两种谐振腔长度的微腔有机电致发光器件模拟

微腔的谐振腔长度直接影响微腔有机电致发光器件(MOLED)的发光特性,根据微腔器件的相关计算公式运用传输矩阵法,分别对微腔长度L=λ/2和L=λ(λ:中心波长)时,在微腔内不同位置激子复合发光的电致发光谱(EL)进行模拟计算和比较。发现:微腔长度为L=λ/2时,峰值均为520nm,半峰全宽均为17nm,激子处在微腔的中心位置时,峰值强度和积分强度均为最大。L=λ时,激子在腔内不同位置时,峰值均为520nm,半峰全宽均12nm,在腔的中心区域时,与L=λ/2时正好相反,峰值强度和积分强度最小。分析后判断是因为两种长度的微腔内电场强度分布不同,激子位于腔内电场的最大值处发光性能最好。说明要制作出高效率的MOLED,要区别不同谐振腔长度,并使激子处于腔内电场最大处。     

Surface and edge emission in organic light emitting devices

We report the studies on photoluminescence (PL) and electroluminescence (EL) spectra of organic light emitting diodes (OLED) based on most widely used light emitting material, i.e., Tris-(8-hydroxyquinoline) aluminum (Alq₃). PL studies from the edges and top surface were carried out on different thicknesses of single layer of Alq₃ coated on glass substrate and the PL intensity from the edges was found to be more than that from the top surface. On the other hand EL emission intensity from the surface was found to be larger than that from the edges of the OLED device. The discrepancy in the PL and EL emission from edge and the top surfaces is discussed. The effect of the thickness of Alq₃ layer on the PL intensity and the emission spectra are also investigated.     

微腔效应对顶发射串联蓝光有机电致发光器件性能的影响

相比于传统有机电致发光器件,串联有机电致发光器件的发光效率与寿命均得到明显提升.因此,深入研究微腔效应对顶发射串联有机电致发光器件性能的影响具有重要意义.本文以蓝光器件为例,通过光学仿真模拟与实际实验相结合的方法,研究了顶发射串联蓝光器件的光学性能与电学性能变化规律.具体实验为:分别制备了顶发射串联蓝光器件,使其两个发光层位置分别位于器件光学结构中的第一与第二反节点、第二与第三反节点、第三与第四反节点.分析并确定了顶发射串联蓝光器件的两个发光层位置分别位于第二反节点与第三反节点处时,器件性能较佳.即:当器件电流密度为15 mA/cm^2时,器件电流效率为10.68 cd/A(色坐标CIEx,y=0.14,0.05),其亮度衰减到95%所需时间为1091.55 h.可能原因是:器件腔长较长时,既可以改善第一发光单元的空穴与电子平衡度、削弱表面等离激元效应,降低膜厚波动性对器件腔长的影响性;又可以在一定程度内起到包裹Partical的作用,提高效率,延长寿命.这一研究成果为设计高效率、长寿命的顶发射串联器件提供了重要依据.     

光子晶体发光二极管

利用光子晶体的光子禁带和光栅衍射效应可以提高LED的出光效率,扩大LED的应用范围。总结了光子晶体发光二极管的原理和典型器件。通过比较表明,与光子禁带效应相比,利用光栅衍射效应提高LED出光效率的方法更适用于电注入发光。因此可望用更廉价的方法在LED表面制造光子晶体,可通过光栅衍射效应来有效地提高其出光效率。     

3,4,9,10-Perylenetetracarboxylicdiimide as an interlayer for ultraviolet organic light emitting diodes

Ultraviolet organic light emitting diodes with 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI) interlayer have been achieved. The emission spectrum and intensity were strongly dependent on the thickness of PTCDI interlayer, in spite of the fact that PTCDI has neither much lower HOMO nor much higher LUMO level, which is considered necessary for efficient charge blocking layers. The influence of PTCDI layer was investigated in three different device configurations and obtained results are discussed. For optimal device configuration, OLED with emission centered at 370 nm and turn-on voltage of 4.5 V is obtained.     

