Charge ordering modulations in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using the selected-area electron diffraction （SAED） technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy （HRTEM） images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi0.4Ca0.6MnO3/SrTiO3 interface from those in the region a little further from the Bi0.4Ca0.6MnO3/SrTiO3 interface, and the possible reasons for this are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

Bipolar resistance switching in the fully transparent BaSnO_3-based memory device

The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.     

A simulation study of the e+/e－ sensitivity of a low resistive phosphate glasselectrode in a RPC using GEANT MC

The resistivity of conventional glass is quite high and is unacceptable in a high rate environment. Low resistive glass-electrodes could be a solution for this problem. The present study reports the e^＋/e^- simulation results of an RPC detector made from low resistive phosphate glass electrodes. The detailed geometrical configuration of the content materials which are the essential components of the glass of the RPC detector have been created with the GEANT4 simulation code. Two different types of particle sources, i.e. for e^＋/e^- , have been located on the detectors surface to evaluate the performance of the phosphate glass RPC. Both of the particles have been simulated as a function of their respective energies in the range of 0.1 MeV 1.0 GeV. The present simulation work has shown that the resistive electrode plays an important role for the particle production in the RPC configuration.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

Effect of passive structure and toroidal rotation on resistive wall mode stability in the EAST tokamak

If βN exceeds no-wallβN, the plasma will be unstable because of external kink and resistive wall mode(RWM). In this article, the effect of the passive structure and the toroidal rotation on the RWM stability in the experimental advanced superconducting tokamak(EAST) are simulated with CHEASE and MARS codes. A model using a one-dimensional(1D)surface to present the effect of the passive plate is proved to be credible. The no wall βN limit is about 3li, and the ideal wall βN limit is about 4.5li on EAST. It is found that the rotation near the q = 2 surface and the plasma edge affects the RWM more.     

Study of neutron response for two hybrid RPC setups using the GEANT4 MC simulation approach

The present article describes a detailed neutron simulation study in the energy range 10^-10 MeV to 1.0 GeV for two different RPC configurations. The simulation studies were taken by using the GEANT4 MC code. Aluminum was utilized on the GND and readout strips for the （a） Bakelite-based and （b） glass-based RPCs. For the former type of RPC setup the neutron sensitivity for the isotropic source was Sn = 2.702 × 10^-2 at En = 1.0 GeV, while for the latter type of RPC, the neutron sensitivity for the same source was evaluated as Sn = 4.049 × 10^-2 at En = 1.0 GeV. These results were further compared with the previous RPC configuration in which copper was used for ground and pickup pads. Additionally A1 was employed at （GND＋strips） of the phosphate glass RPC setup and compared with the copper-based phosphate glass RPC. Good agreement with sensitivity values was obtained with the current and previous simulation results.     

Investigation on the shockwave induced by surface arc plasma in quiescent air

The shockwave induced by surface direct-current （DC） arc discharge is investigated both experimentally and numer- ically. In the experiment, the shockwave generated by rapid gas heating is clearly observed from Schlieren images. The peak velocity of the shockwave is measured to be over 410 m/s; during its upright movement, it gradually falls to about 340 m/s; no remarkable difference is seen after changing the discharge voltage and the pulse frequency. In the modeling of the arc plasma, the arc domain is not simulated as a boundary condition with fixed temperature or pressure, but a source term with a time-varying input power density, which could better reflect the influence of the heating process. It is found that with a reference power density of 2.8× 1012 W/m2, the calculated peak velocity is higher than the measured one, but they quickly （in 30 Its） become agreed with each other. The peak velocity also rises while increasing the power density, the maximum velocity acquired in the simulation is over 468 m/s, which is expected to be effective for high speed flow control.     

Modeling for V–O_2 reactive sputtering process using a pulsed power supply

In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The ‘steady-state’ balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.     

Proposal for muon and white neutron sources at CSNS

The China Spallation Neutron Source （CSNS） is a large scientific facility with the main purpose of serving multidisciplinary research on material characterization using neutron scattering techniques. The accelerator system is to provide a proton beam of 120 kW with a repetition rate of 25 Hz initially （CSNSⅠ）, progressively upgradeable to 240 kW （CSNS-Ⅱ） and 500 kW （CSNS-Ⅱ＇）. In addition to serving as a driving source for the spallation target, the proton beam can be exploited for serving additional functions both in fundamental and applied research. The expanded scientific application based on pulsed muons and fast neutrons is especially attractive in the overall consideration of CSNS upgrade options. A second target station that houses a muon-generating target and a fast-neutron-generating target in tandem, intercepting and removing a small part of the proton beam for the spallation target, is proposed. The muon and white neutron sources are operated principally in parasitic mode, leaving the main part of the beam directed to the spallation target. However, it is also possible to deliver the proton beam to the second target station in a dedicated mode for some special applications. Within the dual target configuration, the thin muon target placed upstream of the fast-neutron target will consume only about 5% of the beam traversed; the majority of the beam is used for fast-neutron production. A proton beam with a beam power of about 60 kW, an energy of 1.6 GeV and a repetition rate of 12.5 Hz will make the muon source and the white neutron source very attractive to multidisciplinary researchers.     

