Photoinduced phenomena in mAs2S3·nAs2Se3 amorphous films and their application in micro-optics technology

Photoinduced phenomena, such as photodarkening, photorefraction, and photodissolution, were studied in different compositions of three-component mAs₂S₃·nAs₂Se₃ amorphous films. The main emphasis was on the effect of photoinduced change of dissolution rate since this effect is the basis of many applications of amorphous chalcogenide films. The results of the investigation were compared with photoinduced effects in binary As₂S₃ and As₂Se₃ films. Advanced micro-optical devices: micro-lens and micro-mirror arrays, diffractive gratings, and photonic bandgap crystals, based on three-component amorphous films which possessed optimal photodissolution characteristics were developed. The primary parameters of the micro-optical devices developed are discussed.     

Multiphonon absorption in As2S3As2Se3 glasses

Multiphonon absorption in As₂S₃ and As₂Se₃ glasses is well explained by a molecular model in terms of combination bands of high frequency vibrational modes of pyramidal AsY₃ and bent AsYAs groups (Y = SorSe). Multiphonon absorption coefficients in mixed As₂S₃As₂Se₃ glasses are nearly additive in terms of the pure components, suggesting a high degree of non-random mixing.     

Photoinduced phenomena in amorphous As<Subscript>4</Subscript>S<Subscript>3</Subscript>Se<Subscript>3</Subscript>–Sn films

We investigate the kinetics of photodarkening and recording of holographic diffraction gratings in amorphous As₄S₃Se₃ thin-film structures doped with tin (Sn) in concentrations of 0–10 at %. It is established that an increase in the Sn concentration leads to a decrease in the photodarkening rate and degree. The photodarkening kinetics is approximated by a stretched exponential function. It is found that an increase in the Sn concentration leads to a decrease in the transmission (photodarkening) variation in the investigated As₄S₃Se₃–Sn films. It is determined that, in the recording of holographic diffraction gratings at a Sn concentration of 3–8 at %, the As₄S₃Se₃–Sn films exhibit the maximum sensitivity and diffraction efficiency of the recorded gratings. It is shown that the dependence of diffraction efficiency on the As₄S₃Se₃ film thickness has the maximum at a film thickness of 4 µm.     

Spectral distribution of steady-state photoconductivity in amorphous As2Se3

The spectral distribution of steady-state photoconductivity has been examined for a series of bulk and evaporated samples of amorphous As₂Se₃. All bulk samples, irrespective of preparation technique or sample treatment, show a distinct shoulder in the photocurrent spectral distribution at energies near 1.4 eV. This feature is interpreted as spectroscopic evidence for the existence of a well-defined defect level in the gap of amorphous As₂Se₃. Evaporated As₂Se₃ films do not show any structure in the spectral response.     

Photoplasticity of As2Se3 films investigated with combined nanoindentation and AFM methods

Thin As₂Se₃ amorphous chalcogenide films have been studied by nanoindentation and atomic force microscopy in darkness and under illumination by band-gap light. The combination of these two methods has been used to study the peculiarities of the photoplastic effect in amorphous semiconductors. It has been shown by multiple loading indentation experiments that a non-linear mechanism of the formation of the strain response is realized in the As₂Se₃ films subjected to the combined action of light and external mechanical loading. We have observed that light illumination alters the internal friction of the films and their shear modulus. These observations have been considered in the frame of the two-phase model of chalcogenide glasses. Some arguments in favor that the self-organization processes take place in the structure of irradiated film are given.     

Hydrogenated chalcogenide glasses As2−xSe3+x and As2−xS3+x prepared by plasma decomposition

Amorphous semiconductors As_2?xSe_3+x and As_2?xS_3+x have been prepared by glow discharge decomposition of a gas mixture of AsH₃  H₂Se and AsH₃  H₂S respectively. The films contain about 3–8 at. percent hydrogen according to infrared transmission measurements. Both S-H and Se-H vibrational modes were observed. Results of the D.C. electrical conductivity, X-ray structural analyses and optical absorption are presented. The films composition was found to be close to $\text{As:Se = As:S}\text{=}\text{2}\text{3}$.     

