Z-scan analytical theories for characterizing multiphoton absorbers

The open-aperture Gaussian-beam Z-scan measurements for characterizing an optically thin multiphoton-absorbing material were systematically investigated. Two widely used temporal profiles of the laser pulses on Z-scan traces were considered as well. The analytical polynomial expressions of Z-scan traces were presented for a thin sample with only one nonlinear process at a time [two-, three-, four-, or five-photon absorption (2PA, 3PA, 4PA, or 5PA)] and concurrence of two different processes (e.g., 2PA and 3PA, 3PA and 4PA, or 4PA and 5PA), respectively. A simple yet highly efficient approach was presented for identifying and evaluating the simultaneous n- and (n+1)-photon absorption coefficients.     

Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors

Self-assembled monolayers are widely used to modify the gate dielectric/semiconductor interface in organic thin-film transistors. By modifying the interaction between the molecular semiconductor and the substrate, thin-film ordering and the electronic properties of the semiconducting channel can be controlled. The modified semiconductor/dielectric properties result in macroscopically observed changes in the charge-carrier mobilities, threshold voltages, subthreshold swing and transfer characteristic hysteresis. The latter two are determined by the density of charge-trapping states at the interface. Here, we investigate the influence of the thickness of the self-assembled monolayer, via the alkyl chain length in n-alkyl phosphonic acid-based monolayers on SiO₂, on the electronic properties of pentacene-based organic thin-film transistors. Rather than a monotonic increase or decrease in performance with increasing chain length, we have found that the optimum performance occurs with chains of 8–10 carbon atoms. Atomic force microscopy shows a correlation between pentacene crystalline grain size and transistor performance.     

High-efficiency,high-speed VCSELs for optical interconnects

High-efficiency, high-speed, tapered-oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) emitting at 980 nm have been demonstrated. By carefully engineering the tapered oxide aperture, the mode volume can be greatly reduced without adding much optical scattering loss for the device sizes of interest. Consequently, these devices can achieve higher bandwidth at lower current and power dissipation. In addition, the parasitics are reduced by implementing deep oxidation layers and an improved p-doping scheme in the top mirror. Our devices show modulation bandwidth exceeding 20 GHz, a record for 980 nm VCSELs. Moreover, 35 Gb/s operation has been achieved at only 10 mW power dissipation. This corresponds to a data-rate/power-dissipation ratio of 3.5 Gbps/mW. Most importantly, our device structure is compatible with existing manufacturing processes and can be easily manufactured in large volume making them attractive for optical interconnects.     

Possible interpretation of the „anomalous“ behaviour of the proton spectrum at 0° from the deuteron fragmentation at 9 GeV/c

The momentum spectra of protons, produced at 0° as a result of fragmentation of relativistic deuterons on nuclei, are analyzed. Possible causes of the existing discrepancy of the data on the 0° proton spectrum from the¹ H(d,p)X reaction at 9.1 GeV/c with results of the impulse approximation calculations are considered. It is shown that taking into account the finite angular resolution of the experimental setup and the corresponding renormalization of the experimental data, on the one hand, and also the inclusion of the additional (to stripping) contribution of protons from the scattering of deuteron nucleons by target protons, on the other, make it possible to match these data with the results of calculations within the framework of the relativistic impulse approximation using the deuteron wave function for the Paris potential.     

Characteristics of holographic scattering and its application in determining kinetic parameters in PQ-PMMA photopolymer

This paper characterizes holographic scattering and demonstrates its application in determining the kinetic parameters in materials with high transmittance and strong holographic scattering like phenanthrenequinone doped poly (methyl methacrylate) (PQ-PMMA). We define a polymerization rate parameter which can be determined by the temporal evolution of the scattering losses. Two basic kinetic parameters, quantum yield and molar-absorption coefficient, are obtained by nonlinear fitting the curve of the polymerization rate parameter as a function of the thickness, which are 1.9×10⁻⁶ mol/einstein and 2.1×10⁴ cm²/mol for a wavelength of 532 nm respectively. These results improve the understanding of photochemical behaviors and allow us to describe the grating formation in the photopolymer reasonably.     

