流体静压力对锗隧道二极管伏安特性的影响

本文报导了在流体静压力18000kg/cm²的范围内,锗隧道二极管伏安特性随压力变化的实验结果。测量了十六只锗隧道二极管的峯值电流I_P、峯值电压V_P、谷值电流I_V、谷值电压V_V、指数过剩电流I_X和反向隧道电流等参数与流体静压力的关系。结果表明:峯值电流I_P相对于压力的半对数作图为斜率不同的二段下降直线,在5000—9000kg/cm²范围内有转折点;峯值电压随压力改变较小;在误差范围内谷值电压不随压力而改变。对于大部分被测管子,谷值电流与压力的关系类似于峯值电流与压力的关系;随着压力的增加,指数过剩电流区向高偏压方向移动。讨论了峯值电流及指数过剩电流随压力变化的规律和其他结果。认为转折点的存在是表明隧道跃迁机构的改变;由指数过剩电流区固定电流值测偏压随压力改变,求得禁带宽度的压力系数与其他方法获得的结果很好符合。     

塑压接触平面上之长程滑动与短程滑动(等倾陡线规律)

塑压接触面之质点滑动线称“摩擦线”。滑动现象有两种基本类型,一为“长程滑动”,摩擦线为质点之长程连续轨迹,如抽拔,挤压,冲压等塑性过程中之滑动;一为“短程滑动”,质点仅在摩擦线上滑动一微小距离,如锻,轧,压力实验等过程中之滑动(小压缩时)。过去对这两种滑动现象之规律未曾分别处理。本文将摩擦力接纯力学关系视为一切应力,即压应力p与摩擦应力τ,以边界平衡关系,相系于一应力函数F: τ=Fp, F=((l₁²p₁²+l₂²p₂²+l₃²p₃²)/(l₁²p₁+l₂²p₂+l₃²p₃)²)^1/2-1, p₁,p₂,p₃为内部主应力; l₁,l₂, l₃为p对p₁,p₂,p₃之夹角余弦。除视τ为p之函数τ=τ(p)外,对摩摩力之物理性质不作规定。在此基础上,以住意质点滑动之最小摩阻功为基本条件分析滑向规律,一如任意质点滑动之最小摩阻力条件之于“陡线规律”。如此,则问题类于古典变分问题,变分方程引出两结论:在短程滑动中,滑向规律为已知之陡线规律;在长程滑动中为以下将提出之“等倾陡线规律”。并得到几个有关重要推论。     

铁电阴极电子枪的初步实验研究

 设计加工了铁电阴极电子枪,给出了模拟计算及其初步实验结果。电子枪为皮尔斯枪型,采用顺电相陶瓷Ba0.67Sr0.33TiO₂作为铁电阴极材料,电子枪电压脉宽80 ns,幅值最大可达80 kV,设计电子枪导流系数为0.15×10^-6 A·V^-3/2。电子枪电压从30 kV逐步增大到56 kV,测量到其发射电流从0.7 A逐步增大到2.5 A。根据实验结果拟合得到的电子枪导流系数为0.2×10^-6 A·V^-3/2,与设计基本符合。     

小注入下晶体管Ic-VBE特性的指数因子的研究

本文讨论了影响小注入下晶体管的l_c-V_BE特性的各种因素。作者发现发射结势垒区准费米能级降落的影响对于解释实验中发现的n^*≡d(V_BE/V_T)/dInl_c<1的情况是重要的。文中也给出了精确测量集成晶体管对的n^*值的差分方法。     

类氖等电子系列离子基态的双电子复合速率系数研究

使用全相对论组态相互作用方法, 能级-能级细致计算了0.1 E_I ≤ kT_e≤ 10 E_I (E_I是类钠离子基态的第一电离能) 温度范围内类氖离子基态双电子复合(DR)速率系数, 双激发自电离能级考虑了(2s2p)⁷3ln'l', (2s2p)⁷4l4l' 以及(2s2p)⁷4l5l'组态. 对于(2s2p)⁷3ln'l'双激发自电离组态, 轨道角量子数l' >8 的(2s2p)⁷3ln'l'双激发自电离态对双电子复合速率系数的贡献可以忽略不计; (2s2p)⁷3ln'l'双激发自电离组态的高里德堡态对双电子复合速率系数的贡献满足 n'^-3组态-组态外推法, 并且核电荷数越大, 趋于n'^-3标度的n'值越小; 对细致能级计算得到的类氖离子基态的总DR速率系数进行了拟合, 得到类氖离子基态的总DR速率系数随核电荷数 Z和电子温度变化的经验公式, 该拟合公式与细致计算结果的偏差在2%以内, 能较准确的计算任意核电荷数Z的类氖离子在0.1E_I ≤ kT_e ≤ 10E_I电子温度范围的DR速率系数. Burgess-Merts(BM)近似公式不适用于估算低温(kT_e<0.3 E_I)类氖离子的DR速率系数, 在高温(kT_e>2E_I)时, 类氖离子的DR速率系数可以用BM近似公式表示.     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.     

