首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
The generation of dynamic holograms and four-wave phase conjugation in resonant media has been investigated under conditions of interaction between radiation and excited singlet and triplet states. Two mechanisms of optical control of resonant media non-linearities using independent pump-up to increase the diffraction efficiency of dynamic holograms have been considered. The peculiarities of non-linear recording of holograms, and a variant of quadratic recording, have been investigated. The dependence of the efficiency of diffraction by dynamic holograms on the intensity of interacting waves and the spectroscopic characteristics of the medium has been analysed.  相似文献   

2.
The authors experimentally observed the superluminal propagation at negative group velocity in C60 polymethyl methacrylate (PMMA) firstly. The largest time advancement of 7.61 ms was obtained at 1 mg/cm3 of sample concentration, the corresponding group velocity was −0.657 m/s. Fast light in C60 PMMA offers several advantages over liquids or vapors for a variety of possible applications: (i) easy for experimental measurement and practical applications (ii) easy for manufacture, (iii) sample concentration is another convenient parameter to vary the signal delay.  相似文献   

3.
A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1-16 keV C60+,2+ ion beams. Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Ym. Mass-lost rate QCM data show that a 13 keV C60 cluster leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy is in good agreement those predicted by “thermal spike” regime and MD models, when crater sizes are used to estimate sputtering.  相似文献   

4.
The structural modification of C 60 films induced by 300-keV Xe-ion irradiation was investigated.The irradiated C 60 films were analysed using Fourier transform infrared spectroscopy,the Raman scattering technique,ultraviolet/visible spectrophotometry and atomic force microscopy.The analysis results indicate that the Xe-ion irradiation induces polymerization and damage of the C 60 molecule and significantly modifies the surface morphology and the optical property of the C 60 films.The damage cross-section for the C 60 molecule was also evaluated.  相似文献   

5.
麻华丽  李英兰  杨保华  王锋 《物理学报》2005,54(6):2859-2862
描述了通过溶胶-凝胶法制备的C60-PMMA复合膜的结构、紫外-可见吸收特性、R aman 散射特性和红外吸收特性.通过对C60紫外-可见吸收光谱,Raman散射谱和红外 吸收谱的实验和理论分析,研究了C60与PMMA之间的电荷转移. 关键词: 溶胶-凝胶法 60-PMMA复合膜')" href="#">C60-PMMA复合膜 电荷转移  相似文献   

6.
李宏年 《物理学报》2004,53(1):248-253
在C60单晶超高真空解理面上制备C60的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb1C60和Rb3C60的电子态密度分布.当数纳米厚Rb3C60薄膜在C60单晶(111)解理面形成后,室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C60 关键词: 4C60和Rb5C60吸附相')" href="#">金属性Rb4C60和Rb5C60吸附相 60单晶')" href="#">C60单晶 相衍变 同步辐射光电子能谱  相似文献   

7.
In this letter, dispersion properties of low-frequency electrostatic waves in a C60 molecule are investigated. It is assumed that C60 molecule is charged due to the field emission, and hence the C60 molecule can be regarded as charged dust spheres surrounded by degenerate electrons and ions. We obtain the dispersion relation for the low-frequency electrostatic oscillations in the C60 molecule by using the quantum hydrodynamic model in conjunction with the Poisson equation.  相似文献   

8.
The effects of C60 cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs+, 10 keV C60+, 20 keV C602+ and 30 keV C603+ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.  相似文献   

9.
A series of computational investigations has been performed to examine the mesoscale energy dynamics of cluster bombardment events on a variety of systems. Through the development and application of the mesoscale energy deposition footprint (MEDF) model, we have successfully predicted the yield trends exhibited by a variety of projectiles and incident energies. The details of this model, dynamics of the damaged region, and comparison to experimental SIMS results are presented. The general cluster behavior which is revealed by this study is also discussed.  相似文献   

10.
X-ray photoelectron spectroscopy (XPS) using fullerene (C60) cluster ion bombardment was applied to films of a fluorinated block copolymer. Spectra so obtained were essentially different from those using Ar ion beam. Structure in the surface region with the depth down to 60 nm drawn on the basis of XPS with C60 beam was essentially the same as the one drawn by the result using dynamic secondary ion mass spectrometry, which is a well-established method for the depth analysis of polymers. This implies that XPS using C60 beam enables one to gain access to the depth analysis of structure in polymer films with the depth range over the analytical depth of conventional XPS, that is, three times inelastic mean-free path of photoelectrons.  相似文献   