Effect of age in vitreous As2Se3 thin films

In this paper are reported the studies of structural changes developed in the photoconductivity response spectrum of amorphous As₂Se₃ thin films with their age. Thin films were prepared by the thermal evaporation of amorphous As₂Se₃. Also reported are the X-ray diffraction studies. An explanation of the phenomenon in terms of structural changes has been attempted.     

Influence of fine-grained vanadium-based layers on the photoresponse multiplicity in structures with amorphous As2Se3 films

The fabrication of vanadium-based fine-grained structures including those with a branched (fractal) surface is described. The application of amorphous As₂Se₃ films on these fractal surfaces is shown to increase the multiplicity of photoresponse from the structure.     

Study of the dynamics and mechanisms of deformation of thin chalcogenide As(Ge)<Subscript>2</Subscript>Se<Subscript>3</Subscript> films by nanoindentation

The mechanical properties of As₂Se₃ and Ge₂Se₃ thin films have been studied by the method of quasi-static nonoindentation. The mechanisms of formation and recovery of the indentations in the studied materials have been analyzed under conditions of their local loading. It has been revealed that the deformation mechanism of the chalcogenide films changes in going from As₂Se₃ to Ge₂Se₃. It has been found that, during deformation of the As₂Se₃ film under the indenter, the accumulation of plastic deformation prevails, and, for the Ge₂Se₃ film, the substantial mechanism is the relaxation of its deformation.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

Experimental study and configurational-coordinate model for photo-induced effects in amorphous As2Se3 films

The optical absorption of As₂Se₃ thin films is studied in the UV–VIS spectral range and the value of the optical energy gap is determined. The effect of photo-irradiation on the optical absorption and transmission of thin film samples is also investigated. The optical energy gap was found to decrease with photo-irradiation time. The results of photo-irradiation are discussed in correlation with the structural aspects of As₂Se₃. A model is proposed to account for the structural changes, resulting from photo-irradiation, causing the decrease of the energy gap. The effect of γ-radiation on the optical absorption of As₂Se₃ thin films was studied also and no detectable effect on the value of the optical energy gap was observed.     

Anomalous X-ray scattering studies on superionic glassy (As2Se3)-(AgX) systems (X = halides)

Anomalous X-ray scattering experiments for glassy room-temperature superionic conductors (As₂Se₃)_0.4 (AgI)_0.6 and (As₂Se₃)_0.4(AgBr)_0.6 were performed close to the As, Se, Ag, and Br K edges using a third-generation synchrotron radiation facility, ESRF. The differential structure factors, Δ_iS(Q), were obtained from detailed analyses, indicating that Δ_AsS(Q) and Δ_SeS(Q) of both the glassy superionic semiconductors are similar to those of glassy As₂ Se₃ except the prepeak in Δ_SeS(Q). The Δ_AgS(Q) spectrum of (As₂Se₃)_0.4 (AgI)_0.6 looks molten salt-like. However, the Δ_Ag S(Q) of (As₂Se₃)_0.4(AgBr)_0.6 glass have quite different features from that of (As₂Se₃)_0.4 (AgI)_0.6 glass in the low Q range, and the Δ_BrS(Q) has even a pre-shoulder around 13 nm^? 1 unlike molten salts. In the differential pair distribution functions Δ_ig(r) obtained from the Fourier transforms of Δ_iS(Q), the first peaks of Δ_Asg(r) and Δ_Seg(r) show no correlation with those of Δ_Agg(r) and Δ_Brg(r), and vice versa. From these results, it can be concluded that a pseudo-binary mixture of the As₂Se₃ network matrix and AgX-related ionic conduction pathways is a good structural model for these superionic glasses. Differences between the AgBr- and AgI mixtures were found in the second-neighbor structures around the Ag atoms, which may reflect those in the crystal structures of the AgX salts.     

