镁基合金自由枝晶生长的相场模拟研究

利用定量相场模型, 以Mg-0.5 wt.%Al合金为例模拟了基面((0001)面)内镁基合金的等温自由枝晶生长过程. 通过研究该合金体系数值模拟的收敛性, 获得了最优化值耦合参数λ = 5.5及网格宽度Δx/W₀ = 0.4, 并在该参数下系统研究了各向异性强度和过饱和度对枝晶尖端生长速度、尖端曲率半径、Péclet数及稳定性常数σ^* 的影响. 结果表明, 由微观可解性理论得到的稳定性系数σ^* 与ε₆ 拟合值σ^*≅ ε₆ ^1.81905, 更接近理想值σ ^* (ε₆) ≅ε₆ ^1.75. 此外, 当过饱和度Ω < 0.6时, 稳定性系数σ ^* 不随ε₆ 的变化而变化, 而当Ω > 0.6时, 稳定性系数σ ^* 随着ε₆ 的增加而减小. 这反映了枝晶的生长由扩散控制向动力学控制的转变. 随着过饱和度的增加, 枝晶形貌由雪花状枝晶向圆状枝晶转变.     

Quantum speed limit for the maximum coherent state under the squeezed environment

The quantum speed limit time for quantum system under squeezed environment is studied. We consider two typical models, the damped Jaynes–Cummings model and the dephasing model. For the damped Jaynes–Cummings model under squeezed environment, we find that the quantum speed limit time becomes larger with the squeezed parameter r increasing and indicates symmetry about the phase parameter value θ = π. Meanwhile, the quantum speed limit time can also be influenced by the coupling strength between the system and environment. However, the quantum speed limit time for the dephasing model is determined by the dephasing rate and the boundary of acceleration region that interacting with vacuum reservoir can be broken when the squeezed environment parameters are appropriately chosen.     

若干高精度恒稳的半显式差分格式

本文构造了解色散方程u₁=au_xxx的若干三层恒稳的半显式差分格式。第Ⅰ、Ⅱ类格式的局部截断误差的阶为O(τ²+h²+(τ²)/(h³));而第Ⅲ、Ⅳ类格式的局部截断误差的阶为O(τ²+h⁴+((τ)/(h))²+τh)。用判别稳定性的Von Neumann准则可证明:第Ⅰ、Ⅱ类格式及当参数α≤1时的第Ⅲ、Ⅳ类格式都是无条件稳定的,并且当必须的边界条件给定时它们可以显式地进行计算。     

Steered coherence and entanglement in the Heisenberg XX chain under twisted boundary conditions

We study steered coherence(SC) and entanglement in a three-spin Heisenberg XX model under twisted boundary conditions and show that their strengths can be significantly enhanced by tuning the twist angle. The optimal twist angle θ_(opt) for achieving the maximum l_1 norm of SC is π in the region of weak field B and decreases gradually from π to 0 when B increases after a critical value, while for the relative entropy of SC, θ_(opt) equals π in the weak field region and 0 otherwise.The entanglement and the critical temperature above which the entanglement vanishes can also be significantly enhanced by tuning the twist angle from 0 to π.     

电网在三种边攻击方式下的级联失效

研究美国西部电网在三种边攻击方式下级联失效差异性.定义边ij的初始负载为(k_ik_j)^θ,k_i,k_j分别表示节点i和j的度,θ为一可调参数.三种边攻击方式分别为:最小负载边攻击方式(LL)、最大负载边攻击方式(HL)和容量比最小边攻击方式(SPC).通过分析电网的拓扑结构,研究三种攻击方式级联失效差异性.研究表明:HL和LL攻击方式下,受攻击边的范围不随θ而改变,HL的攻击效果随θ的增大而增强,LL的攻击效果随θ的增大而减弱.而SPC法选中的被攻击边随θ变化,当θ取值较小时,SPC攻击边是拓扑结构较特殊的一种最小负载边,随着θ的增大,SPC攻击边趋向于高负载边,因此θ较小时,SPC的攻击效果和LL接近,当θ较大时,SPC的攻击效果和HL接近.     

