Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.
By means of first‐principles calculations we predict the stability of silicene as buckled honeycomb lattice on passivated substrates of group‐IV(111)1 × 1 surfaces. The weak van‐der‐Waals interaction between silicene and substrates does not destroy its linear bands forming Dirac cones at the Brillouin zone corners. Only very small fundamental gaps are opened around the Fermi level.
The fabrication of titania nanostructures with hierarchical order of different structural levels is investigated. The nanostructures are prepared with a diblock‐copolymer assisted sol–gel process. By iterative spin‐coating of the solution onto silicon substrates a thin polymer‐nanocomposite film is deposited and transformed to purely anatase titania nanostructures via calcination. In total, this procedure is repeated three times on top of the substrate. The approach is monitored with grazing incidence small angle X‐ray scattering after each fabrication step. With scanning electron microscopy the final hierarchical structure is imaged. From the characterization different structural levels are clearly identified.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution‐processed graphene oxide (GO) and n‐Si. Partially reduced GO with a high optical gap (2.8 eV) was spin‐coated on the n‐Si substrate and a heterojunction device was fabricated with the structure of Au/pr‐GO/n‐Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built‐in electric potential at the GO/n‐Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes.
The authors describe an organic complementary inverter with N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide as an n‐type semiconductor and pentacene as a p‐type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm2/Vs for an n‐type drive transistor and 0.57 cm2/Vs for a p‐type switch transistor. The gain of the inverter reached 125. Another inverter using Ta2O5 as a high κ gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V.
We present metal wrap through (MWT) silicon solar cells with passivated surfaces based on a simplified device structure. This so‐called HIP‐MWT structure (high‐performance metal wrap through) does not exhibit an emitter on the rear side and therefore simplifies processing. The confirmed peak efficiency of the fabricated solar cells with an edge length of 125 mm, screen printed contacts and solder pads is 20.2%. To our knowledge, this is the highest value reported for large‐area p‐type silicon solar cells to date.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.
We report on the photoconductance in two‐dimensional arrays of gold nanorods. The arrays are formed by a combination of droplet deposition and stamping methods. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons consistent with the excitation of the longitudinal surface plasmon resonance of the nanorods.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.
Interaction between negatively charged Nafion® and a positively charged polybenzimidazole‐decorated carbon nanotube leads to the formation of an ionic complex with high charge density for proton conduction, which can lead to an improvement in transport properties. Here we investigate the high‐temperature and low‐humidity proton conductivity of this nanocomposite membrane as a potential membrane for fuel cell applications.
Diffraction micro gratings have been written in ZnO:Al thin films using a picosecond laser operating at 355 nm. Micro gratings of 20 µm diameter with a period of 860 nm show a groove depth up to 120 nm. The total transmittance of square‐centimeter‐size grating‐textured ZnO:Al films was almost unchanged after grating formation, while the sheet resistance increased moderately. The textured films reached haze values of 9% at 700 nm. This simple texturing method can be applied also to ZnO:Al films that cannot be texture etched.
We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5–1.5 µm. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation.
Nanostructures formed in a titanium dioxide (TiO2)–poly(styrene)‐block‐poly(ethyleneoxide) nanocomposite film on top of fluor‐doped tin oxide (FTO) layers are investigated. The combinatorial approach is based on probing a wedge‐shaped FTO‐gradient with grazing incidence small angle X‐ray scattering (GISAXS) in combination with a moderate micro‐focus X‐ray beam. The characteristic lateral length is given by adjacent nanowire‐shaped TiO2 regions. It decreases from 200 nm on the thick FTO layer to 90 nm on the bare glass surface.
The metastability of the bixbyite‐ and corundum‐type In2O3 polymorphs up to 33 GPa (at room temperature) is shown. While compressed (in diamond anvil cells) and laser‐heated, both polymorphs undergo a phase transition to the Rh2O3‐II‐type structure (space group Pbcn, No. 60). The direct transition from bixbyite to Rh2O3‐II structure has not yet been observed for any other oxide.
We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high‐temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ～300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high‐temperature sneak current and tighter high‐temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.