Quantum efficiency of light-induced defect creation in hydrogenated amorphous silicon and amorphous As2Se3

The quantum efficiency (QE) of light-induced metastable defect creation in hydrogenated amorphous silicon (a-Si?:?H) and amorphous As₂Se₃ (a-As₂Se₃) by bandgap and subgap illumination has been deduced from photocurrent measurements. The QE decreases with increasing number of absorbed photons. A higher QE for a-As₂Se₃ than for a-Si?:?H has been observed and this is interpreted in terms of the higher structural flexibility of a-As₂Se₃. We have also found that, for both materials, subgap illumination yields a higher QE than does bandgap illumination.     

硫系非晶半导体薄膜中的超快光 Kerr效应

利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As₂S₃, As₂Se₃, GeS₂, GeSe₂, Ge₂₀As₂₅S₅₅, Ge₂₀As₂₅Se₅₅, Ge₁₀As₄₀S_{20关键词： 全光开关 硫系非晶半导体薄膜 飞秒激光超外差光Kerr(OHD-OKE) 三阶非线性}     

Reversible photo-induced volume changes in evaporated As2S3 and As4Se5Ge1 films

Reversible photo-induced volume changes have been observed accompanying reversible optical absorption edge shift produced by successive cycles of band gap illumination and annealing for well-annealed evaporated As₂S₃ and As₄Se₅Ge₁ films. The As₂S₃ film shows an increase in its volume by illumination, while As₄Se₅Ge₁ film shows a decrease. Qualitative discussion has been given in connection with pressure-induced optical constant change.     

Linear Phase Shift Response with High Dynamic Range for Holographic Recording in As2S3

Amorphous As₂S₃ films are real-time photographic materials for phase holograms. This work focuses on the phase shift in As₂S₃ films as a function of the exposure. A method for measuring the phase shift response and the exposure simultaneously is presented. A relative displacement determination of interferometric patterns allows precise measurements insensitive to changes of experimental conditions. The phase shift dependence on the intensity of the writing beam is evaluated for two different films. As a result, a linear phase shift response is obtained with a dynamic range of nearly n. It is independent of the intensity over four orders of magnitude. The results are proofed by diffraction efficiency measurements.     

Thermal conductivity of amorphous As2Se3 with copper

Phonon thermal conductivity of amorphous As₂Se₃ with the content of copper is studied in the temperature range between 100 and 300°K. The mean free path of phonons is calculated and using the measured values of the velocity of the longitudinal acoustic waves, microhardness, softening temperature and of the density, the possibility of the arrangement of the basic structure units of the semiconducting As₂Se₃ glass is discussed.Thanks are due to Mrs J. Trepeová for the measurement of the thermal conductivity of the samples.     

Photo-induced dynamical changes in amorphous As2S3 films

Optical properties of amorphous As₂S₃ films, which have been illuminated well by bandgap light in advance, can be changed dynamically by exposing to less-bandgap light. This dynamical change has been studied in connection with its plausible relation to the reversible photo-induced change. It has been found that these changes have intimate connections with each other, and can be explained by a certain configurational diagram in a coherent fashion.     

Giant photoinduced optical bleaching at room and liquid helium temperatures in Sb/As2S3 multilayered films

We report the observation of giant photo induced optical bleaching in Sb/As₂S₃ multilayered film at room and liquid He temperatures, when irradiated with 532 nm laser at moderate intensities. The experimental results show a dramatic increase in transmittance near the band gap regime at both the temperatures; however the rates at which transmission change occurs are rather slow at low temperature. The huge change in transmission is due to the photo induced intermixing of As₂S₃ layer with Sb. Our XPS measurements show that photo induced intermixing occurs through the wrong homopolar bonds, which under actinic light illumination are converted into energetically favored hetropolar bonds.     

Effect of nonlinear refraction and two-photon absorption on the optical limiting in amorphous chalcogenide films

This paper reports on the results of investigations into the nonlinear optical characteristics of chalcogenide films (As₂S₃, As₂₀S₈₀, 2As₂S₃/As₂Se₃, 3As₂S₃/As₂Se₃). The nonlinear refractive indices and two-photon absorption coefficients for these films are measured using the Z-scan technique at wavelengths of a picosecond Nd: YAG laser (λ=1064 and 532 nm). The optical limiting due to Kerr-type nonlinearities is analyzed.