Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Mn Nanowhiskers of a Novel Hexagonal Phase Grown from Hydrogen Activated Laves Phase Alloys

With the aid of hydrogenation/dehydrogenation, nanorod whiskers of transition metal Mn can grow spontaneously from Zrl_xTi~MnCr Laves phase alloys at room temperature. The finding introduces a distinguishingly different element into metal whisker family, and provides a potential technique for fabrication of one-dimensional metal nanostructures. Moreover, it is found that the segregated Mn in whiskers forms a novel hexagonal structure, which partially fulfills the long predicted allotropic form and adds more complexity to the structures of Mn.     

Catalyst formation at various temperatures by hydrogen radical treatment and synthesis of silicon nanowires

Metal nanocrystals as catalyst from a metal oxide film were fabricated at various temperatures after hydrogen radical treatment and great quantities of silicon nanowires (SiNWs) were successfully synthesized using the hydrogen microwave afterglow deposition method. Indium (In) metal nanocrystals with size of about 12 nm were obtained from indium oxide film after hydrogen radical pre-treatment for 5 min at 400 °C and their quantity reached approximately 3 × 10¹⁰ cm⁻². Subsequently, a numerous SiNWs were grown with the crystal diffraction of (1 1 1), (2 2 0) and (3 1 1). The diameters of the SiNWs mainly ranged from 5 to 120 nm and their lengths extended to about 8.5 μm.     

Positron lifetime study of vacancy-type defects in amorphous and polycrystalline nanometer-sized alumina

2 O₃ and nanocrystalline Al₂O₃ specimens. The short-lifetime (170±20 ps), intermediate-lifetime (410±20 ps) and long-lifetime components correspond to three different kinds of defects: monovacancy-like free volumes, microvoids, and larger voids. The appearance of lifetimes in the range 1–5 ns indicates the formation of positronium. The influence of thermal annealing from 873 K to 1373 K on positron lifetime parameters was also analyzed. The components with lifetimes τ₁=170 ps and τ₂=410 ps persisted even after the grains had grown to 100 nm in size, while the long-lifetime component declined significantly when grain sizes exceeded 10 nm. The interface characteristics of polycrystalline nano-Al₂O₃ prepared by the two methods were compared by analyzing the variations of the positron-lifetime parameters with grain growth. Received: 1 April 1997/Accepted: 13 August 1997     

Catalysed growth of novel aluminium oxide nanorods

Micron-scale coral-like aluminium oxide structures have been generated by heating a mixture of AlB₂ and Co powders in a quartz boat at ca. 1050 °C under N₂. Upon sonication in acetone, the structures break down into elongated single-crystal aluminium oxide nanorods ranging from 20 to 200 nm in diameter and up to 5 μm in length. Single Co particles are often found attached to nanorod tips. A vapour–liquid–solid (V–L–S) mechanism appears to be responsible for the aluminium oxide nanorod growth. Received: 21 January 2003 / Accepted: 22 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. E-mail: d.walton@sussex.ac.uk     

Thinning and diluting aligned carbon nanotube films for uniform field emission

Aligned carbon nanotube (CNT) films are potential field emitters for large-area flat panel displays. However, the distribution of emission areas in the CNT films is quite non-uniform because of inhomogeneous nanotube growth, which is hard to avoid using the conventional chemical vapor deposition (CVD) method. Here we show that the emission uniformity of CNT films can be improved simply by reducing the film thickness (thinning) or the nanotube density (diluting). The thickness and density of CNT films could be controlled by controlling the CNT growth time and temperature. Received: 12 June 2001 / Accepted: 27 October 2001 / Published online: 23 January 2002     

Large-scale synthesis of GaN nanorods and their photoluminescence

Large quantities of gallium nitride (GaN) nanorods have been synthesized via direct reaction of metallic gallium vapor with flowing ammonia at 970 °C in a quartz tube. The nanorods have been confirmed as crystalline wurzite GaN by powder X-ray diffraction, selected-area electron diffraction and X-ray photoelectron spectrometry. Transmission electron microscopy and scanning electron microscopy reveal that the nanorods are straight and uniform, with diameters ranging from 40 nm to 150 nm and lengths up to hundreds of micrometers. The growth mechanism is discussed briefly. Photoluminescence measurements on bulk GaN nanorods at room temperature show two strong peaks at 377 nm (3.28 eV) and 360 nm (3.44 eV) attributed to the zero-phonon donor-acceptor pair transition and the donor-bound exciton, respectively. Received: 19 April 2001 / Accepted: 10 May 2001 / Published online: 20 June 2001     

Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

Nanocrystalline boron and phosphorus doped silicon particles were produced in a microwave reactor, collected, and dispersed in ethanol. Pulsed laser annealing of spin‐coated films of these particles resulted in p‐ and n‐type conductive layers on flexible substrates if a threshold laser energy density of 60 mJ/cm² was exceeded. The thermopower of the laser sintered layers exhibits a distinct maximum at a doping concen‐ tration around 10¹⁹ cm^–3 for both boron and phosphorus doping with an absolute value of the Seebeck coefficient of about 300 µV/K. Since the thermal conductivity of the layers is reduced by nearly the same factor compared to bulk crystalline silicon as the electrical conductivity, these results are promising for the application of such nanocrystalline layers in thin film thermoelectric devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Violet luminescence in Ge nanocrystals/Ge oxide structures formed by dry oxidation of polycrystalline SiGe