Pure blue emission from undoped organic light emitting diode based on anthracene derivative

This paper presents organic light emitting diodes (OLEDs) which were fabricated by using undoped 9,10-di(2-naphthyl)anthracene (ADN) as the emitting layer, N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-amine (TPD) as the hole transporting layer, and one of tris-(8-hydroxy-quinolinato) aluminum (Alq₃), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) as the electron transporting layer. By optimization for the thickness of device, efficient pure blue organic light emitting diodes were obtained, which is attributed to the synergy of both the hole transporting layer and the electron transporting layer.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

基于缺陷光子晶体结构的GaN基发光二极管光提取效率的有关研究

现有的研究表明,利用光子晶体可以有效提高发光二极管的光提取效率.由于在制造时光子晶体中可能会存在缺陷和错位,本文基于时域有限差分法对光子晶体中的缺陷和错位对发光二极管发光效率的影响进行了研究.数值仿真结果表明,光子晶体中少量缺陷或者微小错位并不会降低发光二极管的光提取效率,其中某些缺陷反而能增强光子晶体发光二极管的光提取效率.本文对其物理机理给出了详细的理论分析,并设计了一种具有缺陷的光于晶体,在未刻蚀到有源层(离有源层20 nm)的情况下,其光提取效率达到了完美光子晶体的1.6倍.通过对这种缺陷光子晶体的空间频谱分析可知,可以通过设计具有特殊空间频谱分布的光子晶体来提高发光二极管的发光效率,这对设计高光提取效率的光子晶体结构和制造高效率的发光二极管有指导意义.     

Influence of cavity de-tuning in semiconductor microcavity LEDs

Data are presented showing the precise role of the cavity de-tuning on the emission properties of semiconductor microcavity light emitting diodes (MC-LEDs). Enhanced output power and narrow line width emission have been observed over a wide range of cavity de-tunings, with a power reduction of less than −1 dB observed for ±12 nm de-tuned devices. For a resonantly de-tuned MC-LED, the slope efficiency extracted from the power output versus current characteristics decreases monotonically with increasing temperature. However, for a MC-LED de-tuned +5.6 nm to long wavelength with respect to the room temperature quantum well (QW) peak, the extracted slope efficiencies vary by less than ±0.5 dB over a temperature range of greater than 65°C. Compared to a conventional LED, narrower beam divergence is observed for MC-LEDs de-tuned to short wavelength with respect to the bare QW peak. For positively de-tuned MC-LEDs the beam divergence broadens, and the far-field emission profiles exhibit a double-lobed pattern that is sensitive to pump level.     

New double graded structure for enhanced performance in white organic light emitting diode

This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq₃ (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq₃: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m² at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.     

热真空环境下LED发光效率的实验研究

为了研究LED的发光效率在实际空间环境下的变化,对LED的发光效率在热真空环境下进行实验研究,测定LED光学样机在大气环境中以及在热真空环境中的温升及硅光电池电流变化情况,并分析其结点温度与光强的对应关系,得出LED的输出光效随着结点温度的升高而降低的结论。分析比较了在大气、热真空环境条件下的光效输出随结点温度变化的异同,验证了在大气中比在真空环境中光效下降较慢。     

The luminescence properties of Er-doped and Er-Tm-co-doped phosphate glasses for white light emitting diode

Phosphate glasses and glass ceramics doped with Er³⁺ and co-doped with Er³⁺-Tm³⁺ are presented in this work. The luminescence properties have been characterized by absorption, excitation and emission spectra. All samples excited by blue light could emit a combination of blue/green/orange/red wavelength giving white light. For Er³⁺-doped glasses, a self-quenching effect has been obtained and an adjustable tune comes out after crystallization. For co-doped glasses, the red emission at 651 nm has been enhanced due to the existence of Tm³⁺, which could be relative to both the overlapped emissions and the energy transfer from Tm³⁺ to Er³⁺.     

Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N′-bis (4-phenyl)-N, N′-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq₃:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.     

