Effect of phosphor settling on the optical performance of phosphor-converted white light-emitting diode

Phosphor settling phenomena exists during the phosphor coating process in the light emitting diode (LED) packaging industry. It is perceived that phosphor settling will affect the concentration of the phosphor, and consequently the concentration will influence the optical performance of phosphor-converted white LED light source. In this paper, an experiment based on the real packaging process was conducted to investigate the phosphor settling phenomena. It was found that the concentration variation of the phosphor embedded in the silicone matrix was very small (less than 1%). Based on the observation of the experiments, the effect of the phosphor settling in the silicone matrix on light extraction efficiency (LEE), correlated color temperature (CCT), angular color uniformity (ACU) and light intensity distribution curve (LIDC) was investigated and discussed by the three dimensional Monte Carlo ray-tracing simulations. It was discovered that the effect of the phosphor settling on the optical performance could be neglected when using the present packaging process.     

Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous efficacy and color rendering

Warm-white LEDs (WLEDs) with high spectral quality and efficiency are required for lighting applications, but current experimental performances are limited. We report on nanocrystal quantum dot (NQD) hybridized WLEDs with high performance that exhibit a high luminous efficacy of optical radiation exceeding 350lm/W(opt) and a high color rendering index close to 90 at a low correlated color temperature <3000K. These spectrally engineered WLEDs are obtained using a combination of CdSe/ZnS core/shell NQD nanophosphors integrated on blue InGaN/GaN LEDs.     

Glareless light-emitting diode lighting tube

We develop a novel light bar waveguide design to produce a glareless light-emitting diode (LED) lighting tube. We design optimal parameters, such as the gap y between the tube and the reflective surface, the relative distance x between the lens and the LED, and so on. Using these parameters, we fabricate an illumination system consisting of LED light bulb installed at both ends of lighting tube. The lighting tube is shaped the same as a traditional fluorescent lighting tube in order to replace traditional lighting tubes without the modification of the lighting stand. The LED lighting tube is glareless to the observer from the side view.     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

Lensless digital holographic microscope with light-emitting diode illumination

We demonstrate the operation of a digital in-line microscope with LED illumination. We show with a practical example that, for typical setups, the limited temporal coherence and the spatial incoherence of the source do not affect the resolving power of the system. On the contrary, important advantages are obtained in terms of signal-to-noise ratio and alignment simplification.     

Improving organic light-emitting diode performance with patterned structures

The influence nano- and micro- structures on light extraction and carrier injection characteristics in organic light-emitting diodes (OLEDs) is examined. The results demonstrate device enhancement from two distinctive patterning scales: embedded microstructure arrays for improved light extraction and imprinted nanostructures for carrier injection enhancement. Further, based on these results, a two-level imprinting stamp is designed which simultaneously produces a micron-sized pattern for facilitating light extraction and a nanometer-sized pattern to improve carrier injection. Additionally, this scalable patterning technology circumvents imprinting misalignment while preserving its compatibility with rollto- roll technology.     

Analytical model of light-emitting diode with patterned contact

In this paper we develop an analytical model for the light-emitting diode (LED) with the metal p-contact patterned as an array of thin strips. The model is based on conformal mapping approach and accounts for the overlapped fringing electric fields created by the adjacent strips. We derive analytical expressions for the electric potential, current injected into the LED active region and power of light extracted via the openings in the pattern. Spatial distribution of electric potential and LED radiation pattern are calculated. Further investigations are necessary to elucidate the contribution of the side walls of the strips on the LED output performance.     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous efficacy and color rendering: comment

This is a comment on a previous Letter [Opt. Lett.35, 3372 (2010)]. The chromaticity coordinates of nanocrystal quantum dot (NQD)-integrated WLED1, WLED2, and WLED3 are out of the range of the chromaticity tolerance quadrangles of white light sources. So these NQD WLEDs do not satisfy the requirements recommended for general lighting with solid-state lighting products to ensure high-quality white light. Furthermore, correlated color temperatures of WLED2 and WLED3 should be 2682 and 2527 K, respectively, according to the chromaticity coordinates of WLED2 and WLED3 at 12 mA, not 2781 and 2390 K. The NQD-integrated WLED1 and WLED2 located in tolerance quadrangles are simulated by the changing spectral power of green-, yellow-, and orange-emitting NQDs. The simulation results are presented.     

Improved contrast polymer light-emitting diode with optical interference layers

An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180° out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device.     

2014年诺贝尔物理学奖给我们的启示

2014年诺贝尔物理学奖授予高效蓝色发光二极管,这是一项具有重大经济和社会效益的技术发明。文章讨论该届诺贝尔物理学奖及获奖人的经历给我们的启示,包括三位诺贝尔奖获得者的洞察力以及持续多年围绕一个重大问题攻关的精神;结合中国科技界现状,本文将着重探讨评价重大科研成果的标准,以及日本科研模式和企业文化中可供国内科技工作者借鉴的积极因素。     

Synthesis and characterization of PPV-based light-emitting copolymer with alkylsilylphenyloxy pendant group for light-emitting diode applications

A novel light-emitting copolymer with high brightness and luminance efficiency was synthesized using the Gilch polymerization method, and its electro-optical properties were investigated. A polymer light-emitting diode (PLED) was fabricated in ITO/PEDOT/light-emitting copolymer/Ca/Al configuration. The turn-on voltage of the PLED was about 5.0 V with maximum brightness and luminance efficiency up to 1420 cd/m² at 16.2 V and 0.5 cd/A at 6.8 V, respectively.     