Dynamics of spinor Bose–Einstein condensate subject to dissipation

We investigate the internal dynamics of the spinor Bose–Einstein condensates subject to dissipation by solving the Lindblad master equation. It is shown that for the condensates without dissipation its dynamics always evolve along a specific orbital in the phase space of(n_0, θ) and display three kinds of dynamical properties including Josephson-like oscillation, self-trapping-like oscillation, and ‘running phase'. In contrast, the condensates subject to dissipation will not evolve along the specific dynamical orbital. If component-1 and component-(-1) dissipate at different rates, the magnetization m will not conserve and the system transits between different dynamical regions. The dynamical properties can be exhibited in the phase space of(n_0, θ, m).     

一端附壁高分子链的Monte Carlo研究

采用简立方格点上的Monte Carlo模拟,研究一端被无限大不可穿透平面壁吸附的高分子链的均方末端距<R²>,以及高分子链的质量中心到平面吸附壁的平均距离<Z>,与链长N、参数u(u=e^-ε/kT,ε是链骨架原子间的相互作用能量,k是玻耳兹曼常数,T是热力学温度)的关系。结果表明:<R²>和<Z>都服从标度律,<R²>=αN^γ,<Z>=βN^η,其中,γ、η、α、β都是u的函数;u从1减小到0.5,则γ从1.01增大到1.19,η从0.51增大到0.60.     

在线社交网络中群体互动行为的时间特征

针对在线社交网络中群体互动行为,运用有偏扩散理论,构建有偏扩散模型,从任务的间隔时间τ与执行时间θ的关系视角,系统地阐述了群体互动活动中群体发帖行为与事件行为的时间间隔分布特征.针对群体用户发帖时τ≥θ的特征,论证群体用户发帖时间间隔的幂律分布机理.针对事件时τ>>θ的特征,论证了事件时间间隔具有指数效应的幂律分布机理,实验结果与理论推导吻合.     

O-乙基O-芳基N-异丙基硫代磷酰胺酯类化合物的除草活性与其31P化学位移的关系

本文测定了标题所示一类化合物的³¹P的化学位移,并讨论了它与取代基电子性间存在如下的关系δP=-0.9193σ+3.5891F+66.5385提出了³¹P化学位移与此类化合物的除草活性间存在一定的相关性,其关系如下PI₅₀=-0.9025π²+0.9017π-0.5600E_s-0.1620△δP+0.8445I+4.2514并对此关系的适用性及存在偏差作了初步讨论。     

基于太极形介质柱六角光子晶体禁带特性研究

提出了一种新型的非对称性散射体的二维六角晶格光子晶体结构–-太极形介质柱光子晶体. 利用平面波展开法从理论研究这种光子晶体结构的能带特性以及结构参数对完全禁带的影响. 研究表明:散射体对称性的打破, TE模和TM模能带宽度和数目都会有所增加, 有益于获得更宽的完全禁带以及更多条完全禁带.通过参数优化, 发现在ε = 17, R=0.38 μm, r=0.36R, θ = 0° 时, 获得最大完全带隙宽度0.0541(ωa/2πc); 在ε = 16, R=0.44, r=0.2R, θ = 0°时, 光子晶体完全带隙数目最多达到8条. 关键词： 光子晶体 禁带 平面波展开     

载能Ni原子斜入射Pt(111)表面的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,利用分子动力学模拟,详细研究不同角度入射的载能Ni原子在Pt(111)基体表面的沉积过程.结果表明,随着入射角度θ从0°增加到80°,溅射产额、表面吸附原子产额、空位产额的变化情况均可按入射角度近似地分为θ≤20°,20° < θ < 60°和θ≥60°三个区域.当θ≤20°时,载能沉积对基体表面的影响与垂直入射时的情况类似,表面吸附原子的分布较为集中,入射原子容易达到基体表面第二层及以下,对基体内部晶格产生-定的影响;在20° < θ < 60°的范围内,入射原子的注入深度有所下降,对基体内部晶格的影响减小,表面吸附原子的分布较为均匀,有利于薄膜的均匀成核与层状生长;当θ≥60°时,所有入射原子均直接被基体表面反射,表面吸附原子产额、溅射产额、表面空位产额均接近0,载能沉积作用没有体现.     

