Pb(Mg1/3Nb2/3)O3-0.33PbTiO3晶体三方相的压电性能研究

以坐标系二次旋转为理论基础研究了PMN-0.33PT晶体三方相的常用压电模量d15、d24、d31、d33、d36和机电耦合系数k15、k24、k31、k33、k36在三维空间的变化规律.通过MATLAB编程求得以上各系数关于坐标系旋转角度的函数表达式,绘制出了它们的三维空间分布图,并一一求得这些系数的最大值,以及与最大值相对应的旋转角.发现除d33和k33外,d31、d36、k31和k36也在空间变化显著.d31和k31旋转后的最大值比原坐标系下的数值分别扩大了15倍和6倍,对应的旋转角分别为(-4.5°/90°)、(22.5°/270°).d36 和k36在原坐标系下不存在,经旋转后的最大值可分别达到1340 pC/N 和0.73.该研究结果对PMN-0.33PT晶体在压电传感器、换能器中的应用具有重要的理论价值.     

铌酸锂与钽酸锂晶体压电性能随空间变化的研究

本文利用坐标变换的方法,探讨了LiNbO3与LiTaO3晶体压电系数d33,d31和机电耦合系数k33,k31随空间方向变化的规律,分别得到这2种晶体的d33,d31,k33和k31的最大值及其方向.对于LiNbO3而言,maxd33＝39.6pC/N,maxk33＝0.60,在镜面yoz内分别右偏z轴61.0°和57.0°,数值分别是原来约6.4倍和3.7倍.对于LiTaO3而言,maxd33＝14.6pC/N,maxk33＝0.35,在镜面yoz内分别右偏z轴56.5°和54.0°,数值分别是原来的1.8倍和2.1倍.     

3m点群晶体纵向压电性能的研究

本文详细地介绍了通过坐标变换研究晶体压电性能随空间变化的方法.在以前的工作基础上,对LiNbO3、LiTaO3和PZT60/40等3m点群晶体纵向压电系数d33及机电耦合系数k33在空间分布的共同规律进行了归纳总结,发现它们在空间中的分布具有明显的各向异性,并存在着一些特殊方向,沿这些方向,晶体的压电性能有较大幅度的提高.在此基础上,本文还根据不同文献中报道,对另一著名的3m点群晶体β-BaB2O4的压电系数数据进行了比较和分析.     

La3Ga5SiO14晶体压电系数的温度特性

测量了(yxf)-30°切La3Ga5SiO14(LGS)晶体30～300℃温度范围内的谐振特性.室温时压电常数d11和d14分别为5.59×10-12C/N和-5.01×10-12C/N.在室温至300℃范围内(yxl)-30°切La3Ga5SiO14晶片厚度切变振动的谐振频率和机电耦合系数k′26都随温度升高而升高,因此压电常数d11和d14也随温度升高而略有升高.     

不同温度下Ga3PO7晶体的声表面波特性研究

针对Ga3PO7晶体的压电特性,利用克里斯托夫方程计算了0～120℃范围内7个不同温度点的Ga3PO7的X、Y、Z切型传播角度为0°～ 180°的声表面波速度、机电耦合系数、能流角.结果表明,Z切型的Ga3PO7晶体受温度的影响较大,X和Y切型的温度稳定性相对Z切型较好,且这两种切型的SAW传播速度都与石英晶体相当.X切型中最佳传播角度情况下的机电耦合系数为0.532;,是石英晶体的2倍,而Y切型中最佳情况下的机电耦合系数可以达到1.041;,是石英晶体的4倍多.     

CTAS和CNAS晶体的声表面波特性研究

本文计算了Ca3TaAl3Si2O14(CTAS)和Ca3NbAl3SiO14(CNAS)压电晶体的X,Y和Z切型的声表面波速度、机电耦合系数.计算结果表明:CTAS和CNAS机电耦合系数最高可达1.04;,是石英晶体(最大0.3;)三倍多,而CTAS晶体的声表面波速度(最小值约为3070 m/s)比石英(最小值为3200 m/s)小4.0;.给出声表面波特性比较好的切型,为CTAS和CNAS的声表面波应用提供了理论依据.     