Novel red perovskite phosphor Ca2AlNbO6:Eu for white light-emitting diode application

Eu³⁺-doped perovskite phosphors of Ca₂AlNbO₆ were synthesized from a solid state reaction. A small amount of the Li₂CO₃ flux was found to greatly shorten calcination time and reduce reaction temperature. The structural and optical properties of the samples were systematically investigated. The excitation spectra of Ca₂AlNbO₆:Eu³⁺ reveal two excitation bands at 398 (⁷F₀→⁵L₆) and 466 nm (⁷F₀→⁵D₂), which match well with the two popular emissions from near-UV and blue LED chips. Under blue light excitation, the red emission of Ca₂AlNbO₆:0.05Eu³⁺ is twice more intense than that of (Y_0.95Eu_0.05)₂O₃. The chromaticity coordinates of (Ca_0.95Eu_0.05)₂AlNbO₆ (x=0.654, y=0.346) are close to the standard values (x=0.670, y=0.330) of National Television Standard Committee (NTSC). The optical properties suggest that Ca₂AlNbO₆:Eu³⁺ is an efficient red-emitting phosphor for light-emitting diode applications.     

Thin-film encapsulation for top-emitting organic light-emitting diode with inverted structure

We theoretically study the light outcoupling efficiency of top-emitting organic light-emitting diode(OLED) with inverted structure and thin-film encapsulation.Thin-film optics is used to optimize the layer thickness to obtain high transmittance.Dipole mode is used to analyze the light outcoupling efficiency of the top-emitting OLED.Through this process,we can optimize the thin-film thickness with high transmittance and optimize the outcoupling efficiency of OLED.Compared with previous research,the current design method is a novel process.     

Phosphor-converted light-emitting diode based on ZnO-based heterojunction

A phosphor-converted light-emitting diode (LED) was realized by coating BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ and (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphors onto an n-ZnO/i-MgO/p-GaN heterojunction diode. Two emission bands at around 450 and 520 nm were observed in the phosphor-converted LED under the injection of continuous current. By analyzing the optical properties of the heterojunction diode and phosphors, it is concluded that the emission at 450 nm comes from (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphor, while the one at 520 nm comes from BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ phosphor under the excitation of the light emitted from the n-ZnO/i-MgO/p-GaN heterojunction diode. The results reported in this paper may provide a route to ZnO-based phosphor-converted LEDs for future lighting or displaying purpose.     

The Monte-Carlo model of a light-emitting diode

The first complete Monte-Carlo model of a surface light-emitting diode is presented in this paper. In the model all important phenomena (including the two-dimensional diffusion of minority carriers before their recombination in the active region and the re-emission of radiation) are taken into account. The influence of various construction parameters on the external quantum efficiency of the homojunction GaAs diode is examined.     

A potential reddish orange emitting phosphor Ca2BO3Cl:Eu for white light-emitting diodes

A series of phosphors Ca₂BO₃Cl:Eu³⁺ were synthesized by using a high-temperature solid-state reaction technique, and their UV–vis luminescence properties were investigated. The f–f transitions of Eu³⁺ in the host lattice were assigned and discussed. The excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet (394 nm), and exhibit reddish orange emission corresponding to the ⁵D₀→⁷F_J (J=0, 1, 2) transitions of Eu³⁺. The influence of the doping concentration and charge compensators on the relative emission intensity of Eu³⁺ was investigated, and the optimum doping concentration is 0.04. The critical distance R_c was estimated to be 17.1 Å in terms of the concentration quenching data. The present study suggests that Ca₂BO₃Cl:Eu³⁺ can be a potential candidate as an UV-convertible phosphor for white light-emitting diodes (LEDs).     

Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer

A 10-nm thickness molybdenum tri-oxide (MoO₃) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq₃) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm², the current efficiency of the tandem OLEDs using the interconnector layers of MoO₃ thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m². The experimental results demonstrated that a MoO₃ thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO₃ interconnector layer.     

GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

ZnO films were deposited on indium tin oxide (ITO), which formed the transparent conductive layer (TCL) of a GaN-based light-emitting diode (LED), by ultrasonic spraying pyrolysis to increase the light output power. The ZnO nanotexture was formed by treating the as-deposited ZnO films with hydrogen. The root mean square (RMS) roughness increased from 4.47 to 7.89 nm before hydrogen treatment to 10.82-15.81 nm after hydrogen treatment for 20 min. Typical current-voltage (I-V) characteristics of the GaN-based LEDs with a ZnO nanotexture layer have a forward-bias voltage of 3.25 V at an injection current of 20 mA. The light output power of a GaN-based LED with a ZnO nanotexture layer improved to as much as about 27.5% at a forward current of 20 mA.