide range of the magnetic field strength. The effect of various scattering mechanisms, both two-particle (electron-electron scattering) and single-particle (acoustic phonon and interface roughness scattering) ones, on level population was studied. The way of lifting the selection rule forbidding the inter-Landau level terahertz transitions of interest and achieving considerable values of the dipole matrix element is proposed.     

Strong effect of resonant impurities on Landau-level quantization

We investigate experimentally the effect of a random distribution of nitrogen (N) impurities on the Landau-level spectrum of a GaAs quantum well. Our magnetotunneling study reveals complex and nonequally spaced Landau levels and a quenching of the Landau states at a well-defined bias and electron energy which is resonant with that of the N atoms. Analysis of the magnetic field dependence of the tunnel current into the Landau levels of the well also provides quantitative information about the nonresonant component of the N-related scattering potential.     

Landau levels in a simple hexagonal bilayer graphene

A new approach, which makes the Hamiltonian of the Peierls tight-binding model change into a band matrix, is used to investigate the Landau levels in a AA-stacked bilayer graphene. The interlayer atomic hoppings could induce an energy gap, the asymmetry of the Landau levels about the chemical potential, the random variation in the level spacing, more fourfold degenerate Landau levels at low energy, and the oscillatory Landau levels and the complicated state degeneracies at moderate energy. For the low-energy Landau levels, their dependence on the quantum number and the field strength cannot be well characterized by a simple power law. They exhibit a anomalous oscillation during the variation of the magnetic field. The main features of the magnetoelectronic states are directly reflected in density of states.     

Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure

We study the Landau level broadening by analyzing the Shubnikov-de Haas oscillations in a gated AlGaAs/GaAs parabolic quantum well structure when only one electronic subband is occupied. Small-angle scattering is determined to be important in this system. The Shubnikov-de Haas oscillations are described equally well by employing Gaussian or Lorentzian broadening of the Landau levels at low magnetic field where the quantum localization effect is not important. A possible explanation is that the electron-electron interactions lead to the overlapping of adjacent Landau levels and one can not distinguish between the two broadening types.     

Direct measurement of the Fermi energy in graphene using a double-layer heterostructure

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system by employing a double-layer heterostructure. We illustrate this method by using a graphene double layer to probe the Fermi energy as a function of carrier density in monolayer graphene, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.     

The longitudinal magnetophonon effect in semiconductors containing magnetic impurities

The dependence of longitudinal magnetoresistance on magnetic field in semiconductors containing magnetic impurities is investigated theoretically. The calculation takes into account the scattering of electrons on magnetic impurities and on optical phonons. The inelastic optical phonon scattering itself is responsible for magnetophonon oscillations of the magnetoresistance, the extremes of these oscillations occuring when energy distance between Landau levels is equal to the energy of optical phonon, $\text{h}\text{?}$ω₀. The scattering on magnetic impurities may lead to spin flip electronic transitions. The spin flip electronic transitions manifest themselves as additional minima on the oscillatory picture of magnetoresistance. These new minima occur when the energy separation between spin-split Landau levels is equal to $\text{h}\text{?}$ω₀.     

Higher-order modified Born approximation for potential scattering in the presence of a strong magnetic field

Summary The total cross-section for potential scattering in the presence of a strong magnetic field presents singularities and exhibits giant growth (cyclotron resonances) at values of the incident particle energy exactly matching the differences between the initial-and final-state Landau levels. In this paper (in cylindrical coordinates) a higher-order modified Born series has been derived that can be summed at all orders giving a nondivergent total cross-section at the Landau thresholds.     

Magnetotunneling relaxation of electrons in double quantum wells

Electron tunneling relaxation in double quantum wells subject to a transverse magnetic field is studied. The resonant peaks in the tunneling relaxation rate appear when the energy splitting Δ of the tunnel-coupled pair of the left- and right- well electron states is a multiple of the cyclotron energy ℏω_c and two series of the Landau levels coincide. The shape of such resonant oscillations of the relaxation rate is determined by the Landau levels' broadening (which is associated with the intrawell scattering in the case of small tunnel coupling), but it is not expressed through the electron density of states directly. The dependence of the tunneling relaxation rate on ℏω_c and Δ is calculated taking into account elastic scattering of the electrons by the inhomogeneities of the structure in the limit when the scattering potential is slowly changing on the magnetic length scale.     

Energy relaxation mechanism in Landau level system of quantum wells

Kinetics of intrasubband energy relaxation of electrons in the system of Landau levels lying below the optical phonon energy is studied. Extraordinary behavior of the relaxation of electronic subsystem excitation energy is detected. Despite the fact that its main channel is optical phonon emission, the total relaxation time exceeds the characteristic times of scattering on optical phonons by several orders of magnitude.     

Impurity states of electrons in quantum dots in external magnetic fields

The influence of isolated impurity atoms on the electron energy spectrum in a parabolic quantum dot in quantizing magnetic field is studied. The impurity potential is approximated by a Gaussian separable operator which allows one to obtain the exact solution of the problem. We demonstrate that in the electron energy spectrum there is a set of local levels which are split from the Landau zone boundaries in the upward or downward direction depending on the impurity type. We have calculated the local level positions, the wave functions of electrons in bound states, and the residues of the electron scattering amplitudes by impurity atoms at the poles.     

