Electrical transport and magnetic properties of perovskite-type electron-doped La–Pr–Mn–O epitaxial films

La_1−xPr_xMnO₃ (LPrMO) thin films have been epitaxially grown on (1 0 0)SrTiO₃ single-crystal substrates by pulsed-laser deposition. The films have a perovskite structure and give rise to the colossal magnetoresistance effect with the maximum magnetoresistance ratio of 10³% (at 240 K and 5 T). The electrical transport and magnetic properties have been investigated for the La_0.8Pr_0.2MnO₃ film with thickness 3000 Å. The results indicate that the films have quite a distinctive magnetotransport behavior compared to the bulk. The analysis of X-ray photoemission spectroscopy suggests that the valence state of Pr is 4+ in LPrMO film. Therefore, the epitaxial film is most likely an electron-doped colossal magnetoresistance system.     

Magnetic, electronic, dielectric and optical properties of Pr(Ca:Sr)MnO 3

The charge-ordered perovskite Pr_0.65Ca_0.28Sr_0.07MnO₃ was investigated by means of magnetic susceptibility, specific heat, dielectric and optical spectroscopy and electron-spin resonance techniques. Under moderate magnetic fields, the charge order melts yielding colossal magnetoresistance effects with changes of the resistivity over eleven orders of magnitude. The optical conductivity is studied from audio frequencies far into the visible spectral regime. Below the phonon modes hopping conductivity is detected. Beyond the phonon modes the optical conductivity is explained by polaronic excitations out of a bound state. ESR techniques yield detailed informations on the (H,T ) phase diagram and reveal a broadening of the linewidth which can be modeled in terms of activated polaron hopping. Received 9 August 2000     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Colossal pressure-induced negative resistance change in La2/3Ca1/3MnO3 thin films

2/3 Ca_1/3MnO₃ thin films as a function of temperature from 4 to 300 K are studied. The application of external pressure increases the temperature of the metal–insulator transition (T_MI). For a film showing T_MI at about 177 K, a colossal change in resisitivity (R(0)-R(p))/R(p) qualitatively comparable to the magnetoresistance (R(0)-R(B))/R(B) around the transition temperature, is observed. However, this change for the film with high T_MI (267 K) is smaller by a factor of about 100. The increase of T_MI with pressure is intimately associated with the pressure-induced contraction and alignment of Mn-O-Mn bonds and the possible enhancement of the double-exchange interaction with pressure. Received: 11 September 1998/Accepted: 12 September 1998     

Large lattice compression coefficient and uniaxial piezoresistance in CMR perovskite La1−XSrXMaO3 (0.15 ≤ x ≤ 0.25)

Using a method of in-situ pressing X-ray diffraction, a uniaxial pressure-induced unusual change of lattice parameters and a remarkable crystal structural distortion have been observed in the perovskite-type La-Sr-Mn-O system. The pressure coefficient of lattice parameter in [200] orientation, i.e. dlnd _Mn-O-Mn/dP, can reach about 3.76 × 10^?4/Map for La_0.85Sr_0.15MnO₃. Under a uniaxial pressure of only 20 ～ 30 20&;30 MPa, a giant piezoresistance and an evident increase of Tp, the onset of the metal-semiconductor-like (M-S) transition have also been obtained. These effects suggest that the structure of colossal magnetoresistance perovskites is very flexible and their transport properties are structurally sensitive.     

Isotope effect for transport and magnetic properties of La 0.35 Pr 0.35 Ca 0.3 MnO 3 thin films

The effect of ¹⁶ O → ¹⁸ O isotope substitution on electrical resistivity, magnetoresistance, and ac magnetic susceptibility was studied for La_0.35Pr_0.35Ca_0.3MnO₃ epitaxial thin films deposited onto LaAlO₃ and SrTiO₃ substrates. For the films on LaAlO₃, the isotope substitution resulted in the reversible transition from a metal-like to insulating state. The applied magnetic field ( H ≥ 2 T) transformed the sample with ¹⁸O back to the metallic state. The films on SrTiO₃ remained metallic at low temperatures for both ¹⁶O and ¹⁸O, but the shift of the resistivity peak corresponding to onset of metallic state exceeded 63 K after ¹⁶ O → ¹⁸ O substitution. The temperature dependence of both resistivity and magnetic susceptibility was characterized by hysteresis, especially pronounced in the case of the films on LaAlO₃. Such a behavior gives certain indications of the phase separation characteristic of interplay between ferromagnetism and charge ordering. Received 11 February 2000 and Received in final form 13 September 2000     

Electrical resistivity and magnetoresistance of nonuniformly mechanically strained films (30 nm) of the La0.67Ca0.33MnO3 manganite

The structure, electrical resistivity, and magnetoresistance of predominantly oriented La_0.67Ca_0.33MnO₃(30 nm)/LaAlO₃ films are investigated after partial relaxation of biaxial mechanical stresses. The negative magnetoresistance MR of the films reaches a maximum at T = 235–240 K. The full width at half-maximum of the peak in the curve MR(T) for a film is five to six times greater than that for a manganite layer grown on a substrate with a small lattice mismatch. For T < 150 K, the temperature dependence of the electrical resistivity ρ of the films is fitted well by the relationship ρ = ρ₀ + ρ₁ (H)T ^4.5, where ρ₀ ≡ ρ(T = 4.2 K) and ρ₁(H) is a parameter that is independent of temperature but dependent on the magnetic field H. The parameter ρ₁(H = 0) for the La_0.67Ca_0.33MnO₃(30 nm)/LaAlO₃ films is several times larger than that for thin manganite layers only weakly strained by the substrate. The electrical resistivity ρ₁ decreases almost linear as the quantity μ₀ H increases in the field range 1–5 T.     

