Electroreflectance spectroscopy of compressively strained InGaN/GaN multi-quantum well structures

The built-in piezoelectric field induced by compressive stress in InGaN/GaN multi-quantum well (MQW) light-emitting diodes (LEDs) was investigated using the electric field dependent electroreflectance (ER) spectroscopic method. InGaN/GaN MQW structures were prepared on sapphire substrates of different thicknesses. Thinning the sapphire substrate enables control of the compressive stress by changing the curvature of the wafer bowing. The wafer bowing-induced mechanical stress alters the piezoelectric field in the InGaN/GaN MQW. The flat band voltage, estimated by measuring the applied reverse bias voltage that induces a 180° phase shift in the ER spectra, was decreased from −11.21 V to −10.51 V by thinning the sapphire substrate thickness from 200 to 60 μm. To calculate the piezoelectric field (F_pz) from the compensation voltage, the depletion width was obtained from the capacitance–voltage measurement. The F_pz estimated from the energy shift in ER peak in a bias range from 0 to −12 V was changed by 110 kV/cm.     

Resonant Raman scattering by N-related local modes in AlGaAs/InGaAsN multiquantum wells

We report resonant Raman scattering and secondary ion mass spectrometry measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma-assisted molecular beam epitaxy. The appearance of a strong TO band at resonance with nitrogen (N)-related electronic levels has been observed. The N-induced vibration mode at 470 cm⁻¹ changes in intensity and shape with increasing N and In content. A new vibration mode has been observed at 320 cm⁻¹, whose intensity scales with the N concentration. This mode is not present in InGaAsN films, so it is linked to the presence of Al. Its frequency is close to the B₁ silent mode of wurtzite GaN. It is attributed to the formation of GaN pairs, near the MQW interfaces as a consequence of the preferential Al–N bonding.     

Zinc diffusion in GaAs and zinc-induced disordering of GaAs/AlGaAs multiple quantum wells: a multitechnique study

A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n10¹⁸ cm^–3) and on multiple quantum well (MQW) structures. The samples were investigated by secondary-ion mass spectroscopy (SIMS), different imaging modes of scanning electron microscopy such as secondary electrons, cathodoluminescence (CL) and electron beam-induced current (EBIC), transmission electron microscopy on a wedge-shaped specimen (WTEM) and by photoluminescence (PL). A nonexponential decay of the low-temperature EBIC signal accompanied by a very low CL signal due to the high density of nonradiative recombination centres were observed in the diffused region of the n-doped GaAs. Indeed, PL measurements demonstrate that Ga vacancies play a key role on the mechanism of the Zn diffusion. On the impurity-induced disordered (IID) MQW samples, an enrichment of Al at the surface was observed by SIMS and confirmed by WTEM and PL. Low-temperature PL spectra show the gradual disappearance of the MQW excitonic transitions as the number of disordered layers increases. When all of the MQW structure is destroyed, the band-to-band recombinations in the IID produced alloy dominate the PL spectrum.     

Vertical transport and relaxation mechanisms in δ-doping superlattices

We report on electron transport in growth direction and relaxation mechanisms in δ-doped GaAs-superlattices. In order to investigate pure electron transport, n-type δ–n–i–p–i structures sandwiched between two n⁺-cladding layers have been investigated, with doping induced barrier heights ΔV smaller than the band gap energy E_g of the host material. An exponential increase of the current is expected with increasing bias due to tunneling through a decreasing barrier. At elevated temperatures, thermally activation over the barriers becomes possible. A simple WKB-model describes the experimental data reasonably well. Moreover, a current step appears in the I–V characteristics at a critical field which is clearly below the breakthrough value. Opto-electrical measurements confirm the existence of holes in the structure at fields larger than the critical field. A model is presented which explains the photocurrent and electroluminescence measurements consistently. The key mechanism is based on a few ballistically traveling electrons that can gain enough energy for interband avalanche multiplication.     

Influence of the doping level on the charge distribution among the inequivalent CuO2 layers in Tl2Ba2Ca2Cu3O10−δ : a NMR study

and NMR measurements in the normal and superconducting states of Tl₂Ba₂Ca₂Cu₃O_10−δ with different δ are reported. In the overdoped Tl2223 sample with T_c=117 K (T_c^opt=123 K) and δ₁<δ^opt different temperature dependencies of the Knight shift are revealed for inequivalent CuO₂ layers. For the inner CuO₂ layer with the square oxygen coordination of Cu the decrease of with temperature is more gradual. In going towards the underdoped Tl2223 with T_c=104 K and δ₂>δ^opt the changes of with temperature are found to be the same for both types of copper layers. The quadrupole coupling constants for copper and oxygen from different CuO₂ layers were obtained. From the variations with doping of the valence contribution to the electric field gradient at copper sites, we estimate both the hole numbers at Cu and oxygen sites and the real concentration of mobile hole carriers n_h in each of inequivalent CuO₂ layers. In the overdoped Tl2223 sample the charge density in the inner layer differs from the one in the outer plane (with five-fold oxygen coordination for Cu). Our results show that the inhomogeneity of the charge distribution disappears in the underdoped regime. The results are compared with calculations of the charge distribution among the CuO₂ planes in multilayered cuprates reported by Haines and Tallon [E.M. Haines, J.L. Tallon, Phys. Rev. B 45 (1992) 3127].     

