Coupling and quality factors in parallelepiped nonradiative dielectric resonators

In this work, the quality factors and the coupling effects have been investigated for parallelepiped dielectric resonators in nonradiative dielectric (NRD) waveguide, in order to achieve fundamental information for the design of various types of advanced filters. The unloaded quality factor has been calculated taking into account both conductor and dielectric losses through a straightforward version of the perturbation method. The electromagnetic coupling as a function of the distance between NRD guide and resonators has been evaluated through proper extensions of typical lumped equivalent circuits, thus quantifying resonance frequency shifts, external and loaded quality factors, etc.. To validate the derived theoretical models, suitable measurements of all these parameters have been performed at microwaves on X-band NRD prototypes.     

Comparative modal analysis of NRD parallelepiped dielectric resonators

The resonance modes of dielectric resonators having parallelepiped shape are extensively investigated in this work referring to the nonradiative dielectric (NRD) topology. Different numerical techniques, both rigorous and approximated (boundary elements, point matching, finite elements, transmission line approaches), are proposed and implemented to compute the relevant resonance spectrum as a function of the involved geometric and electromagnetic parameters. The theoretical results are discussed and compared also in connection with experimental investigations, carried out on suitable prototypes of NRD components. Qualitative and quantitative information is thus achieved to characterize with accuracy and efficiency the basic parameters (resonant frequencies, field configurations, etc.) involved in filter design and in other applications at microwaves and millimeter waves.     

Normal modes and quality factors of spherical dielectric resonators: I — shielded dielectric sphere

Electromagnetic theoretic analysis of shielded homogeneous and isotropic dielectric spheres has been made. Characteristic equations for the TE and TM modes have been derived. Dielectric spheres of radii of the order of μm size are found suitable for the optical frequency region whereas for the microwave region radii of the order of mm size are found suitable. Parameters suitable for their application in the optical and microwave frequency ranges have been used to compute the frequencies corresponding to the normal modes for the TE and TM modes. Expressions for the quality factors for realistic resonators, i.e., for a dielectric sphere with a non-zero conductivity and a metal shield with a finite conductivity have also been derived for the TE and TM modes. Computations of the quality factors have been made for resonators with parameters suitable for the optical and the microwave regions.     

Resonant tunneling in GaAs/AlxGa1−xAs superlattices with aperiodic potential profiles

Using the exact Airy function formalism and the transfer-matrix technique, we have numerically investigated in this paper the effect of intentional correlations in spatial disorder on transmission properties of one-dimensional superlattices. Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that barriers (wells) of one kind always appear in triply. It is shown that the intentional correlations in disorder and superlattices structural parameters are responsible to obtain resonant tunneling in aperiodic structure.     

Noise color and asymmetry in stochastic resonance with silicon nanomechanical resonators

Stochastic resonance with white noise has been well established as a potential signal amplification mechanism in nanomechanical two-state systems. While white noise represents the archetypal stimulus for stochastic resonance, typical operating environments for nanomechanical devices often contain different classes of noise, particularly colored noise with a 1/f spectrum. As a result, improved understanding of the effects of noise color will be helpful in maximizing device performance. Here we report measurements of stochastic resonance in a silicon nanomechanical resonator using 1/f noise and Ornstein-Uhlenbeck noise types. Power spectral densities and residence time distributions provide insight into asymmetry of the bistable amplitude states, and the data sets suggest that 1/f^α noise spectra with increasing noise color (i.e. α) may lead to increasing asymmetry in the system, reducing the achievable amplification. Furthermore, we explore the effects of correlation time τ on stochastic resonance with the use of exponentially correlated noise. We find monotonic suppression of the spectral amplification as the correlation time increases.     

Calculation of frequencies of normal vibrations and interpretation of IR spectra for 2,3-dihydro-3-O-(1,4-naphthoquinon-2-yl)-2-oxo-1,4-naphthoquinone derivatives

We have used B3LYP/6-31(d) density functional theory to calculate the frequencies and modes of the normal vibrations of 2-oxo-2,3-dihydro-and 2-methoxy-1,4-naphthoquinones. Based on these calculations within an additive model, we have assigned the carbonyl bands in the IR spectra of 2,3-dihydro-3-O-(1,4-naphthoquinon-2-yl)-2-oxo-1,4-naphthoquinones (diquinones 1–4). We have carried out a direct calculation of the vibrational spectra for diquinones 1–4 using PBE and B3LYP correlation functionals. We have shown that the calculation of the vibrational spectra of the diquinones based on an additive model on the whole is quite consistent with the results of direct calculations and the experimental spectra. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 713–720, November–December, 2006.     

