猝发双脉冲直线感应加速器组元研究

在原单脉冲直线感应加速器（LIA）组元的基础上，利用电缆延时和电缆反射两种方式获得了间隔500～1 000 ns的猝发双脉冲输出。在感应加速腔上进行了双脉冲实验，获得了幅度大于200 kV、前沿小于35 ns、平顶大于60 ns的双脉冲加速电压波形。两种方式中第一个脉冲的前沿和幅度都达到了原单脉冲组元的水平，表明加速腔负载的变化对波形没有明显影响，但由于电缆对波形的损耗，第二个脉冲的幅度和前沿比第一个脉冲略差。可以利用水介质传输线来代替长电缆，减小传输线的长度及其对波形的损耗。两个脉冲间的幅度差异可以通过改变长电缆的阻抗来调节。实验表明，通过这两种猝发双脉冲的产生方式并结合加速腔磁芯的改进，可简单高效地完成原单脉冲LIA的双脉冲改造。     

大功率半导体激光器线阵列电流扩展的研究

利用金属有机物气相淀积生长了980 nm GaAs/AlGaAs分别限制应变单量子阱激光器物质,通过常规工艺制成国际标准的1 cm半导体激光器线阵列。隔离槽的深度与电流扩展有着密切的关系,对出光功率等重要参数有着较大的影响。通过隔离槽变深度实验,发现在不超过有源层的前提下,输出功率和斜率效率与隔离槽深度均成正比,阈值电流与隔离槽深度成反比,隔离槽深度过深即超过有源层会导致激光器线阵列的主要参数下降,从而最佳腐蚀深度应不超过有源层,本实验为1.993 mm。     

大功率条形激光二极管阵列光束整形方法研究

为改善条形大功率LD阵列的光束质量,提高其输出功率密度,使其更利于应用,提出了一种基于非成像光学的光束分割重排的光束整形方案,详细讨论了方案的工作原理和设计方法。对整个方案用Zemax进行了仿真优化并通过计算比较整形前后光束的光束参数乘积分析了光束质量的改善情况。首先采用抛物面反射镜对光束进行准直,并配合反射镜实现按发光区对光束的分割,进一步利用平行六面体棱镜对光束的平移效果完成光束重排,最后在输出端得到了光占空比为1的高亮度的矩形光斑。仿真计算结果表明,整形后光束的快慢轴尺寸相近,光束参数乘积比接近于1,质量均衡;整个光束的能量集中,平均功率明显提高。     

Study on the beam shaping of high-power laser diode bars

Based on the Collins form, the intensity distribution of the resulting beam is derived when Gaussian beams of a high-power laser diode bar pass through a paraxial optical system. Then flattop beam profiles are obtained by a concave cylindrical lens, and the propagation properties are discussed in detail, such as the peak-intensity axis inclined at an angle γi. In addition, an expression to calculate beam angular width is presented.     

高密度封装二极管激光器阵列

 理论模拟了自制的高效冷却器的散热能力,分析了单元封装结构所需材料的导热特性,获得了高功率二极管激光器在高功率密度、高占空比条件下运行的可行性。改进了高密度封装的关键工艺,热沉金属化层达到了3~5 mm,焊料厚度为4~7 mm,封装间距0.6 mm,采用峰值功率1 kW的背冷式叠阵二极管激光器。实验测试结果表明:封装的二极管激光器叠阵单元的整体封装热阻为0.115 ℃/W,有良好的散热能力;该叠阵模块在电流为100 A、占空比15%时,输出峰值功率为986 W,峰值功率密度达到1.5 kW/cm2,平均每个板条的斜效率为1.25 W/A,激光器阈值电流为20 A左右。     

Efficient Yb:KGW lasers end-pumped by high-power diode bars

The laser performance of Yb:KGW under end-pumping with high-power diode bars has been investigated. In one configuration, the pump is delivered through an optical fiber yielding a symmetric but unpolarized pump spot. In the second configuration, the pump is delivered through an optical lens system yielding a polarized but asymmetric pump spot. Both configurations resulted in a maximum optical to optical efficiency of 47% and a maximum power of 12.4 W has been generated with the fiber coupled pump source. The output power was limited by crystal fracture, which occurred at an estimated temperature gradient of 1.2×10⁵ K/m. Thermal lensing and laser tuning characteristics are also investigated. PACS 42.55.Xi; 42.60.Lh     

Facet degradation of high-power diode laser arrays

Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of ‘unaged’ arrays emitting in the 808-nm wavelength region with different architectures is similar, however, with an increased load thermal behaviors differ significantly and exhibit failure events at facet temperatures typically between 150 and 450 °C. From various experiments, among them facet temperature measurements for ultrahigh-power operation as well as by preparative failure analytics, we provide evidence that in arrays the front facets are significantly affected by device operation and influence the failure behavior of the whole high-power diode laser also in cases when the device failure is accompanied by dislocation creation inside the device. Received: 3 October 1999 / Accepted: 9 November 1999 / Published online: 8 March 2000     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

Interferometric method for characterizing the smile of laser diode bars

We propose an interferometric method for the characterization of the smile of laser diode bars (LDBs). The LDB is placed in a Lloyd’s mirror set-up. The beams coming from the LDB and its virtual image produce Young’s fringes, which are captured by a charge-coupled-device array, digitised and saved in a computer as an irradiance matrix. The irradiance matrix is processed in the computer and the smile parameter extracted. The theoretical basis of the method is discussed and simulated fringe patterns of practical situations are presented. A device based on the described interferometric method was mounted and the smile of a commercially available LDB was characterised.     