Measurement of the fine structure of the n = 4 state of hydrogen

A time-resolved spectroscopy technique has been used to measure the fine structure of the n = 4 state of hydrogen. The excited hydrogen atoms were formed by the use of an electron beam to dissociate molecular hydrogen. The resonance transitions were observed by keeping the radio frequency field fixed and sweeping the magnetic field. Measurements on deuterium were used to study the effects of pressure and motional electric fields. The ²S_1/2 → ²P_1/2 Lamb shift transition , the ²P_3/2 → ²S_1/2 fine structure interval ΔE − L, and the ambient electric field in the measurement volume were determined by using measurements on three separate transitions made at fixed magnetic field. The measurements gave and     

First measurements of the HCFC-142b trend from atmospheric chemistry experiment (ACE) solar occultation spectra

The first measurement of the HCFC-142b (CH₃CClF₂) trend near the tropopause has been derived from volume mixing ratio (VMR) measurements at northern and southern hemisphere mid-latitudes for the 2004–2008 time period from spaceborne solar occultation observations recorded at 0.02 cm⁻¹ resolution with the ACE (atmospheric chemistry experiment) Fourier transform spectrometer. The HCFC-142b molecule is currently the third most abundant HCFC (hydrochlorofluorocarbon) in the atmosphere and ACE measurements over this time span show a continuous rise in its volume mixing ratio. Monthly average measurements at northern and southern hemisphere mid-latitudes have similar increase rates that are consistent with surface trend measurements for a similar time span. A mean northern hemisphere profile for the time span shows a near constant VMR at 8–20 km altitude range, consistent on average for the same time span with in situ results. The nearly constant vertical VMR profile also agrees with model predictions of a long lifetime in the lower atmosphere.     

Photoluminescence and electric conductivity in germanium at low temperatures

We have studied the exciton and electron-hole droplet (EHD) luminescence in optically irradiated germanium at temperatures between 1.8 and 4.2 K in the presence of an electric field. Simultaneously the electric conductivity was measured. The sample material was high-purity Ge (N _A –N _D =7·10¹⁰ cm^–3) andp-doped Ge withN _A =3·10¹⁴ cm^–3. In the high-purity Ge samples the exciton and EHD-luminescence intensity decreased nearly linearly as a function of the applied electric current, whereas the dependence upon the electric field was more complicated. Our results could be explained by a model in which carrier annihilation at the contacts following a rapid drifting process plays a dominant role (drift model). In thep-doped Ge samples the current-dependence of the luminescence intensity was qualitatively similar. However, here the drift model is not strictly valid any more because of the reduced carrier mobility and the generation of additional carriers by impurity impact ionization. During variation of the electric field, the luminescence intensity and the electric current show hysteresis. Here the capture of the moving carriers by the EHD appears to play an important role, in addition to the EHD-nucleation process.     

Electroreflectance study of CuIn1−xGaxSe2 thin film solar cells

We have investigated the optical properties of CuIn_1−xGa_xSe₂ (CIGS) thin film solar cells using their electroreflectance (ER) at room temperature. The ER spectra exhibited one broad and two narrow signal regions. Using the photoluminescence (PL) and photocurrent (PC) spectra, the peaks in the low-energy region (1.02–1.35 eV) can be assigned to the CIGS thin film. The PC results implied that the peaks in the high-energy region (2.10–2.52 eV) can be assigned to the CdS band-gap energy. Using the applied bias voltage, the broad signals in the 1.35–2.09 eV region can be assigned to the Franz–Keldysh oscillation (FKO) due to the internal electric field. The ER spectra exhibited a distorted CdS signal for the CIGS thin film solar cell with low shunt resistance and efficiency.     

Hyperfeinstruktur des 82P3/2-Terms von Cäsium 134

The electric quadrupole interaction constantB of the 8p²P_3/2 state of Cs¹³⁴ has been determined by an optical double resonance measurement of the hyperfine structure transition v_F=11/2?F=9/2=47.84(12) Mc/s. The results are: B _8P ¹³⁴ =8.06(20) Mc/s and Q _8P ¹³⁴ =+ 0.427(8) · 10^?24cm². Comparison is made between the measurements in the 7p and 8p electronic states: Q _8P ¹³⁴ /Q _7P ¹³⁴ =0.977(20). The ratio of the corresponding Sternheimer correction factors yields the value C_7p/C_8P=0.982.     

