Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure

The characteristics of a photovoltaic X-ray detector based on the GaAs p ⁺-n-n′-n ⁺ epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capacitance-voltage characteristics of the epitaxial structures are analyzed together with the built-in electric field profile in the n-GaAs depleted region. The efficiency of charge accumulation in the photovoltaic detector is measured for zero bias and for a bias voltage of 17 V. It is shown that the GaAs-based photovoltaic X-ray detector can operate with zero bias voltage at room temperature. The sensitivity of the detector is measured as a function of the effective energy of X-rays and the angle of incidence of X-ray photons.     

The effect of non-linear capacitances in the localization properties of aperiodic dual electric transmission lines

This study investigates the localization properties of dual electric transmission lines with non-linear capacitances. The V_C,n voltage across each capacitor is selected as a non-linear function of the electric charge q_n, i.e., V_C,n = q_n(1/C_n -ε_n|q_n|²)where C_n is the linear part of the capacitance and ε_n the amplitude of the non-linear term. We follow a binary distribution of values of ε_n, according to the Thue-Morse m-tupling sequence. The localization behavior of this non-linear case indicates that the case m = 2 does not belong to the m ≥ 3, family because when m changes from m = 2 to m = 3, the number of extended states diminishes dramatically. This proves the topological difference of the m = 2 and m = 3 families. However, by increasing m values, localization behavior of the m-tupling family resembles that of the m = 2, case because the system begins to regain its extended states. The exact same result was obtained recently in the study of linear direct transmission lines with m-tupling distribution of inductances. Consequently, we state that the localization behavior of the m-tupling family as a function of the m value is independent of both the linear and the non-linear system under study, but independent of the kind of transmission line (dual or direct). This is curious behavior of the m-tupling family and thus deserves more scholarly attention.     

Effect of the <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> junction breakdown mechanism on the Er<Superscript>3+</Superscript> ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

A series of Si: Er/Si light-emitting diode structures with a smoothly varying p-n junction breakdown mechanism, grown through sublimation molecular-beam epitaxy, is used to investigate the effect of the breakdown mechanism on the electroluminescence of the structures. The maximal intensity and excitation efficiency of room-temperature Er³⁺ ion electroluminescence are shown to be attained in diode structures with a mixed breakdown mechanism.     

Kaonic production of $ \Lambda$(1405) off deuteron target in chiral dynamics

The K^--induced production of \( \Lambda\)(1405) is investigated in K ^- d \( \rightarrow\) \( \pi\) \( \Sigma\) n reactions based on coupled-channels chiral dynamics, in order to discuss the resonance position of the \( \Lambda\)(1405) in the \( \bar{{K}}\) N channel. We find that the K ^- d \( \rightarrow\) \( \Lambda\)(1405)n process favors the production of \( \Lambda\)(1405) initiated by the \( \bar{{K}}\) N channel. The present approach indicates that the \( \Lambda\)(1405) -resonance position is 1420MeV rather than 1405MeV in the \( \pi\) \( \Sigma\) invariant-mass spectra of K ^- d \( \rightarrow\) \( \pi\) \( \Sigma\) n reactions. This is consistent with an observed spectrum of the K ^- d \( \rightarrow\) \( \pi^{{+}}_{}\) \( \Sigma^{{-}}_{}\) n with 686-844MeV/c incident K^- by bubble chamber experiments done in the 70s. Our model also reproduces the measured \( \Lambda\)(1405) production cross-section.     