Nitriding molybdenum： Effects of duration and fill gas pressure when using lO0-Hz pulse DC discharge technique

Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） are used for the structural and morphological analysis of the nitrided layers. Vickers＇ microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar （1 bar = 105 Pa）. A considerable increase in surface microhardness （approximately by a factor of 2） is observed for longer duration （10 h） and 2-mbar pressure. Longer duration （10 h） and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.     

Pulsed sextupole injection for Beijing Advanced Photon Source with ultralow emittance

In this paper we present the physical design of the pulsed sextupole injection system for Beijing Advanced Photon Source （BAPS） with an ultralow emittance. The BAPS ring lattice is designed in such a way that two options of pulsed sextupole injection are allowed, i.e., with septum and pulsed sextupole in different drift spaces or in the same drift space. We give the magnetic parameters of the injection system and the optimal condition of the optical flmctions for both options. In addition, we find that the pulsed sextupole induces position-dependent dispersive effect and causes a non-ignorable effect on the injection efficiency in a storage ring with a relatively small acceptance, which should be well considered.     

High conversion efficiency,high power density Q-switched fiber laser

An acoustic-optic Q-switched all-fiber laser With a high-repetition-rate, a short pulse width, a wide spectrum, and a high conversion efficiency is experimentally demonstrated. In the laser configuration, a （1＋1）x 1 side-pumping coupler is introduced to perform backward pumping, and a 10/130%tm Yb fiber is adopted. The acoustic-optic component operates in the first direction, achieving a Q-switched pulse with a repetition rate adjustable in the range of 20 kHz-80 kHz. Under a repetition rate of 20 kHz and a pump power of 6.76 W, the fiber laser obtains a highly efficient and stable pulse output, with an average power of 4.3 W, a pulse width of 56 ns, a peak power of 3.83 kW, and a power density of 1.39x 101~ W/cm2. Particularly, the optic-optic conversion efficiency of the laser reaches as high as 64%. Another feature of the pulsed laser is that the high reflection mirror reflects the pump light as well, which brings the secondary absorption of the pump power into the gain fiber.     

Charge state distribution analysis of AI and Pb ions from the laser ion source at IMP

A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd：YAG laser （E =3 J, 1064 rim, ~ 10 ns） to produce laser plasma for the research of Laser Ion Source （LIS）. At the laser ion source test bench, high purity （99.998%） aluminum and lead targets have been tested for laser plasma experiment. An Electrostatic Ion Analyzer （EIA） and Electron Multiply Tube （EMT） detector were used to analyze the charge state and energy distribution of the ions produced by the laser ion source. The maximum charge states of A112＋ and Pb7＋ were achieved. The results will be presented and discussed in this paper.     

Laser-Assisted Elastic Electron Scattering from Argon

The second Born approximation （SBA） theory is applied to the study of electron-atom scattering in the presence of a CO2 laser field.The absolute differential crass sections of e-Ar scattering are calculated with multiphoton exchange in two special scattering geometries G1 （for small-angle scattering） and G2. For geometry G1, compared with the results of two different model potentials for electron elastic scattering by atoms, it is found that electronatom polarization potential plays an important role in laser-assisted electron-atom scattering. Some calculational results in geometries G2 are given. Our results are found to be better than other theoretical results as compared with the experimental data in geometries G1 and G2.     

Oxygen ion conductivity of Lao.sSro.2Gao.s3Mgo.17-xCoxO3-δ synthesized by laser rapid solidification

Materials Lao.8Sro.2Gao.83Mgo.17_xCox03_6 with x = 0, 0.05, 0.085, 0.10, and 0.15 are synthesized by laser rapid solidification. It is shown that the samples prepared by laser rapid solidification give rise to unique spear-like or leaf-like microstructures which are orderly arranged and densely packed. Their electrical properties each show a general depen dence of the Co content and the total conductivities of Lao.8Sro.2Gao.83Mgo.085Coo.08503_6 prepared by laser rapid solidification are measured to be 0.067, 0.124, and 0.202 S.cm-1 at 600, 700, and 800 ℃, respectively, which are much higher than by conventional solid state reactions. Moreover, the electrical conductivities each as a function of the oxy gen partial pressure are also measured. It is shown that the samples with the Co content values 〈 8.5 mol% each exhibit basically ionic conduction while those for Co content values 〉 10 mol % each show ionic mixed electronic conduction under oxygen partial pressures from 10-16 atm （1 atm = 1.01325 x 105 Pa） to 0.98 atm. The improved ionic conductivity of Lao.sSro.2Gao.83Mgo.085Coo.08503 prepared by laser rapid solidification compared with by solid state reactions is attributed to the unique microstructure of the sample generated during laser rapid solidification.     

