Structural phase transition behaviour of ZnaSb3 and its substitutional compounds （Zn0.98M0.02）4Sb3 （M = Al,Ga and In） at low temperatures

Structural phase transitions of Zn4Sb3 and its substitutional compounds (Zn0.98M0.02)4Sb3 (M = Al, Ga and In) are investigated by electrical transport measurement and differential scanning calorimetry below room temperature. The results indicate that both β→α and α→α′ phase transitions of Zn4Sb3 are reversible and exothermic processes, which may be explained as that both the transitions originate from the ordering of the disordered interstitial Zn and vacancies in regular sizes. The derived activation energies of β→α and α→α′ phase transition processes for Zn4Sb3 are E1 = 3.9 eV and E2 = 4.1 eV, respectively. Although no remarkable influence on activation energy E2 is observed after Al doping, Al substitution for Zn causes E1 to increase to 4.6 eV, implying its suppression of βα transition to a great extent. Moreover, it is found that both βα and αα′ transitions are completely prohibited by substitution of either In or Ga for Zn in Zn4Sb3. The underlying mechanisms for these phenomena are discussed.     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn₄Sb₃以及含有过量Zn的β-Zn₄Sb₃块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率，研究了β-Zn₄Sb₃化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn₄Sb₃的晶界上，随着Zn含量增加，材料电导率和热导率上升，Seebeck系数下降，Zn第二相的引入能有效提高材料的功率因子，Zn过量2at%的材料在700K时其ZT值达到1.10. 关键词： 4Sb₃')" href="#">β-Zn₄Sb₃ 电导率 Seebeck系数     

In‐situ X‐ray diffraction of mechanically milled β‐Al3Mg2 powders

The structure evolution during heating of mechanically milled single‐phase β‐Al₃Mg₂ has been investigated by in‐situ X‐ray diffraction. The nanoscale supersaturated Al(Mg) solid solution formed during milling transforms back to the original β‐Al₃Mg₂ phase through a sequence of phase transformations. At low temperatures, an increasing amount of Mg is rejected from the solid solution with increasing temperature. At intermediate temperatures, the β′‐phase, a hexagonal phase with approximate composition Al₃Mg₂, forms. Finally, at higher temperatures the original β‐Al₃Mg₂ phase is restored, indicating that the formation of the supersaturated solid solution during milling can be reversed by appropriate heat treatment. The phase transformations during heating are gradual and the temperature ranges of stability of the different structure configurations are quite large, all exceeding 50 K. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic,electronic and structural properties of ZnxFe3−xO4

A series of samples Zn_xFe_3−xO₄ have been prepared by the chemical coprecipitation technique and characterized by X-ray diffraction (XRD), vibrating sample magnetometry (VSM) and X-ray photoelectron spectroscopy (XPS). XRD demonstrates all the samples of Zn_xFe_3−xO₄ have a spinel structure same as Fe₃O₄. The magnetic hysteresis loops of Zn_xFe_3−xO₄ obtained from VSM indicate that the saturation magnetization has a maximum when x is ∼1/3. The chemical states of Fe atoms and Zn atoms in zinc ferrites have been measured using XPS and Auger electron spectroscopy (AES). The Fe 2p core-level XPS spectra and Zn L₃M₄₅M₄₅ Auger peaks have been analyzed and the results have been discussed in correlation with the samples’ magnetic properties. These results suggest most of Zn atoms occupy the tetrahedral sites and a small amount of them occupy the octahedral sites.     

Structural,electrical and optical properties of Cd1−xZnxO thin films and alloying effects on Kβ/Kα intensity ratios

Cd_1?xZn_xO thin films were prepared by spray pyrolysis in air atmosphere on a glass substrate at 250 °C. The Zn content in Cd_1?xZn_xO films was varied from x = 0 to 0.60. Structural, electrical and optical properties of Cd_1?xZn_xO films were investigated by x‐ray diffraction, electrical resistivity and optical transmittance spectra, respectively. As the Zn content in Cd_1?xZn_xO thin films increased, the preferred orientation of the films did not change, only the peak intensity of the planes decreased. In addition to the peaks of CdO, peaks of ZnO were observed in the film with x = 0.6. The resistivity of Cd_1?xZn_xO thin films increased with increasing Zn content. Transmittance spectra studies of films were carried out in the 190‐1100 nm wavelength range and the results showed that the bandgap energy range varied from 2.42 to 3.25 eV. In addition, alloying effect on the Kβ/Kα intensity ratio in Cd_1?xZn_xO semiconductor thin films was studied. It was found that the Kβ/Kα intensity ratio is changed by alloying effects in Cd_1?xZn_xO semiconductor thin films for different composition of x. The results were compared with the theoretical values. Copyright © 2006 John Wiley & Sons, Ltd.     

