Al2O3单晶三明治结构的高温热激发电流

以Al₂O₃单晶和具有三明治结构的Al₂O₃单晶-Bi₂O₃-Al₂O₃单晶试样为研究对象,测量了在室温到750℃之间升温过程和降温过程中这两种试样的热激发电流,仅在三明治结构试样中检测到了热激发电流.随测量过程中升温速率的增大,降温过程中的热激发电流逐渐减小.认为热激发电流是由缺陷离子的扩散所引起,通过扩散活化能的计算发现有两种缺 关键词： 热激发电流 缺陷 扩散     

Al/Al_2O_3/Al隧道结相位扩散的现象

超导约瑟夫森结是超导量子比特的核心元件,由约瑟夫森结组成的直流超导量子干涉器(DC-SQUID)由于其具有较高的探磁灵敏度,在超导磁通量子比特量子位测量中具有重要的作用.我们用铝为超导材料,采用电子束斜蒸发及静态氧化的方法制备了由两个Al/Al2O3/Al隧道结并联组成的DC-SQUID样品.将DC-SQUID样品置于20~1000mK范围内的不同温度下,对其跳变电流分布进行了测量.在50mK明显观测到了隧道结跳变电流机制由宏观量子隧穿到热激发的转变,并且在高于80mK时,观测到了相位扩散的现象.这对于隧道结相位动力学研究具有重要意义.     

SrAl12O19∶Pr3+中的热激发

研究了SrAl12O19∶Pr3+的光谱中3P1 和1I6的发射. 用3P1→3H5与3P0→3H5发射强度之比测量了温度，通过1I6→1G4与3P0→1G4发射强度之比，讨论了热激发对3P0可见光发射效率的影响. 关键词： 热激发 温度测量 三价镨离子     

钾蒸汽中双光子激发产生2~3∏_g—α~3∑_u~+扩散带受激辐射

本文报道了在K_2-K中通过双光子共振激发原子或双光子激发分子产生2~3∏_(?)—a~3∑_u~+扩散带辐射的实验结果,并对激发机制以及扩散带辐射随激发能量和温度的变化进行了讨论.     

离子注入/辐照引起Al2O3单晶的改性研究

600K温度下用110keV的He^＋,Ne^＋,Ar^＋离子注入及320K温度下用230MeV的^208Pb^27＋辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion／cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞（1-2nm）,在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire （Al2O3 ） samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27＋ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence（PL） and Fourier transformation infrared spectrum（FIR） spectra and transmission electron microscopy（ TEM ） measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,（ 1--2 nm） with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.     

钾蒸汽中双光子激发产生2^3Пg—a^3Σ^＋u扩散带受激辐射

本文报道了在Ｋ２－Ｋ中通过双光子共振激发原子或双光子激发分子产生２＾３Пｇ－ａ＾３Σ＾＋ｕ扩散带辐射的实验结果，并对激发机制以及扩散带辐射随激发能量和温度的变化进行了讨论。     

红外光激发作用下分子导电纳米结的非弹性电流研究

将"金属-单分子-金属"模型化为分子导电纳米结,应用扩展主方程方法研究了红外光激发作用下弱耦合分子导电纳米结的非弹性电流的传导过程.分别采用偶极跃迁的指数耦合、平方耦合以及线性耦合模型描述红外光场与分子的相互作用,研究了不同光场作用下非弹性电流与所加电压的关系,并讨论了分子内振动能重新分布效应对电流-电压特性的影响. 关键词： Franck-Condon阻滞 非弹性电流 电流-电压特性 红外光激发     

KNO3／Al2O3和K2CO3／Al2O3的强碱性研究

采用ＣＯ２－ＴＰＤ及Ｈａｍｍｅｔｔ批示剂法测定了ＫＮＯ３／Ａｌ２Ｏ３及Ｋ２ＣＯ３／Ａｌ２Ｏ３样品的碱量和碱强度。当ＫＮＯ３，Ｋ２ＣＯ３的负载量低于其单层分散阈值时，能在ＡｌＯ３均匀分布并产生强度为１８．４的强碱位；高于其单层分散阈值后则能生成强度为２７．０的超强碱位。     