Light-particle emission versus evaporation residue formation in collisions of40Ar onnatCa at 30 MeV/u

The closely associated phenomena of preequilibrium emission and evaporation residue formation in fusion-like reactions were studied in central collisions between⁴⁰Ar and^natCa at 30 MeV/u. Heavy reaction products were taken in coincidence with neutrons and light charged particles. The preequilibrium neutron data agree very well with predictions of a quantal phase-space model which, in addition to the mean field, takes two-body collisions properly into account. Preequilibrium emission ends in thermally equilibrated hot nuclei with an average excitation energy of about 6 MeV/u. The combined results show a striking interrelation between the missing mass and light-particle multiplicities: the mass difference between the full compound mass and the observed residues can be explained quantitatively by the emission of only neutrons and light charged particles withZ2 during the entire course of energy dissipation.Supported by the German Bundesministerium für Forschung und Technologie (BMFT) under contract 06 HD 983I     

Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Silicon films were deposited at moderate substrate temperatures (280–500° C) from pure silane and a silane-hydrogen mixture (10% SiH₄, 90% H₂) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3–1 m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.     

DLC coating of textile blood vessels using PLD

Textile blood vessels with a length of 30 cm were coated with amorphous diamond-like carbon (DLC) layers with thicknesses up to 200 nm. The layers were created by pulsed laser deposition in vacuum or argon ambient. The percentage of sp³ carbon was evaluated using X-ray photoelectron spectroscopy, X-ray excited Auger electron spectroscopy and Raman spectroscopy. Depending on the deposition conditions the sp³ content varied from ∼40% to 60%. The adhesion of the DLC layers to the textile vessels was checked. The preliminary biocompatibility results from in vivo tests with sheep are also given.     

Time-resolved,stress-induced,and anisotropic phase transformation of a piezoelectric polymer

We investigate the time-dependent and anisotropic phase transformation of poly (vinylidene difluoride) (PVDF) under bending. Using combined techniques of an atomic force microscope and a Fourier transform infrared spectroscope, observation of surface morphology and phase transformation in time was made. Results showed that bending stress induces the transformation of amorphous, α,β, and γ crystalline phases. Specifically, the amorphous phase was transformed into the β phase when the bending force was applied. In addition, the transformation observed was time and direction dependent. The anisotropic behavior observed brings insights into the origin of the piezoelectricity of PVDF.     

Upconversion due to energy transfer involving Pr<Superscript>3+</Superscript> ions in pairs

Upconversion luminescence in triply ionized praseodymium-doped TeO₂–Li₂O glass using excitation at ∼590 nm into the ¹D₂ level from a dye laser pumped with the second harmonic of a pulsed Nd:YAG laser has been reported. The mechanism involved in the upconversion emission observed at ∼480 nm indicates that the most important contribution is energy transfer among praseodymium ions in pairs followed by the dipole–dipole interaction. The rate-equation model for the emission at ∼480 nm that provides direct information to determine the energy-transfer rates containing the pair of states involved in the upconversion process has been explored.     

Enhanced sensitivity of Z-scan technique by use of flat-topped beam

Based on the Huygens–Fresnel diffraction integral method, we report a theoretical investigation on the closed-aperture Z-scan technique by using the flat-topped beam. The sensitivity of the flat-topped beam Z-scan technique, which can be enhanced with the increase of the flatness order N for the flat-topped beam, is greatly higher than of the Gaussian beam. Some salient characteristics of the flat-topped beam Z-scan traces are addressed. The flat-topped beam Z-scan technique for characterizing the instantaneous nonlinearity is also presented.     

Self-grown fiber fabrication by two-photon photopolymerization

We demonstrate a new fiber growth mechanism in a photocurable resin by ultrafast laser illumination. A high-repetition rate (∼1 MHz) ultrafast laser beam at the wavelength of ∼523 nm was focused into an ultraviolet photocurable resin to trigger two-photon photopolymerization process. Time-resolved shadowgraphs and scattered light imaging revealed that the curing commenced in the neighborhood of the geometric focal point of the laser beam and that the fiber growth progressed mostly towards the laser source. The cured fiber was thinner and longer than the profile of the focused laser beam, facilitated by nonlinear propagation and absorption of the ultra-fast laser beam. The achieved aspect ratio of the fiber was higher than 180 with ∼10 μm mean diameter, and the average growth rate was up to ∼2 mm/s.     

Design of sharp transmission filters using band-edge resonances in one-dimensional photonic crystal hetero-structures

This paper presents a design of sharp transmission filters using band edge resonance effects in a hetero-structure composed of one-dimensional photonic crystals with different periods. Assuming that the photonic crystals are made of identical pairs of transparent materials, the band-edge resonance occurs when the periods are distributed in a geometrical progression with a common ratio, r=r _c , where r _c is a known function of refractive-index modulation, incident angle and the polarization of light. The band-edge resonance results in sharp resonant peaks in the transmission spectrum, with the full width at half maximum of the peaks increasing with an increase in the number of unit cells in each photonic crystal. Furthermore, if M photonic crystals are used to construct the hetero-structure, M−1 resonant peaks with the spacing between kth (1<k<M) and (k−1)th peaks equal to the band gap of the kth photonic crystal form in the transmission spectrum.     