Magnetic neutron-electron scattering; use of thef-sum rule to assess the effect of electron correlations,lattice interaction and magnetic field

We have calculated thef-sum rule for magnetic neutron scattering off electrons. Correlations alter the cross-section significantly at intermediate scattering vectors. Field induced effects are most significant at small scattering vectors, and the sum rule diverges in the limit of zero scattering vector. This feature is attributed to the field induced coupling of neutrons to the lowest energy Landau level and the collective density oscillation (hybrid mode). Our interpretation is based on an RPA calculation of the response function for neutron scattering from a magnetized plasma. The contribution to the cross-section from the electron-phonon interaction is also assessed, and it is found to increase with decreasing scattering vector.     

Point impurities remove degeneracy of the Landau levels in a two-dimensional electron gas

The density of states of a two-dimensional electron gas in a magnetic field has been studied taking into account the scattering on point impurities. It is demonstrated that allowance for the electron-impurity interaction completely removes degeneracy of the Landau levels even for a small volume density of these point defects. The density of states is calculated in a self-consistent approximation taking into account all diagrams without intersections of the impurity lines. The electron density of states ρ is determined by the contribution from a cut of the one-particle Green’s function rather than from a pole. In a wide range of the electron energies ω (measured from each Landau level), the value of ρ(ω) is inversely proportional to the energy |ω| and proportional to the impurity concentration. The obtained results are applicable to various two-dimensional electron systems such as inversion layers, heterostructures, and electrons on the surface of liquid helium.     

Intersubband collective excitations in a quasi-two-dimensional electron system in external magnetic field

The spectrum of collective excitations in a quasi-two-dimensional electron system was studied by the method of Raman scattering spectroscopy. In an applied magnetic field, such systems exhibit collective excitations related to the electron transitions between dimensionally quantized subbands with a change in the Landau level index (intersubband Bernstein modes). It is shown that these modes interact with the fundamental intersubband excitations of the charge and spin densities, the interaction energy being determined by the excitation quasimomentum. Interaction of the intersubband Bernstein modes and the fundamental intersubband excitations with quasi-two-dimensional LO phonons was studied. Behavior of the new branches of collective excitations in a quasi-two-dimensional electron system possessing more than one occupied Landau level was studied and the nature of these branches was determined.     

外场调控下硼磷烯量子点的电子结构和光学性质研究

采用紧束缚近似方法对锯齿状六边形硼磷烯量子点在平面电场和垂直磁场调控下的电子结构和光学性质进行了研究. 研究表明,硼磷烯量子点作为直接带隙半导体,在无外加电场和磁场作用时,能隙不随尺寸的改变而变化. 在平面电场调控下,能隙随电场强度的增加逐渐减小直至消失,平面电场方向几乎不会对硼磷烯量子点体系产生影响, 且随量子点尺寸的增大,能隙消失所需电场强度逐渐减小. 在垂直磁场调控下,表现为体态的能级在磁场作用下形成朗道能级,而能隙边缘处的朗道能级近似为一个平带,不随磁通量的改变而变化,态密度主要分布于朗道能级处. 另外,垂直磁场作用下的光吸收主要是由朗道能级之间的跃迁引起的.     

2D electrons in lateral superlattice in a strong B⊥

A periodic 1D potential acting upon the surface electrons on vicinal planes smears up the Landau levels into energy bands. The density of states singularities result in a specific line shape in cyclotron absorption and inelastic light scattering. In both cases there are two maxima caused by the density of states increasing at the band edges.     

点缺陷扶手型石墨烯量子点的电子性质研究

基于有限差分方法, 数值求解了Dirac方程, 研究了垂直磁场下的点缺陷扶手型 石墨烯 量子点的能谱结构, 分析了尺寸大小对带隙的影响. 与无磁场时具有一定带隙 (带隙的大小与半径成反比) 的量子点相比, 在外加有限磁场下, 能谱中出现朗道能级, 最低朗道能级能量为零并与磁场强度无关, 并且朗道能级的简并度随着磁场的增加而增加. 进一步的计算表明, 最低朗道能级的简并度与磁场成线性关系, 与半径的平方成线性关系. 本文工作对基于石墨烯量子点的器件设计具有一定的指导意义.     

Manifestation of collective effects in polarization-resolved recombination spectra of the completely filled zeroth landau level of two-dimensional electrons

The luminescence spectra due to recombination of two-dimensional electrons with optically excited holes have been studied in a wide range of electron filling factors in the transverse magnetic field. A nonmonotonic filling-factor dependence of the energy splitting between different circular polarizations of photoluminescence from the completely filled zeroth Landau level of electrons has been observed. It has been shown that this dependence is associated with collective (excitonic) effects that appear due to the interaction between electrons from partially occupied upper Landau levels and holes remaining on the zeroth Landau level after recombination.