11.
We report (FePt)Ag-C granular thin films for potential applications to ultrahigh density perpendicular recording media, that were processed by co-sputtering FePt, Ag, and C targets on MgO underlayer deposited on thermally oxidized Si substrates. (FePt)1−xAgx-yvol%C (0<x<0.2, 0<y<50) films were fabricated on oxidized silicon substrates with a 10 nm MgO interlayer at 450oC. We found that the Ag additions improved the L10 ordering and the granular structure of the FePt-C films with the perpendicular coercivity ranging from 26 to 37 kOe for the particle size of 5-8 nm. The (FePt)0.9Ag0.1-50vol%C film showed the optimal magnetic properties as well as an appropriate granular morphology for recording media, i.e., average grain size of Dav=6.1 nm with the standard deviation of 1.8 nm.  相似文献   

12.
采用密度泛函理论中的广义梯度近似对内掺氮富勒烯N2@C60的几何结构和电子性质进行计算研究.发现在N2@C60中,氮倾向以分子形式存在于C60中心处.键长分析、能级图、态密度图和电荷分析表明内掺氮分子对C60几何结构和电子结构带来的影响甚微.  相似文献   

13.
By applying non-equilibrium Green's functions in combination with density-functional theory, we investigate electronic transport properties of C60 coupled to carbon nanotubes and Li electrodes. The results show that electronic transport properties of CNT-C60-CNT and Li-C60-Li systems are completely different. Nonlinear I-V characteristic, varistor-type behavior and negative differential resistance (NDR) phenomenon are observed when electrodes are carbon nanotubes. We discuss the mechanism of I-V characteristics of CNT-C60-CNT systems in details. Our results suggest conductance, energy level of Frontier molecular orbitals, energy gap between HOMO and LUMO, the coupling between molecular orbitals and electrodes are all playing critical roles in electronic transport properties.  相似文献   

14.
Periodically wrinkled graphene sheet is of interest as a building block to develop nanoelectronic devices. This work presents that periodically wrinkled graphene sheet can be applied to a pattern, to form one-dimensionally well-ordered C60 molecules, via Monte Carlo simulations using the data obtained from atomistic calculations. Since the valleys of a sinusoidal graphene surface provide energetic ground sites for absorbed C60 molecules, their motions seeking stable positions lead to one-dimensional self-assembly. The size of the wrinkles, the density of adsorbed C60 molecules, and the temperature are very important parameters to obtain a one-dimensional C60 molecules array. We estimate high one-dimensional diffusion coefficients of C60 molecules on the wrinkled graphene surface. Our results can provide a possible approach to make a quantum information array, based on endohedral fullerenes and a graphene quantum dot array, by transforming C60 molecules to graphene nanoflakes.  相似文献   

15.
The quenching behavior of the triplets of C60 by various aniline derivatives (1a-d and 2a-e) was investigated by means of laser flash photolysis in benzonitrile at 293 K. Electron transfer process was proposed to be the main mechanism because of the direct detection of radical ions of aniline derivatives and C60 in time-resolved transient absorption spectra. The quenching rate constants (kq) of by different substrates determined at 740 nm approach or reach the diffusion-controlled limit. DFT method was employed to calculate the unknown oxidation potentials of substrates in solution. With these Eox values, free energy changes (ΔG) were obtained through Rehm-Weller equation. Dependence of observed quenching rate constants on the free energy changes further indicates the photoinduced reactions between 3C60* and substrates proceed through an electron transfer mechanism. Obtained kq values for the aniline derivatives are impacted obviously by ground-state configurations and the kinds substituents quantified by Hammett σ constant. Good correlation between log kq and σ values conforms to the empirical Hammett equation. A more negative ρ value (−3.356) was gained for anilines (2a-e) than that of N,N-dimethylanilines (1a-d) (−1.382), which suggests a more susceptible reactivity for the former substrates. Charge density distribution of reaction center “N” originated from quantum calculation supports this suggestion. In addition, a relationship between quenching rate constants and solvent viscosity was gained from C60/dimethyl-p-toluidine system in altered mixtures of acetonitrile and toluene.  相似文献   