Influence of oxygen depletion layer on the properties of tin oxide gas-sensing films fabricated by atomic layer deposition

In this paper we report on the influence of film thickness on the electrical and gas-sensing properties of tin oxide thin films grown by atomic layer deposition (ALD) technique. The nature of the carrier and post-flow gases used in ALD was found to have a dramatic influence on the electrical conductance of the deposited films. Up to a film thickness of 50 nm the sheet conductance of the films increased with the thickness, and above 50 nm the sheet conductance was not significantly influenced by the film thickness. This effect was attributed to oxygen depletion at the film surface. When the depth of oxygen depletion (d _dep) was greater than or equal to the film thickness (t), the sheet conductance was thickness dependant. On the other hand, when d _dep≤t, the sheet conductance was independent of the film thickness but depended on the depth of the oxygen depletion. This proposed explanation was verified by subjecting the films to different lengths of post-annealing in an oxygen depleted atmosphere. Gas-sensing functionality of the films with various thicknesses was examined. It was observed that the film thickness had a significant influence on the gas-sensing property of the films. When the thickness was greater than 40 nm, the sensitivity of the films to ethanol was found to follow the widely reported trend, i.e., the sensitivity decreases when the film thickness increases. Below the film thickness of 40 nm the sensitivity decreases as film thickness decreases, and we propose a model to explain this observation based on the increase in resistance due to multiple grain boundaries.     

TiO<Subscript>2</Subscript> microstructures by inversion of macroporous silicon using atomic layer deposition

An approach is presented which is capable of fabricating arbitrarily shaped three-dimensional microstructures. Two methods—namely, macroporous silicon and atomic layer deposition—are combined to realize structures in the micrometer and submicrometer range. Using TiO₂ as an example, the fabrication of single hollow objects as well as complex network structures is shown. The scalability and the wide range of applicable materials are the key points of this method for future applications.     

Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films

Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80–380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott’s parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature region. Photoconductivity of the PANI-BPS35 composite films having 10, 20, and 40 weight percent conductive filler under various illumination intensities was also studied. Photocurrent of the composite films increased with increasing both polyaniline weight fraction and temperature. Finally, the effect of doping on both electrical conductivity and the photoconductivity of the composite films was investigated.     

Influence of the plasma parameters on the properties of aluminum oxide thin films deposited by laser ablation

The plasma produced by the ablation of a high purity Al₂O₃ target, using the fundamental line (1064 nm) of a Nd:YAG laser, was characterized. The laser fluence was varied in order to study its effect on the characteristics of the produced plasma as well as on the properties of the material deposited. Optical emission spectroscopy (OES) was used to determine the type of excited species present in the plasma. The mean kinetic energy of the ions and the maximum plasma density were determined from the time of flight (TOF) curves, obtained with a planar Langmuir probe. The obtained results reveal that the fast peak in the probe curve could be attributed to Al III, while the slow peak corresponds to the Al II. Aluminum oxide thin films were then deposited under the same conditions of the diagnosed plasma, in an attempt to correlate the plasma parameters with the properties of the deposited material. It was found that when Al II ion energies are lower than 461.0 eV the films deposited have structural characteristics similar to that of α-Al₂O₃, whereas at ion energies greater than 461.0 eV amorphous material was obtained.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Structural properties of high-quality sputtered Fe films on Al2O3(1120) and MgO(001) substrates

High-quality thin Fe films were deposited on MgO(001) and Al₂O₃(1120) substrates in the thickness range from 7 to 50 nm. The structural properties have been studied by out-of-plane and in-plane X-ray scattering experiments. From the out-of-plane measurements the electron density profile was determined together with interface and surface roughness parameters. Fe on Al₂O₃ grows along the [110]-direction with a structural coherence length comprising about the total film thick ness and a very small mosaicity. From in-plane scattering experiments a three-domain structure was observed. On MgO(001) substrates Fe grows in the [001]-direction, with the Fe [100]-axis parallel to the MgO [110]-axis. On both substrates, the Fe films exhibit a very small surface and interface roughness, indicative for a high quality of the sputtered samples.