该文针对超声无损检测与成像功能空气耦合换能器开展了分析计算和研制。为解决压电材料与空气间巨大的阻抗失配问题,进行了多匹配层设计,并基于有限元技术仿真设计了1-3压电复合材料参数。借助复数压电方程,导出考虑损耗的多匹配层压电复合材料换能器厚度振动等效电路,获得其等效导纳,以此计算电导谱,同时基于有限元技术数值计算相应电导谱,二者有较好的一致性。在此基础上分别设计制作复合压电材料,多匹配层材料以及由此构成的空气耦合超声换能器。换能器的实测电导谱与数值仿真结果一致。进一步的换能器回波信号测试及其谱分析结果表明,所研制的160 k Hz中心频率空气耦合换能器样品有较好灵敏度和带宽。这些结果说明,该文研制的空气耦合超声换能器的初样是成功的。 相似文献
Results of the investigation on the formation of double layers in double plasma device are presented. By appropriate modifications
in the biasing conditions, we have been able to obtain both weak (eΔφ<10KTe) and strong double layers (eΔφ>10kTe) in the device. Unlike previous experiments, we have not been limited to potential jumps equal to ionisation potential of
the neutral gas. A detailed investigation has been carried out to find out why earlier experiments in similar devices were
limited to only weak double layers.
We have also investigated the phenomenon of the so-called psuedo-double layers and have shown that they are potential jumps
over the thickness of the order of Debye length and precede plasma expanding with velocity many times the ion-acoustic velocity.
They do not represent metastable states of the plasma as suggested by earlier investigators. 相似文献
In this Letter, a novel modified anodization was utilized to synthesize high‐aspect‐ratio, top‐open and ultraflat‐surface TiO2 nanotubes. The interruption of voltage during anodization leads to the formation of a double‐layered structure. Due to the weak mechanical connection between the upper and the underlying layer, the two parts can be easily detached. Compared with the conventional ultrasonication method to remove the clusters of nanotubes where rough surfaces resulted, this efficient and reliable strategy may facilitate further applications of TiO2 nanotubes in diverse conditions.
It is shown that rarefactive-type double layer structures exist in ultradense electron-positron plasma.For this purpose,an extended Korteweg de Vries equation is derived and solved analytically in the low amplitude limit by employing the appropriate fluid equations.A strong influence of quantum degeneracy pressure of electrons and positrons,quantum diffraction effects and concentration of background positive ions on double layer is noticed.It is also pointed out that the amplitude and steepness of the double layer increases with an increase in ion concentration or ion charge number.The results are examined numerically for some interesting cases of dense plasmas with illustrations. 相似文献
A simpler analytical approach is employed to obtain energy integral equation for a pseudo‐particle in a pseudo‐potential, which admits double layer (DL) solutions for the non‐linear low‐frequency electrostatic perturbations in non‐uniform plasma consisting of electrons and two kinds of ions. One of the ion species has field‐aligned shear flow and electrons are superthermal kappa distributed. This theoretical model is applied to the upper ionospheric oxygen‐dominated plasma that has small concentration of protons along with upward flow of oxygen ions. Under suitable boundary conditions, both rarefactive (density dip) and compressive (density hump) DLs are obtained solving energy integral equation using the plasma parameters of ionosphere around altitude of 800 km. The amplitude and width of the DLs depend upon the scale lengths of density and temperature gradients as well as on the ratio of equilibrium densities of oxygen and hydrogen. 相似文献
Double layers (DLs) are nonlinear structures, and are thought to be responsible for particle acceleration in laboratory plasmas and astrophysical plasmas. In this paper, the existence of spin dependent DLs structure is explored using separate spin evolution quantum hydrodynamic model. Based on reductive perturbation method, we derived an extended Korteweg–de Vries (eKdV) equation to demonstrate the existence and nature of DLs. We found that spin polarization significantly enhanced the amplitude of the electrostatic potential associated with DLs. Further, spin polarization also increases the depth and width of the Sagdeev potential. It is noted that the contribution of Bohm potential effect is essential for the formation of DLs structure. Our results may be helpful to explain the phenomenon of particle acceleration in dense astrophysical environments specifically in a white dwarf. 相似文献
Summary Mo/GaAs Schottky barriers have been prepared by d.c. sputtering, for different values of the sputtering voltage. Current-voltage
and capacitance-voltage measurements show that these barriers can have very good properties (near one ideality factor, very
low inverse saturation current) if suitable preparation conditions are chosen. A detailed study of the current-voltage characteristics
as a function of the temperature allows us to analyse the carrier transport mechanisms and to correlate them to the preparation
conditions. The experimental results show that the behaviour of the Mo/GaAs Schottky barriers, prepared by d.c. sputtering,
can be successfully explained on the basis of the unified defect model proposed for the GaAs schottky barriers.
Riassunto In questo lavoro vengono presentati risultati concernenti barriere Schottky Mo/GaAs preparate mediante ?sputtering? in continua,
per diversi valori delle tensioni di ?sputtering?. Le misure di caratteristiche corrente-tensione e capacità-tensione mostrano
che è possibile ottenere barriere con buone caratteristiche elettriche (fattore di idealità prossimo ad uno, corrente di saturazione
inversa molto bassa), purché siano scelte le giuste condizioni di deposizione. è stato anche condotto uno studio dettagliato
delle ricavare informazioni sul meccanismo di trasporto dei portatori di carica. I risultati sperimentali mostrano che il
comportamento di questo tipo di barriere è perfettamente spiegabile nell'ambito del modello unificato dei difetti nelle barriere
Schottky nel GaAs.
Резюме Барьеры Шоттки Mo/GaAs приготовлены с помощью распыления при различных значениях напряЗения распыления. Измерения зависимостей
тока от напряЗения и емкости от напряЗения показывают, что зти барьеры могут иметь очень хорощие свойства, если выбираются
соответствующие условия приготовления. Подробное исследование вольт-амперных характеристик в зависимости от температуры позволяет
проанализировать механизмы переноса заряда и связать их с усломиями приготовления. Зкспериментальые результаты показывают,
что поведение барьеров Шоттки Mo/GaAs, приготовленных с помощьюDC распыления, моЗно успешно объяснить на основе единой модели дефектов, предлоЗенной для барьеров Шоттки GaAs.