强冲击压缩下LiF,Al2O3和LiTaO3 单晶的透光性

在二级轻气炮上,用高速电子相机扫描照相技术和改进的Mallory实验装置,对z切LiF,Al2O3(蓝宝石)和LiTaO3单晶材料的冲击透光性进行了对比测量,并用黑密度计提取出动态图像定量化的光强对比度变化曲线.结果表明,LiF单晶在102GPa压强下能够保持长时间的初始透光性不变,与公认的LiF具有优良的高压下透明性的认识一致.LiTaO3单晶在实验压力(139GPa)下变成基本不透明.而Al2O3单晶在131GPa冲击压力下则表现为透明性逐渐下降直至完全不透明.     

Bi2Sr2CaCu2O8＋Y单晶生长机制及缺陷的观察

在采用熔体生长加电极方法生长 Bi_2Sr_2CaCuO_(8+δ)单晶的基础上,利用 X 光衍射、扫描电镜和透射电镜等手段对 Bi_2Sr_2CaCu_2O_(8+y) 单晶进行了结构观察。结果表明:Bi 系2212相单晶属螺旋位错生长机制;观察到在晶体中除存在着大量位错外,还存在微裂缝;往往以一种迭层形态存在,中间夹在少量杂质,对其晶体生长机制及缺陷形成的原因进行了讨论。     

V centers in single crystal Al2O3

From optical and thermal bleaching experiments it is concluded that the 400 nm absorption band which appears in Al₂O₃ after γ-irradiation is a composite V band. One of its components is attributed to the V^-_OH center which also is responsible for a localized vibrational band at 3316 cm^-11 analogous to the one observed for the V_OH center in MgO. The irradiation also results in electron trapping at Cr³⁺ impurity ions to produce a band at 227 nm. Annealing at 170°C destroys the V^-_OH center by releasing holes which convert the Cr²⁺ to Cr³⁺ with an attendant thermoluminescence.     

α-Al2O3单晶的热释光和光释光特性

研究了纯α-Al2O3单晶的热释光发光曲线和三维发光谱,以及光释光衰变曲线,对它们的发光机理和剂量学特性进行了分析和讨论.实验观察到α-Al2O3单晶β射线照射后立即测量的热释光发光曲线,有峰温为76℃和207℃两个发光峰.经γ射线照射数小时后测量的三维发光谱,只有峰温207℃波长为416 nm发光峰,它与α-Al2O3:C晶体的发光波长基本相同,是受热激发到导带的电子与F+心复合所生成的F心激发态3P跃迁至基态1S发的光.用热释光动力学方程拟合不同照射剂量的发光曲线,207 ℃发光峰的峰温基本不随剂量而变化,形状因子μg的平均值为0.415±0.001,该发光峰的剂量响应为线性-亚线性,表明它基本符合一级动力学模型所预言的发光峰.实验还测定了纯α-Al2O3单晶辐照不同剂量后,470 nm波长激发的光释光衰变曲线.用两个指数衰变函数拟合光衰变曲线得到的衰变时间常数τ1(平均值为2.63±0.07s)基本不随剂量而变化,而τ2则在0.12至12 Gy范围内有明显下降趋势,大于12 Gy时无明显变化,约75s.时间常数τ1对应的光释光强度和吸收剂量的关系为线性-亚线性.     

