Bulk polycrystalline La0.8Li0.2MnO3 is found to switch between a low‐resistance state and a high‐resistance state on thermal cycling. The low‐temperature, high‐resistance state exhibits strong electroresistance whereas the high‐temperature, low‐resistance state does not. The change in resistance between the two distinct states is of two orders of magnitude. It is proposed that the observed metastability may serve as the basis for resistive thermal‐switching devices.
Osmium diboride has been known for some time as a low compressibility material and a superhard material. It is suitable for hard coating applications. It is also a superconductor below 2.1 K. Using first‐principles calculations, the author investigated the geometry of its Fermi surface (FS) and calculated the related physical quantities. The theoretical results are used to predict the frequencies of the Shubnikov–de Haas quantum oscillations. Comparison with recent measurements of the magneto‐resistance oscillations in osmium diboride is made.
Interaction between negatively charged Nafion® and a positively charged polybenzimidazole‐decorated carbon nanotube leads to the formation of an ionic complex with high charge density for proton conduction, which can lead to an improvement in transport properties. Here we investigate the high‐temperature and low‐humidity proton conductivity of this nanocomposite membrane as a potential membrane for fuel cell applications.
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ～2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.
The properties of manganite/ruthenate superlattices are reviewed with a specific focus on the manganite/ruthenate interface. La0.7Sr0.3MnO3/SrRuO3 and Pr0.7Ca0.3MnO3/SrRuO3 superlattices grow with a high crystalline perfection as illustrated in the figure to the right: at the interface the individual cation species can be clearly identified, interdiffusion is marginal. The superlattices show magnetization processes with an intricate interplay between magnetocrystalline anisotropy, size of the layer magnetization, spin confinement and interfacial antiferromagnetic interlayer coupling. There is further an unprecedented Curie temperature stabilization at room temperature values of the La0.7Sr0.3MnO3 layers in the superlattices down to layer thicknesses of one unit cell. The magnetotransport properties, especially the Hall effect, indicate the existence of a quasi‐two‐dimensional hole gas at the La0.7Sr0.3MnO3/SrRuO3 interface; this is further supported by an analysis of cation displacements as determined from scanning transmission electron microscopy. The manganite/ruthenate interface might be considered as a model system for the study of interfacial reconstruction and charge transfer in a highly correlated ferromagnetic system.
We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se2 absorber layers are discussed.
Thin amorphous tantalum films are prepared on Si(111) substrates in a metallic glassy state. The amorphous monoatomic state of the film is characterized by X‐ray diffraction studies. The glassy state leads to a negative t emperature c oefficient of the r esistivity (TCR) for low sample temperatures <200 K which is attributed to incipient localization. Above 200 K a positive TCR is observed as expected for a normal Boltzmann transport regime. Upon heating the Si substrate to 1200 K TaSi2 is formed out of the amorphous tantalum film and the silicon substrate. The TaSi2 layer is crystalline as evident from X‐ray diffraction data.
Monte‐Carlo simulations predict that a local correlated disorder is responsible for many of the novel transport and magnetic properties of colossal magnetoresistance (CMR) materials such as manganites. One important prediction of these models is that the resistivity at the metal–insulator transition (MIT) in manganites depends strongly on the correlated quenched disorder. However, experimental confirmation has been challenging since it is difficult to control the amount of disorder in these compounds. We carried out experiments on Sm0.55Sr0.45MnO3, a prototypical CMR manganite with a sharp MIT, whereby the oxygen‐related disorder is systematically enhanced by low temperature thermal activation. We observe dramatic changes in the temperature dependence of resistivity at the MIT as the amount of quenched disorder is increased, occurring in a manner that is in agreement with theoretical predictions.
The metastability of the bixbyite‐ and corundum‐type In2O3 polymorphs up to 33 GPa (at room temperature) is shown. While compressed (in diamond anvil cells) and laser‐heated, both polymorphs undergo a phase transition to the Rh2O3‐II‐type structure (space group Pbcn, No. 60). The direct transition from bixbyite to Rh2O3‐II structure has not yet been observed for any other oxide.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
The Fe3O4(111)/graphene/Ni(111) trilayer is proposed to be used as an ideal spin‐filtering sandwich where the half‐metallic properties of magnetite are used. Thin magnetite layers on graphene/Ni(111) were prepared via successive oxidation of a thin iron layer predeposited on graphene/Ni(111) and the formed system was investigated by means of low‐energy electron diffraction and photoelectron spectroscopy. The electronic structure and structural quality of the graphene film sandwiched between two ferromagnetic layers remain unchanged upon magnetite formation as confirmed by experimental data.
Nanostructures formed in a titanium dioxide (TiO2)–poly(styrene)‐block‐poly(ethyleneoxide) nanocomposite film on top of fluor‐doped tin oxide (FTO) layers are investigated. The combinatorial approach is based on probing a wedge‐shaped FTO‐gradient with grazing incidence small angle X‐ray scattering (GISAXS) in combination with a moderate micro‐focus X‐ray beam. The characteristic lateral length is given by adjacent nanowire‐shaped TiO2 regions. It decreases from 200 nm on the thick FTO layer to 90 nm on the bare glass surface.
Optically transparent and high‐quality hybrid ZnO nanoparticle and anthracene embedded polyphenylsiloxane (PPS) glass films were spin‐coated on quartz substrates. A strong Förster resonant energy transfer (FRET) process was indicated by the observation of quenching of the ZnO emission and an enhancement of the anthracene emission at room temperature. The efficiency of this energy transfer between ZnO and the S1 vibronic states of the anthracene molecules can be optimized to exceed 90%.
We report enhanced anomalous photovoltaic effects and switchable photovoltage generation in pure and Pr–Cr co‐doped BiFeO3 (BFO) nanotubes (NTs). Influence of metal doping on short circuit current, open circuit voltage, power conversion efficiency and fill factor are investigated. The power conversion efficiency of pure BFO NTs (～0.207%) is found to be enhanced by several orders of magnitude in comparison with the reported bulk effect. Pr‐doped NTs provide highest values of power conversion efficiency (～0.5%).
Ultrafast transverse thermoelectric voltage response has been observed in c‐axis inclined epitaxial La0.5Sr0.5CoO3thin films. Voltage signals with the rise time of 7 ns have been detected under the irradiation of pulse laser with duration of 28 ns. A concept, named response rate ratio, has been proposed to evaluate the intrinsic response rate, and this ratio in La0.5Sr0.5CoO3is smaller than that in other reported materials. The low resistivity is thought to be responsible for the ultrafast response, as low resistivity induces small optical penetration depth, and response time has a monotonous increasing relationship with this depth.
We present metal wrap through (MWT) silicon solar cells with passivated surfaces based on a simplified device structure. This so‐called HIP‐MWT structure (high‐performance metal wrap through) does not exhibit an emitter on the rear side and therefore simplifies processing. The confirmed peak efficiency of the fabricated solar cells with an edge length of 125 mm, screen printed contacts and solder pads is 20.2%. To our knowledge, this is the highest value reported for large‐area p‐type silicon solar cells to date.
We show, using Density Functional Theory (DFT) calculations, that compressed AgF2 should turn above 17 GPa into a layered narrow‐gap material with a huge intralayer antiferromagnetic (AFM) coupling constant, reminiscent of those seen for parent copper (II) oxides (e.g., La2CuO4). Compressed AgF2 is thus the first candidate for the non‐oxocuprate two‐dimensional antiferromagnet. Calculations indicate that AgF2 could subsequently be metallised above 38 GPa, likely giving rise to superconductivity (SC).
The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.