离子束作用下KDP晶体表面粗糙度研究

为了避免传统加工过程对KDP( Potassium dihydrogen phosphate)晶体表面产生损伤、嵌入杂质等降低晶体抗激光损伤阈值的不利因素,文章探索采用离子束抛光技术实现KDP晶体的加工.本文主要分析了离子束抛光作用下KDP晶体表面粗糙度的演变过程,采用垂直入射和倾斜45°入射两种方式研究KDP晶体表面粗糙度,利用倾斜45°入射的加工方式提高了KDP晶体的表面质量,其表面均方根粗糙度值由初始的3.07 nm减小到了1.95 nm,实验结果验证了离子束抛光加工KDP晶体的可行性.     

GaPO4晶体弹性与压电性能的研究

本文首先绘制了GaPO4晶体在（100）,（010）,（001）三个主晶面内慢度分布曲线,计算了声速的最大值,并与水晶进行了比较,发现GaPO4晶体的声速普遍小于水晶的声速;其次还探讨了GaPo4晶体压电系数d11及机电耦合系数k11随空间方向变化的规律,得到了GaPO4晶体d11,k11的最大值及其方向,并分别和水晶进行了比较,发现GaPO4晶体的d11和k11都远大于水晶的。这些结果将对GaPO4晶体在压电器件和声光器件的设计,开发及利用等方面具有一定的理论指导作用。     

基于纳米划痕实验和有限元仿真的KDP晶体断裂性能研究

通过变深度纳米划痕实验对KDP的断裂特性进行了研究,测量了在KDP晶体(001)晶面上沿不同方向进行划痕实验时首条裂纹出现的位置.随后建立了该划痕过程的有限元模型,计算得到了导致KDP晶体沿不同方向发生断裂时的拉应力,并解释了划痕实验中出现微裂纹和崩坑的原因.结果表明,在KDP晶体(001)晶面上沿0°方向加工时材料最容易发生断裂,对应的拉应力为107 MPa;而沿45°方向时材料表现出较好的可加工性能,此时导致KDP晶体发生断裂的拉应力为160 MPa.     

CaTiO3掺杂PbNb2O6高居里温度压电陶瓷的研究

采用传统电子陶瓷的制备方法,系统研究了(1-x)PbNb2O6-xCaTiO3(x=0、0.01、0.02、0.03、0.04)系高居里温度压电陶瓷.XRD分析表明,x=0时,材料只能形成三方非铁电相钨青铜结构,而x在0.01～0.04 mol范围内均能形成钨青铜型固溶体,利用XRD数据计算了晶体的晶格常数随x的变化,发现随着CaTiO3含量增加,晶胞体积减小.陶瓷材料的居里温度测试结果表明该体系具有高的居里温度(Tc＞400℃).测试了不同组成陶瓷的压电、介电性能,CaTiO3的掺杂量为x=0.03时陶瓷样品的压电常数达到d33=64pC/N,平面机电耦合系数kp=0.269,材料的介电常数ε33T/ε0=293,介质损耗tanδ=0.021,居里温度Tc=570℃,该组成具有优异的压电性能,适合于高温环境下的使用.     

Study on K(DxH1‐x)2PO4 Crystals: Growth Habit,Optical Properties and their Improvement by Thermal‐Conditioning

Phosphite, which often exists in growth solutions obtained directly from commercial P₂O₅ , was found to have significant inhibiting effects on the growth of pyramidal face of KDP crystals. K(D_xH_1‐x)₂PO₄ (referred to as DKDP) crystals with different deuterium fraction x were grown and the optical performances were investigated. The absorption coefficients at 1.05 μm decreases monotonically with the increase of x. The transmission threshold shift from 1.65μm at x=0 to 2.10 μm at x=0.96. The high temperature phase transition temperature and latent heat were measured using the method of differential scanning calorimetry (DSC). Thermal conditioning experiments were carried out at 180°C and 140°C for KDP and DKDP, respectively. After conditioning, a different degree of improvement was observed in the optical homogeneity of the samples, while the laser damage threshold and light absorption coefficient showed no significant change.     