含QCD修正的p-A碰撞Drell-Yan过程的核效应

在微扰QCD α_s级近似下,采用双重Q²重标度模型,计算了p-A碰撞Drell-Yan截面与p-N碰撞Drell-Yan截面之比,即核效应函数R_QCD(x_A,Q²).计算结果与没有QCD修正的R(x_A,Q²)值比较,在0.03≤x_A≤0.3之间都有不同程度的压低,与实验符合的情况有所改善.说明对核Drell-Yan过程核效应的研究,QCD修正是有一定意义的,并且在计入这种修正后,双重Q²重标度模型仍然是有效的.     

关於展开子

本文讨论展开子的一些性质。将展开子A_nrst变换至ξ表示,定义为〈ξ|〉=∑ξ₀^-n-1ξ₁^rξ₂^sξ₃^tA_nrst,立即可以看出〈ξ|〉在洛伦兹变换中的变换,正如标准表示中的变换。由此可以立即证明,在标志洛伦兹群的各种不可约表示的两个量J=-1/2I_klI^kl,I=1/2ε^klmnI_klI_mn中,对於展开子而言,I一定等於零。我们也证明了如果我们要求J的本徵函数〈ξ|〉在各处行为正常,便获得J<0,亦即展开子表示为么正的条件。对於在展开子空间(J,0)及其他空间(I′,J′)中作用的矢量算符,我们作出了计算。选择定则为(i)I′=0,J′=1+J±2(1+J)^1/2;(ii)I′=±(1+J)^1/2i,J′=1+J。我们又证明了ξ^vξ_v?/(?ξ^μ)/(ξ^μ)-(1±(1+J)^1/2)ξ_μ将(J,0)空间变为(1+J±2(1+J)^1/2,0)空间。利用上式中取“-”符号的算符,我们可以构成一个像(-ir_μp^μ+k)ψ=0的波动方程,其中ψ只在两个展开子空间中。     

VxOyq团簇按照△=2y+q-5x值进行分类

按照团簇的氧化指数,对钒氧化物团簇V_xO_y^q (x≤8, q=0,±1)进行了分类(钒氧化物的氧化指数△=2y+q-5x). 密度泛函理论计算结果表明,氧化指数相同的团簇倾向于具有相似的成键方式、电子结构和反应活性. 根据这一规律,提出了V₂O₆和V₃O₆⁺新的可能的基态构型. 在钒氧化物体系上的成功应用,表明这种分类方法可以有效地     

强子衰变过程J/ψ→V+X,X→V+V的角分布分析

本文讨论了J/ψ的强子衰变过程J/ψ→V₁+X,X→V₂+V₃,V₂,V₃→2P(或3P)(其中V_i代表矢量介子,P代表赝标介子).对于具有不同自旋-宇称J^P的中间态X,得到了相应的角分布的螺旋度形式.这些公式对于利用BEPC上得到的J/ψ事例,确定上述过程中间态X的自旋-宇称是有帮助的.     

Growth of (GaAs)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(ZnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solution films and investigation of their structural and some photoelectric properties

Single-crystal films of the substitutional solid solution (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) on GaAs substrates have been grown using liquid phase epitaxy. The X-ray diffraction patterns, photoluminescence spectra, and current-voltage characteristics of the n-(GaAs)-p-(GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) heterostructures prepared have been investigated. The lattice parameters of the film a _f = 5.6544 Å and the substrate a _s = 5.6465 Å have been determined, and the profile of the molecular distribution of the solid solution components has been obtained. The photoluminescence spectrum of the (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) films exhibits a narrow peak (against the background of the broad luminescence band) with a maximum in the luminescence intensity at a photon energy of 2.67 eV due to the presence of Zn-Se bonds in the structure (ZnSe is covalently bonded to the tetrahedral lattice of the GaAs matrix). It has been shown that the direct branch of the current-voltage characteristics of the structures under investigation is described by an exponential dependence I = I ₀exp(qV/ckT) at low voltages (V > 0.3 V) and by a power-law dependence I ～ V ^α with exponents α = 4 at V = 0.4–0.8 V, α = 2 at V = 0.8–1.4 V, and α = 1.5 at V > 2 V. The experimental results have been explained in the framework of the double-injection model for the n-p-p ⁺ structure under the condition that the concentration distribution of nonequilibrium charge carriers has a minimum.     

