The Fe3O4(111)/graphene/Ni(111) trilayer is proposed to be used as an ideal spin‐filtering sandwich where the half‐metallic properties of magnetite are used. Thin magnetite layers on graphene/Ni(111) were prepared via successive oxidation of a thin iron layer predeposited on graphene/Ni(111) and the formed system was investigated by means of low‐energy electron diffraction and photoelectron spectroscopy. The electronic structure and structural quality of the graphene film sandwiched between two ferromagnetic layers remain unchanged upon magnetite formation as confirmed by experimental data.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
An original approach is proposed to study the magnetic phase separation phenomenon. It is based on the registration of the noise‐like FMR Fine Structure (FMR FS) caused by the magnetic interparticle dipole–dipole interaction between spatially separated ferromagnetic regions. Data obtained for a La0.7Pb0.3MnO3 single crystal point to the existence of spatially separated ferromagnetic regions. It is shown that FMR FS of the La0.7Pb0.3MnO3 single crystal is temperature reversible and disappears at the maximum of magnetoresistance.
The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.
Bulk polycrystalline La0.8Li0.2MnO3 is found to switch between a low‐resistance state and a high‐resistance state on thermal cycling. The low‐temperature, high‐resistance state exhibits strong electroresistance whereas the high‐temperature, low‐resistance state does not. The change in resistance between the two distinct states is of two orders of magnitude. It is proposed that the observed metastability may serve as the basis for resistive thermal‐switching devices.
In this Letter, a novel modified anodization was utilized to synthesize high‐aspect‐ratio, top‐open and ultraflat‐surface TiO2 nanotubes. The interruption of voltage during anodization leads to the formation of a double‐layered structure. Due to the weak mechanical connection between the upper and the underlying layer, the two parts can be easily detached. Compared with the conventional ultrasonication method to remove the clusters of nanotubes where rough surfaces resulted, this efficient and reliable strategy may facilitate further applications of TiO2 nanotubes in diverse conditions.
This Letter reports on the assembly on the tip of an optical fibre of a metamaterial film fabricated by a self‐assembly bottom‐up method, composed of silver nanowires embedded in an alumina matrix. By illuminating the film through the fibre in a reflection configuration, we observe experimentally the optical response of the metamaterial in agreement with theoretical predictions and interpreted as the excitation of surface plasmon‐polaritons in the cylindrical surface of the nanowires. These results pave the way for low‐cost optical fibre devices that incorporate metamaterial films.
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ～2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.
We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution‐processed graphene oxide (GO) and n‐Si. Partially reduced GO with a high optical gap (2.8 eV) was spin‐coated on the n‐Si substrate and a heterojunction device was fabricated with the structure of Au/pr‐GO/n‐Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built‐in electric potential at the GO/n‐Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes.
The efficiency of a photovoltaic cell is directly proportional to its open circuit voltage. This in turn is eventually set by the donor‐acceptor energy gap, i.e. the energy of the intermolecular charge‐transfer state in organic solar cells. In this letter we study diindenoperylene (DIP) as a new molecular acceptor. We show that planar heterojunctions of thiophene derivatives and DIP yield extraordinarily high open circuit voltages (Voc) of approximately 1.2 V for poly(3‐hexylthiophene) and almost 1.4 V for heat treated α‐sexithiophene. Those values are close to the maximum Voc attainable for these material systems.
We have shown that nitrophenyl groups may be added to the surface of few‐layer epitaxial graphene (EG) by the formation of covalent carbon–carbon bonds thereby changing the electronic structure and transport properties of EG from near‐metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning.
We present metal wrap through (MWT) silicon solar cells with passivated surfaces based on a simplified device structure. This so‐called HIP‐MWT structure (high‐performance metal wrap through) does not exhibit an emitter on the rear side and therefore simplifies processing. The confirmed peak efficiency of the fabricated solar cells with an edge length of 125 mm, screen printed contacts and solder pads is 20.2%. To our knowledge, this is the highest value reported for large‐area p‐type silicon solar cells to date.
A high‐efficiency bulk heterojunction organic photovoltaic cell (OPV) was achieved by the electrospray deposition method. The surface roughness of the P3HT:PCBM thin film can be reduced using the mixed solvent consisting of o‐dichlorobenzene (o‐DCB) and acetone. The effect of acetone concentration is related to its dielectric constant. Under an optimized concentration of acetone in o‐DCB (20 vol%), the P3HT/PCBM active layer with a smooth surface can be formed, and the power conversion efficiency of the OPV was 1.9%.
ZnO thin films were grown homoepitaxially on O‐face ZnO single crystals by pulsed‐laser deposition. The ZnO substrates grown by the hydrothermal method were heat‐treated in oxygen ambient at 1000 °C for 2 h prior to deposition. After the thermal treatment the substrates show bilayer steps between 200–400 nm wide terraces and a considerably improved crystalline structure. Thin film surfaces exhibit closed loop spirals and show steps of c /2 or c. The FWHM of the (0002) rocking curve of the best sample is 29″. Similar to the substrates used, Al is contained in the thin films (<1014 cm–3) as photoluminescence (PL) and thermal admittance spectroscopy suggest. However, deep levels between 200 and 400 meV below the conduction band are the dominant donors at room temperature. Low temperature PL is dominated by (Al0,X) (I6, FWHM: 200 µeV) and extremely homogeneous (σ ≈ 1%).
An improved power conversion efficiency (PCE) of bulk heterojunction organic photovoltaic cell (OPV) was achieved by inserting an n‐type [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) layer between the active layer and a metal electrode. The controlled substrate temperature was found to be a useful parameter for the multilayer structure (active layer/ PCBM) by the electrospray deposition method. Under optimized substrate temperature during the PCBM deposition, a multilayer structure could be formed, and the PCE was improved up to 1.94%.
The fabrication of titania nanostructures with hierarchical order of different structural levels is investigated. The nanostructures are prepared with a diblock‐copolymer assisted sol–gel process. By iterative spin‐coating of the solution onto silicon substrates a thin polymer‐nanocomposite film is deposited and transformed to purely anatase titania nanostructures via calcination. In total, this procedure is repeated three times on top of the substrate. The approach is monitored with grazing incidence small angle X‐ray scattering after each fabrication step. With scanning electron microscopy the final hierarchical structure is imaged. From the characterization different structural levels are clearly identified.
Lead carbonate chloride, Pb2CO3Cl2, known as mineral phosgenite, is introduced as a novel SRS‐active carbonate crystal with tetragonal symmetry. Under picosecond one‐micron laser pumping Raman‐induced χ(3)‐nonlinear generation in the near‐IR is observed. All recorded high‐order Stokes and anti‐Stokes sidebands are identified and attributed to two SRS‐promoting vibration modes with ωSRS1 ≈ 1062 cm–1 and ωSRS2 ≈ 86 cm–1.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.
