The anisotropic 3D Ising model

An expression for the free energy of an (001) oriented domain wall of the anisotropic 3D Ising model is derived. The order--disorder transition takes place when the domain wall free energy vanishes. In the anisotropic limit, where two of the three exchange energies (e.g. J_x and J_y ) are small compared to the third exchange energy (J_z ), the following asymptotically exact equation for the critical temperature is derived, sinh(2J_z /k _B T _c)sinh(2(J_x ?+?J_y )/k _B T _c))?=?1. This expression is in perfect agreement with a mathematically rigorous result (k _B T _c/J_z ?=?2[ln(J_z /(J_x ?+?J_y ))?ln(ln(J_z /(J_x ?+?J_y ))?+?O(1)]^?1) derived earlier by Weng, Griffiths and Fisher (Phys. Rev. 162, 475 (1967)) using an approach that relies on a refinement of the Peierls argument. The constant that was left undetermined in the Weng et al. result is estimated to vary from ～0.84 at ((H_x ?+?H_y )/H_z )?=?10^?2 to ～0.76 at ((H_x ?+?H_y )/H_z )?=?10^?20.     

Nuclear magnetic double resonance for a spin system subject to scalar relaxation of the second kind

The equation of motion of a reduced spin density operator characterizing the state of a group of spins scalar coupled to a second group of spins which are either relaxing rapidly and/or irradiated with a strong radiofrequency field is derived within the framework of the non-viscous liquid approximation. An analytic expression for the spectral densities entering this equation is derived within the extreme narrowing approximation for the case in which the relaxation rates of the nuclei in the second group of spins are much greater than any scalar couplings between them. The resultant equation is used to discuss the conditions needed in a high resolution nuclear magnetic double resonance experiment to decouple a spin-½ nucleus (A) from a rapidly relaxing quadrupolar nucleus (X) in the fast relaxation limit, defined by |2πJ_AX T _1X | ? 1, in which the A resonance consists of a single broadened line. It is found that, if (ω _A - ω _X )² ? T _1X ^-2 so that the x and y components of the J_AX coupling can be neglected, decoupling, in the sense that all broadening of the A resonance is removed, occurs only when the strength of the B ₂ field be such that γ _X ² B ₂ ² ? T _1X ^-2 and that the conventional decoupling criterion γ _X ² B ₂ ² ? 4π² J_AX ² is not applicable. However, if the x and y components of the A-X scalar coupling cannot be neglected because the condition (ω _A - ω _X )² ? T _1X ^-2 is not satisfied, it is found that the X spin can never be entirely decoupled. It is shown that such double resonance experiments enable both the coupling constants between spin-½ and quadrupolar nuclei and the relaxation times of the latter nuclei to be extracted in situations in which measurement of the half-widths of spin-1/2 transitions can only yield the product J_AX ² T _1X in the absence of irradiation of the quadrupolar nuclei.     

One-dimensional DLR invariant measures are regular

A system of infinite spins in one dimension is considered. The interaction is given by a pair potential –J _xyS_xS_y, whereS _x,S _y are the spins at the sitesx,y andJ _xy=J(|x–y|) whereJ(|x–y|) decreases asymptotically in an integrable way. The self-interaction makes the system superstable. It is proven that any invariant DLR measure for this system satisfies Ruelle's superstable estimates (regularity condition).     

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

In this paper, a simulation and analysis on the short-circuit current density (J_sc) of the P-GaSb window/P-Ga_xIn_1−xAs_1−ySb_y emitter/N-Ga_xIn_1−xAs_1−ySb_y base/N-GaSb substrate structure is performed. The simulations are carried out with a fixed spectral control filter at a radiator temperature (T_rad) of 950 °C, diode temperature (T_dio) of 27 °C and diode bandgap (E_g) of 0.5 eV. The radiation photons are injected from the front P-side. Expressions for minority carrier mobility and absorption coefficient of Ga_xIn_1−xAs_1−ySb_y semiconductors are derived from Caughey–Thomas and Adachi’s model, respectively. The P-Ga_xIn_1−xAs_1−ySb_y emitter with a much longer diffusion length is adopted as the main optical absorption region and the N-Ga_xIn_1−xAs_1−ySb_y base region contribute little to J_sc. The effect of P-GaSb window and P-Ga_xIn_1−xAs_1−ySb_y emitter region parameters on J_sc is mainly analyzed. Dependence of J_sc on thickness and carrier concentration of the window are analyzed; these two parameters need to be properly selected to improve J_sc. Contributions from the main carrier recombination mechanisms in the emitter region are considered; J_sc can be improved by suppressing the carrier recombination rate. Dependence of J_sc on the carrier concentration and layer thickness of the emitter P-region are also analyzed; these two parameters have strong effect on J_sc. Moreover, adding a back surface reflector (BSR) to the diode can improve J_sc. The simulated results are compared with the available experimental data and are found to be in good agreement. These theoretical simulations help us to better understand the electro-optical behavior of Ga_xIn_1−xAs_1−ySb_y TPV diode and can be utilized for performance enhancement through optimization of the device structure.     

Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

Off-resonance effects and their compensation in the multiple-pulse sequences INEPT,DEPT, and INADEQUATE

Off-resonance effects in the multiple-pulse sequences INEPT, DEPT, and INADEQUATE are discussed. For AX spin systems numerical results are presented which have been obtained from computer simulations applying the density matrix formalism. We emphasize the utility of such a numerical approach to picture phenomena due to experimental imperfections and to evaluate compensation schemes. For the compensation of off-resonance effects, we investigate the application of phase-cycling sequences and composite pulses of the types [π/2]_x[π]_y[π/2]_x and [π/2]_x[4π/3]_y[π/2]_x. Off-resonance effects are again shown to be a serious problem for the use of multiple-pulse techniques.     

