Efficient Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under diode pumping into the emitting level

We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

All-solid-state intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> green laser under direct 880 nm pumping

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1064 nm Nd:Y_0.36Gd_0.64VO₄ laser under in-band diode pumping at 880 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.92 W of CW output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 16.4%, and the fluctuation of the green output power was better than 2.5% in the given 30 min.     

CW Nd:LuVO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under direct 888 nm pumping

We report a red laser at 672 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1343 nm Nd:LuVO₄ laser under in-band diode pumping at 888 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.73 W of CW output power at 672 nm is achieved. The optical-to-optical conversion efficiency is up to 9.7%, and the fluctuation of the red output power was better than 3.3% in the given 30 min.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Magnetic and thermal properties of single-crystal NdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The neodymium ferroborate NdFe₃(BO₃)₄ undergoes an antiferromagnetic transition at T _N = 30 K, which manifests itself as a λ-type anomaly in the temperature dependence of the specific heat C and as inflection points in the temperature dependences of the magnetic susceptibility χ measured at various directions of an applied magnetic field with respect to the crystallographic axes of the sample. Magnetic ordering occurs only in the subsystem of Fe³⁺ ions, whereas the subsystem of Nd³⁺ ions remains polarized by the magnetic field of the iron subsystem. A change in the population of the levels of the ground Kramers doublet of neodymium ions manifests itself as Schottky-type anomalies in the C(T) and χ(T) dependences at low temperatures. At low temperatures, the magnetic properties of single-crystal NdFe₃(BO₃)₄ are substantially anisotropic, which is determined by the anisotropic contribution of the rare-earth subsystem to the magnetization. The experimental data obtained are used to propose a model for the magnetic structure of NdFe₃(BO₃)₄.     

Luminescence in Dy<Superscript>3+</Superscript> and Eu<Superscript>3+</Superscript> Activated K<Subscript>3</Subscript>Al<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>

The Dy³⁺ and Eu³⁺ activated K₃Al₂ (PO₄)₃ phosphors were prepared by a combustion synthesis. From a powder X-ray diffraction (XRD) analysis the formation of K₃Al₂ (PO₄)₃ was confirmed. In the photoluminescence emission spectra, the K₃Al₂(PO₄)₃:Dy³⁺ phosphor emits two distinctive colors: blue and yellow whereas K₃Al₂(PO₄)₃:Eu³⁺ emits red color. Thus the combination of colors gives BYR (blue–yellow–red) emissions can produce white light. These phosphors exhibit a strong absorption between 340 and 400 nm which suggest that present phosphor is a promising candidate for producing white light-emitting diodes (LED).     

Vibrational spectra of disordered oxyfluoride (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>WO<Subscript>3</Subscript>F<Subscript>3</Subscript>

Comparative analysis of the IR absorption and Raman scattering spectra of a polycrystalline sample of perovskite-type oxyfluoride (NH₄)₃WO₃F₃ has been performed in the frequency range 370–4000 cm^?1 at temperatures from 92 to 303 K, including the transition between the orientationally disordered cubic and low-symmetry phases. The conformation of WO₃F₃ octahedral groups is established and transitional anomalies of the internal modes of these groups and ammonium ions are revealed. Comparative analysis of the IR and Raman spectra suggests that the phase transition under study is mainly related to the ordering of octahedral groups and formation of W-O…H-N hydrogen bonds.     

Magnetic and electric properties of Eu<Subscript>0.62</Subscript>Bi<Subscript>0.38</Subscript>MnO<Subscript>3</Subscript> and Eu<Subscript>0.53</Subscript>Bi<Subscript>0.32</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> crystals

Single crystals of Eu_0.62Bi_0.38MnO₃ and Eu_0.53Bi_0.32Sr_0.15MnO₃ solid solutions crystallizing in an orthorhombically distorted perovskite structure were prepared. At temperatures above 120 K, Eu_0.62Bi_0.38MnO₃ exhibits the properties of structural glass while remaining a dielectric at all temperatures. There is no long-range magnetic order in this compound. Eu_0.53Bi_0.32Sr_0.15MnO₃ behaves as a semiconductor above 120 K and exhibits a jump in conductivity at T = 175 K associated with a metal-insulator transition occurring within limited regions of the crystal. In these regions, there appears a ferromagnetic moment (due to double exchange mediated by charge carriers) and local electric polarization.     

