Binary optics and confocal imaging

The use of two-level phase masks or spatial light modulators in confocal imaging systems is considered. It is shown how, although such masks can modify or correct the effective point-spread function of a system, their behavior for planar objects may not be as desired as a result of phase-wrapping effects. Overcoming this problem with a multilevel mask or a pair of two-level masks is discussed.     

Three-dimensional key in a modified joint transform correlator encryption scheme

We propose a modified encryption joint transform correlator scheme that introduces an additional random phase mask. The positions of both the conventional and the new mask are crucial for successful recovery of the original data. Although the two random phase masks are 2D, variation of their relative distance constitutes an additional dimension. Consequently by including this notion, both random phase masks act as a 3-dimensional (3D) key code increasing thereby the security with respect to the conventional JTC encryption scheme. We employ this scheme to multiplex encrypted data, displacing the encoding masks. During decryption of the multiplexed information, we only reconstruct the object that matches the correct predetermined 3D key code, i.e. that matches the random masks positions in the encryption step. We present actual experimental results, by using BSO crystal as recording medium, as well as their respective analysis.     

Defect-tolerant extreme ultraviolet nanoscale printing

We present a defect-free lithography method for printing periodic features with nanoscale resolution using coherent extreme ultraviolet light. This technique is based on the self-imaging effect known as the Talbot effect, which is produced when coherent light is diffracted by a periodic mask. We present a numerical simulation and an experimental verification of the method with a compact extreme ultraviolet laser. Furthermore, we explore the extent of defect tolerance by testing masks with different defect layouts. The experimental results are in good agreement with theoretical calculations.     

Excimer laser patterned dielectric masks for the fabrication of diffractive optical elements by laser ablation

Masks for laser processing are generated by laser ablation patterning of dielectric layer systems. The application of these masks for the rapid fabrication of diffractive optical elements (DOEs) is presented. The diffractive optical elements are designed as phase-only elements, assuming an illumination with a plane wave. A continuous phase function is calculated using an iterative Fourier transform algorithm (IFTA). This continuous phase function is reduced to two or four levels by an iterative Fourier quantisation algorithm (IFQA) that is able to include focal power. The fabrication of the DOE is performed in a two-step process. First, a binary amplitude mask (or a set of masks for multi-level DOEs) is made by structured ablation of a highly reflective dielectric coating (HR 248 nm) from a fused silica substrate. This is accomplished by using an ArF excimer laser emitting at 193 nm, a wavelength that is sufficiently absorbed in the HfO₂/SiO₂-dielectric layer system, leading to precisely ablated mask structures. In the second step, this mask is used in a 4:1 projection configuration to generate a surface profile in a polymer substrate by ablation at 248 nm. The depth modulation can be defined by adjusting laser fluence and pulse number. Examples of DOEs ablated in polycarbonate are shown and their performance is characterised.     

Focal depth extending using rotational symmetric pupil masks

Optical systems are analyzed with three kinds of rotational symmetric pupil masks: annular Gaussian ring mask, supergaussian ring mask, and quartic phase mask. In these masks, the quartic phase mask is found to be the best one to extend focal depth. Point spread function (PSF) and Strehl ratio (SR) are used to evaluate the imaging quality of the system with different defocus parameters. Without decoding needed, the focal depth of the system with quartic phase mask is four times as deep as aberration-free system. Different from the others, it suffers no obvious loss in the light throughput and lateral resolution.With twice focal depth extension, supergaussian ring mask suffers less loss in light throughput and lateral resolution than annular Gaussian ring mask.     