Dielectric behavior,conduction and EPR active centres in BiVO4 nanoparticles

Bismuth vanadate (BiVO₄) nanomaterials were synthesized by mechano-chemical ball milling method and complementary investigations were devoted to their structures, nanoparticle morphologies and electronic active centres. The dielectric and conductivity behaviour were analysed systematically in wide temperature and frequency ranges to correlate such physical responses with the peculiarities of the samples. Large interfacial polarisations favoured by high specific surfaces of nanoparticles account for a drastic enhancement of the dielectric function in the quasi-static regime. Exhaustive analyses of the dielectric experiments were achieved and account for the main features of dielectric functions and their related relaxation mechanisms. The electrical conductivity is thermally activated with energies in the range 0.1–0.6 eV depending on the sample features. DC conductivity up to 10^–3 S/cm was obtained in well crystallized nanoparticles. Vanadium ions reduction was revealed by EPR spectroscopy with higher concentrations of the active centres (V⁴⁺) in more agglomerated and amorphous nanopowders. The EPR spectral parameters of V⁴⁺ were determined and correlated with the local environments of reduced vanadium ions and the characteristics of their electronic configurations. An insight is also made on the role of active electronic centres (V⁴⁺) on the conduction mechanism in nanostructured BiVO₄.     

Weak electric and magnetic form factors for semileptonic baryon decays in a relativistic quark model

Weak electric and magnetic form factors for semileptonic baryon decays are calculated in a relativistic quark model based on the Dirac equation with the independent-quark confining potential of the formV _q(r)=1/2(1+γ ⁰)(a ² r+V ₀). The values obtained for (g ₂/g ₁) are not very much different from the nonrelativistic results of Donoghue and Holstein. The values of (g ₁/f ₁) extracted from our model calculations of (f ₂/f ₁) in the Cabibbo limit compare well with the experimental values. The values of (f ₂/f ₁) for various semileptonic transitions are also estimated incorporating phenomenologically the effect of nonzerog ₂ in the ratio (g ₁/f ₁). It is found that the SU(3)-symmetry breaking does not generate significant departures in (f ₂/f ₁) values from the corresponding Cabibbo predictions.     

Effect of charge transfer efficiency on image quality in CCD line scan-based web inspection

Charge transfer efficiency limits the performance of a CCD line scan-based imaging system. Even though the degradation of the image quality due to the inefficiency in the charge transfer is often neglected in practical work it may have considerable effect on the system performance in applications where high resolution and uniform image quality are needed. In this paper the relationship between the charge transfer efficiency and the image quality in paper web inspection and, especially, in streak detection is discussed. A simple method for the estimation of the charge transfer efficiency is proposed. The method is based on the imaging of a square wave test pattern. The degradation of the image quality due to the charge transfer is analysed both theoretically and with practical imaging experiments. The results show clearly the variation in the system performance along the CCD scan. This is emphasised in the case of small and low-contrast surface defects on the web.     

Generalized form factors and spin structures of the kaon

We investigate the spin structure of the kaon, based on the nonlocal chiral quark model from the instanton vacuum. We first revisit the electromagnetic form factors of the pion and kaon, improving the results for the kaon. We evaluate the generalized tensor form factors of the kaon in order to determine the probability density of transversely polarized quarks inside the kaon. We consider the effects of flavor SU(3) symmetry breaking, so that the probability density of the up and strange quarks are examined in detail. It is found that the strange quark behaves differently inside the kaon in comparison with the up quark.     

Study of activation parameters and NMR spin-lattice relaxation time in some substituted amines

The present communication reports the experimental values of NMR spin-lattice relaxation time (T₁) and dielectric relaxation time (τ) of piperidine, pyrrole, pyridine, diethylamine, triethylamine and pyrrolidine. The values of activation energy (ΔE_A) obtained using dielectric relaxation time, have been correlated with calculated values of ΔE_A obtained using Arrhenius equation of NMR relaxation time (T₁) for pyridine, diethylamine and pyrrole. Authors have also established a correlation between the experimental values of NMR spin-relaxation time (T₁) with its calculated values obtained using different equations of dielectric relaxation time (τ).     