On electrochemistry of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-coated LiCoO<Subscript>2</Subscript> composite cathode with improved cycle stability

LiCoO₂-based cathode does still have a powerful competition in high-end mobile electronics due to its relatively high true density (about 5.2 g/cm³). When the operation potential range is extended, the improvement in its cycle stability has attracted more attention. The extension of its operation potential can be realized by partial replacement of Co by Ni and Mn or by surface modification. However, Ni and Mn replacing partial Co results in decreased true density; for example, the true density of LiNi_0.5Mn_0.3Co_0.2O₂ is about 4.6 g/cm³. In this case, the increase in its practical energy density is impossible. As a result, the surface modification technology becomes very important to extend its operation potential range. In this article, an Al₂O₃-coated LiCoO₂ cathode was synthesized. X-ray diffraction test did not show any impurity. Scanning electron spectroscopy measurements showed that the basic microstructure of pristine LiCoO₂ grain is sustained after coating Al₂O₃. The surface characteristic of pure and Al₂O₃-coated LiCoO₂ was also analyzed using an X-ray photoelectron spectroscopy (XPS) technique. Unusual XPS peaks of O 1s, Al 2p, and Co 2p binding energy were found and may be caused by the possible H existence in crystal structure. The electrochemical behavior was systematically investigated, and the cathode was cycled at different charge cutoff voltages (4.30～4.60 V). The charge-discharge and cyclic voltammetry measurements showed an obviously improved cyclic performance after coating Al₂O₃. The electrocatalytic activity is not clearly changed before and after coating Al₂O₃. From our systematical investigation, it could be concluded that the Al₂O₃-coated LiCoO₂ cathode is suitable for practical application in the potential range of 3.70～4.50 V vs. Li/Li⁺.     

Thermodynamic properties and structure of oxyfluorides Rb<Subscript>2</Subscript>KMoO<Subscript>3</Subscript>F<Subscript>3</Subscript> and K<Subscript>2</Subscript>NaMoO<Subscript>3</Subscript>F<Subscript>3</Subscript>

According to the results of calorimetric and structural studies, the Fm{ie1202-1}m phase in K₂NaMoO₃F₃ remains stable at least to 100 K. No ferroelectric transformation assumed earlier has been revealed in a series of Rb₂KMoO₃F₃ samples prepared using various technologies. Only a phase transition of nonferroelectric origin has been observed near 195 K, and its thermodynamic characteristics have been determined. An analysis of the stability of the cubic structure of molybdenum fluorine-oxygen elpasolites-cryolites has been performed in the framework of the hypothesis on strengths of interatomic bonds. The barocaloric effect in Rb₂KMoO₃F₃ has been estimated.     

Quasi-two-dimensional ferroelectricity in KNbO<Subscript>3</Subscript>/KTaO<Subscript>3</Subscript> superlattices

First-principles density functional theory is used to calculate the phonon spectrum in the paraelectric phase, the ground-state structure and polarization distribution in the polar phase, and energies of ferro- and antiferroelectrically ordered phases of free-standing (KNbO₃)₁(KTaO₃) _n ferroelectric superlattices with n = 1–7. It is established that quasi-two-dimensional ferroelectricity with polarization oriented in the layer plane, which weakly interacts with polarization in neighboring layers, appears in potassium niobate layers with a thickness of one unit cell in the superlattices. The possibility of using of such ferroelectric superlattices as a medium for three-dimensional information recording is shown.     

Synthesis and magnetic properties of FeNi<Subscript>3</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> core-shell nanocomposites

In this study, FeNi₃/Al₂O₃ core-shell nanocomposites, where individual FeNi₃ nanoparticles were coated with a thin layer of alumina, were fabricated by a modified sol-gel method. Several physical characterizations were performed on the samples of FeNi₃/Al₂O₃ nanocomposites with different thickness of Al₂O₃ shell. The encapsulation of FeNi₃ nanoparticles with alumina stops FeNi₃ agglomeration during heat treatment, and prevents interaction among the closely spaced magnetic FeNi₃ nanoparticles. The Al₂O₃ insulating shell improves the soft magnetic properties of FeNi₃. The study of the complex permeability of the samples shows that the real part μ’ of the permeability of the sample with Al molar content of 20% (Al/(Fe+Ni)) is as high as 12, and independent of frequency up to at least 1 GHz. The tunneling magnetoresistance arising from the presence of the Al₂O₃ shell have also been studied.     