The Structure of Radiative Tunnel Recombination Sites in Emulsion Microcrystals of AgBr(I)

To identify the structure of emissive tunnel recombination sites in the emulsion microcrystals of silver bromide AgBr(I) with iodine contaminations and to determine the role of an emulsion medium in their formation, the temperature dependence of the luminescence spectra in the range from 77 to 120 K, the kinetics of the growth of the maximum luminescence intensity value at λ ≈ 560 nm, and the luminescence flash spectrum stimulated by the infrared light are investigated. Two types of the AgBr_{1 – x}(I _x ) (x = 0.03) microcrystals—namely, obtained in an aqueous solution and on a gelatin substrate—are used in the studies. It is established that the emissive tunnel recombination sites with a luminescence maximum at λ ≈ 560 nm in AgBr_{1 – x}(I _x ) (x = 0.03) are the {(I _a ^- I _a ^- )Ag _i ⁺ } donor–acceptor complexes with the I _a ^- iodine ions located in neighbor anionic sites of the AgBr(I) crystal lattice, next to which the Ag _i ⁺ interstitial silver ion is positioned. With an increase in the temperature, the {(I _a ^- I _a ^- )Ag _i ⁺ } sites undergo structural transformation into the {(I _a ^- I _a ^- )Ag_in⁺} sites, where n = 2, 3, …. Moreover, the {(I _a ^- I _a ^- )Ag _in ⁺ } sites (n = 2) after the capture of an electron and hole also provide the tunnel recombination with a luminescence maximum at λ ≈ 720 nm. The influence of an emulsion medium consists in that gelatin interacts with the surface electron-localization sites, i.e., the interstitial silver ions Ag _in ⁺ , n = 1, 2, and forms the complexes {Ag _in ⁰ G⁺} (n = 1, 2) with them. The latter are deeper electron traps with a small capture cross section as compared to the Ag _in ⁺ sites (n = 1, 2) and that manifest themselves in that the kinetics of the luminescence growth in AgBr(I) to a stationary level at λ ≈ 560 nm is characterized by the presence of “flash firing.” At the same time, the luminescence flash stimulated by IR light, for which the Ag _in ⁺ (n = 1, 2) electron-localization sites are responsible, is absent. It is supposed that the electrons localized on the {Ag _in ⁺ G⁺} complexes (n = 2) retain the capability for emissive tunnel recombination with holes localized on paired iodine sites with a luminescence maximum at λ ≈ 750 nm.     

Maximum coefficient of light extinction in a nonabsorbing dispersive medium

The maximum value of the light extinction coefficient μ, which can be observed in a dispersive medium with a relative refractive index n of the scattering particles, is studied within the framework of a quasi-crystalline approximation for nonabsorbing dispersive media consisting of monodisperse spherical scatterers. A change in the diffraction parameter x of the scattering particles and their volume concentration c _v is accompanied by nonmonotonic variations of the extinction coefficient, and the function μ(x, c _v ) exhibits several maxima. The dimensions and concentrations of particles are determined, for which the extinction coefficient reaches the absolute maximum μ^max. The μ^max value exhibits a monotonic growth with increasing relative refractive index n of the scattering particles. The conditions of validity of the Ioffe-Regel criterion of radiation localization have been studied. It is established that the localization in nonabsorbing dispersive media can be observed only for n ? 2.7. The intervals of x and c _v in which the criterion of radiation localization is satisfied in dispersive media consisting of particles with n = 3.0 and 3.5 are determined.     

Electron Paramagnetic Resonance Investigations of ZnSe:Mn Nanocrystals

Colloidal nanocrystals of ZnSe doped with Mn²⁺ were synthesized in non-polar medium using hot-injection technique. Obtained samples were characterized by means of photoluminescence and absorption spectroscopies. To confirm the incorporation of Mn²⁺ impurity and to reveal its state and localization, electron paramagnetic resonance (EPR) spectroscopy was employed. As a result, EPR spectra were analyzed and hyperfine splitting constant and g-factor for Mn²⁺ dopant were determined.     

Comparative analysis of proton and pion scattering on the isotopes <Superscript>6,8</Superscript>Не within Glauber theory

The differential cross sections for p^6,8He and p^6,8He scattering at the RIKEN andGSI energies (0.073 and 0.7 GeV per nucleon) were calculated on the basis of Glauber theory. Pion and proton interaction with a nucleus is determined by the multiple-scattering series (Glauber operator), so that various collision multiplicities and their contributions to the summed cross section can be taken into account. The use of the α-n-n wave function for ⁶He and the wave function on the basis of the large-scale shell model (LSSM) for ⁸He makes it possible to calculate analytically scattering matrix elements.     