Spin-lattice relaxation times and nuclear overhauser enhancement effect for P metabolites in model solutions at two frequencies: Implications for in vivo spectroscopy

The relaxation time T₁ values and nuclear Overhauser enhancement factor for ³¹P signal were determined in model solutions of metabolites ATP, PCr and Pi, and AMP at two frequencies and in H₂O and ²H₂O solutions. The data were analyzed to resolve the contribution of different relaxation mechanisms. A knowledge of NOE is important in the light of recent applications of double resonance methods to enhance the sensitivity of in vivo ³¹P spectroscopy. The results show that chemical shift anisotropy is the dominant mechanism for ³¹P in ATP at the high field, whereas the dipolar interaction mechanism is the main feature for the ³¹P relaxation of PCr and Pi. The dipolar mechanism responsible for NOE originates from interactions of solvent water with ³¹P moiety. Implications for in vivo spectroscopy are indicated.     

The influence of turbulence on propagation properties of partially coherent sinh-Gaussian beams and their beam quality in the far field

Based on the extended Huygens–Fresnel principle, the closed-form propagation equation of partially coherent Sinh-Gaussian (ShG) beams through the turbulent atmosphere has been derived by using the quadratic approximation of the Rytov's phase structure function. The influence of turbulence on propagation properties of partially coherent ShG beams and their beam quality in the far field are studied both analytically and numerical. The fully coherent ShG beam has been treated as a special case of the partially coherent ShG beam when the degree of spatial coherence α=∞. It is shown that in comparison with the free-space propagation the turbulence accelerates the evolution of three stages that partially coherent ShG beams undergo. The smaller α is, the less partially coherent ShG beams are affected by the turbulence. In particular, we find that the β parameter decreases as the decentered parameter δ increases, but the dependence of the Strehl ratio on δ is not monotonous. There exists an optimal δ_opt, the influence of turbulence on the maximum intensity of the corresponding partially coherent ShG beam with δ_opt is the smallest. Therefore, a suitable choice of δ may reduce the influence of turbulence on the beam quality in the far field in practice.     

OBS网络中基于优先级与突发包分割的偏射路由机制

为了有效地降低突发包的丢失率和保证OBS网络中不同优先级业务的服务质量,提出了一种基于优先级与突发包分割的偏射路由机制.当冲突发生时,首先基于突发包的优先级进行"竞争突发包头部分割或者原突发包尾部分割"处理;无冲突部分直接在事先预留的输出数据信道上处理,冲突部分的分割突发包根据参数可调的偏射路由机制被偏射到最佳偏射路径上.仿真结果表明,该机制能够有效地降低整个网络的丢包率和端到端的延时,并且得到高优先级突发包的丢失率和延时低于低优先级突发包.由此可知,基于优先级与突发包分割的偏射路由机制能够有效地解决突发包的冲突问题,从而提高整个OBS网络的性能.     

Dielectric properties and study of AC electrical conduction mechanisms by non-overlapping small polaron tunneling model in Bis(4-acetylanilinium) tetrachlorocuprate(II) compound

In the present work, the synthesis and characterization of the Bis(4-acetylanilinium) tetrachlorocuprate(II) compound are presented. The structure of this compound is analyzed by X-ray diffraction which confirms the formation of single phase and is in good agreement the literature. Indeed, the Thermo gravimetric Analysis (TGA) shows that the decomposition of the compound is observed in the range of 420–520 K. However, the differential thermal analysis (DTA) indicates the presence of a phase transition at T=363 k. Furthermore, the dielectric properties and AC conductivity were studied over a temperature range (338–413 K) and frequency range (200 Hz–5 MHz) using complex impedance spectroscopy. Dielectric measurements confirmed such thermal analyses by exhibiting the presence of an anomaly in the temperature range of 358–373 K. The complex impedance plots are analyzed by an electrical equivalent circuit consisting of resistance, constant phase element (CPE) and capacitance. The activation energy values of two distinct regions are obtained from log σT vs 1000/T plot and are found to be E=1.27 eV (T<363 K) and E=1.09 eV (363 K<T).The frequency dependence of ac conductivity, σ_ac, has been analyzed by Jonscher's universal power law σ(ω)=σ_dc+Aω^s. The value of s is to be temperature-dependent, which has a tendency to increase with temperature and the non-overlapping small polaron tunneling (NSPT) model is the most applicable conduction mechanism in the title compound.     