基于Mie散射理论的白光发光二极管荧光粉散射特性研究

基于Mie散射理论,对大功率发光二极管封装中荧光粉的光激发、吸收、散射等作用进行数值模拟,仿真计算在不同白光色温时前后向散射光的强度比例,研究了荧光粉的颗粒大小对白光发光二极管最大光通量的影响.对保型荧光粉涂覆结构中不同直径荧光粉颗粒和不同色温时的光效进行了分析,还分析了同样色温下不同荧光粉颗粒直径、涂层的厚度对白光发光二极管出光的空间色温分布均匀性的影响.研究中所采用的器件激发光谱和发射光谱都为材料的实测光谱,而并非假设的单一光谱.研究表明:在采用保型荧光粉涂覆结构的前提下,当荧光粉颖粒直径为0.5μm时能使发光二极管光通量达到最大;荧光粉颗粒越小,发光二极管空间色温分布均匀性越好;对给定的封装结构,荧光粉涂层厚度为0.8 mm时空间色温分布均匀性最佳.     

基于MEMS的波长可调谐微腔有机发光二极管的设计

利用MEMS空气腔在静电力作用下的变形,设计了一种波长可调谐的微腔电致有机发光二极管.通过外加电压,可调制发光中心波长.模拟计算了不同电压下的光谱特性,结果表明可以获得半宽度为2.14 nm,可调谐范围为150 nm的发光光谱.这在光互联的可调谐光源和彩色显示中有很好的应用前景.     

功率型发光二极管的研究与应用进展

文章首先对功率型发光二极管的起源和发展作了回顾和简要的叙述．然后以固体光源照明为目标，给出了几种可见光功率发光二极管芯片和封装的典型结构，并且对它们各自的特点进行了比较．最后指出了功率发光二极管作为固体光源取代真空灯泡用于照明在未来的五至十年内将成为现实．     

发光二极管材料与器件的历史、现状和展望

文章介绍了发光二极管材料和器件的研究、开发的历史，概述了发光二极管技术的发展现状和进展．通过与其他类型光源的比较，向读者展示了发光二极管未来的重要地位和光明前景．发光二极管的最近的成就是实现了有色光方面的成功应用．高功率白色发光二极管已开始应用于便携式和特殊照明．而在通用的照明领域要成功地应用发光二极管，则需要通过性能和价格方面的继续突破来实现．     

发光二极管测试技术和标准

文章从发光二极管的空间能量分布和光谱能量分布两个方面叙述了光和辐射参数测试的原理和方法．讨论了辐射通量和光通量的基本概念、测量方法及相互之间的关系．在实际应用中，发光二极管的发光强度和辐射功率及他们的空间分布是常需要测量的参数．文章从基于人类视觉特性的色度学原理出发，讨论了发光二极管的光谱能量分布和重要的色度学参数以及相应的测试标准问题．     

Effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes

We provide a large F-P cavity model to analyze the effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes (VLEDs). It shows that the distance (d) between the active region and the metal reflector has a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency corresponding to the optimal d is about three times the neighboring minimum. The reflector of different metals is considered in this model and the results show that the optimal d and the value of the maximum in the extraction efficiency are directly related to the type of metal, which can be attributed to varied reflection phase shift and reflectivity on different metals, respectively.     

Efficient blue phosphorescent organic light emitting diodes with host engineering

We demonstrate as much as possible blue color and high efficiency phosphorescent organic light-emitting diodes (PHOLEDs) by using well-known iridium(III)bis[(3,5-difluoro-4-cyanophenyl)-pyridinato-N,C′]picolinate (FCNIrpic) dopant and previously reported good host materials. For the control of blue color and efficiency, various host materials, 1,3-bis(carbazole-9-yl)benzene (mCP), 9-(3-(9H-carbazole-9-yl)phenyl)-3-(dibromophenylphosphoryl)-9H-carbazole (mCPPO1), and 2,8-di(9H-carbazol-9-yl)dibenzo[b,d]furan (DFCz), bis(4-(N-carbazole)phenyl)dimethylsilane (2MCBP) are selected and investigated their performances. A maximum external quantum efficiency (EQE) of 23.9% and power efficiency of 30.2 lm/W are achieved from 2MCBP device with Commision Internationale de L'Eclairage color coordinates (CIE_x,y) of (0.14, 0.21). The deepest color with color coordinate of (0.14, 0.19) is obtained for the mCP device.