Generalized Oseen transformation for and enhancement of Bragg characteristics of electro-optic structurally chiral materials

The Oseen transformation is generalized to define a non-electro-optic structurally chiral material, wherein propagation along the axis of chirality is equivalent to that in an electro-optic SCM with local point group symmetry. This generalization shows that the exploitation of the Pockels effect amounts to an enhancement of the effective local birefringence, which in turn can enhance the characteristics of the circular Bragg phenomenon. Electro-optic SCMs can therefore serve as efficient and electrically controllable circular- and elliptical-polarization rejection filters.     

Electro-optic behavior of lithium niobate at cryogenic temperatures

The unclamped relative permittivity, , and the Pockels coefficient, , of congruent lithium niobate at a frequency f = 5760 Hz have been determined at low temperatures (7 K < T < 300 K). A He cryostat setup mounted to one arm of an electronically phase-stabilized Michelson interferometer was utilized for the measurement of . A continuous decrease in both parameters was observed as T → 0 K with limiting values of and , respectively.     

Highly enhanced second-order nonlinear susceptibilities in tailored GaN-AlGaN-AlN quantum well structures

A tailoring proposal for design of the strained quantum well structures, optimized with respect to the intersubband resonant second-order nonlinear properties, is presented in this article. A genetic-algorithm-based method is used in order to obtain the optimal potential shape, doping concentration and location in strained GaN-AlGaN-AlN quantum wells, and the structures are analyzed by a numerical solution of the Schrödinger-Poisson self-consistent method. In general form two types of asymmetric structures with remarkable results are obtained with different resonant frequencies, and in both cases results show a considerably high enhancement in the magnitude of the second-order nonlinear susceptibilities in higher resonant frequencies in comparison with a single quantum well structure with the same well width (5.02×10⁻⁸ m/V at to 2.9×10⁻⁵ m/V at and 2.43×10⁻⁵ m/V at ). The optimized structures exhibit considerable absorption coefficient and electroabsorption properties due to high dipole transition matrix element, high dopant concentration and reasonable Fermi level.     

First-principles study on the electronic structures and absorption spectra for the PbWO4 crystal with lead vacancy

The electronic structures and absorption spectra for the perfect PbWO₄ (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.     

Electrically controlled reflection and transmission of obliquely incident light by structurally chiral materials

The solution of a boundary-value problem for the reflection and transmission of obliquely incident plane waves due to a slab of a structurally chiral material (SCM) displaying the Pockels effect with a point group symmetry indicates the enhancement of circular Bragg phenomenon by the application of a dc voltage. The enhancement suggests that thinner SCMs can be used as devices such as polarization-rejection filters if the Pockels effect is exploited, for both normally and obliquely incident light.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Dielectric properties of betaine arsenate crystal near the phase transition

Dielectric measurements for single crystal of betaine arsenate (CH₃)₃NCH₂COO·H₃AsO₄ connected with the ferroelectric phase transition at 119 K were performed. The temperature dependence of electric permittivity was measured at dc electric fields up to 700 kV/m. The results show significant suppression of the dielectric constant by the application of dc field. Deviation from the classical behavior was observed. The electric permittivity was also measured in the paraelectric phase at constant temperature as a function of electric field intensity up to 700 kV/m. The electric permittivity might be well described by the classical relation with additional term including contribution to permittivity coming from clusters. The fit parameters indicate that the polar-clusters carries polarization P₀=0.7- with the clusters size of L=12-20 nm.     

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into nonpolar a-plane () p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID.     

Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates

Several non-polar a-plane GaN films had been grown by hydride vapor phase epitaxy (HVPE) on different designed metal organic chemical deposition (MOCVD) GaN templates, which exhibited various ridge-like sidewall facets surface morphologies. The templates induced a lateral growth at the early stage of the HVPE growth, and resulted in a kind of maskless epitaxy lateral overgrown (ELO) process. It is found that the dislocation reduced differently along [1 0 0 0] and [] directions in these HVPE a-plane GaN layers. In [0 0 0 1] direction, the dislocation reduction resulted from the optimal surface roughness value of the template. In [] direction, the inclined facet might be a main factor for the dislocation reduction in HVPE-GaN films. The maskless ELO process had a significant influence on decreasing the dislocation density.     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.     

Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface

The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along is larger than along . The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along and are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.     

Young's modulus surface and Poisson's ratio curve for cubic metals

The general expressions for the compliance , Young's modulus E(h k l) and Poisson's ratio υ(h k l, θ) along arbitrary loading direction [h k l] are given for cubic crystals. The representation surface for which the length of the radius vector in the [h k l] direction equals to E(h k l) and representation curve for which the length of the radius vector with angle θ deviated from the reference directions , and equals to υ(100, θ), υ(110, θ) and υ(111, θ) for example, are constructed for six FCC metals Ag, Al, Au, Cu, Ni, Pb and seven BCC metals Cr, Fe, Mo, Nb, Ta, V, W.     

Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Optical second harmonic generation from Pt nanowires

We have measured optical second harmonic intensity from arrays of Pt nanowires of 20 nm and 9 nm average widths, as a function of the incident and output light polarizations, the azimuthal angle, and the excitation photon energy. The nanowires were fabricated through shadow deposition on self-organized NaCl(1 1 0) faceted templates. The anisotropy of the SH intensity from the Pt nanowires was found to be stronger than that from the Au nanowires reported previously. The effective nonlinear susceptibility element , with the suffix 2 indicating the direction , was observed for Pt nanowires, although it was not observed for Au nanowires. This difference is suggested to be due to the weaker suppression of the incident fundamental fields by the depolarization field in the Pt nanowires and the larger anisotropy in the nonlinearity of Pt nanowires due to the thinner widths.     

Modelling of phase transitions and reaction at CO adsorption on oxygen precovered Pd(1 1 1)

Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO₂ reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)_O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)_O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.     

Optical properties of nickel(II)-azo complexes thin films for potential application as high-density recordable optical recording media

Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index ) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants , absorption coefficients α as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nm or less.     

STM study of l-serine adsorption on Cu(0 0 1)

The adsorption of l-serine on Cu(0 0 1) surface at 310 K was studied by scanning tunneling microscope (STM). l-serine molecules on the Cu(0 0 1) initially formed a domain of thick lines with a order structure along the direction on the terraces regardless of the coverage of serine. The thick lines were partly replaced by thin line along the direction, and completely disappeared in 2 h. It is considered that in these structures hydrogen bonds involved in hydroxymethyl group between adsorbates play some role in addition to intermolecular hydrogen bond between a hydrogen atom of amino group and an oxygen atom of carboxy group for alanine adsorption.