Determination of the (Na) Sternheimer antishielding factor by Na NMR spectroscopy on sodium oxide chloride, Na3OCl

The (Na⁺) Sternheimer antishielding factor γ_∞ (Na⁺) was determined by ²³Na NMR spectroscopy on sodium oxide chloride, Na₃OCl. The quadrupolar coupling constant of the sodium ion in Na₃OCl was determined to QCC=11.34 MHz, which presents the largest coupling constant of a sodium nucleus observed so far. Applying a simple point charge model, the largest principal value of the electric field gradient at the sodium site was calculated to V_zz=−6.76762·10²⁰ V/m². From these values we calculated the (Na⁺) Sternheimer antishielding factor to γ_∞ (Na⁺)=−5.36. In sodium oxide, Na₂O, we observed an isotropic chemical shift of δ_CS=55.1 ppm, referenced to 1 M aqueous NaCl (δ=0 ppm).     

电导率对电流变效应的影响

通过实验和理论分析，证明电导率对直流电场下电流变效应的产生及对其大小的决定作用．电流变机制不仅包括体极化和界面极化过程，而且包括离子的双电层极化过程．低频或直流电场下，显著电流变效应的体系要求σ_p＞σ_f，且ε_p＞ε_f．适当地增大σ_f，提高离子层的静电作用，有利于提高电流变液体的流变性能，但这种做法应以不引起电流过大、焦耳热过多、电功输入过大为前提 关键词：     

Influence of the surface electric field in ion-beam-surface interaction at grazing incidence

We have measured the polarization of light emitted after ion surface scattering at small angle of incidence. The measurements are carried out with H⁺-, H ₂ ⁺ - and He⁺-ions under UHV-conditions with mono- and polycrystalline targets. We explain the typical variation of the polarization as “post collision Stark interaction” (PCSI) in the surface electric field, which can force transitions between nearly degenerate terms. The electric field is composed of two different contributions, a strong but short range surface field which is “seen” by atomsand ions and a long range but weak field due to the image charge which is “seen” to first orderonly by ions. The influence of the electric field on H-Balmer radiation is negligible at typical survival distances r_s≧0.35nm. But in contrast to H-atoms He⁺-ions feel the additional influence of the image field leading to a strong alteration of the polarization of the emitted light. The polarization of the Balmer-radiation stemming from Coulomb exploding H ₂ ⁺ -beams is observed to be modified by the electric field of the “spectator proton”.     

Asymmetric Fabry-Perot modulators with an InGaAs/AlGaAs active region

Strained layer superlattices have been used as the active region in asymmetric Fabry-Perot cavity optical modulators. The active layer of the Fabry-Perot modulator consisted of a 50 period In_0.15 Ga_0.85As/Al_0.30Ga_0.70As (10nm/10nm) superlattice. These quantum wells operate at typical wavelength of around 960 nm. By varying the length of the Fabry-Perot cavity in the modulator by including AlGaAs space layers of different thicknesses in the cavity, it is shown experimentally that both normally on and normally off devices can be obtained using the same stack of quantum wells. For the first type of device operation, a maximum contrast ratio of 8.3 dB could be measured for a reverse voltage of 7 V at 969 nm, while for the second type, a maximum of 8.9 dB at 957 nm was obtained for a 20 V reverse voltage. Using the same structure with an extra Bragg reflector on top of the quantum well layers to increase the surface reflection, a device with a higher finesse of the cavity was obtained. A maximum contrast ratio of 11.5 dB was measured for a reverse bias voltage of 30 V at 978 nm, with an insertion loss of –4.2dB.     

