溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

The optical properties of thin erbium films

The effective dielectric constant, ε′₂, of very thin films of erbium on sodium chloride substrates was determined from measurements of normal incidence reflectance and transmittance in the visible spectrum. ε′₂ showed a maximum which moved to longer wavelengths as the film thickness increased. Electron microscopy revealed that the film islands grew flatter and more irregular with thickness. The shape factor of the islands, F, was calculated by a modified Maxwell-Garnett method and became smaller as the film thickness increased.     

射频溅射制备的BST薄膜介电击穿研究

采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性.实验表明，在电压增大到传统击穿电压(电流密度出现瞬时增大时的电压)之前，薄膜性能已被破坏，发现在传统击穿状态之前存在另一个新状态——初始击穿状态.通过测试各状态的J-V(电流密度-电压)、J-T(电流密度-温度)特性分析其导电机理，建立了薄膜结构、漏电性能随电场强度增大而变化的模型.最后提出了确定实际意义上击穿电压的方法. 关键词： BST薄膜 介电击穿 漏电流     

Multiferroic properties of sol-gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi 5 FeTi 3 O 15 thin films (BFCT-x,Bi 5 Fe 1-x Co x Ti 3 O 15) were prepared using a sol-gel technique.XRD patterns confirm their single phase Aurivillius structure,and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12.The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films.The remanent magnetization (M r) first increases and reaches the maximum value of 0.42 emu/cm 3 at x=0.12 due to the possible Fe 3+-O-Co 3+ ferromagnetic coupling.When x=0.25,the M r increases again because of the dominant Fe 3+-O-Co 3+ ferromagnetic coupling.The remanent polarization (2P r) of BFCT-0.25 was measured to be as high as 62 μC/cm 2,a 75% increase when compared with the non-doped BFCT-0 films.The 2P r remains almost unchanged after being subjected to 5.2 × 10 9 read/write cycles.Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

Crystalline orientation of BiMnO3 thin films grown by rf-sputtering

BiMnO₃ thin films were deposited by means of rf-sputtering onto [1 0 0] oriented SrTiO₃ substrates. X-ray diffraction measurements revealed epitaxial growth with [0 0 l]_m orientation in the monoclinic structure representation, equivalent to the direction of the pseudocubic cationic lattice. This [0 0 l]_m orientation was obtained in a wide deposition parameters range. Preliminary magnetization measurements suggest that these films do not present ferromagnetism below the bulk Curie temperature, T_C=105 K.     

Homogeneity analysis of sculptured thin films deposited in symmetric style through glancing angle deposition technique

The symmetric deposition technique is often used to improve the uniformity of sculptured thin film （STF）. In this paper, optical properties of STF with the columnar angles 4-/3 are analyzed theoretically, based on the characteristic matrix method for extraordinary waves. Then, the transmittances of uniformity monolayer and bilayer STF in symmetrical style are calculated to show the effect of the bilayer structure on the optical properties of STF. The inhomogeneity of STF is involved in analyzing the differences in transmittance and phase retardation between monolayer and bilayer STF deposited in symmetric style. The results show that optical homogeneity of STF can be improved by depositing in symmetric style at the normal incidence, but it is not the same case as the oblique incidence.     

Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Multiferroic heterostructures thin films, SrBi₂Ta₂O₉/BaFe₁₂O₁₉ (SBT/BaM), were grown on Pt/TiO₂/SiO₂/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.     

Structural characterization and magnetoresistance of manganates thin films and Fe-doped manganates thin films

Perovskites thin films with the composition La_0.6Ca_0.4MnO₃ doped with 20% Fe, were prepared by pulsed reactive crossed beam laser ablation, where a synchronized reaction gas pulse interacts with the ablation plume. The films were grown on various substrates and the highest colossal magnetoresistance ratio (CMR) was detected by Hall measurements for films grown on LaAlO₃ (1 0 0), which was selected as substrate for further investigations.Several growth parameters, such as substrate temperature and target to substrate distance were varied to analyze their influence on the film properties.The structure of the deposited thin films was characterized by X-ray diffraction and atomic force microscope, while Rutherford backscattering (RBS) was used to determine the film stoichiometry. The electrical properties were determined by Hall effect measurements in a magnetic field of 0.51 T.These measurements reveal that the amplitude of the CMR ratio depends strongly on the substrate and that the oxygen content influences the temperature where the transition from semiconductor to metal is observed.     