Size quatized levels of the valence band and the optical gain in strained <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs structures under uniaxial compression

The band structure, size quatized levels, and wave functions in the conduction and valence bands of strained n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures are calculated numerically upon a uniaxial compression along the [110] direction. The calculation indicates a sublinear increase of the effective optical gap in the GaAs_0.84P_0.16 quantum well, strong mixing of states of light and heavy holes, and merging of the corresponding ground states in the quantum well of the valence band under a pressure of 4.5–5 kbar. The calculation of matrix elements of the electron-photon interaction operator for a system of possible interband transitions permits one to determine the optical gain for the TE and TM modes. The increase in this coefficient by two to fourfold under uniaxial compression agrees with the previously published experimental data on the increase of the electroluminescence intensity.     

The t‐U‐V‐J model in cuprates: Strengths of the interactions

The t‐U‐V‐J model fits together three major parts of the superconductivity puzzle of the cuprite compounds: (i) it describes the opening of a d‐wave pairing gap, (ii) it is consistent with the fact that the basic pairing mechanism arises from the antiferromagnetic exchange correlations, and (iii) it takes into account the charge fluctuations associated with double occupancy of a site which play an essential role in doped systems. The strengths of the interactions U, V and J in YBa₂Cu₃O_6.7 and La_2‐xSr_xCuO₄ (_x = 0.16) samples are obtained by requiring quantitative consistency between the angle‐resolved photoemission spectroscopy (ARPES) measurements, the sharp collective mode at the antiferromagnetic wave vector Q _AF=(π,π), and the observed inelastic neutron scattering resonance (INSR) positions of the incommensurate peaks at wave vectors Q _δ = ((1 ± δ)π,π) and Q _δ = (π(1 ± δ)π).     

On the kinetics of a two-level system with a diffusion-modulated interaction

For a two-level system corresponding to a particle of spin ½ in a random field in the Z direction, the relaxation function

has been estimated, the magnitude Ω(t) being the sum of the isotropic interactions of the particle in question with particles j executing diffusional motion. Specifically Ω(t)=ω₀ + Σ ω(Mj, rj), where ω₀ = constant, M_j is a random time-independent parameter, ω(M, r) decreases with r faster than r ^-3 and r _j = r _j (t) is a diffusional, random function. From the expression for <σ⁺(t)>, we establish general features of the relaxation phenomenon for diffusional processes, and calculate the relaxation rate 1/T ₂ and relaxation shift Δω to be 1/T ₂-iΔω = 4π CAv_M λ _M , where C is the concentration of particles and λ _M is the scattering length for an equation of the Schrödinger type with an imaginary potential -iω(M, r) instead of U/?, and diffusion coefficient instead of ?/2m. We also found that for the case of ‘external’ relaxation, the Redfield approach proved valid only under the simultaneous restrictions of low concentration and weak interaction.     

Influence of quantum fluctuations on the Néel temperature of a dilute two-dimensional anisotropic antiferromagnet

A quantum Monte Carlo procedure is used to calculate the energy, sublattice magnetization, Néel temperature, and the slopes of the S=[1/T _N(x=0)]dT _N(x)/dx curves as functions of the hole concentration and the exchange anisotropy Δ=1−J _x,y/J _z in the Heisenberg model with anisotropic negative interactions between nearest neighbors in a square lattice with dilution among the lattice sites. The slope diverges in the limit Δ→0: S∼ln(6.5/Δ). Fiz. Tverd. Tela (St. Petersburg) 39, 898–900 (May 1997)     

Composition dependent self‐regenerative property of perovskite‐type oxides

The self‐regenerative property of LaCo_{1–x –y}Pd_x Zn_y O_3±δ and LaFe_{1–x –y}Pd_x Zn_y O_3±δ solid solutions with monometallic Pd or bimetallic Pd/Zn substituents for Co or Fe is studied under a redox cycle by high angular annular dark‐field scanning transmission electron microscopy (STEM‐HAADF) and energy dispersive X‐ray spectroscopy (EDX) and X‐ray diffraction (XRD). These results reveal that the composition of perovskites determines the self‐regenerative property that occurs largely in LaCo_{1–x –y}Pd_x Zn_y O_3±δ but is limited greatly in LaFe_{1–x –y}Pd_x Zn_y O_3±δ. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Spin-wave analysis of easy-axis quantum antiferromagnets on the triangular lattice

We perform the standard spin wave analysis of the triangular Heisenberg quantum antiferromagnet with nearest neighbour coupling. The exchange interaction is taken to be J _{z=J x=J y} (0<1). We give a simple explanation of the non-trivial classical degeneracy pointed out by Miyashita and Kawamura and show that it is removed by quantum fluctuations, but that the degeneracy manifests itself through the appearance of a second gapless spin-wave branch. The existence of a second gapless mode has a drastic influence on the quasiclassical behaviour near the Ising limit: the energy gain with respect to the Ising state energy is found to be linear in , and the reduction of the sublattice magnetization on two of the three sublattices remains finite as 0. These findings essentially invalidate the original qualitative arguments [14] in favour of a spin-liquid ground state of the anisotropic triangular antiferromagnet.