Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields

We present a theoretical and experimental study of electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields. Results are based on an 8-band Pidgeon–Brown model generalized to include finite k_z effects and s(p)–d exchange interaction between itinerant carriers and Mn d-electrons. The e-active transitions in the valence band in p-doped samples take place due to the nature of multiple valence bands (heavy and light holes). We have calculated the absorption spectra in high magnetic fields and identified optical transitions which contribute to the cyclotron resonance for both e-active and h-active polarizations. Calculations show agreement with experimental results.     

Spin splitting in HgTe/CdHgTe (013) quantum well heterostructures

The electron transport and cyclotron resonance in a one-sided selectively doped HgTe/CdHgTe (013) heterostructure with a 15-nm quantum well with an inverted band structure have been investigated. The modulation of the Shubnikov-de Haas oscillations has been observed, and the spin splitting in zero magnetic field has been found to be about 30 meV. A large Δm _c/m _c ≃ 0.12 splitting of the cyclotron resonance line has been discovered and shown to be due to both the spin splitting and the strong nonparabolicity of the dispersion relation in the conduction band.     

电子回旋共振等离子体增强沉积氟化非晶碳薄膜的光学性质

用紫外可见光透射光谱(UV-VIS)并结合键结构的X射线光电子能谱(XPS)和红外谱(FTIR)分析,研究了电子回旋共振等离子体增强化学气相沉积法制备的氟化非晶碳薄膜的光吸收和光学带隙性质.在微波功率为140—700W、源气体CHF₃∶C₆H₆比例为1∶1—10∶1条件下沉积的薄膜,光学带隙在1.76—2.85eV之间.薄膜中氟的引入对吸收边和光学带隙产生较大的影响,吸收边随氟含量的提高而增大,光学带隙则主要取决于CF键的含量,是由于强电负 关键词： 氟化非晶碳薄膜 光吸收与光学带隙 电子回旋共振等离子体     

Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures

The energy spectra of quantum-well narrow-bandgap Hg_{1 ? y} Cd _y Te/Cd _x Hg_{1 ? x} Te heterostructures have been studied. The dependences of the effective cyclotron mass on the density (in classical magnetic fields) and the transition energy (in quantizing fields) have been obtained from the cyclotron resonance measurements. These dependences confirm the near-linear dispersion law for the electrons with small mass at the band bottom (the minimum cyclotron mass measured is 0.003 m ₀). The interband photoconductivity of the CdHgTe-based structures with the long-wavelength photoresponse edge lower than 6 meV has been demonstrated.     

Optical phonon assisted cyclotron harmonic transitions in p-InSb

The observation of optical-phonon induced cyclotron resonance harmonics in the valence band of InSb is reported. A photoconductivity technique was applied, using a CO₂ laser and magnetic fields up to 15 T. The observed resonances are well described by a corrected Pidgeon-Brown model calculation which is also consistent with experimentally observed magneto-optical intra-conduction and interband transitions.     

Germanium lasers in the range from far-infra red to millimetre waves

Recent experimental and theoretical achievements are reviewed on three types of laser oscillation inp-type germanium; the intervalence band (IVB) laser oscillation due to transitions between the light-hole band and the heavy-hole band, the light-hole cyclotron resonance (LHCR) laser oscillation, and the heavy hole cyclotron resonance (HHCR) maser oscillation. Described for the IVB oscillation are fundamental characteristics (such as the wavelength range of oscillation and the cooperation with higherharmonic cyclotron resonances), the polarization characteristics of radiation and influence of uniaxial stress on the oscillation. The present status of the attempt at single line oscillation is also described. As for the LHCR oscillation, the formation of population inversion and the amplification are explained on the basis of quantum mechanical calculations of the valence bands in crossed electric and magnetic fields.     

X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system

A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical temperature T _c and the second critical magnetic field H _c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting transition at T _c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another. Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999)     

Saturation spectroscopy of electronic states in a magnetic field in InAs/AlxGa1−xSb single quantum wells

We have carried out saturation spectroscopy of cyclotron resonance in a semiconducting InAs/Al_0.5Ga_0.5Sb single quantum well using the UCSB free electron laser and have extracted an effective Landau level lifetime using an n-level rate equation model. The effective lifetime shows strong oscillations (>an order of magnitude) with frequency. Minima are shifted to higher frequencies than those given by the simple parabolic magnetophonon resonance condition due to large nonparabolicity in the InAs conduction band. We have also used this technique to investigate the origins of two lines: the X-line and cyclotron resonance in a “semimetallic” InAs/Al_0.1Ga_0.9Sb single quantum-well structure. Results show that the two lines are of different origin.     