A Combined Experimental and Theoretical Study on the Formation of Ag Filaments on β‐Ag2MoO4 Induced by Electron Irradiation

A combined experimental and theoretical study is presented to understand the novel observed nucleation and early evolution of Ag filaments on β‐Ag₂MoO₄ crystals, driven by an accelerated electron beam from an electronic microscope under high vacuum. The growth process, chemical composition, and the element distribution in these filaments are analyzed in depth at the nanoscale level using field‐emission scanning electron microscopy (FE‐SEM) and transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) characterization. To complement experimental results, chemical stability, structural and electronic aspects have been studied systematically using first‐principles electronic structure theory within a quantum theory of atoms in molecules (QTAIM) framework. The Ag nucleation and formation on β‐Ag₂MoO₄ are a result of structural and electronic changes of the AgO₄ tetrahedral cluster as a constituent building block of β‐Ag₂MoO₄, consistent with Ag metallic formation. The formation of Ag filament transforms the β‐Ag₂MoO₄ semiconductor from n‐ to p‐type concomitant with the appearance of Ag defects.     

Surface morphology and growth mechanism of catalyst‐free ZnO and Mgx Zn1–x O nanorods

High‐resolution transmission electron microscopy was employed to investigate morphologies and catalyst‐free growth mechanism of ZnO/Mg_x Zn_1–x O ‘multi‐quantum well’ and ‘core‐shell’ nanorod heterostructures as well as ZnO nanorods. The one‐dimensional growth mechanism and the hexagonal faceting of ZnO nanorod were explained by the surface energy anisotropy. The morphology change by alloying with Mg was successfully explained by investigating the energy gain by adatom adsorption and the reduction in the surface energy anisotropy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Superconductivity induced phonon anomalies in the Raman spectra of Zn and Ni doped YBa2Cu3O7

Here we present Raman spectra of YBa₂(Cu_1–x Zn _x )₃O₇ and YBa₂(Cu_1–x Ni _x )₃O₇ as a function of temperature and Zn or Ni content. The temperature dependence of two modes at 340 and 440 cm^–1 is analyzed. Similarly to the infrared measurements it is found that Zn substantially suppresses the superconductivity induced phonon softening whereas, Ni does not affect much that effect. Moreover, the superconductivity induced phonon stiffening of the 440 cm^–1 mode completely disappeared with the Zn doping. We find this behaviour might support the model where Zn acts effectively as a magnetic pair breaker.     

High‐gain Zn1–xMgx O‐based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates

We report the fabrication and characterization of highly responsive ZnMgO‐based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM) configuration for solar‐blind/visible‐blind optoelectronic application. MSM devices were fabricated from wurtzite Zn_1–xMg_x O/ZnO (x ～ 0.44) thin‐film heterostructures grown on sapphire (α‐Al₂O₃) substrates and w‐Zn_1–xMg_x O (x ～ 0.08), grown on nearly lattice‐matched lithium gallate (LiGaO₂) substrates, both by radio‐frequency plasma‐assisted molecular beam epitaxy (PAMBE). Thin film properties were studied by AFM, XRD, and optical transmission spectra, while MSM device performance was analyzed by spectral photoresponse and current–voltage techniques. Under biased conditions, α‐Al₂O₃ grown devices exhibit peak responsivity of ～7.6 A/W at 280 nm while LiGaO₂ grown samples demonstrate peak performance of ～119.3 A/W, albeit in the UV‐A regime (～324 nm). High photoconductive gains (76, 525) and spectral rejection ratios (～10³, ～10⁴) were obtained for devices grown on α‐Al₂O₃ and LiGaO₂, respectively. Exemplary device performance was ascribed to high material quality and in the case of lattice‐matched LiGaO₂ films, decreased photocarrier trapping probability, presumably due to low‐density of dislocation defects. To the best of our knowledge, these results represent the highest performing ZnO‐based photodetectors on LiGaO₂ yet fabricated, and demonstrate both the feasibility and substantial enhancement of photodetector device performance via growth on lattice‐matched substrates. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Mössbauer study of Zn x Ni5/3−x Fe1Sb1/3O4 spinel ferrite