相位角对容性耦合电非对称放电特性的影响

电非对称效应作为一种新兴技术,被广泛用于对离子能量和离子通量的独立调控.此外,在改善等离子体的径向均匀性方面,电非对称效应也发挥了重要作用.本文采用二维流体力学模型,并耦合麦克斯韦方程组,系统地研究了容性耦合氢等离子体中当放电由多谐波叠加驱动时,不同谐波阶数k下的电非对称效应,重点观察了相位角θ_n对自偏压以及等离子体径向均匀性的影响.模拟结果表明：在同一谐波阶数下,自偏压随相位角θ_n的变化趋势不尽相同,且当k增大（k>3）时,自偏压随最高频相位角θ_k的变化范围逐渐减小.此外,通过调节相位角θ_n,可以改变轴向功率密度和径向功率密度的相对关系,进而实现对等离子体径向均匀性的调节.研究结果对于利用电非对称效应优化等离子体工艺过程具有一定的指导意义.     

Gravitational quasi-normal modes of static R~2 Anti-de Sitter black holes

In this paper, we study the gravitational quasi-normal modes(QNMs) for a static R~2 black hole(BH) in Anti-de Sitter(AdS) spacetime. The corresponding master equation of odd parity is derived and the QNMs are evaluated by the Horowitz and Hubeny method. Meanwhile the stability of such BH is also discussed through the temporal evolution of the perturbation field. Here we mainly consider the coefficient λ, which is related to the radius of AdS black hole, on the QNMs of the R~2 AdS BH. The results show that the Re(ω) and |Im(ω)| of the QNMs increase together as |λ| increases for a given angular momentum number l. That indicates with a larger value of |λ| the corresponding R~2 AdS BH returns to stable much more quickly. The dynamic evolution of the perturbation field is consistent with the results derived by the Horowitz and Hubeny method. Since in the conformal field theory the QNMs can reflect its approach to equilibrium, so our related results could be referential to studies of the AdS/CFT conjecture. The relationship between λ and the properties of the static R~2 BH might be helpful for the development of R~2 gravitational theory.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.     

Remarks on stochastic non-linear birth and death models

The first part of this paper is an attempt to formulate and motivate additional work on the important problem of obtaining global bounds applicable to the controlled truncation of the paper relates specifically to the linear birth, quadratic death model. Asymptotic results are given for the first finite difference ΔT_m where T_m is the exactly known mean time to extinction starting from state m (m= 0,1,…). These results are in terms of the environmental carrying capacity n^* taken to be large. For m near zero ΔT_me^n*/(n^*)²; whereas, for m near n^*ΔT_m ≈ (π/2)^1/2/(n^*)^3/2. This indicates the vastly different time scales in those two regions of state space - with considerably slower action near extinction than near n^*.     

基于纠缠态的量子通信网络的量子信道建立速率模型

针对基于纠缠态的量子通信网络, 提出了网络模型. 基于网络模型, 首先分析了基础链路的量子信道建立速率. 然后根据基础链路的量子信道建立速率, 针对不同的量子信道建立方法, 对中继长链路上的量子信道建立速率进行分析, 得到在逐点方法和分段方法下所对应的量子信道建立速率. 最后, 利用逾渗模型, 对大规模纠缠态量子通信网络中任意两点间的量子信道建立速率进行分析, 推导出n个节点量子通信网络中, 量子信道建立速率为Ω (1/n).     

