Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic fourterminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas （2DEG） with Rashba spin orbital interaction （RSOI）, one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Biittiker formalism, we found that when a longitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Inverse Spin Hall Effect in Two-Terminal Device with Rashba Spin-Orbit Coupling

We report a theoretic study on the inverse spin-Hall effect （ISHE） in a two-terminal nano-device that consists of a two-dimensional electron gas （2DEG） with Rashba spin-orbit coupling （RSOC） and two ideal leads. Based on a two-site toy model and Keldysh Green＇s function method, we derive an analytic result of ISHE, which shows clearly that a nonzero transverse charge current stems from the combined effect of the RSOC, the spin bias, and its spin polarization direction in spin space. Our further numerical calculations in a larger system other than two-site lattice model demonstrate that the transverse charge current, dependent on the strength of the RSOC, the Fermi energy of the system, as well as the system size, can exhibit oscillating behavior and even reverse its sign due to Rashba spin precession. These properties may be helpful for eficient detection of the spin current （spin bias） by measuring the transverse charge current in a spin-orbital coupling system.     

Spin Accumulation in a Rashba Nanoribbon

We investigate theoretically the spin accumulation in a Rashba spin-orbit coupling （SOC） nanoribbon nonadiabatically connected to a normal conductor. Both the nanoribbon and conductor are described by a hard-wall confining potential. Using the scattering matrix approach within the effective free-electron approximation, we have calculated the out-of-plane spin accumulation in the nanoribbon. It is found that the spin accumulation shifts toward the two edges of nanoribbon with the increasing of propagation modes. Specifically, as the Rashba SOC strength increases the spin accumulation in the nanoribbon will be enhanced and this result may suggest us a simple method to control the spin accumulation of the system by Rashba SOC strength.     

Spin Accumulation in a Rashba Nanoribbon

We investigate theoretically the spin accumulation in a Rashba spin-orbit coupling (SOC) nanoribbon nonadiabatically connected to a normal conductor. Both the nanoribbon and conductor are described by a hard-wall confining potential. Using thescattering matrix approach within the effective free-electron approximation, we have calculated the out-of-plane spin accumulation in the nanoribbon. It is found that the spin accumulation shifts toward the two edges of nanoribbon with the increasing of propagation modes. Specifically, as the Rashba SOC strength increases the spin accumulation in the nanoribbon will be enhanced and this result may suggest us a simple method to control the spin accumulation of the system by Rashba SOC strength.     

A Scheme for Spin Manipulation in a Quantum Dot with Both Charge and Spin Bias

We propose a scheme for the effective polarization and manipulation of electron spin by using a quantum dot with both charge and spin bias. Using the equation of motion for Keldysh nonequilibrium Green function, we study the spin accumulation and polarization for the system. Through analytical analysis and a few numerical examples, it is demonstrated that fairly large spin accumulation and polarization can be produced due to the breakingsymmetry of the chemical potential for different electron spin in the leads. Moreover, the direction and the strength of the spin polarization can be conveniently controlled and tuned by varying the charge bias or the gate voltage.     

Spin Polarization and Spin‐Flip Through Phosphorene Superlattice

The spin‐dependent transport properties, including spin polarization and spin‐flip for phosphorene superlattice in the presence of an extrinsic Rashba spin‐orbit interaction (RSOI) based on the transfer matrix method, are studied. The results show that the number of barriers in the superlattice structure plays a dominant role in output spin polarization, which can be used in designing optimized spintronic devices. In addition, by controlling on the Rashba strength, an incident spin‐up electron can be transmitted as a spin‐down electron. Also, it enables to convert the unpolarized incident electronic beam (with zero spin polarization) into an arbitrary output spin polarization, which plays a significant role in qubit circuits.     

Spin-dependent electron transport of a waveguide with Rashba spin--orbit coupling in an electromagnetic field

We investigate theoretically the spin-dependent electron transport in a straight waveguide with Rashba spin--orbit coupling (SOC) under the irradiation of a transversely polarized electromagnetic (EM) field. Spin-dependent electron conductance and spin polarization are calculated as functions of the emitting energy of electrons or the strength of the EM field by adopting the mode matching approach. It is shown that the spin polarization can be manipulated by external parameters when the strength of Rashba SOC is strong. Furthermore, a sharp step structure is found to exist in the total electron conductance. These results can be understood by the nontrivial Rashba subbands intermixing and the electron intersubband transition when a finite-range transversely polarized EM field irradiates a straight waveguide.     

一维铁磁/有机共轭聚合物的自旋极化研究

针对最近关于自旋注入有机体的实验研究，理论上计算了有机分子与磁性原子接触时的自旋极化现象.通过调节磁性原子的自旋劈裂强度，发现有机分子链内的自旋极化弱于金属链，但强于半导体链.同时还研究了有机分子链内自旋极化随电子-声子耦合强度的变化关系以及界面耦合的自旋相关效应. 关键词： 界面耦合 自旋极化 自旋劈裂     

Influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a Rashba two-dimensional electron gas

We study theoretically the influence of spin--orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin--orbit coupling. We show that, after such an influence is taken into account, the static intrinsic spin-Hall effect can be stabilized in a disordered Rashba two-dimensional electron gas, and the static intrinsic spin-Hall conductivity shall exhibit some interesting characteristics as conceived in some original theoretical proposals.     