用振幅-相位型全息透镜实现光学变换的一般理论

本文将文献[1]和[2]中所讨论的纯相位型的全息透镜系统实现光学变换的理论推广到更普遍情形,提出了用振幅-相位型全息透镜组所构成的光学系统实现给定线性变换的一般理论,推导出诸全息透镜的振幅和相位分布所满足的方程组,应用计算机迭代求解法,不难得到它们的解。     

A New Algorithm for Die-to-Wafer-like Image Mask Inspection in Real Time

The effect of variations in defect printability must be considered in order to correctly evaluate mask defect inspection procedures. Because of nonlinear transfer effects and strong dependence of printability on defect types, it is difficult to define the boundary between real defect and false defect. To overcome this problem we developed a new algorithm for die-to-wafer-like image (D-to-WI) inspection in real time. This inspection method compares the die (wafer image calculated from CAD data) with the wafer-like image (WI) calculated from the mask image detected by the mask inspection system. To precisely calculate WI in real time, we developed a new simulation-based software. Since the phase of a mask inspection image cannot be measured, we introduce some assumptions regarding its phase. Moreover, we introduce some corrections for WI such as adding a DC component and multiplying by a proper value. To calculate the die which realizes the desired image with sufficient accuracy in real time, we also introduce a perturbation approach. We demonstrate numerically the possibility of a new algorithm for D-to-WI inspection. We confirm that this technique of generating WI from a measured mask pattern is well suited for attenuated phase shift masks (PSMs) and Cr binary masks.     

Polarization phase in aberration compensation

A phase/amplitude mask on the aperture of an imaging system results in a pupil function that is multiplicative with the lens function, resulting in a morphological transformation of the imaging wavefront. It was shown that such amplitude and phase functions can be implemented using polarization masks, with the advantage that the phase and amplitude can be controlled in real time and in some cases, independently of each other. The phase and amplitude variation over the mask can be controlled either by changing the polarization of the mask or by changing the input beam parameters. Wavefront tailoring using polarization-masked apertures is therefore feasible and may be utilized for focal shift and partial aberration compensation. For complete compensation of aberration, the phase distribution over the mask should be conjugate to that of the phase error of the aberrant wavefront, which necessitates the use of a continuously variable polarization mask. Since such a mask is difficult to implement, we have considered polarizing masks consisting of discrete polarized zones on the lens aperture, leading to polarization phase steps on the exit pupil of the imaging system. The simulation results presented in this paper show that effects of focal shift, partial compensation of primary spherical aberration and astigmatism can indeed be achieved by the proper use of polarization masked apertures.     

可调谐相位板空域频域联合分析

波前编码系统采用在传统光学系统中加入相位板来扩大光学系统的景深而避免传统景深延拓技术的不利影响. 由于相位板的参数不可调, 整个系统的景深延拓扩展率也不能动态可调. 采用两相位板组合的方法可以有效克服这一点. 本文首先从光线差的角度提出了两三次相位板组合下的光线像差分布以及点扩散函数尺寸的具体关系表达式, 直观体现了系统的光线结构, 指出了光线结构和点扩散函数尺寸受两三次相位板的面型和相对位移量的影响. 其次采用稳相法从空间域给出了系统点扩散函数表达式, 依据点扩散函数的振荡性质给出了有效带宽表达式, 提出了点扩散函数在像面的位置会随两相位板面型参数以及相对于光瞳中心的位移量而发生平移. 最后利用菲涅耳积分给出两三次相位板任意面型参数和相对位移组合下的准确光学传递函数. 在得到的调制传递函数中直观体现出了面型参数和相对位移量对调制传递函数和相位传递函数以及有效带宽的影响, 并说明了此系统相位传递函数的非线性性质. 通过空间域与频率域相结合的方法分析验证了传统的两三次相位板组合具有景深可调和带宽可调的性质, 为设计可调谐波前编码系统提供了理论依据.     

Fabrication of x-ray masks on a thick substrate for deep x-ray lithography

We consider a technique for manufacturing LIGA x-ray masks based on direct formation of a deep pattern topology of the mask by an x-ray microbeam. This technique does not require an intermediate mask, which strongly simplifies manufacturing and reduces the laboriousness and cost of the LIGA masks created. The basic processing steps (substrate pretreatment, resist coating, exposure, resist development, and galvanic process), advantages, and disadvantages of these x-ray masks are described. Examples of the created prototypes of copper LIGA masks on glassy carbon substrates and substrate-free self-supporting masks are presented.     