Magnetism in a UNi2/3Rh1/3Al single crystal

We report a magnetization, magnetostriction, electrical resistivity, specific heat and neutron scattering study of a UNi_2/3Rh_1/3Al single crystal, a solid solution of an antiferromagnet UNiAl and a ferromagnet URhAl. The huge uniaxial magnetic anisotropy confining the principal magnetic response to the c axis in the parent compounds persists also for the solid solution. The magnetization curve at 1.6 K has a pronounced S shape with an inflection at 12 T. The temperature dependence of magnetic susceptibility exhibits a maximum around 10 K and is magnetic history dependent at lower temperatures where the resistivity increases linearly with decreasing temperature. The low-temperature ρ(T) anomaly is removed in a magnetic field applied along c, which yields a large negative magnetoresistance amounting to m46 zin 14T (at 2 K). The C/T values exhibit a minimum around 12 K and below 8 K they become nearly constant (about 250 mJ mol^?1 K^?2), which is strongly affected by magnetic fields. Neutron scattering data confirm a non-magnetic ground state of UNi_2/3Rh_1/3Al. The bulk properties at low temperatures are tentatively attributed to the freezing of U magnetic moments with antiferromagnetic correlations. The additional intensities detected on top of nuclear reflections in neutron diffraction in a magnetic field applied along c are found to be proportional to the field-induced magnetization, which reflects field-induced ferromagnetic coupling of U magnetic moments. This scenario is corroborated also by finding low-temperature magnetostriction data that also scale with the square of magnetization.     

Scintillation response of Y3Al5O12:Pr3+ single crystal scintillators

In this paper we present the photoluminescence (PL) and scintillation response of Pr³⁺-doped Y₃Al₅O₁₂ (YAG:Pr) single crystals grown by the Czochralski method with different Pr³⁺ concentrations of 0.16, 0.33, and 0.65 mol%. PL spectra and decay curves were measured for both the fast 5d → 4f and slow 4f → 4f emissions. The PL decay times were evaluated which evidence concentration quenching especially in ¹D₂ → ³H₄ emission for the highest Pr³⁺ concentration. Light yield (LY) of 15,600 photons per MeV and energy resolution of 6.4% at 662 keV γ-rays were obtained with the YAG:Pr (0.33%) crystal. The LY non-proportionality and energy resolution versus γ-ray energy were measured and the intrinsic resolution was calculated. A good proportionality of the LY was found within 7% over the energy range from 1274.5 keV down to 32 keV. The estimated photofraction in the pulse height spectra of 320 and 662 keV γ-rays was also determined and compared with the theoretical one calculated using WinXCom program.     

Thermal Convection in Molten Region of Hollow Al2O3 Microparticle

Russian Physics Journal - The paper presents the results of numerical simulation of the molten region formation in a hollow spherical α-Al2O3 microparticle. A part of a circular sector of the...     

Timing characteristics of the scintillation response of Gd3Al2Ga3O12:Ce and Gd3Al2.6Ga2.4O12:Ce single crystal scintillators

The timing characteristics of scintillation response of Czochralski-grown Gd₃Al₂Ga₃O₁₂:Ce and Gd₃Al_2.6Ga_2.4O₁₂:Ce single crystals were compared. The photoelectron yield, scintillation decay times, and coincidence time resolution were measured. At 662 keV γ-rays, the photoelectron yield of 6200 phe MeV⁻¹ obtained for Gd₃Al₂Ga₃O₁₂:Ce is higher than that of 4970 phe MeV⁻¹ obtained for Gd₃Al_2.6Ga_2.4O₁₂:Ce, while an inferior energy resolution of the former (7.2% vs. 5.6%) is observed. Scintillation decays are approximated by sum of exponentials with the dominant fast component decay time and its relative intensity of 89 ns (73%) for Gd₃Al₂Ga₃O₁₂:Ce and 136 ns (69%) for Gd₃Al_2.6Ga_2.4O₁₂:Ce. The coincidence time resolution obtained for Gd₃Al₂Ga₃O₁₂:Ce is superior than that of Gd₃Al_2.6Ga_2.4O₁₂:Ce. The normalized time resolution was also discussed in terms of a number of photoelectrons and decay characteristics of the light pulse.     

Thermal distribution produced by short pulse lasers in bulk Al2O3

The paper deals with an one-dimensional model of short pulse laser irradiation of the Al₂O₃ target and with simulation of the temperature distribution induced by it. In the model the temperature-dependent specific heat was considered. Also the latent heats of melting and evaporation were involved. The influence of energy density and absorption coefficient on the effect of overheating was examined. Experimental results on the ablation rate of the Al₂O₃ target by pulsed CO₂ TEA laser in the evaporation regime and the threshold energy agreed well with the model.