The antimony substituted nickel ferrite Zn_xNi_5/3–xFe₁Sb_1/3O₄ with different values ofx are prepared, checked by x-ray and studied with⁵⁷Fe Mössbauer spectroscopy over a wide temperature range. Characteristic spectra of paramagnetic, magnetic and electronic relaxation types for the different compositions have been observed. The interpretation of the spectra allows the cation distribution of the compounds to be deduced. The Mössbauer effect parameters at different temperatures are calculated and their dependence on the substitution of non-magnetic Zn⁺² for the magnetic nickel ions are discussed. The temperature dependence of the hyperfine magnetic fields and the respective Néel temperature points are obtained.     

Polarized Raman scattering in helimagnetic β‐MnO2

A rutile β‐MnO₂ film was grown on MgO substrate using plasma‐assisted molecular beam epitaxy (PAMBE) monitored by reflection high‐energy electron diffraction (RHEED). Polarized Raman spectra at various temperatures were obtained to investigate the influence of the helimagnetic structure on the vibrational modes of β‐MnO₂. A red shift of E_g modes indicates a gradual formation of spin angles between neighboring Mn⁴⁺ ions. The intensities of the E_g and A_1g modes with y‐polarized incidence increase remarkably below the Néel temperature. A new view as vibrational mode projection (VMP) indicates the interactions between the magnetic component of incident light and the helimagnetic structure. Copyright © 2008 John Wiley & Sons, Ltd.     

Piezoresponse imaging and local characterization of ferroelectric domains in Pb(Zn1/3Nb2/3)O3–7%PbTiO3 single crystals

Ferroelectric domain structures of (001)‐oriented Pb(Zn_1/3Nb_2/3)O₃–7%PbTiO₃ (PZN‐7%PT) single crystals were visualized and characterized by piezoresponse force microscopy (PFM). Locally regular domain configurations are found to be possibly related to the stable macroscopic properties in the PZN‐7%PT single crystals. Nanoscale piezoresponse hysteresis loops measured by PFM tip revealed no evidence of local domain switching behavior in the PZN‐7%PT single crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Raman spectroscopy of Cu doping in Zn1−xCoxO diluted magnetic semiconductor

The room‐temperature ferromagnetism and the Raman spectroscopy of the Cu‐doped Zn_1−xCo_xO powders prepared by the sol–gel method are reported. The x‐ray diffraction (XRD) data confirmed that the wurtzite structure of ZnO is maintained for ZnO doped with Co below 10 at%. The magnetization–field curves measured at room temperature demonstrated that all Co‐doped ZnO powders were paramagnetic. Ferromagnetic ordering is observed for the samples doped with Cu in Zn_0.98Co_0.02O and strongly depends on the concentration of Cu. The relative strength of the second‐order LO peak to the first‐order one in the Raman spectra, which is related to the carrier concentration, of the Cu‐doped Zn_0.98Co_0.02O powder is strongly correlated with the saturation magnetic moment of the system. This seems to be in favor of the Ruderman‐Kittel‐Kasuya‐Yosida (RKKY) or double exchange mechanism of the ferromagnetism in this system. Copyright © 2009 John Wiley & Sons, Ltd.     