Effects of anions on rapid growth and growth habit of KDP crystals

The synthesis of KDP from its raw material has been found exist in the growth solution. In the crystal growth experiment, significant extension of specific faces was observed at low dopant concentration. At high doping concentration, the growth rate of the whole crystal decreased with no significant habit modification. The inhibiting effects of phosphite and other H-bonding anionic ions on the growth of pyramidal faces are discussed. Rapid growth rate experiments have been carried out with purified material and an averaged growth rate of 18.6mm/day was obtained.     

Generalized Mittag-Leffler relaxation of NH4H2PO4: Porous glass composite

In this paper the dielectric spectroscopy data of ammonium dihydrogen phosphate NH₄H₂PO₄: porous glass composite was studied at various temperatures. It was found that the investigated material exhibits the two-power-law relaxation pattern with the low- (m) and high-frequency (n-1) exponents satisfying the relation m < 1 − n, where 0 < m, n < 1. Such a relaxation behavior belongs to the class of less typical ones and cannot be fitted by any of the well-know empirical relaxation functions. In order to explain the relation between the power-law exponents of the studied sample we utilize a new relaxation function, recently derived (Stanislavsky et al. (2010) [1]) in the framework of the relaxation diffusion scenario.     

An Investigation on the Lattice Distortion in Urea and KCl Doped KDP Single Crystals by X‐ray Diffraction Studies

Potassium dihydrogen phosphate (KDP) doped with different mole concentrations of Urea and KCl were grown using low temperature solution growth technique. X‐ray diffraction studies were carried out on the grown crystals using a Shimadzu X‐ray diffractometer with CuKD radiation. X‐ray study revealed that the structures of the doped crystals are slightly distorted compared to the pure KDP crystal. This may be attributed to strains on the lattice by the adsorption of urea and KCl.     

Structural and mechanical properties of KН2PО4 single crystals with embedded nanoparticles and organic molecules

Single crystals of KDP crystals with embedded Urea molecules and TiO₂ nanoparticles have been grown from aqueous solution by the temperature lowering method. The effect of the organic molecules and nanoparticles on the structural and mechanical properties has been studied. It has been observed that addition of Urea molecules improves laser induced damage threshold and mechanical strength of the crystal, while TiO₂ nanoparticles have the opposite effect. The structure and composition of KDP:Urea crystal are studied by three‐crystal X‐ray diffraction analysis, which reveals the existence of a correlation between the increase of the microhardness value and the change of the crystal lattice parameter. The surface features of KDP:TiO₂ crystals are analyzed by scanning electron microscopy that reveals the presence of quasi‐equidistant growth bands caused by capture of the nanoparticles. It is shown that the rise of TiO₂ nanoparticles concentration up to 10⁻⁴ wt.% and higher resulted in 3‐fold reduction of the laser damage threshold of KDP:TiO₂ relative to pure KDP in [001] and [100] crystallographic directions. It is found that microhardness and fracture toughness decrease at the nanoparticles concentration of 10⁻³ wt.% due to crack formation at crystal lattice discontinuities. The grown crystals also have been subjected to dielectric studies.     

In situ measurement of growth kinetics of {100} KDP crystal faces in the presence of polyphosphate impurities

The face growth rate and critical supersaturation of {100} face were in situ measured using the laser‐polarization‐interference technique in the presence of potassium pyrophosphate, trimetric sodium phosphate and sodium hexametaphosphate impurities. The polyphosphate impurities inhibit the growth rate of prismatic faces. The face growth rate as a function of supersaturation at different impurity concentrations, as well as critical supersaturation as a function of impurity concentrations, was found in good agreement with a two‐dimensional nucleation model in the pure system and Kubota and Mullin's model in the presence of impurities. The average distance L between active sites available for impurity adsorption as well as the edge free energy was calculated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Antisolvent crystallization of aqueous ammonium dihydrogen phosphate solutions by addition of acetone at different rates