Lithium ions conduction in Li2xMn1-xPS3 films

Li_2xMn_1-xPS₃ films have been synthesized by exfoliating MnPS₃ through the successive intercalations of K⁺ and Li⁺ ions. Their dielectric response has been measured from 80 to 350 K in the frequency range of (10²–10⁶) Hz. The obtained data have been analyzed in terms of both complex permittivity ε* and the ac conductivity σ_ac. The frequency dependence of σ_ac has been interpreted in terms of the Jonscher’s law, whose exponent n decreases by increasing temperature. The n values lie between 0.479 and 0.501 and are typical of materials in which the ac conductivity is due to multiple hops of carriers. By analyzing the σ_dc temperature dependence, the observed dielectric response has been attributed to the intercalated lithium ions, and the Li_2xMn_1-xPS₃ films have been classified as hopping charge carrier systems.     

Phase transitions and domain structures in thin ferroelectric films

Recent advances in technology made available high quality thin ferroelectric films and ferroelectric–paraelectric multilayers. But understanding of the properties of these systems is far from being complete. In particular, it is not clear why various anomalies observed at phase transitions here are different from those in high quality bulk systems. The aim of the paper is to discuss some specific features of ferroelectric phase transitions in thin films and multilayers which are taken into account only partially by the theory. The discussion is limited to revealing the character of ferroelectric state forming just after the transition, i.e. if it is single-domain or multi-domain, if it is single-phase or two-phase. First, thin films with electrodes and on a substrate are discussed. The role of non-ideality of electrodes in realization of one of the first pairs of possibilities is emphasized. A more recent idea is that even for ideal electrodes a domain formation is possible when some conditions on the electrode–ferroelectric interface and the material constants of the material are met. This seems to be quite possible for the considered systems. Clamping by the substrate may lead to formation of a two-phase state which is practically unexplored for very thin films on substrates. Second, ferroelectric–paraelectric multilayers are considered which are more challenging for theoretical study than the thin films. Indeed, despite periodicity in the composition the domain structures are almost never periodic along the multilayer. The non-ideality of electrodes seems to lead to practical impossibility of single-domain ferroelectric phase transition in the multilayers of the considered type.     

Multiferroic RMnO3 thin films

Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO₃ perovskites are central to this progress, providing a suitable platform to tailor spin–spin and spin–lattice interactions.With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO₃ epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments.     

Microwave magnetic properties of soft magnetic thin films

We review our works that focus on the microwave magnetic properties of metallic,ferrite and granular thin films.Soft magnetic material with large permeability and low energy loss in the GHz range is a challenge for the inforcom technologies.GHz magnetic properties of the soft magnetic thin films with in-plane anisotropy were investigated.It is found that several hundreds of permeability at the GHz frequency was achieved for Co100-xZrx and Co90Nb10 metallic thin films because of their high saturation magneti...     

Microstructure and magnetic properties of CoFe_2O_4 thin films deposited on Si substrates with an Fe_3O_4 under-layer

The microstructure and magnetic properties of cobalt ferrite thin films deposited by the sputtering method on an Fe3O4 under-layer were investigated at different post-annealing temperatures.Results show that the Fe3O4 under-layer can accelerate the grain growth of cobalt ferrite films due to the phase transformation of the Fe3O4 under-layer at about 400°C-500°C.By introducing the Fe3O4 under-layer,cobalt ferrite nanocrystalline thin films with high coercivity can be obtained at lower post-annealing temperat...     

Magnetic field annealing effects on self-oriented BiFeO3 thin films prepared by chemical solution deposition

Self-oriented BiFeO₃ (BFO) thin films are prepared via chemical solution deposition method with magnetic field in-situ annealing process. The effects of magnetic annealing on the microstructure, magnetic and dielectric properties as well as magnetoelectric coupling effect of the BFO thin films are investigated. With increasing the annealing magnetic field, the crystallization quality, texture, grain boundary connectivity and densification of the films are enhanced, which is attributed to the improvement of connection and diffusion of components. The magnetization of the field-annealing films and dielectric constant as well as remanent polarization increases with increasing the strength of annealing magnetic field. In addition, it is observed that magnetocapacitance value of the magnetic-field-annealing BFO thin film is higher than the non-field-annealing one. Moreover the BFO thin films annealed at 3 kOe magnetic field show the magnetoelectric effect with 4% under 2 kOe at room temperature.     