Spectroscopic and structural investigations of α‐, β‐, and γ‐AlH3 phases

With its reputation as a high‐energy density fuel, aluminum hydride (AlH₃) has received renewed attention as a material that is particularly suitable, not only for hydrogen storage but also for rocket propulsion. While the various phases of AlH₃ have been investigated theoretically, there is a shortage of experimental studies corroborating the theoretical findings. In response to this, we present here an investigation of these compounds based primarily on two research areas in which there is the greatest scarcity of information in the literature, namely Raman and infrared (IR) absorption analysis. To the authors' knowledge, this is the first report of experimental far‐IR absorption results on these compounds. Two different samples prepared by broadly similar ethereal reactions of AlCl₃ with LiAlH₄ were analyzed. Both Raman and IR absorption measurements indicate that one sample is purely γ‐AlH₃ and that the other is a mixture of α‐, β‐, and γ‐AlH₃ phases. X‐ray diffraction confirms the spectroscopic findings, most notably for the β‐AlH₃ phase, for which optical spectroscopic data are reported here for the first time. Copyright © 2010 John Wiley & Sons, Ltd.     

Reduced anti-ferromagnetism promoted by Zn 3d substitution at CuO2 planar sites of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ superconductors

The role of charge carriers in ZnO₂/CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−yZn_yO_12−δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d¹⁰ (S=0) substitution at Cu 3d⁹ sites in the inner CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu₄O_12−δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron–phonon interaction has an essential role in the mechanism of high-T_c superconductivity in these compounds.     

Remarkable influence on the dielectric and magnetic properties of lithium ferrite by Ti and Zn substitution

The effect of Zn and Ti substitution on the magnetic and electrical properties of Li_0.5Zn_xTi_xMn_0.05Fe_2.45−2xO₄ ferrites (x=0.0 to 0.30 in steps of 0.05) +0.5wt% Bi₂O₃ prepared by a standard ceramic technique has been investigated. Electrical conductivity and dielectric measurements at different temperatures from 300 K to 700 K in the frequency range from 100 Hz to 2 MHz have been analysed. The variation of the real part of dielectric constant (ε^′) and loss tangent (tanδ) with frequency and temperature has been studied; it follows the Maxwell–Wagner model based on the interfacial polarization in consonance with the Koops phenomenological theory. It is found that the permittivity of zinc and titanium substituted lithium ferrite improves and shows a maximum value ( 1.5×10⁵) at 100 Hz for the x=0.25 sample. The dielectric transition temperature (T_d) depends on the concentration of Ti and Zn in Li_0.5Zn_xTi_xMn_0.05Fe_2.45−2xO₄. The saturation magnetization and Curie temperature both decrease with increase in the concentration of Ti and Zn in the ferrite.     

Prediction of γ‐B28 ELNES with comparison to α‐B12

Using ab initio techniques we have calculated the electron energy loss near edge structure (ELNES) of a new high pressure phase of boron (γ‐B₂₈) and the structurally similar allotrope, α‐B₁₂. The total ELNES spectra are presented as weighted sums of the site specific spectra of the constituent non‐equivalent B atoms. The five different non‐equivalent B sites in γ‐B₂₈ all show rich ELNES spectra and their similarities and differences to the simpler α‐B₁₂ case are detailed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices

chemical effect on the neutral species; and (ii) a Fermi-level effect on the ionized species, because, in addition to the chemical effect, the solubility of the species also has a dependence on the semiconductor Fermi-level position. For Zn and Be in GaAs and related compounds, their diffusion process is governed by the doubly-positively-charged group III element self-interstitials (I²⁺ _III), whose thermal equilibrium concentration, and hence also the diffusivity of Zn and Be, exhibit also a Fermi-level dependence, i.e., in proportion to p². A heterojunction consists of a space-charge region with an electric field, in which the hole concentration is different from those in the bulk of either of the two layers forming the junction. This local hole concentration influences the local concentrations of I²⁺ _III and of Zn^- or Be^-, which in turn influence the distribution of these ionized acceptor atoms. The process involves diffusion and segregation of holes, I²⁺ _III, Zn^-, or Be^-, and an ionized interstitial acceptor species. The junction electric field also changes with time and position. Received: 20 August 1998/Accepted: 23 September 1998     

Electrical properties of doped single crystals of Zn4Sb3

Conductivity , thermo-emf , and Hall constant R are presented as functions of temperature for pure Zn₄Sb₃ single crystals and for ones doped with Ag, Au, Ga, In, Sn, Pb, and Te. Here Ag, Au, Sn, and Pb act as acceptors. Increased hole concentration and , together with the reduced , are produced by In, Te, and Ga, on account of formation of solid solutions of InSb, GaSb, and ZnTe in Zn₄Sb₃.