Oxygen deficiency dependence of magnetic and magnetoresistive properties for La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition

The complete (001)-oriented thin films of La_0.5Sr_0.5CoO_3-x (LSCO) are deposited on (001) SrTiO₃ substrates by pulsed laser deposition under reduced oxygen pressure. It is revealed that the c axis of the film stretches with depleting oxygen. The magnetic, electrical, and magnetoresistive properties of the films are characterized by means of various techniques. Significant dependence of these properties on oxygen deficiency in the films is demonstrated, with enhanced magnetoresistance recorded for the samples deposited over a wide range of reduced oxygen pressure. Received: 9 July 1998 / Accepted: 15 January 1999 / Published online: 31 March 1999     

Nature of the low-temperature colossal magnetoresistance of La0.35Nd0.35Sr0.3MnO3 epitaxial films

The colossal negative magnetoresistance (approximately 12%) in a field of 8.4 kOe over a wide range of temperatures below the Curie point T _C ≈240 K in a single-crystal La_0.35Nd_0.35Sr_0.3MnO₃ film on a single-crystal (001)ZrO₂(Y₂O₃) wafer substrate is discussed. Isotherms of the magnetoresistance of this film reveal that its absolute value increases with the field, abruptly in the technical magnetization range and almost linearly in stronger fields. For three single-crystal films of the same composition on (001)LaAlO₃, (001)SrTiO₃, and (001)MgO substrates, colossal magnetoresistance only occurred near T _C ≈240 K and at T<T _C it increased weakly, almost linearly, with the field. In the film on a ZrO₂(Y₂O₃) substrate the electrical resistivity was almost 1.5 orders of magnitude higher than that in the other three films. It is shown that this increase is attributable to the electrical resistance of the interfaces between microregions having four types of crystallographic orientations, while the magnetoresistance in the region before technical saturation of the magnetization is attributable to tunneling of polarized carriers across these interfaces which coincide with the domain walls (in the other three films there is one type of crystallographic orientation). The reduced magnetic moment observed for all four samples, being only 46% of the pure spin value, can be attributed to the existence of magnetically disordered microregions which originate from the large thickness of the domain walls which is greater than the size of the crystallographic microregions and is of the same order as the film thickness. The colossal magnetoresistance near T _C and the low-temperature magnetoresistance in fields exceeding the technical saturation level can be attributed to the existence of strong s-d exchange which is responsible for a steep drop in the carrier mobility (holes) and their partial localization at levels near the top of the valence band. Under the action of the magnetic field the carrier mobility increases and they become delocalized from these levels.     

Localization effects in the charge density wave state [4]of the quasi-two-dimensional monophosphate tungsten bronzes {(P{O_2})_4}{(W{O_3})_{2m}}(m = 7,8,9)

The monophosphate tungsten bronzes (PO ₂ ) ₄ (WO ₃ ) _2m are quasi-two-dimensional conductors which show charge density wave type electronic instabilities. We report electrical resistivity and magnetoresistance measurements down to 0.30 K and in magnetic fields up to 16 T for the m = 7, 8 and 9 members of this family. We show that these compounds exhibit at low temperature an upturn of resistivity and field dependences of the magnetoresistance characteristic of localization effects. We discuss the dimensionality of the regime of localization as m is varied. We show that for m =7, the regime is quasi-two-dimensional and three-dimensional for m = 8, 9. Received 16 September 1999     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代,制备了La_2/3Ca_1/3Mn_1-xCo_xO₃ (0≤x≤0.15) 系列样品并研究了体系的结构和输运特性.结果表明,在替代范围内,样品呈现很好的单相结构,各晶格参数随替代量的增大而减小;Co替代导致体系出现电输运反常,具体表现为在居里温度T_C以下电阻-温度曲线的二次金属-绝缘转 关键词： Mn位替代 双峰现象 自旋结构 磁电阻效应     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

Enhancement of magnetoresistance in cobaltites by manganese substitution: the oxide La 0.8 Sr 0.2 Co 1-x Mn x O 3

The substitution of manganese for cobalt in the perovskite La _0.8 Sr _0.2 CoO ₃ has been studied. A significant increase of the magnetoresistance (MR) is obtained, reaching 60% at 5 K under 7 T for . This behavior originates from a spectacular increase of the resistivity correlated to a significant decrease of ferromagnetism by Mn doping. This enhancement of magnetoresistance can be interpreted by the growth of ferromagnetic clusters in the insulating matrix, by applying a magnetic field. Received 7 May 1999     