16.
The profile of the energy deposition footprint is controlled during the C60+ erosion of Si surfaces by varying the incident energy and/or incident angle geometry. Sputter yield, surface topography, and chemical composition of the eroded surfaces were characterized using atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The experiments show that the 10 keV, 40° incident C60+ erosion of Si results in the formation of a C containing, mound-like structure on the solid surface. We find that the occurrence of this C feature can be avoided by increasing the incident energy of the C60+ projectile or by increasing the incident angle of the C60+ projectile. While both strategies allow for the Si samples to be eroded, the occurrence of topographical roughening limits the usefulness of C60+ in ultra-high resolution semiconductor depth profiling. Moreover, we find that the relative effect of changing the incident angle geometry of the C60+ projectile on the profile of the energy deposition footprint, and thus the sputter yield, changes according to the kinetic energy of the projectile and the material of the bombarded surface, a behavior that is quite different than what is observed for an atomic counterpart.  相似文献   

17.
Molecular dynamics simulations were performed to study the behavior of cluster SIMS. Two predominant cluster ion beam sources, C60 and Au3, were chosen for comparison. An amorphous water ice substrate was bombarded with incident energy of 5 keV. The C60 cluster was observed to shatter upon impact creating a crater of damage approximately 8 nm deep. Although Au3 was also found to both break apart and form a damage crater, it continued along its initial trajectory causing damage roughly 10 nm deep into the sample and becoming completely imbedded. It is suggested that this difference in behavior is due to the large mass of Au relative to the substrate water molecule.  相似文献   

18.
The generalised gradient approximation based on density functional theory is used to study the structural and electronic properties of the endohedral fullerene dimer (N 2 @C 60) 2.Four N atoms sit at the cage centres in the form of two N 2 molecules.The density of states and Mulliken charge analysis explore that the energy levels from-6 to-10 eV are mainly influenced by the N 2 molecules.  相似文献   

19.
The secondary ion mass spectrum of silicon sputtered by high energy C60+ ions in sputter equilibrium is found to be dominated by Si clusters and we report the relative yields of Sim+ (1 ≤ m ≤ 15) and various SimCn+ clusters (1 ≤ m ≤ 11 for n = 1; 1 ≤ m ≤ 6 for n = 2; 1 ≤ m ≤ 4 for n = 3). The yields of Sim+ clusters up to Si7+ are significant (between 0.1 and 0.6 of the Si+ yield) with even numbered clusters Si4+ and Si6+ having the highest probability of formation. The abundances of cluster ions between Si8+ and Si11+ are still significant (>1% relative to Si+) but drop by a factor of ∼100 between Si11+ and Si13+. The probability of formation of clusters Si13+-Si15+ is approximately constant at ∼5 × 10−4 relative to Si+ and rising a little for Si15+, but clusters beyond Si15 are not detected (Sim≥16+/Si+ < 1 × 10−4). The probability of formation of Sim+ and SimCn+ clusters depends only very weakly on the C60+ primary ion energy between 13.5 keV and 37.5 keV. The behaviour of Sim+ and SimCn+ cluster ions was also investigated for impacts onto a fresh Si surface to study the effects that saturation of the surface with C60+ in reaching sputter equilibrium may have had on the measured abundances. By comparison, there are very minor amounts of pure Sim+ clusters produced during C60+ sputtering of silica (SiO2) and various silicate minerals. The abundances for clusters heavier than Si2+ are very small compared to the case where Si is the target.The data reported here suggest that Sim+ and SimCn+ cluster abundances may be consistent in a qualitative way with theoretical modelling by others which predicts each carbon atom to bind with 3-4 Si atoms in the sample. This experimental data may now be used to improve theoretical modelling.  相似文献   

20.
The physical mechanisms underlying the surface based mass spectrometry techniques of atomic SIMS, MALDI and cluster SIMS are discussed along with the relation of the physics to the measured quantities. In particular, there are at least two types of motion resulting from cluster bombardment in SIMS. One scenario involves the individual atoms in the cluster initiating collision cascades similar to atomic bombardment. The second mechanism involves a mesoscale motion of the cluster as a whole. This mesoscale motion can induce an organized flow of the ejected material in a plume.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号