Observation of bulk Landau levels in transverse magnetotunneling in AlxGa1-xAs capacitors

Two phenomena are observed for transverse magnetotunneling (B⊥J) from an accumulation layer in n⁻ GaAs-undoped Al_xGa_1−xAs−n⁺ GaAs capacitors. One effect is a strong dependence of tunnel currents, J, at high applied voltage and high current densities, on the angle between J and the magnetic field, B. The second effect is the observation of structure in tunnel currents for applied voltages between 0.15 V and 0.6 V which is interpreted to result from tunneling into Landau levels formed in the n⁺ GaAs electrode.     

Excess currents in narrow gap CdxHg1−xTe p-n junctions

Reverse bias dark currents in p-n junctions fabricated in undoped Cd_xHg_1−xTe (CMT) (0.22 < x < 0.24) LPE epilayers by ion implantation of boron have been studied at different temperatures. The behaviour of current-voltage (I–V) characteristics at temperatures below 80 K allows us to discriminate two types of material. The first group consists of samples with currents dominated by a band-to-band tunnelling mechanism. The second is characterized by the current which exceeds that in the first group. The excess currents proved to be connected with fluctuations of charged impurity density which changed local tunnel transparency of the potential barriers. This mechanism is likely to dominate current in closely compensated samples. A quantitative analysis of I–V characteristics is made.     

A Migdal-Kadanoff renormalization-group approach for the XY spin glass

Superconducting rings with mesoscopic Josephson junctions are considered in the presence of a do voltage bias V _o and of non-classical electromagnetic fields (coherent states, squeezed states, number eigenstates etc.). Due to the quantum nature of these devices the current I is a quantum mechanical operator and therefore «I²» is in general different from «I»². Using «I ²» we define the rms current I _rms, and using the various harmonics of «I» as if they belong to a classical current we define the “classical rms current” I _{rms, class}. In the case of classical currents these two quantities are identical, but for quantum currents they are different. We study their difference for various non-classical fields, and find that in some cases this difference is large. These predictions could be observed experimentally through the electromagnetic power that these currents radiate. An experiment that confirms the I _rms and refutes the Irms, class would prove the quantum nature of these currents.     

Measurement of the cation partitionings in FexV3−xS4 (x = 1.0 and 2.0) by powder neutron diffraction

Full profile analyses of powder neutron diffraction data have provided direct measures of the cation partitionings in the ternary sulfides Fe_xV_3−xS₄, x = 1.0 and 2.0. In Fe₂VS₄, the cation sites of type I in the metal-deficient layers are completely populated by iron atoms, giving a structural formula Fe^IFe^IIV^IIS₄. In FeV₂S₄, in contrast to earlier results, the partitioning of the iron atoms is found to be incomplete, the corresponding structural formula being Fe_0.72^IV_0.28^IFe_0.25^IIV_1.75^IIS₄. In both materials, the diffraction data suggest that the distributions of iron and vanadium atoms in the metal-rich layers are non-random. The present structural results are considered in relation to those from earlier experiments on this system.     

Tunnett

Conclusion The p⁺–n⁺–i(v)–n⁺ GaAs Tunnett diodes have been fabricated with control of the growing diffusion technique in TDM CVP liquid phase epitaxial growth. The threshold current density (J_th) of 2.8×10⁴ A/cm², the threshold voltage (V_th) of 5.3V for the oscillation and the 1% duty cycle operation have been succeeded. The more reduction of J_th and V_th will be able to realize the CW operation.     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

Pressure effects in AlAs/Inx Ga1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.     

Josephson and single-particle currents between partially dielectricized superconductors with charge-density waves

The amplitudes of the nonstationary Josephson current I ¹, the interference current I ², and the quasiparticle current J through symmetric and asymmetric tunnel junctions, including superconductors with charge density waves, are calculated. In the symmetric (s) case the dependence of the Josephson current I _s ¹ on the voltage V on the junction has a logarithmic singularity at |eV|=2Δ, Δ+D, and 2D, where , Δ and Σ are the superconducting and dielectric order parameters, and e is the unit charge. At temperatures T≠0 jumps appear in the current-voltage characteristics I _s ¹ (V) at |eV|=D−Δ. Jumps and singularities are observed in the currents I _s ² and J _s at the same voltages at which singularities and jumps appear in I _s ¹ , respectively. In the nonsymmetric (ns) junctions which include an ordinary superconductor, singularities and jumps occur at |eV|=D+Δ_BCS, Δ+Δ_BCS, and (for T≠0) |D−Δ_BCS| and |Δ−Δ_BCS|, where Δ_BCS is the order parameter of an ordinary superconductor. The quasiparticle current J _ns is an asymmetric function of the voltage V and does not depend on the sign of Σ. The results are compared with experiment. Fiz. Tverd. Tela (St. Petersburg) 39, 991–999 (June 1997)