Synthesis and physical behaviour of In2S3 films

In₂S₃ layers have been grown by close-spaced evaporation of pre-synthesized In₂S₃ powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200–350 °C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 °C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 °C. The films exhibited pure tetragonal β-In₂S₃ phase at the substrate temperature of 350 °C. The surface morphological analysis revealed that the films grown at 300 °C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 × 10³ Ω cm. The optical band gap was found to be direct and the layers grown at 300 °C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV.     

Scattering of N2 from Ni(111)

A cold (T_rot<10 K) beam of N₂ with an initial translational energy of 0.40 eV strikes an Ni(111) surface at surface temperatures from 300 to 873 K at several incident angles from 15 to 60°. The rotational energy and angular distributions of the scattered molecules are probed using (2+1) resonance-enhanced multiphoton ionization. Molecules scattered in the specular direction have mean rotational energies that are independent of surface temperature, whereas those scattered at angles far from the specular show a dependence on surface temperature, caused likely by multiple collisions with the surface before escape. A rotational rainbow, seen in systems such as CO–Ni(111) and N₂–Ag(111), is not seen in this system. For molecules that scatter close to the specular direction, approximately 10% of the initial translational energy is converted into rotational energy of the scattered N₂. For surface temperatures above room temperature, the angular distributions indicate that molecules that scatter into low-J states also tend to exit in a broad peak (10–20° FWHM) near the specular, and this peak is broadened with increasing incident angle. The molecules that scatter into high-J states have a much broader distribution, indicating that they are trapped rotationally during the initial collision and suffer multiple collisions before leaving the surface.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

Temperature dependence of the electrical resistivity of amorphous Co80−xErxB20 alloys

The temperature dependence of the electrical resistivity of amorphous Co_80−xEr_xB₂₀ alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T_min. In addition, the resistivity shows quadratic temperature behavior in the interval T_min<T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity shows a change in structural short range occurring in the composition range 8–9 at%.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Thermodynamic properties of the clathrate-type silver-oxide Ag6O8AgHF2

We report normal-state and superconducting properties of the clathrate-type silver-oxide Ag₆O₈AgHF₂. We present electrical resistivity, DC- and AC-susceptibility and specific-heat measurements of single crystalline Ag₆O₈AgHF₂. In the normal state, Ag₆O₈AgHF₂ exhibits metallic conductivity and a phase transition near 110 K, possibly a structural phase transition as observed in the related compound Ag₆O₈AgNO₃. The onset of superconductivity of our samples is observed around 1.2–1.5 K, and the H–T phase diagram is determined for the first time. The upper critical field H_c2(0) is estimated to be about 2000–2200 Oe and the coherence length ξ_GL(0) to be 40 nm.     

Mechanisms of metastable N2 and Kr electron stimulated desorption from N2---Kr double layer and mixed films

Desorption of metastable particles from layered and mixed films, composed of N₂ and Kr, is induced by the impact of 6–50 eV monoenergetic electrons. From yield functions and time-of-flight analysis of the metastable particles emanating from these films, N*₂ and Kr* are identified as the desorbing species. Basic mechanisms responsible for their desorption are discussed. It is suggested that the desorption of Kr* arises from dissociation of transitory [Kr·N₂]* excimers. The desorption of N*₂ can arise from cavity expulsion, intramolecular vibrational energy transfer (with or without prior electronic excitation energy transfer from Kr excitions to N₂) and the dissociation of [Kr·N₂]* excimers.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Out-of-plane conductivity in Bi2Sr2CuOy crystals

We present extensive measurements of anisotropic resistivity on Bi₂Sr₂CuO_y crystals grown from melts with different Bi/Sr ratios and doped with Pb. We find that the temperature variation of the c-axis resistivity _c(T) is correlated with the in-plane resistivity _ab. Depending on the starting compositions, the normal-state in-plane resistivity _ab can either show localized conduction at low temperature or be metallic (d_ab/dT < 0) in the whole temperature range. Correspondingly, a change of the T dependence of _c from nonmetallic (d_c/dT < 0) in the whole measured temperature range (4.2–300 K) to a mixed (d_c/dT < 0 at low T but d_c/dT> 0 at high T) conduction is observed. In accompany, the magnitude of _c at low T decreases by about two orders. We have quantified the trend of the _c(T) and examined some current proposals concerning the out-of-plane transport.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics

The polycrystalline sample of LiFe_1/2Ni_1/2VO₄ was prepared by a standard solid-state reaction technique and confirmed by X-ray diffractometry. LiFe_1/2Ni_1/2VO₄ has orthorhombic crystal structure whose dielectric and electric modulus properties were studied over a wide frequency range (100 Hz–1 MHz) at different temperatures (296–623 K) using a complex impedance spectroscopy (CIS) technique. The frequency and temperature dependence of dielectric constant (ε_r) and tangent loss (tan δ) of LiFe_1/2Ni_1/2VO₄ are studied. The variation of ε_r as a function frequency at different temperatures exhibits a dispersive behavior at low frequencies. The variation of the ε_r as a function of temperature at different frequencies shows the dielectric anomaly in ε_r at 498 K with maximum value of dielectric constant 274.49 and 96.86 at 100 kHz and 1 MHz, respectively. Modulus analysis was carried out to understand the mechanism of the electrical transport process, which indicates the non-exponential type of conductivity relaxation in the material. The activation energy calculated from electric modulus spectra is 0.38 eV.     