掺稀土Ce的金刚石薄膜光致发光研究

制备了不同注入剂量的Ce^3 掺杂金刚石薄膜，研究了其光致发光特性，得到了发光主峰位于蓝紫区（421nm和462nm处）的光发射。实验中发现随着Ce^3 注入剂量的增加，器件光致发光的强度也逐渐增加，这些实验现象作了解释。     

Hematite thin films: growth and characterization

We have grown hematite (α–Fe ₂ O ₃) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α–Fe ₂ O ₃. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.     

Lead telluride nanocrystalline thin films: Structure,optical characterization and a broadband dielectric spectroscopy study

Nanocrystalline PbTe thin films were deposited on a glass substrate by thermal evaporation technique with two thicknesses namely, 45 and 250 nm. The structural studies revealed that the films have nanocrystalline cubic structure and the particle size was found to be 11 and 20.7 nm, for low and high thicknesses respectively. The FE-SEM study shows that the surface grains increase for higher thickness film. This indicates that samples lying under the strong regime of confinement for PbTe thin films. The optical properties confirm the occurrence of confinement process as the optical band gap are 1.67 and 0.9 eV for 45 and 250 nm films, respectively. The dielectric results indicated that the conductivity increases by about two orders of magnitude with increasing the thickness from 45 to 250 nm. Moreover, the permittivity shows a higher dispersion step at lower frequencies in both samples due to the hopping conduction mechanism in addition to the interfacial polarization in such heterogeneous structures. Another small dispersion step is noticed in case of the lower thickness. It is attributed to the polarization of the accumulated charge carriers near the grain boundaries interfaces. No indication of any electrode phenomena in both samples is shown here.     

Raman spectroscopic investigations of epitaxial BiFeO3 thin films on rare earth scandate substrates

BiFeO₃ epitaxial thin films fabricated by pulsed laser deposition on different scandate substrates were investigated by means of Raman spectroscopy. We observed periodic changes in Raman position, full width at half maximum and intensity for some phonon modes as a function of the azimuthal angle ϕ. Further analysis revealed the possibility to assign the so far controversial discussed Raman modes at low wavenumbers (<250 cm⁻¹) through rotational Raman measurements at different azimuthal angles, which show high sensitivity to the aforementioned parameters. Furthermore, the ferroelectric/ferroelastic domain structure shown by piezo‐response force microscopy investigations of the samples was confirmed. Our results are supported by symmetry‐based calculations including the analysis of Raman scattering geometry as well as the dielectric function of BiFeO₃ in the infrared range. Copyright © 2015 John Wiley & Sons, Ltd.     

Epitaxial growth and in-plane dielectric properties of orthorhombic HoMnO3 films

Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and loss of HMO films were measured as functions of temperature(80–300 K) and frequency(120 Hz–100 kHz) by using coplanar interdigital electrodes. Two thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The in-plane dielectric properties of epitaxial orthorhombic HMO films were considered as universal dielectric response behavior, and the dipolar effects and the hopping conductivity induced by the charge carriers were used to explain the results.     

金刚石薄膜电致发光研究

报道了金刚石薄膜电致发光现象.为进一步提高金刚石薄膜蓝区电致发光强度,分别采用了硼氮双掺杂法和稀土掺杂法制备出了金刚石薄膜电致发光器件,并采用低电容率的本征金刚石薄膜和氧化硅薄膜为绝缘层的夹层式器件结构.研究结果显示:采用稀土铈掺杂可以有效地提高金刚石薄膜蓝区电致发光强度,其蓝区最大电致发光强度可达3.5 cd/m2;采用低电容率绝缘膜的夹层式结构,能有效地提高电子进入发光层时的能量,并有助于提高器件发光的稳定性和发光寿命.