Ge-Sb-Se硫系玻璃的折射率和热光系数

Ge-Sb-Se硫系玻璃被认为是极佳的红外传输材料和有潜力的非线性光学材料.在光学设计中,玻璃的线性折射率(n)及其热光系数(ζ)是关键技术参数.以预测和调控Ge-Sb-Se玻璃的n和ζ为目的,考察了玻璃的n,ζ,密度(d)和体积膨胀系数(β)与化学参数dSe和拓扑网络结构参数r的内在联系.研究发现,玻璃的n随d的增加而增大;ζ随β的增大而近似线性减小;β随dSe的减小或r的增大而减小;当Ge含量固定时, d随dSe的减小或r的增大而增大,当Sb含量固定时, d在dSe=0时具有最小值.基于实测d和n,拟合获得了Ge, Sb和Se元素在2—12μm波段的摩尔折射度(R_i),分别为R_(Ge)=10.16—10.50 cm~3/mol,RSb=16.71—17.08 cm~3/mol和RSe=11.15—11.21 cm~3/mol,根据d和R_i计算得到的n与实测值的偏差小于1%.基于实测ζ和β,拟合得到了Ge, Sb和Se元素在2—12μm波段的摩尔折射度温度系数(φ_i),分别为φ_(Ge)=21.1—22.6 ppm/K,φ_(Sb)=7.2—8.4 ppm/K和φ_(Se)=90.2—94.2 ppm/K,根据β和φ_i计算得到的ζ与实测值的偏差小于6 ppm/K.     

New holographic Weyl superconductors in Lifshitz gravity

We build holographic p-wave conductor(insulator)/superconductor models via the numerical method with a new form of Weyl coupling in five-dimensional Lifshitz gravity, and then investigate how the Weyl coupling parameter γ and the Lifshitz scaling parameter z affect the superconductor models.In the conductor/superconductor model, an increase in the Weyl correction(Lifshitz scaling)enhances(inhibits) the superconductor phase transition. Meanwhile, both the Weyl correction(when the Lifshitz parameter is large enough and fixed) and the Lifshitz scaling suppress the growth of the real part of the conductivity. The Weyl correction used here(CB~2) shows weaker effects on the critical value than the previous Weyl correction(CF~2). In the insulator/superconductor model, larger vaules of the Weyl parameter hinder the formation of condensate. However, in increase in the Lifshitz scaling enhances the appearance of condensate. In addition, the calculation suggests that a competitive relation may exist between the Weyl correction and the Lifshitz scaling.     

Does the quenched reduced U(∞) chiral model break spontaneously in weak coupling?

The U(N) chiral model, when quenched using Parisi's rule, has a [U(1) × U(1)]^N/U(1) global invariance. To determine whether this symmetry breaks spontaneously in weak coupling for N=∞, a one-loop calculation of the distribution of eigenvalues of the single U(N) matrix of the model is performed. This distribution is shown to be uniform on the unit circle and hence, no symmetry breaking occurs. Further, the order parameter | tr U|²/N², which should be zero at N=∞ in the absence of spontaneous symmetry breaking, is evaluated in the weak coupling phase for one, two and three dimensions for N varying from 2 to 50 by Monte Carlo simulation of the quenched model. The data indicate that this parameter indeed goes to zero as N→∞ implying that the symmetry does not break.     

糖的原子电距矢量表达及其核磁共振碳谱模拟

提出以原子电性距离矢量(VAED),描述上百种糖分子中数百个不同等价碳原子的化学环境;并结合γ效应校正,建立核磁共振碳谱(¹³C NMR)化学位移(CS)的五参数线性模型.用于糖分子中四类不同的等价碳原子化学位移的估计,复相关系数R和均方根误差RMS及标准偏差SD和F-统计量F分别为:伯碳n=62,R=0.991 0,RMS=1.960 2(SD=1.9762,F=5 0 2.32 94,EV=0.980 5);仲碳n=79,R=0.9886,RMS=2.5 40 5(SD=2.5 5 67,F=5 1 5.60 4 6,EV=0.975 7);叔碳n=30 2,R=0.95 1 4,RMS=3.6884(SD=3.694 5,F=4 68.82 76,EV=0.90 35)及季碳n=1 4,R=0.5 772,RMS=8.862 6(SD=9.1 972,F=0.5 82 8,EV=-0.0 837).经交互校验,伯仲叔碳的化学位移模型稳定性较好.并综合几种处理方法,找到一种较好的建模方法,将它用于几个外部样本的定量预测,结果良好.