Antiproton-nucleus electromagnetic annihilation as a way to access the proton timelike form factors

Contrary to the reaction \( \bar{{p}}\) p \( \rightarrow\) e ⁺ e ^- with a high-momentum incident antiproton on a free target proton at rest, in which the invariant mass M of the e ⁺ e ^- pair is necessarily much larger than the \( \bar{{p}}\) p mass 2m , in the reaction \( \bar{{p}}\) d \( \rightarrow\) e ⁺ e ^- n the value of M can take values near or below the \( \bar{{p}}\) p mass. In the antiproton-deuteron electromagnetic annihilation, this allows to access the proton electromagnetic form factors in the timelike region of q² near the \( \bar{{p}}\) p threshold. We estimate the cross-section \(d\sigma _{\bar pd \to e^ + e^ - n} /d\mathcal{M}\) for an antiproton beam momentum of 1.5GeV/c. We find that near the \( \bar{{p}}\) p threshold this cross-section is about 1pb/MeV. The case of heavy-nuclei target is also discussed. Elements of experimental feasibility are presented for the process \( \bar{{p}}\) d \( \rightarrow\) e ⁺ e ^- n in the context of the \( \overline{{{\rm P}}}\) ANDA project.     

The Numerical Simulation of the Nanosecond Switching of a <Emphasis Type="Italic">p</Emphasis>-SOS Diode

Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon p⁺P₀n⁺ structure (p-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the n⁺ region at the n⁺P⁰ junction, while the second domain is formed in the P⁰ region at the interface with the p⁺ layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron–hole plasma pumping in and out is accurately taken into account.     

A More Efficient Contextuality Distillation Protocol

Based on the fact that both nonlocality and contextuality are resource theories, it is natural to ask how to amplify them more efficiently. In this paper, we present a contextuality distillation protocol which produces an n-cycle box B ? B ^′ from two given n-cycle boxes B and B ^′. It works efficiently for a class of contextual n-cycle (n ≥?4) boxes which we termed as “the generalized correlated contextual n-cycle boxes”. For any two generalized correlated contextual n-cycle boxes B and B ^′, B ? B ^′ is more contextual than both B and B ^′. Moreover, they can be distilled toward to the maximally contextual box C H _n as the times of iteration goes to infinity. Among the known protocols, our protocol has the strongest approximate ability and is optimal in terms of its distillation rate. What is worth noting is that our protocol can witness a larger set of nonlocal boxes that make communication complexity trivial than the protocol in Brunner and Skrzypczyk (Phys. Rev. Lett. 102, 160403 2009), this might be helpful for exploring the problem that why quantum nonlocality is limited.     

Multiple multicontrol unitary operations: Implementation and applications

The efficient implementation of computational tasks is critical to quantum computations. In quantum circuits, multicontrol unitary operations are important components. Here, we present an extremely efficient and direct approach to multiple multicontrol unitary operations without decomposition to CNOT and single-photon gates. With the proposed approach, the necessary two-photon operations could be reduced from O(n³) with the traditional decomposition approach to O(n), which will greatly relax the requirements and make large-scale quantum computation feasible. Moreover, we propose the potential application to the (n-k)-uniform hypergraph state.     

