共查询到18条相似文献，搜索用时 46 毫秒
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本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究.由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ≈0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响.最后,基于载流子数涨落及迁移率涨落模型,提取γ因子与平均Hooge因子,为评价材料及器件特性奠定基础. 相似文献
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通过溶液法制备了新型有源层钨锌锡氧化物（WZTO）薄膜晶体管（TFT）,研究了不同退火温度对WZTO薄膜和TFT器件性能的影响。XRD结果表明即使退火温度达到500℃,WZTO薄膜仍为非晶态结构。W掺杂显著降低了薄膜表面粗糙度,其粗糙度均从0.9nm降低到0.5nm以下;但不影响薄膜可见光透过率,其透过率均大于85%。同时XPS分析证实随退火温度升高,WZTO薄膜中对应氧空位的峰增加。制备的WZTO器件阈值电压由8.04V降至3.48V,载流子迁移率随着退火温度的升高而增大,开关电流比达到107。 相似文献
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利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率。结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%。将室温制备的IGZO薄膜作为有源层,在低温(＜200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZOTFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0cm2·V-1·s-1,开关比约为107,阈值电压为1.2V,亚阈值摆幅(S)约为0.9V/dec,偏压应力测试a-IGZOTFT阈值电压随时间向右漂移。 相似文献
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非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响 总被引：1，自引：1，他引：1
为了优化镁铟锡氧薄膜晶体管（MITO-TFT）的性能,采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛（O2流量）对器件性能的影响。实验结果表明,O2流量为400cm3/min、退火温度为750℃的MITO薄膜为非晶态,且其对应薄膜晶体管有最佳性能,其饱和迁移率为12.66cm2/（V·s）,阈值电压为0.8V,开关比达到107。适当的退火处理可以有效减少缺陷与界面态密度,并提高器件性能。 相似文献
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采用溶胶-凝胶法制备了非晶锌锡氧化物(ZTO)薄膜晶体管(TFT),通过热重-差热分析(TG-DTA)对ZTO胶体中的化学反应进行了分析,研究了不同退火温度对ZTOTFTs性能的影响。结果表明:当退火温度在300~500℃范围内时,薄膜为非晶态结构,薄膜表面致密、平整。当退火温度达到400℃时,薄膜在可见光范围内具有高透过率(>85%)。随着退火温度的升高,器件阈值电压明显降低,由15.85V降至3.76V,载流子迁移率由0.004cm2·V-1·s-1提高到5.16cm2·V-1·s-1,开关电流比达到105。退火温度的升高明显改善了ZTOTFT的电学性能。 相似文献
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采用溶液法在玻璃衬底上制备InGaZnO薄膜,并以InGaZnO为沟道层制备底栅顶接触型薄膜晶体管,研究了退火温度和Ga含量对InGaZnO薄膜和晶体管电学性能的影响.研究表明,退火可以明显改善溶液法制备InGaZnO薄膜晶体管的电学性能.退火温度的升高会导致薄膜晶体管阈值电压的负向漂移,并且饱和迁移率和电流开关比增大.X射线光电子能谱测量表明,随退火温度的增加,InGaZnO薄膜表面吸附氧减少,沟道层中氧空位增多导致电子浓度增大.退火温度为380?C时,晶体管获得最佳性能.饱和迁移率随Ga含量的增加而减小.In:Ga:Zn摩尔比为5:1.3:2时,晶体管达到最佳性能:饱和迁移率为0.43 cm~2/(V·s),阈值电压为1.22 V,开关电流比为4.7×10~4,亚阈值摆幅为0.78 V/decade. 相似文献
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采用室温射频磁控溅射非晶铟镓锌氧化合物(a-IGZO), 在相对低的温度(<200 ℃)下成功制备底栅a-IGZO 薄膜晶体管器件, 其场效应迁移率10 cm-2·V-1·s-1, 开关比大于107, 亚阈值摆幅 SS为0.4 V/dec, 阈值电压为3.6 V. 栅电压正向和负向扫描未发现电滞现象. 白光发光二极管光照对器件的输出特性基本没有影响, 表明制备的器件可用于透明显示器件. 研究了器件的光照稳定性, 光照10000 s后器件阈值电压负向偏移约0.8 V, 这种漂移是由于界面电荷束缚所致.关键词：非晶铟镓锌氧化合物薄膜晶体管光照稳定性电滞现象 相似文献
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针对非晶铟镓锌氧薄膜晶体管（a-IGZOTFT）的钼/铜源漏电极开展研究。实验证明,单层Mo源漏电极与栅绝缘层之间的粘附性好、表面粗糙度较小、电阻率较大,而单层Cu源漏电极与栅绝缘层之间的结合性差且Cu原子扩散问题严重、表面粗糙度较大、电阻率较小。为了实现优势互补,我们设计了双层Mo（20nm）/Cu（80nm）源漏电极,并采用优化工艺制备了包含该电极结构的a-IGZOTFT。器件具有良好的电学特性,场效应迁移率为8.33cm2·V-1·s-1,阈值电压为6.0V,亚阈值摆幅为2.0V/dec,开关比为1.3×107,证明了双层Mo/Cu源漏电极的可行性和实用性。 相似文献
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由于铟镓锌氧化物(IGZO) 薄膜具有高迁移率和高透过率的特点, 它作为有源层被广泛的应用于薄膜晶体管(TFT). 本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极, 用简单低成本的掩膜法控制沟道的尺寸, 制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管 (IGZO-TFT). 利用X 射线衍射仪(XRD) 和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱, 研究了IGZO薄膜的结构和光学特性. 通过测试IGZO-TFT的输出特性和转移特性曲线, 讨论了IGZO有源层厚度对IGZO-TFT特性的影响. 制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V-1·s-1, 开关比高于107.关键词：非晶铟镓锌氧化物薄膜晶体管有源层 相似文献