大功率二极管激光线阵的“smile”测量方法

 二极管激光线阵封装中产生的“smile”现象对激光器的激射特性、寿命、光束质量等都会产生较大的影响。采用高分辨率CCD、快轴准直透镜及柱面透镜组成的单轴放大系统对激光线阵发光单元成像及基于光斑强度求质心的算法实现了二极管激光线阵“smile”的测量。实验结果表明：在阈值电流附近,采用In焊料焊接的器件“smile”小于2 μm,讨论了快轴准直透镜、CCD等对实验结果的影响。     

Vector far-field propagation of a high-power laser diode

Based on the scalar nonparaxial theory, using a simple mathematical expression, a vector model to describe the propagation of a high-power laser diode beam is proposed. Through the analysis of the properties of the TM-mode propagation, a relative error criterion of optical intensity is discussed, it is found that the error is only correlative with the coordinate perpendicular to the junction plane and the propagation distance.     

高功率半导体激光器的可靠性与寿命评价

介绍了高功率半导体激光器的结构特点、失效机理和热产生机制等方面的内容。就寿命评价方面展开讨论,详细分析了高功率半导体激光器寿命评价的难点、现有方法以及国内外发展状况,最后就寿命评价系统及寿命试验提出了一些建议。高功率半导体激光器在工业加工、国防航天等领域的巨大应用前景推动其可靠性与寿命的发展,而其可靠性的提高和寿命的延长会大大拓宽其应用领域。     

880nm半导体激光主动照明光纤耦合模块

为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。     

高功率二极管列阵泵浦固体激光泵浦耦合优化设计

高功率二极管阵列泵浦固体激光系统的核心在于泵浦耦合技术,泵浦耦合直接决定了系统的成本、增益能力、增益均匀性、泵浦引发动态波前畸变和泵浦引发动态光束漂移等关键问题。通过对用于高功率二极管列阵泵浦固体激光系统泵浦耦合优化设计的3维光线追迹方法的研究,从二极管发光远场属性出发,建立其理论计算模型,对高功率激光二极管阵列端面泵浦大口径放大器的一种新型耦合方式——二极管列阵拟球面排列、空心镀银导管耦合进行了优化设计,并开展了泵浦耦合效率、泵浦场均匀性、泵浦场传输性等实验研究,实现了72%耦合效率、5 mm内80%传输效率的均匀平顶泵浦耦合场输出,理论计算与实验结果符合较好。     

880 nm半导体激光主动照明光纤耦合模块

为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400 μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。     

高功率二极管列阵泵浦固体激光泵浦耦合优化设计

 高功率二极管阵列泵浦固体激光系统的核心在于泵浦耦合技术,泵浦耦合直接决定了系统的成本、增益能力、增益均匀性、泵浦引发动态波前畸变和泵浦引发动态光束漂移等关键问题。通过对用于高功率二极管列阵泵浦固体激光系统泵浦耦合优化设计的3维光线追迹方法的研究,从二极管发光远场属性出发,建立其理论计算模型,对高功率激光二极管阵列端面泵浦大口径放大器的一种新型耦合方式——二极管列阵拟球面排列、空心镀银导管耦合进行了优化设计,并开展了泵浦耦合效率、泵浦场均匀性、泵浦场传输性等实验研究,实现了72%耦合效率、5 mm内80%传输效率的均匀平顶泵浦耦合场输出,理论计算与实验结果符合较好。     

高功率半导体激光器光纤耦合实验研究

为进一步提高光纤耦合半导体激光器的输出功率,提出了一种多单管半导体激光器通过台阶分布、光束精密准直及自由空间合束实现高功率光纤耦合输出的方法,该方法具有结构简单、光学元件易于加工、耦合效率高等优点。采用这种方法对5只封装在次热沉上的单管半导体激光器开展了芯径100 m、数值孔径0.22多模光纤的耦合实验研究,当工作电流为7.0 A时,光纤连续输出功率为21.8 W,亮度为1.83 MW/(cm2sr) ,耦合效率为70.32%。     

高功率半导体激光器光纤耦合实验研究

为进一步提高光纤耦合半导体激光器的输出功率,提出了一种多单管半导体激光器通过台阶分布、光束精密准直及自由空间合束实现高功率光纤耦合输出的方法,该方法具有结构简单、光学元件易于加工、耦合效率高等优点。采用这种方法对5只封装在次热沉上的单管半导体激光器开展了芯径100μm、数值孔径0.22多模光纤的耦合实验研究,当工作电流为7.0 A时,光纤连续输出功率为21.8 W,亮度为1.83 MW/(cm~2·sr),耦合效率为70.32%。     

Spectrally narrowed external-cavity high-power stack of laser diode arrays

We describe an effective external cavity for narrowing the spectral linewidth of a multiarray stack of laser diode arrays. For a commercially available 279-W free-running five-array laser diode array operating at 60 A, we narrow the spectral linewidth to 0.40 nm at FWHM with 115 W of cw power output. This technique leads to the possibility of higher-efficiency, lower-cost production of hyperpolarized noble gases for magnetic resonance imaging.