Submillimeter wave induced resistance oscillations in ultra-high mobility two-dimensional electron systems

Submillimeter wave induced resistance oscillations in two ultra-high mobility GaAs/Al_0.24Ga_0.76As quantum well samples have been investigated by means of a backward wave oscillator and far-infrared laser at ³He temperatures. Subnikov–de Haas oscillation, submillimeter wave induced resistance oscillation, and magnetoplasmon resonance occur simultaneously in this frequency regime. The primary radiation induced resistance minimum shifts toward cyclotron resonance with increasing radiation frequency. The positions of these minima agree well with those of the magnetoplasmon resonance. The higher-order harmonics of the resistance oscillation remain around the multiples of the cyclotron resonance frequency. An in situ transmission measurement exhibits an asymmetric broadening of the cyclotron resonance, appearing as a combination of the cyclotron resonance and the magnetoplasmon resonance, but no features directly linked to the microwave induced resistance oscillation can be seen.     

Octupolar excitation of ion motion in a penning trap

The excitation of the motion of ions in a Penning trap at twice their cyclotron frequency, 2ν _c , by means of an azimuthal octupolar RF field has been studied with the LEBIT facility at the NSCL. The possibility of such an RF octupolar excitation has been verified. Compared to ion excitation at ν _c by means of quadrupolar fields an increased resolving power is observed in the cyclotron resonance curves, which may have important implications for Penning trap mass measurements. Numerical simulations have been used to characterize important properties of this type of excitation in detail and to predict the behavior of the ion motion under realistic conditions. Good agreement with the experimental results is observed.      

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

We report the first resonant electronic Raman spectroscopy study of discrete electronic transitions within small p-doped self-assembled Si/Ge quantum dots (QDs). A heavy hole (hh) to light hole (lh) Raman transition with a dispersionless energy of 105 meV and a resonance energy of the hh states to virtually localised electrons at the direct band gap of 2.5 eV are observed. The hh–lh transition energy shifts to lower values with increasing annealing temperature due to significant intermixing of Si and Ge in the QDs. Structural parameters of the small Si/Ge dots have been determined and introduced into 6-band k·p valence band structure calculations. Both the value of the electronic Raman transition of localised holes as well as the resonance energy at the E₀ gap are in excellent agreement with the calculations.     

Landau-level lifetimes in PbTe nipi superlattices, PbTe/PbEuTe and InAs/AlSb quantum wells

Landau-level lifetimes are determined from saturation cyclotron resonance (CR) in wide parabolic wells, quantum wells and bulk PbTe–Pb_1−xEu_xTe systems. These narrow gap structures exhibit strong band non-parabolicity necessary to terminate the normally equi-spaced Landau-level ladder. It was not possible to saturate the bulk sample, but short lifetimes, of between 1.5 and 8 ps, were obtained for the wide parabolic well and the quantum well, respectively, utilising a multi-level rate equation model. We also report the first pump–probe cyclotron resonance result in an InAs–AlSb quantum structure. The pump–probe experiment provides a direct determination of the lifetime, giving τ=40 ps in this InAs–AlSb sample. This shows good agreement with an 8×8k·p calculation.     

应变Si价带色散关系模型

基于K.P理论框架,通过引入应变哈密顿微扰项,详细推导并建立了应变Si的价带色散关系模型.所得模型适用于任意晶向弛豫Si_1－xGe_x(0≤x≤0.6)衬底上生长的应变Si,并且,通过该模型可以获取任意K矢方向的应变Si价带结构及空穴有效质量,对器件研究设计可提供有价值的参考. 关键词： 应变Si K.P理论 色散关系     

Disordering of the electronic structure of YBaCuO amorphous films upon incorporation of crystalline clusters formed in laser-induced plasma into their composition

The effect of crystalline clusters formed in a laser-induced plasma on the optical properties of YBa₂Cu₃O_{6 + x} amorphous films prepared by pulsed laser deposition has been investigated. It has been demonstrated that an increase in the number of clusters leads to a gradual disappearance of interference fringes inherent in optically homogeneous media. Simultaneously, the incorporation of metallic and insulating clusters into the amorphous medium results in a decrease in the optical band gap E ₀ of the YBaCuO amorphous matrix from 1.28 to 1.06 eV and a considerable decrease in the probability of interband optical transitions with charge transfer O 2p → Cu 3d due to the loosening of the structure and generation of local stresses. It has been revealed that there is an additional band gap E ₁, which decreases from 0.25–0.30 eV to zero values with a decrease in the optical band gap E ₀. The additional gap has been interpreted as an energy gap between localized states that belong to the valence and conduction bands. A decrease in the density of electronic states in the narrow 3d band leads to the overlap of tails of the density of states, so that the band gap E ₁ becomes negative.     