Results of an investigation of in situ measurements of laser‐beam intensity I_s and I_m transmitted through aqueous ammonium dihydrogen phosphate (ADP) solutions saturated at 30 °C and water, respectively, and temperature T_s of solution and T_m of water during feeding of antisolvent acetone at different rates R_A, using an indigenously designed experimental setup, are presented and discussed. It was found that: (1) for the measurement of MSZW, defined as the maximum volume fraction of acetone content Δx_max in the solution, obtained from temperature measurements are more reliable than transmitted laser‐beam intensity measurements for solutions, (2) two minima ΔT_min1 and ΔT_min2 associated with endothermic reactions, separated by a maximum ΔT_max due to exothermic reactions appear in the plots of temperature difference ΔT = T_s−T_m against acetone feeding time t, and (3) in the ΔT(t) plots there are time intervals Δt of constant rates R_T of increase in ΔT of aqueous ADP solutions, and these values of R_T increase linearly with acetone feeding time rate R_A. The experimental data on the observed dependence of MSZW on antisolvent feeding rate R_A, the appearance of minima ΔT_min1 and ΔT_min2 and maximum ΔT_max and their dependence on R_A, and the relationship between R_T and R_A are discussed from consideration of processes of nucleation and growth of crystallites.     

磷酸盐低温烧结高强度SiC泡沫陶瓷及性能研究

通过有机模板复制法,以磷酸二氢铝为粘结剂,950 ℃烧成制备了高强度SiC泡沫陶瓷.研究了浆料中SiC含量和磷酸二氢铝含量对SiC泡沫陶瓷微观结构与性能的影响.结果表明:SiC微粉由A型Al(PO3)3粘结起来,烧成泡沫陶瓷通孔结构良好,开气孔率介于75;~91;之间.随着磷酸二氢铝含量的增加,烧成泡沫陶瓷的线收缩率、体积密度和抗折强度均逐渐增加,而开气孔率则逐渐减小;随着SiC含量的增加,烧成泡沫陶瓷的线收缩率和开气孔率均逐渐减小,而体积密度和抗折强度则逐渐增加.磷酸二氢铝含量为40;、SiC含量为60;时,泡沫陶瓷的抗折强度达(2.22±0.26) MPa.     

On the origin of supersaturation barriers during the growth of single crystals from aqueous solutions containing impurities – a review

A generalised treatment of the appearance of supersaturation barriers σ_d, σ* and σ** during the growth of single crystals is outlined from the standpoint of well‐defined critical values of relative step velocities on a face. The final theoretical expressions are based on the premise that: (1) there are critical values of the relative step velocities associated with different average distances between adsorbed impurity particles during instantaneous, time‐dependent and time‐independent adsorption of the impurity on the growing surface, (2) the growth rate of a face is proporptional to velocity of steps on the growing face, and (3) Freundlich and Langmuir adsorption isotherms apply for different impurities. The theoretical expressions are then used to critically analyse the experimental data on supersaturation barriers observed during the growth of ammonium oxalate monohydrate and potassium dihydrogen phosphate single crystals from aqueous solutions containing different impurities. It was found that: (1) Langmuir adsorption isotherm is more practical for the analysis of the experimental data of the dependence of supersaturation barriers σ_d, σ* and σ** on the concentration c_i of an impurity, and (2) the ratios σ_d/σ* and σ*/σ** of successive supersaturation barriers for an impurity either increases or remains constant with an increase in impurity concentration c_i, and may be explained in terms of the mechanism of adsorption of impurity particles. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural, thermal and dielectric studies on a new solution grown 4-dimethylaminopyridinium dihydrogen phosphate crystal

Single crystals of 4-dimethylaminopyridinium dihydrogen phosphate (DMAPDP) (C₇H₁₃N₂PO₄) were grown by the solvent evaporation method. The three-dimensional structure was solved by the single-crystal X-ray diffraction method which belongs to triclinic crystal system and the molecular arrangements in the crystal were studied. The thermal behaviour was investigated using differential scanning calorimetry (DSC) and no phase transition was identified in the temperature region −150 to 230 °C. The thermal parameters—thermal diffusivity (), thermal effusivity (e), thermal conductivity (K) and heat capacity (C_p) of DMAPDP were measured by an improved photopyroelectric technique at room temperature. Dielectric constant and dielectric loss of the grown crystal were evaluated for the frequency range 1–200 KHz in the temperature region 28–135 °C. The Vicker's hardness was measured as 42.2 for a load of 98.07 mN. The laser induced surface damage threshold of DMAPDP crystal was found to be 4.8 GW/cm² with nanosecond Nd:YAG laser.