Censored Glauber Dynamics for the Mean Field Ising Model

We study Glauber dynamics for the Ising model on the complete graph on n vertices, known as the Curie-Weiss Model. It is well known that at high temperature (β<1) the mixing time is Θ(nlog?n), whereas at low temperature (β>1) it is exp?(Θ(n)). Recently, Levin, Luczak and Peres considered a censored version of this dynamics, which is restricted to non-negative magnetization. They proved that for fixed β>1, the mixing-time of this model is Θ(nlog?n), analogous to the high-temperature regime of the original dynamics. Furthermore, they showed cutoff for the original dynamics for fixed β<1. The question whether the censored dynamics also exhibits cutoff remained unsettled.In a companion paper, we extended the results of Levin et al. into a complete characterization of the mixing-time for the Curie-Weiss model. Namely, we found a scaling window of order \(1/\sqrt{n}\) around the critical temperature β _c =1, beyond which there is cutoff at high temperature. However, determining the behavior of the censored dynamics outside this critical window seemed significantly more challenging.In this work we answer the above question in the affirmative, and establish the cutoff point and its window for the censored dynamics beyond the critical window, thus completing its analogy to the original dynamics at high temperature. Namely, if β=1+δ for some δ>0 with δ ² n→∞, then the mixing-time has order (n/δ)log?(δ ² n). The cutoff constant is (1/2+[2(ζ² β/δ?1)]^?1), where ζ is the unique positive root of g(x)=tanh?(β x)?x, and the cutoff window has order n/δ.     

Probabilities of radiative dipole transitions of parahelium in an electric field

Quadratic Stark corrections to the wave functions, matrix elements, and probabilities of transitions between the singlet states ¹ S ₀ and ¹ P ₁ of helium atoms are calculated. The coefficients of the polynomials that depend on the effective principal quantum number of the upper level v _f and that approximate the numerical values of the polarizabilities, the quadratic corrections to the wave functions, and the probabilities of transitions to highly excited Rydberg states with large v _f are determined. The results of calculations testify that the probabilities of all σ transitions n _i ¹ S ₀ → n _f ¹ P ₁ and π transitions to the states with n _f > n _i /2 are decreased with increasing electric field strength, except for the transition 2¹ S ₀ → 2¹ P ₁, whose probability increases both for σ and for π transitions.     

Overtone transitions of diatomic dimers XH<Superscript>−</Superscript>-XH<Superscript>−</Superscript> in ionic crystals

The resonance interaction of molecular defects XH^– in ionic crystals is considered. In the dipole approximation, the frequencies and intensities of vibrational transitions of diatomic dimers ^mXH^?-ⁿXH^? are found for the exact (m=n) and quasi-exact (m≠n) resonances. The interaction-atrix elements are obtained with regard to the mechanical anharmonicity in the second order of the theory of perturbation for the case of a linear dependence of the dipole moment of a diatomic molecule on the vibrational coordinate. The expressions obtained are applied to the calculation of overtones in the absorption spectrum of dimers ^mSH^?-ⁿSH^? in a KCl crystal.     

Effect of incommensurate potential on the resonant tunneling through Majorana bound states on the topological superconductor chains

We study the transport through the Kitaev chain with incommensurate potentials coupled to two normal leads by the numerical operator method. We find a quantized linear conductance of e ² / h, which is independent to the disorder strength and the gate voltage in a wide range, signaling the Majorana bound states. While the incommensurate potential suppresses the current at finite voltage bias, and then narrows the linear response regime of the I-V curve which exhibits two plateaus corresponding to the superconducting gap and the band edge, respectively. The linear conductance abruptly drops to zero as the disorder strength reaches the critical value 2g _s + 2Δ with Δ the p-wave pairing amplitude and g _s the hopping between neighbor sites, corresponding to the transition from the topological superconducting phase to the Anderson localized phase. Changing the gate voltage also causes an abrupt drop of the linear conductance by driving the chain into the topologically trivial superconducting phase, whose I-V curve exhibits an exponential shape.     