Gas sensor based on nanosize In<Subscript>2</Subscript>O<Subscript>3</Subscript>:Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> film

Nanosize films of In₂O₃:Ga₂O₃ (96:4 weight %) have been deposited on a glassceramic substrate by the method of rf magnetron sputtering. The surfaces of fabricated films were studied with use of a scanning electron microscope; sizes of grains were determined and the thicknesses of films were measured. In order to prepare a gas-sensitive structure, a thin catalytic palladium layer and ohmic comb contacts were deposited on the In₂O₃:Ga₂O₃ film surface by the method of ion-plasma sputtering. The sensitivity of sensors based on the glassceramic/In₂O₃:Ga₂O₃ (96:4 weight %)/Pd structure to different concentrations of propane and butane gas mixture, as well as to methane was investigated at temperatures of working substance from 250 to 300°C.     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

Three types of photomagnetic effects in Sp<Subscript>3</Subscript>Cr(C<Subscript>2</Subscript>O<Subscript>4</Subscript>)<Subscript>3</Subscript> crystals

Three different photomagnetic effects caused by ultraviolet light in paramagnetic crystals based on molecules of spiropyrans (Sp) Sp₃Cr(C₂O₄)₃ and SpI have been revealed and separated: (1) in the high-temperature range (30–300 K), the photomagnetic effect in Sp₃Cr(C₂O₄)₃ is determined by the charge transfer between chromium ions and spiropyran molecules; (2) in the low-temperature range (2 K), the photomagnetic effect in Sp₃Cr(C₂O₄)₃ is due to the photoisomerization of spiropyran molecules, the change in the crystal field, and the splitting of the levels of Cr³⁺ ions in zero field; and (3) in the temperature range 2–20 K, the generation of radiation-induced paramagnetic defects contributes to the magnetic moment of the organic sublattice Sp⁺.     

Photoaccumulating film systems based on TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript> and TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript>:V<Subscript>2</Subscript>O<Subscript>5</Subscript> nanoheterostructures

The thin-film photocatalysts TiO₂/MoO₃ and TiO₂/MoO₃:V₂O₅ obtained by a combination of sol–gel and sintering techniques were studied using the photooxidation of probing dyes, EPR spectroscopy, X-ray diffraction analysis, and electron microscopy. It was shown that due to charge accumulation caused by UV irradiation, these photocatalysts retain their oxidative activity and ability for self-sterilization in the dark for a long time after irradiation was terminated (up to 5 h for TiO₂/MoO₃:V₂O₅).     

Comparative spectroscopic and laser properties of Yb<Superscript>3+</Superscript>-doped CaF<Subscript>2</Subscript>, SrF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> single crystals

We present the spectroscopic properties and room-temperature cw tunable laser operation of Yb³⁺-doped CaF₂, SrF₂ and BaF₂ single crystals grown and studied in the same conditions. Emission cross sections, lifetimes, laser thresholds, laser slope efficiencies and laser wavelength tuning ranges are compared. It appears that Yb³⁺-doped BaF₂ might be more promising for diode-pumped high power laser operation. PACS 42.55.Rz; 42.70.Hj     

Probing the isomer,fluorination and bond effects in C<Subscript>3</Subscript>H<Subscript>6</Subscript>, cyclo-C<Subscript>3</Subscript>H<Subscript>6</Subscript> and C<Subscript>3</Subscript>F<Subscript>6</Subscript> molecules using electron impact

We have carried out experimental and theoretical studies on electron scattering from the C₃H₆ isomers and C₃F₆ molecules and we report on total, differential as well as theoretical integral elastic cross-sections for these molecules. Vibrational excitation functions are also presented for the typical vibrational peaks in C₃H₆ and cyclo-C₃H₆ for the angle of 90^○, impact energy range of 1–16 eV and loss energies of 0.12 eV and 0.13 eV, respectively. In the cross-sections, clear differences in peak positions and magnitudes between the C₃H₆ isomers can be viewed as the isomer effect. The same is observed between C₃H₆ and C₃F₆ in a clear manifestation of the fluorination effect. The resemblance of the π^* shape resonance in the cross-sections, observed at about 2.2 eV for C₃H₆ and 3.5 eV for C₃F₆, to those in C₂H₄ and C₂F₄ clearly points to the effect of the double bond in the molecular structures for these molecules. Theoretical analysis is performed to provide rationales for the scattering dynamics.     

Nanosecond photoelectric effects in all-oxide p-n junction of La<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>MnO<Subscript>3</Subscript>/SrNb<Subscript>0.01</Subscript>Ti<Subscript>0.99</Subscript>O<Subscript>3</Subscript>

Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La_0.9Sr_0.1MnO₃ thin film in the p-n junction was irradiated by a laser of ≈20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/MJ for a 308 nm laser pulse.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.