Lithographical laser ablation using femtosecond laser

Lithographical laser ablation was demonstrated using a femtosecond laser with a lithographical optical system. In this method, a femtosecond laser beam passes through a mask and the pattern is imaged on a film by a coherent optical system. As a result, the film is lithographically ablated, and a micron-sized pattern can be generated in a single shot. The resolution of generation was 13 m, and the narrowest width of a generated line was about 4 m. Moreover, the system was applied to transmission gratings as masks, and nano-sized periodic structures such as nano-sized hole matrices and nano-meshes were generated in a single shot. PACS 52.38.Mf; 42.25.Hz; 42.82.Cr; 81.16.-c     

Optimal key mask design for optical encryption based on joint transform correlator architecture

We examine perfect recovery in the optical encryption system based on joint transform correlator architecture, which requires the key mask to be space-limited and phase-only in the frequency domain. Accordingly, a discrete sinc function interpolation is used to generate a binary phase difference mask for image encryption and decryption. Furthermore, the optimal binary phase difference mask is derived from the interpolation process best approximating the ideal sinc function interpolation. The simulation results confirm better recovery of the decrypted image for applying the proposed key masks to the optical encryption system. Especially, the optimal binary phase difference mask significantly enhances the recovery performance.     

用于扩展目标自适应光学校正的相关波前传感器的理论和实验

研究了使用非相干、扩展光源的波前误差测量技术，分析了使用强度透过串型像面掩模的扩展目标相关波前探测原理，讨论了模拟目标的选择问题，探讨了根据目标图像生成像面掩模图像、进而制作像面掩模的方法，给出了所生成的像面掩模图像的典型结果，进行了以强度透过率型掩模为特征的单子孔径扩展目标波前传感器原理实验，比较了两种不同掩模的波前探测效果，获得了与理论分析一致的实验结果。     

Self-organized domain formation in low-dislocation-density GaN

The growth of high-quality GaN layers on a wafer size appropriate for device applications is based on heteroepitaxy on foreign substrates. Heteroepitaxial GaN layers with low densities (below 10⁶ cm⁻²) of extended structural defects can be achieved by lateral overgrowth of mask-patterned templates or by the growth of extremely thick GaN layers as a route towards free-standing GaN-pseudosubstrates. We present the microscopic analysis of such low-dislocation-density GaN layers by means of scanning cathodoluminescence microscopy (CL). Several state-of-the-art concepts of lateral overgrowth are compared, including two-step epitaxial lateral overgrowth of stripe masks (ELO), multi-stack ELO comprising several mask layers as well as an alternative approach involving in situ SiN nano-masks. The self-organized formation of typical microscopic growth domains with characteristic optical properties is evidenced by CL for all lateral overgrowth techniques. This behavior directly fingerprints the different growth rates and the specific impurity incorporation on non-equivalent GaN facets, e.g. (0001), or , always present during lateral overgrowth and closely related to the mask geometry. Accordingly, characteristic CL line shapes found in ELO on periodic, micrometer scale mask patterns are also detected for GaN on in situ SiN nano-masks and clearly reveal the individual facet structure during overgrowth. For thick GaN layers, CL is used to detect the spontaneous appearance of inclined facets inside inverted pyramidal defects. Optimized, thick GaN layers exclusively formed by (0001)-growth are proven to be laterally homogeneous despite periodically varying residual stress and dislocation density of the underlying ELO template.     

Features of the manufacture of deep X-ray lithography masks in the siberian synchrotron and terahertz radiation center

The development of a low-cost technology to manufacture high-contrast X-ray LIGA masks is topical because this technology is important for various applied research on microstructured products with minimum element sizes of 10–50 μm, such as microfluid analytical systems, selective waveguide mesh-based elements to control terahertz (THz) radiation, microshaped optical elements for the visible range, etc. Technological particularities of mask manufacture are considered. A method to check the quality of masks is presented. Test microproducts manufactured using the produced deep X-ray lithography masks are demonstrated.     