Nanocrystals of Ge surrounded by a germanium oxide matrix have been formed by dry thermal oxidation of polycrystalline SiGe layers. Violet (3.16 eV) luminescence emission is observed when Ge nanocrystals, formed by the oxidation of the Ge segregated during the oxidation of the SiGe layer, are present, and vanishes when all the Ge has been oxidized forming GeO₂. Based on the evolution of the luminescence intensity and the structure of the oxidized layer with the oxidation time, the recombination of excitons inside the nanocrystals and the presence of defects in the bulk oxide matrix are ruled out as sources of the luminescence. The luminescence is attributed to recombination in defects at the Ge sub-oxide interface between the Ge nanocrystals and the surrounding oxide matrix, which is GeO₂.     

Influence of Surface Quenching Effects on Luminescent Dynamics of ZnS：Mn^2＋ Nanocrystals

A model describing surface quenching of isolated ion centres in nanocrystals is proposed based on the energy transfer between the doped ions and the nanocrystalline surface quenching centres. The quenching rate depends on the position of the ions in the nanocrystal, hence the decay curve under non-selective excitation is generally nonexponential. The decay curve calculated with this model is in good agreement with that of the ^4T1→^6A1 emission in ZnS：Mn^2＋ nanocrystals.     

Growth of carbon nanofibers on aligned zinc oxide nanorods and their field emission properties

Carbon nanofibers were grown by electrodeposition technique onto aligned zinc oxide (ZnO) nanorods deposited by hybrid wet chemical route on glass substrates. X-ray diffraction traces indicated very strong peak for reflections from (0 0 2) planes of ZnO. The Raman spectra were dominated by the presence of G band at about 1597 cm⁻¹ corresponding to the E_2g tangential stretching mode of an ordered graphitic structure with sp² hybridization and a D band at about 1350 cm⁻¹ originating from disordered carbon. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peak at ∼511 cm⁻¹ for Zn-O stretching mode. Photoluminescence spectra indicated band edge luminescence of ZnO at ∼3.146 eV along with a low intensity peak at ∼0.877 eV arising out of carbon nanofibers. Field emission properties of these films and their dependence on the CNF coverage on ZnO nanorods are reported here. The average field enhancement factor as determined from the slope of the FN plot was found to vary between 1 × 10³ and 3 × 10³. Both the values of turn-on field and threshold field for CNF/ZnO were lower than pure ZnO nanorods.     

Gold Nanobelt Reorientation by Molecular Dynamics Simulation

The embedded atom method is used to study the structure stability of gold nanobelt. The Au nanobelts have a rectangular cross-section with （100） orientation along the x^-,γ- and z-axes. Free surfaces are used along the x- and y-directions, and periodic boundary condition is used along z-direction. The simulation is performed at different temperatures and cross-section sizes. Our results show that the structure stability of the Au nanobelts depends on the nanobelt size, initial orientation, boundary conditions and temperature. A critical temperature exists for Au nanobelts to transform from initial （100） nanobelt to final （110） nanobelt. The mechanism of the reorientation is the slip and spread of dislocation through the nanobelt under compressive stress caused by tensile surface-stress components.     

Optical Properties of Hexagonal and Cubic ZnS Nanoribbons: Experiment and Theory

Optical properties of hexagonal and cubic ZnS nanoribbons are studied by using valence electron energy loss spectroscopy （VEELS） and ab initio band structure calculations. The peaks in VEELS are assigned to interband transitions by comparing the interband transition strengths with the calculated densities of states. The optical properties are deduced from the experimental VEELS, and the theoretical calculations give consistent results. This combination of experimental and theoretical approaches provides a comprehensive understanding of the optical properties of polytype ZnS.     

Area-selectively sputtering the RuO2 nanorods array

The RuO₂ nanorods array is grown selectively on the SiO₂-patterned sapphire (SA) wafers using reactive sputtering. The area-selectivity is attributed to an early nucleation of RuO₂ and its fast surface coverage on SA (1 0 0) and (0 1 2), in contrast to the sluggish nucleation on glassy SiO₂ in the initial sputtering period. The growth domain is explored by investigating the temperature windows at sputtering power 40, 50, and 60 W. The low-temperature bound is limited by the mobility of precursors on SiO₂ surface, which enables the precursors to depart before aggregating into a large size to smear the non-growth region. The high-temperature bound is set by the horizontal growth which enlarges the rod width and deteriorates its one-dimensional feature. The temperature window shrinks with increasing sputtering power. The X-ray photoelectron spectra indicate the as-sputtered rod surface is ruthenium rich. The X-ray diffraction analysis shows that RuO₂ growth on SA (1 0 0) and (0 1 2) follows the epitaxial relations between RuO₂ and SA crystals.     

