光纤基底TiNi形状记忆合金薄膜制备工艺

将TiNi基记忆合金薄膜与光纤相结合可制成智能化、集成化且成本经济的微机电系统和微传感器件.本文采用磁控溅射法在二氧化硅光纤基底上制备TiNi记忆合金薄膜,系统讨论了溅射工艺参数以及后续退火处理对薄膜质量的影响.采用自研制光纤镀膜掩膜装置在直径为125μm的光纤圆周表面上形成均匀薄膜.实验表明:在靶基距、背底真空度、Ar气流量和溅射时间一定的条件下,溅射功率存在最佳值;溅射压强较大时,薄膜沉积速率较低,但薄膜表面粗糙度较小.进行退火处理后,薄膜形成较良好的晶体结构,Ti_49.09Ni_50.91薄膜中马氏体B19′相和奥氏体B2相共存,但以B19′为主.根据本文研究结果,在玻璃光纤基底上制备高质量的TiNi基记忆合金薄膜是可实现的,本工作为下一步研制微机电系统和微型传感器做了基础准备.     

小角x射线散射确定TiNi薄膜中晶化粒子的长大激活能

用小角x射线散射技术研究以直流磁控溅射方法制备TiNi合金薄膜其退火生成的晶化粒子的长大行为.发现在室温下溅射的TiNi合金薄膜存在小于1nm尺寸的微空洞,将退火后薄膜的小角x射线散射强度扣除退火前微空洞产生的小角x射线散射强度,用这种方法得到的散射强度遵从Porod定律;而用通常方法扣除背底得到的散射强度结果不满足Porod定律.TiNi合金薄膜在733—793K之间退火晶化粒子的长大激活能Eg=301kJmol. 关键词： TiNi薄膜 晶化粒子 长大激活能     

纳米BST薄膜的制备及其折射率特性.

" 采用射频磁控溅射法在石英衬底上沉积了纳米BST(Ba0:65Sr0:35TiO3)薄膜．为了制备优质的BST薄膜,借助X射线衍射仪、场发射扫描电镜和原子力显微镜研究了BST薄膜的晶化行为和显微结构．结果显示在衬底温度600 ℃下制备的BST薄膜经700 ℃退火处理后,具有较强的特征衍射峰和极好的晶化．同时还研究了纳米BST薄膜的制备参数和特性,BST薄膜的折射率是由测量的透射谱中获得的．实验结果表明：纳米BST薄膜的沉积参数对其折射率特性的影响是不尽相同的．折射率随着衬底温度的上升而增加;在较低的溅射     

磁控溅射制备氧化硅薄膜生长速率

氧化硅薄膜是半导体工业中常见的薄膜材料,通常采用化学气相沉积方法制备。但是这种制备方法存在缺欠。采用磁控溅射的方法首先在石英衬底上制备了氧化硅薄膜。研究了射频功率、氧气含量和溅射压强对氧化硅薄膜沉积速率的影响。发现沉积速率随着射频功率的增加而增加;随着氧气含量的增加,先减小后增大;当溅射压强在0.4~0.8 Pa之间变化时,沉积速率变化很小,当溅射压强超过0.8 Pa时沉积速率迅速下降。讨论了不同生长条件下造成氧化硅薄膜生长速率变化的原因。     

金刚石基底上氮化硼薄膜的场发射特性研究

 利用射频磁控溅射方法,在金刚石膜上沉积了氮化硼薄膜。红外光谱分析表明,氮化硼薄膜的结构为六角氮化硼。在超高真空系统中测量了样品的场发射特性,沉积在金刚石膜上的氮化硼薄膜的阈值电场为12 V/μm,最大发射电流密度为272 μA/cm²。并且沉积在金刚石膜上的氮化硼薄膜的场发射特性明显优于金刚石薄膜本身的场发射特性。这说明,氮化硼薄膜可以有效地改善金刚石膜的场发射特性。场发射Fowler-Nordheim（F-N）曲线表明,电子发射是通过遂穿表面势垒完成的。     

薄膜物理与制备

薄膜物理与制备技术研究对于惯性约束聚变(ICF)实验具有重要意义，2003年开展的研究工作主要包括几个方面的内容：低压等离子体化学气相沉积(LPPCVD)法微球CH涂层及掺杂(溴等)技术研究；脉冲激光沉积(PLD)法Fe／Al合金薄膜研制；磁控溅射法Au／Gd，Ti／A1，Ti／Cr支撑薄膜研制；碳氢氮(CxNyH1-x-y)薄膜制备技术研究。相应主要结果如下：(1)利用低压等离子体化学气相沉积(LPPCVD)装置深入考察了以反式-2-丁烯如下：     

玉米蛋白质基底上射频磁控溅射法制备ZnO薄膜

采用射频磁控溅射方法在蛋白质基底上成功地制备了ZnO薄膜,研究了不同靶基距、氩氧比和溅射功率条件对ZnO薄膜性质的影响。结果表明,较小的靶基距有助于ZnO薄膜的c轴择优取向生长。我们还发现,沉积于玉米蛋白质基底的ZnO薄膜存在不同程度的张应力,当Ar/（Ar+O₂）为0.7时,ZnO薄膜内的张应力最小。ZnO近带边发光峰有不同程度的红移,我们认为,这是由于晶界势垒和氧空位V_o造成的。随着溅射功率的增大,薄膜生长速率显著加快,晶粒尺寸增大,ZnO的近带边发光峰位逐渐趋向于理论值。     

纳米SiCN薄膜的制备和光致发光

采用磁控溅射技术制备了SiCN薄膜,利用傅里叶红外光谱仪、扫描探针显微镜、荧光分光光度计对薄膜结构、表面形貌、光致发光进行了表征.结果表明SiCN薄膜有良好的发光性质,通过对薄膜的红外光谱及光致发光谱分析可知,当氩气和氮气流量比为4:1时,最有利于SiCN薄膜的生成,PL发光峰强度也达到最大值,SiCN薄膜的光发射主要来源于带-带直接辐射复合及导带底到缺陷态辐射跃迁.     