Ferroelectricity and structure of BaTiO3 grown on YBa 2Cu3O_{7 - \delta } thin films

We have investigated the crystal structure and the ferroelectric properties of BaTiO₃ thin films with YBa₂Cu₃O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa₂Cu₃O and BaTiO₃ were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO₃ films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm². At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant. Received 24 June 1999 and Received in final form 27 August 1999     

In situ resistivity and magnetoresistance studies of Co/Au(111) single layers and bilayers

We report here on resistance and magnetoresistance (MR) studies of ultrathin Co/Au(111) single sandwiches and bilayers with perpendicular magnetization. Resistance of the films was measured in situ in ultrahigh vacuum, during depositions and as a function of a perpendicular applied magnetic field. A large MR variation with the thickness of Au coverage was observed and compared to calculations. The coercive field of the Co films shows a drastic variation with the Au coverage thickness, which reflects the theoretical anisotropy variation. It was measured as a function of temperature. For the first time, the effect of interlayer interaction on the resistivity of a Co bilayer during the growth of Co top layer, is evidenced and compared to calculations. Finally, hysteresis loops of strongly antiferromagnetically coupled bilayers are investigated. Received 3 November 1998 and Received in final form 18 January 1999     

Transport properties of La 1 - x Ca x MnO 3 ( 0.5 ? x < 1)

The transport properties of the La_1-xCa_xMnO₃ ( 0.5 ? x < 1) system in magnetic fields up to 14 T were studied. We found that the relationship between the charge ordering temperature T _CO and Mn⁴⁺ content n _{Mn4 +} obeys the formula T _CO / T _max = 1 - a ( n _{Mn4 +} - n ₀ ) ² , here n₀ and a are constants and T _max is the maximum of T _CO . For x = 0.65, T _CO arrives at the maximum value of 249.5 K in zero magnetic field, while the charge ordered (CO) state is most stable around x = 0.75. For x = 0.5 when H < 6 T the resistivity displays Mott's variable-range hopping (VRH) behavior, when 6 < H < 12 T it is suggested that two kinds of conduction mechanism, i.e., VRH and magnetic polarons, coexist in the material, and when H > 12 T the resistivity shows metallic-like behavior and the transport mechanism is attributed to coexistence of magnetic polarons and free carriers. For x = 0.95, the conduction mechanism accords with the coexistence of VRH and magnetic polarons. Received 4 January 2002 and Received in final form 28 January 2002     

Mn-site doping induced CMR properties in calcium rich manganites Pr1‒xCaxMnO3(0.6 ≤ x ≤ 0.7)

Doping of Mn-site by chromium, cobalt and nickel has been investigated in the calcium rich manganites and . Whatever the nature of the doping element, a rapid disappearance of the charge ordered (CO) state is observed, decreasing as the doping rate increases. But the most important result concerns the Cr-doped compounds for which a re-entrant insulator to metal transition at 90-120 K is observed for x =0.10-0.12, in a zero magnetic field. The possibility to induce colossal magnetoresistance (CMR) properties for high (IV) contents ((IV)/) for x =0.07-0.12 is shown for the first time, the resistance ratios reaching at 30 K. This study also shows differently that the small size of the A-site cation (Pr, Ca) is not a redhibitory obstacle to the appearance of CMR properties in manganites, in contrast with previously established phase diagrams. Received: 18 June 1997 / Revised: 4 August 1997 / Accepted: 10 November 1997     

Response of the electrical resistivity of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>(20 nm)/LaAlO<Subscript>3</Subscript>(001) films to magnetic field and variation in temperature

The structure, electrical resistivity, and magnetotransport parameters of 20-nm-thick epitaxial La_0.67Ba_0.33MnO₃ films grown by laser ablation on LaAlO₃(001) substrates are studied. The unit cell volume V _eff = 58.80 ų of the as-grown manganite films is found to be less than that for bulk La_0.67Ba_0.33MnO₃ crystals. Maximum values of the negative magnetoresistance MR(μ₀ H = 1 T) = ?0.27 for La_0.67Ba_0.33MnO₃ films are observed at a temperature of about 225 K. For 5 < T < 100 K, the film magnetoresistance depends only weakly on temperature and is on the order of ?0.1. At temperatures below 100 K and for 3 < μ₀ H < 5 T, the electrical resistivity of the as-grown films decreases linearly with increasing magnetic field.     

Field-induced phase transitions and giant magnetoresistance in Dy D{y_3}CoCo single crystals

Electrical resistivity and calorimetric measurements on Dy ₃ Coshow that below the Néel temperature (T N =44 K) the non-collinear antiferromagnetic structure exhibits field-induced magnetic phase transitions of a first-order type along all principal axes, accompanied by a strongly anisotropic giant magnetoresistance and by a change of the Sommerfeld coefficient of the specific heat. Quantum tunnelling of the magnetization appears to be possible for T < 0.6 K. Received 15 July 1999 and Received in final form 6 December 1999