Fabrication and observation of nanowire-assemblages of Si-Ge

A few of the interesting structures made by the assemblage of Si-Ge nanowires fabricated by the floating-zone melting-vapor method have been observed. They reveal shapes that are similar to coral, jellyfish and sea anemones. The pre-sintered substrate bar has some large crystalline particles (1–15 μm), which produce sites that are energetically predisposed to nucleation. The peculiar structures created by the assemblage of Si-Ge nanowires form on favored nucleation sites that consist of numerous bundles of nanowires with diameters of 20–50 nm. The periodic variation in the diameter of the bundles of nanowires is a common feature of these structures. In addition, a growth mechanism assisted by the coexistence of Ge and Si-Ge oxides is suggested. The growth process of these assemblages opens up new possibilities for the study of the growth mechanism of Si-Ge nanowires. Received: 25 July 2002 / Accepted: 9 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: 81-298/59-2736, E-mail: HU.Quanli@nims.go.jp     

Internal Friction of Bend-Deformed Nanocrystalline Nickel by Mechanical Spectroscopy

Internal friction of nanocrystalline nickel is investigated by mechanical spectroscopy from 360 K to 120 K. Two relaxation peaks are found when nanocrystalline nickel is bent up to 10% strain at room temperature and fast cooling. However, these two peaks disappear when the sample is annealed at room temperature in vacuum for ten days. The occurrence and disappearance of the two relaxation peaks can be explained by the interactions of partial dislocations and point defects in nanocrystalline materials.     

Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

High-quality relaxed SiGe films on Si (0 0 1) have been demonstrated with a buffer layer containing modified SiGe (m-SiGe) islands in ultra-high vacuum chemical vapor deposition (UHV/CVD) system. The m-SiGe islands are smoothened by capping an appropriate amount of Si and the subsequent annealing for 10 min. This process leads to the formation of a smooth buffer layer with non-uniform Ge content. With the m-SiGe-dot multilayer as a buffer layer, the 500-nm-thick uniform Si_0.8Ge_0.2 layers were then grown. These m-SiGe islands can serve as effective nucleation centers for misfit dislocations to relax the SiGe overlayer. Surface roughness, strain relaxation, and crystalline quality of the relaxed SiGe overlayer were found to be a function of period's number of the m-SiGe-dot multilayer. By optimizing period number in the buffer, the relaxed Si_0.8Ge_0.2 film on the 10-period m-SiGe-dot multilayer was demonstrated to have a threading dislocation density of 2.0 × 10⁵ cm⁻² and a strain relaxation of 89%.     

Ion implantation inducing nanovoids characterized by TEM and STEM

The evolution of nanoparticles in sequentially ion-implanted Ag and Ag/Cu into silica glasses has been studied. The doses for implantation (×10¹⁶ ions/cm²) were 5Ag, 5Ag/5Cu and 5Ag/15Cu. Ag nanoclusters have been formed in the implanted 5Ag specimen. In the implanted 5Ag/5Cu specimen, some formed nanoclusters have brighter center features. With an increase of Cu ions dose, the nanoclusters with brighter center features become prevalent. The microstructural properties of the nanoparticles are characterized by transmission electron microscopy. Scanning transmission electron microscope high-angle annular dark field and high-resolution transmission electron microscopy are also utilized to study the formed nanoparticles. The results show that nanovoids have been induced into metal nanoparticles during the ion implanting process, not the core-shell nanoparticles as other workers believed. The nanovoids can be the aggregation of vacancies induced by irradiation.     

Enhanced optical and field emission properties of CTAB-assisted hydrothermal grown ZnO nanorods

We have developed a simple N-cetyl-N,N,N-trimethyl ammonium bromide (CTAB)-assisted hydrothermal route for the production of ZnO one-dimensional (1D) nanostructures on zinc foil at reaction temperature of 160 °C. With the increase of CTAB concentration, the one-dimensional structures change from microrod to a mixture of nano- and microrod and finally to nanorods. X-ray diffraction studies confirmed the proper phase formation of the grown nanostructures. The room temperature photoluminescence spectra showed that ZnO nanostructures prepared with increased CTAB concentration exhibited enhanced band edge UV emission and also blue shift of the emission peak. All the samples show no defect related green emission. Field emission property of the 1D structures has been investigated in detail. By tuning the CTAB concentration, the field emission property was optimized. The nanorods synthesized with high CTAB showed turn-on and threshold fields of 3.2 and 5 V/μm, respectively, which are comparable to the values for vapour phase synthesized high field emitting ZnO nanostructures.     

Positron annihilation in vacancies at grain boundaries in metals

The behavior of vacancies in selected coherent grain boundaries (GBs) in Fe and Ni is studied by means of molecular dynamics simulations. Corresponding positron lifetimes are calculated using the atomic superposition method. There is a difference between the vacancy behavior in Fe and Ni in dependence on temperature. In Ni, vacancies at GBs appear to diminish substantially their free volume (and lifetime) with the increasing temperature, which can be attributed to ‘vacancy delocalization’. Contrary, GB vacancies remain stable up to apparently higher temperatures in Fe.