Persistent Spin Current in a Hard-Wall Confining Quantum Wire with Weak Dresselhaus Spin-Orbit Coupling

We investigate theoretically the spin current in a quantum wire with weak Dresselhaus spin-orbit coupling connected to two normal conductors. Both the quantum wire and conductors are described by a hard-wall confining potential. Using the electron wave-functions in the quantum wire and a new definition of spin current, we have calculated the elements of linear spin current density j^Ts,xi and j^Ts,yi（i=x, y, z）. We find that the elements j^Ts,xx and j^Ts,yy have a antisymmetrical relation and the element j^Ts,yz has the same amount levelas j^Ts,xx and j^Ts,yy. We also find a net linear spin current density, which has peaks at the center of quantum wire. The net linear spin current can induce a linear electric field, which may imply a way of spin current detection.     

量子材料中的自旋—动量锁定新效应

继铁磁金属之后,具有强自旋轨道耦合与空间反演破缺的自旋极化量子材料,通过自旋—动量锁定（如Rashba、Dresselhaus自旋劈裂）,实现了如自旋轨道矩、自旋场效应晶体管等新一代自旋电子学效应。近期,通过耦合新自由度,研究者们发现了一些新奇的自旋—动量锁定效应,包括突破空间反演对称限制的“隐藏自旋极化”效应和突破自旋轨道耦合限制的“反铁磁自旋极化”效应,这些发现再一次拓宽了可利用的自旋电子学材料。文章简要回顾了自旋—动量锁定效应的基本原理和发展现状,重点介绍了耦合实空间自由度的自旋—动量—层锁定效应,即隐藏自旋极化;和耦合局域磁矩自由度产生的与自旋轨道耦合无关的自旋—动量锁定效应,即反铁磁自旋极化;以及与两者相关的新型自旋电子学效应。最后,展望了自旋—动量锁定中多自由度耦合问题、隐藏X物理和反铁磁自旋电子学三个方面的未来发展。     

自旋轨道耦合引起的电偶极矩

文章介绍了由于自旋轨道耦合导致的电子的电偶极矩在自旋电子学理论中的基本意义.研究发现,该电偶极矩与自旋流张量的反对称部分直接相关.它不仅直接导致可观测的电磁学效应,而且与电子在电场受到的力以及力矩有关,从而为自旋的电子学操控提供了可能.     

自旋光电流与电流诱导的电子自旋极化——半导体自旋电子学的新进展

文章通过自旋光电流与Kerr效应的实验，介绍在自旋一轨道耦合的体系中，如何通过自旋注入来驱动电子的运动产生电流，又如何反过来通过电子的运动或电流在系统中产生自旋激化．实验结果表明，自旋轨道耦合不但给我们提供了对自旋的操控手段，而且还给我们提供了用非磁性材料且无外加磁场条件下作为自旋源的新途径．     

一维有机聚合物中极化子的自旋进动

从理论上讨论一维有机聚合物中由门电压导致的极化子自旋的输运动力学,由于自旋-轨道相互作用,当极化子沿着聚合物链运动时,自旋发生周期性进动.     

Spin current and its heat effect in a multichannel quantum wire with Rashba spinben orbit coupling

Using the perturbation method, we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin—orbit coupling. The heat generated by the spin current is calculated. With the increase of the width of the quantum wire, the spin current and the heat generated both exhibit period oscillations with equal amplitudes. When the quantum-channel number is doubled, the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2. For the spin current j_s,xy, the amplitude increases with the decrease of the quantum channel; while the amplitude of the spin current j_s,yx remains the same. Therefore we conclude that the effect of the quantum-channel number on the spin current j_s,xy is greater than that on the spin current j_s,yx. The strength of the Rashba spin—orbit coupling is tunable by the gate voltage, and the gate voltage can be varied experimentally, which implies a new method of detecting the spin current. In addition, we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels. All these characteristics of the spin current will be very important for detecting and controlling the spin current, and especially for designing new spintronic devices in the future.     

并五苯分子电荷注入导致自旋极化的密度泛函理论研究

用密度泛函理论研究了不带自旋的空穴注入并五苯后体系的自旋相关特性. 电荷注入后并五苯分子中存在自发自旋极化行为. 当注入电荷量达一定程度,分子磁矩随注入电荷量的增加呈线性增长,最大磁矩可达1 μB. 注入电荷和并五苯分子的相互作用导致分子体系结构发生变化,同时电荷密度分布及自旋密度分布也发生了变化. 注入电荷先填充自旋劈裂的碳原子p_z轨道.     

Spin texturing in quantum wires with Rashba and Dresselhaus spin–orbit interactions and in-plane magnetic field

In this work, we investigate the effects of interplay of spin–orbit interaction and in-plane magnetic fields on the electronic structure and spin texturing of parabolically confined quantum wire. Numerical results reveal that the competing effects between Rashba and Dresselhaus spin–orbit interactions and the external magnetic field lead to a complicated energy spectrum. We find that the spin texturing owing to the coupling between subbands can be modified by the strength of spin–orbit couplings as well as the magnitude and the orientation angle of the external magnetic field.     

Spin Hall Magnetoresistance and Spin Nernst Magnetothermopower in a Rashba System: Role of the Inverse Spin Galvanic Effect

In ferromagnet/normal‐metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current‐induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two‐dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current‐induced spin polarization on the boundary conditions, and the spin Hall magnetoresistance is shown to acquire a non‐trivial and asymmetric dependence on the magnetization direction of the ferromagnet.     

核子中夸克的极化

根据强子张量和向前的虚光子康普顿散射振幅之间的关系,用虚光子总吸收截面表达了核子的自旋结构函数和它的第一矩. 在夸克模型中计算了小动量转移区的虚光子的总吸收截面,进而得到了第一矩的理论结果,导出了质子中夸克的极化. 合理地解释了EMC和SLAC的实验结果.