Clock-transition spectrum of ^171yb atoms in a one-dimensional optical lattice

An optical atomic clock with 171Yb atoms is devised and tested. By using a two-stage Doppler cooling technique, the 171Yb atoms are cooled down to a temperature of 6 ± 3 μK, which is close to the Doppler limit. Then, the cold 171Yb atoms are loaded into a one-dimensional optical lattice with a wavelength of 759 nm in the Lamb-Dicke regime. Furthermore, these cold 171Yb atoms are excited from the ground-state 1S0 to the excited-state 3P0 by a clock laser with a wavelength of 578 nm. Finally, the 1S0-3P0 clock-transition spectrum of these 171Yb atoms is obtained by measuring the dependence of the population of the ground-state 1S0 upon the clock-laser detuning.     

Electron-Helium Atom Collisions in the Presence of a Bichromatic Laser Field

The differential cross section （DCS） for electron-helium atom collisions in the presence of a bichromatic CO2 laser field is investigated as a function of the scattering angle θ by employing first-Born approximation （FBA） with a simple screening electric potential. We discuss in detail the influence of the scattering geometry, the photon energy and the number of photons exchanged on the DCSs. These illustrate that the three factors have important effects on the elastic scattering and the screening electric potential is effective.     

Effect of structural parameters of Gaussian repaired pit on light intensity distribution inside KH_2PO_4 crystal

KH2PO4 （KDP） crystal with excellent optical properties is a very important element of inertial confinement fusion （ICF） device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage threshold, affecting the crystal service life. In this paper, Gaussian repaired pit is used to replace the crystal surface micro-defects, in order to improve the laser damage resistance of the KDP crystal with surface micro-defects. At first, the physical model of Gaussian repaired pit is built by Fourier model method, and the accuracy of the method is analyzed. It is found that the calculation error can be reduced by increasing the product of the width-period ratio and the truncation constant of the repaired pit. The calculation results about the physical model of Gaussian repaired pit show that the light intensity distribution within the crystal is symmetrical, and there are evidently enhanced light intensity regions in the crystal. Meanwhile, the maximum relative intensity inside the KDP crystal decreases gradually with the increase of the width of the Gaussian repaired pit. Secondly, the Gaussian repaired pits with different widths and the same depth of 20 μm are processed by micro-milling. Their surfaces are very smooth and present the ductile cutting state under the microscope. Finally, the laser damage threshold of the Gaussian repaired pits on the surface of the KDP crystal sample is measured by a 3 ω, 6-ns laser. The results showthat the maximum threshold of the Gaussian repaired pits is 3.12 J/cm2, which is 60% higher than the threshold of initial damage point, and the laser damage threshold increases with the increase of the width of the Gaussian repaired pit.     

33 W quasi-continuous-wave narrow-band sodium D_(2a) laser by sum-frequency generation in LBO

We demonstrate an all-solid quasi-continuous-wave （QCW） narrow-band source tunable to sodium D2a line at 589.159 nm. The source is based on sum-frequency mixing between lasers at 1064 nm and 1319 nm in a LBO crystal. The 1064 nm and 1319 nm lasers are produced from two diode side-pumped Nd：YAG master oscillator power amplifier （MOPA） laser systems, respectively. A 33 W output of 589 nm laser is obtained with beam quality factor M^2 = 1.25, frequency stability better than ±0.2 GHz and linewidth less than 0.44 GHz. A prototype 589 nm laser system is assembled, and a sodium laser guided star has been successfully observed in the field test.     

Time-dependent density functional theoretical studies on the photo-induced dynamics of an HCI molecule encapsulated in C60 under femtosecond laser pulses

By using first-principles simulations based on time-dependent density functional theory, the chemical reaction of an HCl molecule encapsulated in C60 induced by femtosecond laser pulses is observed. The H atom starts to leave the Cl atom and is reflected by the C60 wall. The coherent nuclear dynamic behaviors of bond breakage and recombination of the HCl molecule occurring in both polarized parallel and perpendicular to the H-Cl bond axis are investigated. The radial oscillation is also found in the two polarization directions of the laser pulse. The relaxation time of the H-Cl bond lengths in transverse polarization is slow in comparison with that in longitudinal polarization. Those results are important for studying the dynamics of the chemical bond at an atomic level.