Analysis of the ν 3, ν 6, ν7 + ν 8 Fermi and Coriolis interacting band system in methyl cyanide

A reinvestigation of the Fermi and Coriolis interacting band system ν ₃, ν ₆, ν ₇ + ν ₈ of methyl cyanide has been performed with a resolution better than 0·3 cm^-1. The observed J structure in some of the K sub-bands enables an unambiguous numbering of the sub-band Q branches to be made. The resulting assignment, which differs from Amat and Nielsen's previous assignment, is used to re-analyse the band system. A band contour has been calculated by computer simulation, including the effects of both the Fermi resonance of ν ₆ with ν ₇ + ν ₈ and the Coriolis resonance of ν ₆ with ν ₃; both the frequency and intensity perturbations which result have been accurately reproduced. The molecular parameters obtained from our analysis are summarized in table 2.     

Cyclotron masses in n-GaAs/Ga 1−xAl xAs heterojunctions

Electron cyclotron resonance is studied in single layer GaAs/Ga _1−xAl _xAs heterostructures. The cyclotron mass is measured over a wide range of the two-dimensional electron density N _s and the magnetic field strength B to enable detailed comparison with self-consistent theoretical results that take into account the effects of band nonparabolicity. The calculations are performed using an effective 2 × 2 subband Hamiltonian, which is derived from a five-level k·p-model by fourth order perturbation theory and includes remote band contributions. Close agreement between experimental and theoretical cyclotron masses is achieved and the importance of band nonparabolicity in these systems is demonstrated.     

Angle-resolved resonant photoemission of Ni(100) and Ni(110) single crystals

We have studied the valence band photoemission spectra of Ni(100) and Ni(110) single crystals near the excitation threshold for 3p core electrons. The resonant behavior of the 6 eV satellite does not depend on both the surface orientation and the polarization of the electric vector of an incident light for excitation. These results indicate that the 6 eV satellite should be under little influence of spatial symmetry of the valence band. In the angle-resolved photoemission spectra of Ni(100), we have observed another broad feature near the 6 eV satellite. It shows the large energy dispersion and is interpreted as due to the interband transition. In Ni(110), we have observed the weak valence band satellites at binding energies of about 9.3 eV and 13.4 eV. They do not show well-defined resonance around the 3p threshold.     

The contribution of Fermi resonance to the formation of the Raman valence band of water

We study the role of Fermi resonance in the formation of the valence band of Raman scattering of light by liquid water molecules. We experimentally study the Raman valence and bending bands of water under changes in temperature from 20 to 99°C and in concentrations of D₂O and KI, KBr, KCl and KF salts in the range of their full solubility. We propose and implement a method for calculating the interaction constant of Fermi resonance in water. Use of genetic algorithms together with variational methods has made it possible to increase the accuracy in calculating the interaction constant of Fermi resonance and for the first time to quantitatively estimate the contribution of resonance and the intensity of the Raman valence band of water.     

Electronic structure of cubic uranium compounds

Self-consistent cellular multiple scattering techniques and photoemission energy distribution curves obtained at 20<hv<80 eV are used to study the density of states of UN and US. The calculations are based on a model using a finite cluster of atoms in a condensed-matter-like boundary potential. The main results refer to the mixing of thes, p, d, andf-states of uranium into a valence and a conduction band. Thef-states form orbitals with the ligands, within the valence and conduction bands. In the nitride the amount off character in the valence band is only 0.3 electrons and thef electrons are in two resonant levels (of each spin) in the conduction band. Only the first of these levels is occupied for the local, alternate from atom to atom, majority spin. In the sulfide the amount off character in the valence band is 0.59 electrons and the rest of thef-levels are in a resonance state (of majority spin) at the beginning of the conduction band. The conduction band is mainly of localized uranium 6d character. The theoretical results compare favorably with the photoemission data reported here.     

Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs

Large resonance enhancements in the inelastic light scattering intensities involving free carriers have been measured at the E₀ + Δ₀ energy gap of n-GaAs.Results for spin-flip single particle excitations are well described as unscreened intraband scattering involving the Γ₇ valence band as intermediate state. The resonance of the longitudinal plasmon-phonon coupled modes indicates the contribution of other so far not fully identified processes.