Ion–ion interactions of LiPF6 and LiBF4 in propylene carbonate solutions

Self-diffusion coefficients of Li⁺ D_Li⁺, PF₆⁻ D_PF6⁻ and solvent propylene carbonate (PC) D_PC in LiPF₆−PC solutions were determined at 298 K by the pulse gradient spin echo (PGSE) NMR technique over the salt concentration range of 0.1–3.0 M (M = mol dm^– 3). The order of the diffusion coefficients was found to be D_Li⁺ < D_PF6⁻ < D_PC over the concentration range examined, and they were monotonically decreased with increasing the salt concentration. Haven ratio Λ/Λ_NMR, where Λ and Λ_NMR represent the ionic conductivity measured electrochemically and that estimated via the Nernst-Einstein equation using the diffusion coefficient, respectively, was evaluated as the measure of the ion–ion interaction in the LiPF₆–PC solutions. Though Λ/Λ_NMR values for LiPF₆-solutions decrease with increasing the salt concentration, they were greater than those for LiBF₄–PC solutions over the whole concentration range examined, which indicates that the ion pair formation ability of PF₆^– ion is weaker than that of the BF₄^– ion. The smaller value of the ionic conductivity for the highly concentrated LiPF₆–PC solution (above 2.0 M) than that of the LiBF₄-solutions can be attributed to the more rapidly increased viscosity relative to the LiBF₄-solution. Classic molecular dynamics (MD) simulations for the respective LiPF₆ and LiBF₄-solution of 0.5 and 1.0 M were also carried out based on the effective pair potentials. Diffusion coefficients, ionic conductivity and Haven ratio for these solutions were calculated from MD trajectories, and they qualitatively agree with those evaluated by experiments. Pair correlation functions g_LiO(r) (for Li⁺–O (PC) pair) and g_LiPF6(r) (for Li⁺–PF₆^– pair) or g_LiBF4(r) (for Li⁺–BF₄^– pair) revealed that the lithium ion weakly forms the contact ion pairs with PF₆^–, whilst strongly with BF₄^–, which supports the present experimental results. Moreover, the simulation results show that both anions in the contact ion pairs predominantly take the monodentate form, which is in contrast to the multidentate coordination predicted by ab initio calculation in gas phase.     

Wavelength selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structures

The quantum confined Stark effect causes a strong wavelength and voltage dependence of photocurrent near excitonic resonances which is used to study the wavelength selectivity of p-i(MQW)-n photodiode. For a parallel input of optical bits each coming at a different wavelength, the selectivity is considered good if the state of a λ_i wavelength bit can be detected regardless of the λ_j (j ≠ i) state of the bits. Photocurrent is found to have very good selectivity if λ_j bits are all zero, i.e. the optical information is serial. However, we find that differential photocurrent (Δ I_ph/ΔV) provides a good selectivity for random states of λ_j bits (i.e. parallel input). Four channel selectivity is demonstrated at 200K. Specially designed quantum well structures can greatly improve this selectivity.     

On the spectrum of a random walk on the discrete Heisenberg group and the norm of Harper''s operator

Harper's operator is the self-adjoint operator on defined by

Full-size image

. We first show that the determination of the spectrum of the transition operator on the Cayley graph of the discrete Heisenberg group in its standard presentation, is equivalent to the following upper bond on the norm of H_θ,: H_{θ,≤ 2(1 + √2 + cos(2πθ))}. We then prove this bound by reducing it to a problem on periodic Jacobi matrices, viewing H_θ, as the image of H_θ = U_θ + _θ^* + V_θ + V_θ^* in a suitable representation of the rotation algebra A_θ. We also use powers of H_θ to obtain various upper and lower bounds on H_θ = maxH_θ,. We show that “Fourier coefficients” of H_θ^k in A_θ have a combinatorial interpretation in terms of paths in the square lattice ². This allows us to give some applications to asymptotics of lattice paths combinatorics.     

Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors

We study the dark current of the GaAs/AlGaAs quantum-well infrared photodetector (QWIP) by assuming a drift-diffusion carrier transport in the barriers where the electric fields are obtained by the current continuity condition and the self-consistent energy band structure. It has been shown that due to the current continuity condition, the dark currents across the QWIP devices are determined by the thermionic emission from the emitter to the multiple quantum well (MQW) region. The self-consistent calculation of the Schrödinger and Poisson equations shows a weak electric field in the barrier region connecting to the emitter (much smaller than the average field across the QWIP at low bias) due to the accumulation of carriers in the triangle quantum well formed at the emitter-MQW interface, which results in a very small dark current at low bias. The numerical results explain well our experimental observation.     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

Response of Granular La1??xCaxMnO3 Film to 10?GHz and 35?GHz Frequency Electromagnetic Radiation

The nonbolometric response of La_1 − xCa_xMnO₃ film to 10 GHz and 35 GHz frequency electromagnetic radiation is investigated in the case when, in addition to the strong electric field of the wave, the film is subjected to a stationary electric bias field. Dependences of responses on the radiation power P at temperature T = 80 K are presented. In the low power region, a linear dependence of the response on P is observed at both frequencies whereas for high powers the dependence behaves as ~P ^1/2. The obtained results are explained taking into account that the nonbolometric response originates from the intergranular junctions that operate in the reverse current regime. There two effects take place: (i) at low powers the detection resistance decreases with increasing power P, and (ii) at higher powers in addition to that the film resistance decreases as P ^1/2 due to the avalanche of charge carriers in the electric field of the electromagnetic wave.