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Dongxiang Luo Min Li Miao Xu Jiawei Pang Yanli Zhang Lang Wang Hong Tao Lei Wang Jianhua Zou Junbiao Peng 《固体物理学:研究快报》2014,8(2):176-181
The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H2O2)‐based etchants. Then, after etching the Mo layer, SF6 plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, VGS = ±30 V, VDS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Hyun Soo Shin You Seung Rim Yeon‐Gon Mo Chaun Gi Choi Hyun Jae Kim 《physica status solidi (a)》2011,208(9):2231-2234
The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source–drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge‐trapping sites at in‐ and bottom‐ESLs due to defect passivation with the aid of high‐pressure thermal annealing at 5 atm in H2O ambient. 相似文献
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O. M. Bordun 《Journal of Applied Spectroscopy》2002,69(3):430-433
Luminescence spectra of Y2O3 thin films annealed in air and in vacuum are investigated. It is established that the presence of oxygen vacancies leads to a decrease in the intensity of the luminescence band with a maximum at 3.4 eV (related to emission of selflocalized Frenkel excitons describing the excited state of a molecular ion (YO6)9–) and of the luminescence band with a maximum at 2.9 eV (related to the anion sublattice). It is revealed that the oxygen vacancies also lead to a decrease in the luminescence intensity in the 2.60, 2.35, 2.10. 1.90, and 1.70 eV bands that are related to radiative recombination in the donor–acceptor Y3+–O2– pairs. The donor–acceptor distances are calculated. 相似文献
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Byeong‐Geun Son So Yeon Je Hyo Jin Kim Chul‐Kyu Lee Chang‐Kyu Lee Ah Young Hwang Ju Yeon Won Ji Hun Song Rino Choi Jae Kyeong Jeong 《固体物理学:研究快报》2013,7(7):485-488
Spin‐coated zirconium oxide films were used as a gate dielectric for low‐voltage, high performance indium zinc oxide (IZO) thin‐film transistors (TFTs). The ZrO2 films annealed at 400 °C showed a low gate leakage current density of 2 × 10–8 A/cm2 at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO2 gate insulator exhibited a high field effect mobility of 23.4 cm2/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable Ion/off ratio of ～106. These TFTs operated at low voltages (～3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high‐k dielectric for use in backplane electronics for low‐power mobile display applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium–gallium–zinc oxide thin film transistor, which adopts an elevated-metal metal–oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction.The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the backchannel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device(L = 2 μm). It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region. 相似文献