Structural and electrical characterisation of La0.5Ca0.5MnO3 thin films grown by pulsed laser deposition

Thin films of perovskite manganite, with nominal composition La_0.5Ca_0.5MnO₃, have been prepared by pulsed laser deposition on (1 0 0) SrTiO₃, (1 0 0) LaAlO₃, (1 0 0) Si and YSZ/CeO₂-buffered (1 0 0) Si substrates. Structural and electrical characterisation was performed on the films. The magneto-transport properties of all the thin films depart from the bulk behaviour. The LCMO film grown on buffered Si shows an insulator–metallic transition around 130–150 K while the one deposited directly on Si displayed a similar behaviour under a melting field of 1 T. However, that transition is absent in the films grown on LAO and STO. We suggest that appropriate stress values induced by the substrate favour the formation of metallic percolative paths.     

Integrated band intensities in N2O4 in the infrared range

We have measured the integrated band intensities of the ν₉ and ν₁₁ bands of N₂O₄ which are observed around 1757 and 1261 cm^-1, respectively. By varying temperature and pressure, we have obtained: S_band(ν₉) = 9.60(130), 9.10(24), 8.80(66) and S_band(ν₁₁)= 5.93(64), 5.70(21) and 5.33(46) (in 10^-17 cm/molecule) at 293.15 (60), 277.25 (60) and 261.65 (60) K, respectively.     

Evidences of dense Kondo behaviour in the U-Au system: Electrical and magnetic investigations in U14Au51 and UAu2

U₁₄Au₅₁ and UAu₂ were recently demonstrated the two correct phases stable at room temperature in the U-Au system. Magnetic susceptibility (1.5–300 K) and electrical resistivity (10–800 K) measurements were performed in samples of both phases. Magnetic susceptibility temperature behaviour gives evidences of an antiferromagnetic transition at 23 K in U₁₄Au₅₁, whereas no magnetic order is detected in UAu₂. In both compounds, Kondo-like logarithmic behaviour in electrical resistivity temperature trend is found. Effects already observed in U₂Zn₁₇ and UAl₂ are respectively found in U₁₄Au₅₁ and UAu₂. Possible “heavy fermion” properties of these compounds are discussed.     

Synthesis of YBa2Cu3O7−x superconducting thin films on LaAlO3 by means of PAMOCVD

High-T_c superconducting thin films have been deposited in situ by means of a plasma assisted metal-organic chemical vapour deposition (PAMOCVD) process on LaAlO₃. An EMCORE high-speed rotating disc reactor was used to deposit the films at a substrate temperature of 600°C to 800°C. The system is equipped with a (remote) 120 W microwave plasma generator. The oxidising plasma gas is N₂O and/or O₂ while Ar was used as the inert carrier gas for the different metal-organics. The influence of different process parameters (such as the temperatures of the metal-organics, substrate temperature, and plasma gas composition) on the superconductive properties and on the morphology of the films was investigated. Surface morphology and composition were studied by SEM/EDX or EPMA, and AC susceptibility measurements were used to investigate the superconductive properties (T_c and J_c). X-ray diffraction measurements indicated that single-phase YBa₂Cu₃O_7−x films were epitaxially grown with the 00l orientation perpendicular to the substrate surface. The critical temperature (T_c) of the films is about 90 K and the critical current density (J_c) is higher than 10⁶ A/cm² at 77 K and zero field.     

Solid-phase epitaxy of CaSi2 on Si(1 1 1) and the Schottky-barrier height of CaSi2/Si(1 1 1)

Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi₂ films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi₂ on Si(1 1 1) amounts to qΦ_Bn=0.25 eV on n-type and to qΦ_Bp=0.82 eV on p-type silicon.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

Temperature dependence of thermal and electrical conductivity of Bi-based high-Tc (2 2 2 3) superconductor

Superconducting samples with nominal composition Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_δ were prepared by the conventional solid-state reaction technique. The samples have been characterized by X-ray diffraction, dc electrical resistivity, ac magnetic susceptibility and thermal conductivity. The X-ray diffraction studies were done at room temperature and the lattice constants of the material were determined by indexing all the peaks. All the above measurements show that, there exists two phases i.e. high-T_c (2 2 2 3) and low-T_c (2 2 1 2). The information obtained from dc electrical resistivity data agrees with ac magnetic susceptibility measurements. The onset temperature T_c (onset) and zero resistivity temperature T_c (R = 0) of the samples remains within the temperature 120 ± 1 K and 103 ± 1 K. Thermal conductivity has been measured with a transient plane source (TPS) technique in the temperature range 77–300 K. The estimation of the electrical resistivity change due to scattering by phonons and impurities has been discussed. An increase in thermal conductivity is observed above and below T_c (R = 0). The electron–phonon scattering time, phonon-limited mobility and the size of the electron–phonon constant are also calculated. Wiedemann–Franz law is applied to gain prediction about the magnitude of electronic and phonon contribution to the total thermal conductivity of the samples. It is observed that heat is mainly conducted by the phonons in this system.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.