蓝宝石光纤端面上ZnO薄膜的制备及其温变光学特性

介绍了利用电子束蒸发技术在蓝宝石光纤端面上生长具有良好表面形貌和晶体结构的ZnO薄膜方法.不同测试温度（室温至773 K）条件下的透射光谱显示,蒸镀在蓝宝石光纤端面上的ZnO薄膜,其光学吸收边随温度升高而发生红移现象,且禁带宽度和热力学温度之间满足E_g（T）=340-491×10^-4T的关系.这为今后进一步利用ZnO薄膜的禁带宽度检测相应的环境温度,研制以ZnO薄膜为敏感材料的新型宽量程光纤温度传感器打下了良好的基础. 关键词： ZnO薄膜 蓝宝石光纤 光学吸收边 光纤温度传感器     

p型未掺杂富锌ZnO薄膜的形成和性能研究

以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.     

Structural, electrical, and optical properties of ZnInO alloy thin films

Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.     

Structures and optical properties of tungsten oxide thin films deposited by magnetron sputtering of WO_3 bulk:Effects of annealing temperatures

Tungsten oxide thin films were deposited on glass substrates by the magnetron sputtering of WO3 bulk at room temperature. The deposited films were annealed at different temperatures in air. The structural measurements indicate that the films annealed below 300℃ were amorphous, while the films annealed at 400℃ were mixed crystalline with hexagonal and triclinic phases of WO3. It was observed that the crystallization of the annealed films becomes more and more distinct with an increase in the annealing temperature. At 400℃, nanorod-like structures were observed on the film surface when the annealing time was increased from 60 min to 180 min. The presence of W=O stretching, W–O–W stretching, W–O–W bending and various lattice vibration modes were observed in Raman measurements. The optical absorption behaviors of the films in the range of 450–800 nm are very different with changing annealing temperatures from the room temperature to 400℃. After annealing at 400℃, the film becomes almost transparent. Increasing annealing time at 400℃ can lead to a small blue shift of the optical gap of the film.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

记录薄膜Te—In—Sb光学性质的研究

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.     

The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices

Zinc oxide films were prepared by rf magnetron sputtering on glass substrates with designed ZnO target using high-purity of zinc oxide (99.99%) powder. Systematic study on dependence of target-to-substrate distance (D_ts) on structural, electrical and optical properties of the as-grown ZnO films was mainly investigated in this work. XRD showed that highly preferred ZnO crystal in the [0 0 1] direction was grown in parallel to the substrate, while the D_ts did not effect to the peak position of XRD. With decreasing D_ts, the growth rate is increased while the electrical resistivity as well as crystal size in the ZnO films was decreased. The XPS data showed that the O/Zn ratio in ZnO films was increased with increasing D_ts in the films. The as-grown ZnO films have an average transmittance of above 85% at the visible region. The optical band gap of the as-grown ZnO films was changed from 3.18 to 3.36 eV with D_ts. With decreasing D_ts, the electrical resistivity was decreased, while the growth rate was increased.A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consists of an ultrathin ZnO layer adjacent to a hole-transporting layer and an Indium tin oxide (ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as a cathode, Al₂O₃ as an electro transport layer, Alq₃ as a luminously layer, TPD as a hole transport layer and ZnO (1 nm)/ITO (150 nm) as an anode. The result of this experiment was not good compared with the case of using ITO, nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 cd/m²) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.     

光学薄膜保护封闭漆

用普通光学镀膜机蒸镀的光学膜,如果暴露在大气中一经受潮,镀膜材料的折射率发生变化,其结果会令光学薄膜的中心波长产生漂移,因而影响薄膜的光学特性。如蒸镀软膜,受潮后漂移则更为严重。另外软膜表面强度差,易擦伤和脱膜。封闭漆既能有效防潮,又能改善光学薄膜表面强度,而且不影响光学薄膜的光学特性。     

Investigation of cladding and coating stripping methods for specialty optical fibers

Fiber optic sensing technology is used extensively in several engineering fields, including smart structures, health and usage monitoring, non-destructive testing, minimum invasive sensing, safety monitoring, and other advanced measurement fields. A general optical fiber consists of a core, cladding, and coating layers. Many sensing principles require that the cladding or coating layer should be removed or modified. In addition, since different sensing systems are needed for different types of optical fibers, it is very important to find and sort out the suitable cladding or coating removal method for a particular fiber. This study focuses on finding the cladding and coating stripping methods for four recent specialty optical fibers, namely: hard polymer-clad fiber, graded-index plastic optical fiber, copper/carbon-coated optical fiber, and aluminum-coated optical fiber. Several methods, including novel laser stripping and conventional chemical and mechanical stripping, were tried to determine the most suitable and efficient technique. Microscopic investigation of the fiber surfaces was used to visually evaluate the mechanical reliability. Optical time domain reflectometric signals of the successful removal cases were investigated to further examine the optical reliability. Based on our results, we describe and summarize the successful and unsuccessful methods.     

国外光学薄膜的应用和真空镀膜工艺

本文概述了国外光学薄膜的典型应用和光学薄膜制造工艺的发展，着重阐述了国外的现代真空镀膜工艺。