Mössbauer study of the magnetocaloric compound AlFe<Subscript>2</Subscript><Emphasis Type="Bold">B</Emphasis><Subscript>2</Subscript>

Mössbauer spectroscopy in the ferromagnetic AlFe₂ B ₂ reveals T_c=299 K and shows good agreement with magnetic measurements. The crystals are plate-shaped. The flakes are found from X-ray diffraction to be in the crystallographic ac-plane in the orthorhombic system. The axes of the principle electric field gradient tensor are, by symmetry, colinear with the crystal a-, b- and c-axes. By using information about the quadrupole splitting and line asymmetry in the paramagnetic regime together with the quadrupole shift of the resonance lines in the ferromagnetic regime the magnetic hyperfine field direction is found to be in the ab-plane having an angle =40^° to the b-axis.     

A strongly asymmetric single-electron transistor operating as a zero-biased electrometer

We have studied a strongly asymmetric Al single-electron transistor with R₁ ? R₂ and C₁ ? C₂, where R_{1, 2} and C_{1, 2} are the tunnel resistances and capacitances of the first and second junction respectively. Due to the asymmetry in its electric parameters leading to strong asymmetry of the nonlinear I–V curve at zero bias (V = 0), the transistor demonstrated a remarkable current response to an AC signal at the values of the gate charge Q₀ close to (n + 1/2)e, where n is integer. A rather delicate regime of the transistor operation (V ? e/C_Σ) being important for unperturbed measurements was examined. The measured curves are in good agreement with a model based on the orthodox theory of single electron tunneling. This specific zero bias regime of an asymmetric transistor opens new opportunities for a single-electron transistor as an ultrasensitive charge/field sensor.     

Existence of two types of perfect Bi<Subscript>2</Subscript>Sr<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CuO<Subscript>6+δ</Subscript> single crystals

It is found that perfect Bi₂Sr_2?x La _x CuO_6+δ single crystals with the same concentrations of lanthanum x = 0.64 and excess oxygen δ = 0.237 exist in two types. Single crystals of the first type are obtained by slow cooling (the synthesis time is 90–105 h). They have a monoclinic superlattice and exhibit no superconducting transition down to 2 K. Crystals of the second type are obtained by rapid cooling (the synthesis time is 30–40 h) and are characterized by a orthorhombic superlattice and T _c = 18 K. Thus, the superconducting transition temperature is determined not only by the concentration of carriers but also by the configuration of defects. A rhombic superlattice prevails in single crystals obtained by slow cooling in the lanthanum concentration range x = 0.3–0.5, while a monoclinic superlattice dominates in the range x = 0.75–0.85. This fact explains the high values of T _c at optimal doping (x = 0.4) and the absence of high-T _c superconductivity at p < 0.10.     

Study of background processes with the formation of neutrons in nuclear reactions in the energy range of 26–32 kev

The nature of background processes accompanying astrophysical nuclear reactions induced by hydrogen, helium, and neon ions in deuterated targets with small cross sections has been studied in calculations and experiments. The experiments have been performed at a Hall pulsed plasma accelerator in the ion energy range of 26–32 keV. The yield of background neutrons and γ-quanta with energies below 4 MeV in the proton-induced D(p, γ)³He reaction is primarily due to the presence of a natural impurity of gaseous deuterium in gaseous hydrogen and the chain of D(D, ³He)n → (n, γ) or (n, n'γ) reactions. A small contribution comes from the chain of D(¹H, ¹H)D → D(D, ³He)n → (n, γ) or (n, n'γ) reactions. It has been shown that background neutrons and γ-quanta from the D(4He, γ)6Li reaction are entirely due to the chain of D(⁴He, ⁴He)D → D(D, ³He)n → (n, γ) or (n, n'γ) reactions. It has been shown that the yield of neutrons and γ-ray photons detected at the interaction of neon ions with deuterated targets is also entirely due to the chain of elastic- scattering reactions of neon ions on deuterons in the target and to subsequent inelastic processes of interaction of deuterons accelerated at elastic scattering with other deuterons of the target. The main contribution to the yields of background neutrons and γ-quanta comes from doubly charged neon ions. The main conclusion is that the explanation of the yield of neutrons and γ-quanta at the interaction of hydrogen, helium, and neon ions with deuterated targets does not require “exotic” theoretical models.