Analytical and experimental demonstration of depth of field extension for incoherent imaging system with a standard sinusoidal phase mask

The wavefront coding technique is used to enlarge the depth of field（DOF）of incoherent imaging systems. The key to wavefront coding lies in the design of suitable phase masks.To date,numerous kinds of phase masks are proposed.However,further understanding is needed regarding phase mask with its phase function being in a standard sinusoidal form.Therefore,the characteristics of such a phase mask are studied in this letter.Deriving the defocused optical transfer function（OTF）analytically proves that the standard sinusoidal phase mask is effective in extending the DOF,and actual experiments confirm the numerical results.At the same time,with the Fisher information as a criterion,the standard sinusoidal phase mask shows a higher tolerance to focus errors（especially severe focus errors）than the classical cubic phase mask.     

Cubic sinusoidal phase mask: Another choice to extend the depth of field of incoherent imaging system

Wave-front coding is a well known technique used to extend the depth of field of incoherent imaging system. The core of this technique lies in the design of suitable phase masks, among which the most important one is the cubic phase mask suggested by Dowski and Cathey (1995) [1]. In this paper, we propose a new type called cubic sinusoidal phase mask which is generated by combing the cubic one and another component having the sinusoidal form. Numerical evaluations and real experimental results demonstrate that the composite phase mask is superior to the original cubic phase mask with parameters optimized and provides another choice to achieve the goal of depth extension.     

Research on high-quality projecting reduction lithography system based on digital mask technique

In this paper, digital mask technique is presented, and a high-quality projecting reduction lithography system has been set up successfully. The core device of digital mask technique is digital micromirror device (DMD) which belongs to one of the electrically addressed spatial light modulators. The output image of DMD can be equivalent to a gray-scale mask of high precision, which can control the exposure precisely. If it is combined with a high-quality projecting reduction system, the fabrication of submicron diffractive optical elements can be realized successfully. The overall design of the system is described in detail, and some diffractive optical element masks are fabricated. Experimental results verify that the system is feasible. In the end, system characteristics and system error are summarized.     

Optimized phase pupil masks for extended depth of field

By properly designing a phase pupil mask to modulate or encode the optical images and then digitally restoring them, one can greatly extend the depth of field and improve image quality. The original works done by Dowski and Cathey introduce the use of a cubic phase pupil mask to extend the depth of field. The theoretical and experimental researches all verified its effectiveness. In this paper, we suggest the use of an exponential phase pupil mask to extend the depth of field. This phase mask has two variable parameters for designing to control the shape of the mask so as to modulate the wave-front more flexible. We employ an optimization procedure based on the Fisher information metric to obtain the optimum values of the parameters for the exponential and the cubic masks, respectively. A series of performance comparisons between these two optimized phase masks in extending the depth of field are then done. The results show that the exponential phase mask provide slight advantage to the cubic one in several aspects.     

Fabrication of multi-scale structures with multiple X-ray masks and synchrotron hard X-ray irradiations

Synchrotron hard X-ray irradiation can be utilized in lithography processes to manufacture precise structures. Due to the difficulty of precise X-ray mask fabrication in hard X-ray lithography, this X-ray process has been used mainly to fabricate precise microstructures. In this study, a technology is proposed for fabricating novel multi-scale patterns that include submicron-scale structures using hard X-rays. The required X-ray masks for submicron-sized patterning are fabricated by a simple UV lithography process and sidewall metal deposition. Above all, thanks to the high penetration capability of hard X-rays with sub-nanometer wavelengths, it is possible to employ multiple masks to fabricate a variety of patterns. By combining each sub-micron X-ray mask with typical micro-sized X-ray masks, a unique X-ray lithography is performed, and various multi-scale structures are fabricated. The usefulness of the proposed technology is demonstrated by the realization of these structures.