Beam quality of truncated laser beams with amplitude modulations and phase fluctuations in turbulence

The closed-form expressions for the Rayleigh range z_R and the M²-factor of truncated laser beams with amplitude modulations (AMs) and phase fluctuations (PFs) in turbulence are derived, and the beam quality is studied by taking the z_R and the M²-factor as the characteristic parameters of beam quality. The M²-factor of truncated laser beams with AMs and PFs is always larger than that of truncated Gaussian beams both in free space and in turbulence. However, in turbulence the beam quality of truncated laser beams with AMs and PFs may be better than that of truncated Gaussian beams if the z_R is taken as the characteristic parameter of beam quality. For laser beams with AMs and PFs in turbulence, the beam quality expressed in terms of z_R is consistent with that in terms of the M²-factor versus the phase fluctuation parameter α, but not versus the intensity modulation parameter σ_A. The beam quality of truncated laser beams with AMs and PFs is less sensitive to turbulence than that of truncated Gaussian beams. The beam quality of laser beams with smaller α and larger σ_A is less affected by turbulence than those with larger α and smaller σ_A.     

双随机位相编码信息隐蔽传递过程中的融合和重构图像质量的研究

利用具有高度保密性的双随机位相编码技术,通过灰度迭加方法将编码信息的实部和虚部同时隐藏在一幅足够大的宿主图像中。在提取隐藏图像过程中直接对携带隐藏信息的融合图像进行处理,不需要利用原始宿主图像,且重构图像的质量较好,不受宿主图像的影响。在此基础上进一步对影响融合和重构图像质量的因素进行了讨论,结果表明,对于确定的宿主图像和隐藏图像可通过调整迭加权重得到最佳效果。     

渤海J油田储层核磁共振测井孔隙度影响因素分析及校正

渤海J油田沙河街组储层核磁共振（NMR）测井孔隙度和岩心NMR孔隙度均低于岩心氦孔隙度,这种现象影响了NMR测井的应用效果．通过开展岩心NMR实验,对该研究区仪器采集参数、井眼环境以及储层流体性质等因素进行分析,发现造成储层NMR测井孔隙度偏低的主要原因是高矿化度泥浆滤液侵入．基于饱和不同矿化度盐水对T₂谱的影响规律,确定了需要对T₂谱进行形态校正的矿化度下限值,并建立了对应不同矿化度的T₂谱形态校正模型及NMR孔隙度校正方法．应用结果表明,校正后的NMR测井孔隙度与岩心氦孔隙度的平均相对误差从13.56%下降至2.81%,有效提高了NMR测井孔隙度的精度．     

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H₂O dip, buffered oxide etch dip, oxygen plasma descum and rapid thermal annealing (RTA). The surface composition was calculated after correction for the interference of the Ga Auger lines in the N 1s portion of the spectra. The buffered oxide etched (BOE) surface showed a greater tendency for Al (compared to Ga) to be oxidized in the surface, under a layer of adventitious carbon. Three different treatments were found to yield a combination of low C and O levels in the surface. Both plasma cleaning and RTA were highly effective at reducing the carbon contamination of the surface, but did increase the oxygen levels. The RTA treated surface was found to have low levels of oxygen incorporation to a depth of 2-6 nm.     

Surface and interface effects in the optical properties of silver nanoparticles

We present novel experimental results about influences of surrounding foreign materials on optical properties of small silver clusters. First we show spectra of free cluster beams produced with different seeding gases Ar, Kr, Xe. Second, we estimate, from measured spectra, the cluster deformations and contact areas after deposition on different substrates (Cr₂O₃ and MgF₂) at room temperature and on SiO₂ at 110 K and between 160 K and 300 K. Third, we present and compare the static and dynamic charge transfer after embedding the clusters in various fluorides and compare with previous results on oxides. Received 2 September 1998 and Received in final form 3 January 1999