Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

We study the effect of pressure on electronic and thermoelectric properties of Mg_2Si using the density functional theory and Boltzmann transport equations. The variation of lattice constant, band gap, bulk modulus with pressure is also analyzed. Further, the thermoelectric properties(Seebeck coefficient, electrical conductivity, electronic thermal conductivity) have been studied as a function of temperature and pressure up to 1200 K. The results show that Mg_2Si is an n-type semiconductor with a band gap of 0.21 eV. The negative value of the Seebeck coefficient at all pressures indicates that the conduction is due to electrons. With the increase in pressure, the Seebeck coefficient decreases and electrical conductivity increases. It is also seen that, there is practically no effect of pressure on the electronic contribution of thermal conductivity.The paper describes the calculation of the lattice thermal conductivity and figure of merit of Mg_2Si at zero pressure. The maximum value of figure of merit is attained 1.83 × 10~(-3) at 1000 K. The obtained results are in good agreement with the available experimental and theoretical results.     

压力下氯化钠型SnAs结构和电子性质的密度泛函理论研究

基于第一性原理计算方法研究了压力对氯化钠型SnAs结构和电子特性的影响。计算结果表明,晶格参数随着压力的增加而减小;状态密度显示随着压力的增加,As-p态的减小导致了SnAs 电导率降低。通过对电荷密度和Mulliken重叠布居的研究,分析了Sn和As原子之间的键合情况,表明了SnAs中共价键随着压力的增加而增强。进一步分析得知费米能级电子态密度的降低,可能导致了Tc的降低。     

Ca掺杂Si团簇的几何结构和电子性质的密度泛函理论研究

采用密度泛函理论(DFT)B3LYP方法在6-311+G(d,p)基组水平,对CaSi_n(n=1~10)的结构进行优化,得出各个尺寸下团簇处于最低能量的结构模型,并对其稳定性等物理化学性质进行理论研究,表明CaSi_2、CaSi_5和CaSi_9为幻数团簇.     

Elastic properties of Nb-based alloys by using the density functional theory

A first-principles density functional approach is used to study the electronic and the elastic properties of Nb₁₅X(X = Ti, Zr, Hf, V, Ta, Cr, Mo, and W) alloys. The elastic constants c₁₁ and c₁₂, the shear modulus C', and the elastic modulus E_〈100〉 are found to exhibit similar tendencies, each as a function of valence electron number per atom (EPA), while c₄₄ seems unclear. Both c₁₁ and c₁₂ of Nb₁₅X alloys increase monotonically with the increase of EPA. The C' and E_〈100〉 also show similar tendencies. The elastic constants (except c₄₄) increase slightly when alloying with neighbours of a higher d-transition series. Our results are supported by the bonding density distribution. When solute atoms change from Ti(Zr, Hf) to V(Ta) then to Cr(Mo, W), the bonding electron density between the central solute atom and its first neighbouring Nb atoms is increased and becomes more anisotropic, which indicates the strong interaction and thus enhances the elastic properties of Nb-Cr(Mo, W) alloys. Under uniaxial 〈100〉 tensile loading, alloyed elements with less (more) valence electrons decrease (increase) the ideal tensile strength.     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

First-principles investigation of the electronic, elastic and thermodynamic properties of VC under high pressure

An investigation of the electronic,elastic and thermodynamic properties of VC under high pressure has been conducted using first-principles calculations based on density functional theory (DFT) with the plane-wave basis set,as implemented in the CASTEP code. At elevated pressures,VC is predicted to undergo a structural transition from a relatively open NaCl-type structure to a more dense CsCl-type one. The predicted transition pressure is 520 GPa. The elastic constant,Debye temperature and heat capacity each as a function of pressure and/or temperature of VC are presented for the first time.     

First-principles calculations for electronic and optical properties of the zinc-blende structured BeS compound under pressure

The electronic and the optical properties of the cubic zinc-blende (ZB) BeS under high pressure have been investigated by using \it ab initio plane-wave pseudopotential density functional theory method in the generalised gradient approximation (GGA) for exchange-correlation interaction. The electronic band structure and the pressure dependence of the total and partial densities of state under pressure are successfully described. Our calculations show that the ZB BeS has large and indirect band gaps associated with (Γ → X) transitions in ambient conditions. The results obtained are consistent with the experimental data available and other calculations. The optical properties, including dielectric function, energy-loss function, complex refractive index, reflection and absorption spectra, are investigated and analysed at different external pressures. The results suggest that the optical absorption appears mostly in the ultra-violet region and the curve of refractive index shift toward high energies (blue shift) with pressure increasing.     

Structural and electronic properties of solid naphthalene under pressure: density functional calculations

The pressure effect on the geometrical and electronic structures of crystallinenaphthalene is calculated up to 30 GPa by performing density functional calculations. Thelattice parameters a, b, and c, decrease by 1.77 Å (–20.4%), 0.85 Å (–14.1%),and 0.91 Å (–8.2%), respectively, while the monoclinic angle β increasesby 3.95° in this pressureregion. At the highest pressure of 30 GPa the unit cell volume decreases by 62.7%. Thedetailed analysis of the molecular arrangement within crystal structure reveals that themolecular motion becomes more and more localized, and hints towards the evolution ofintermolecular interaction with pressure. Moreover, the electronic structure ofnaphthalene under high pressure is also discussed. A pressure induced decrease of the bandgap is observed.     

C60富勒烯-巴比妥酸及其二聚体几何结构和电子结构的密度泛函计算研究

采用基于密度泛函理论的广义梯度近似,对C₆₀富勒烯-巴比妥酸及其二聚体的几何结构和电子结构进行了计算研究.发现：C₆₀富勒烯-巴比妥酸只有一种稳定结构,且掺杂巴比妥酸基团对C₆₀分子构型的影响是局域的.C₆₀富勒烯-巴比妥酸的二聚体有三种同素异构体,分别以［6,5］—［6,5］,［6,6］—［6,5］和［6,6］—［6,6］三种方式键合,从能隙大小顺序和总能相对大小来看,［6,6］—［6,6］结构最为稳定.电子结构方面,在C₆₀富勒烯-巴比妥酸单体中,Donor-Acceptor电荷转移体系为C₆₀富勒烯-巴比妥酸,即电荷是从C₆₀向巴比妥酸转移.由前线轨道和自旋布居数得知,C₆₀富勒烯-巴比妥酸单体很好地保留了C₆₀的电磁性质,但稳定性下降,易发生二次加成反应形成二聚体.对于C₆₀富勒烯-巴比妥酸二聚体,Mulliken电荷分析显示,在加成四元环处的碳原子分别得到0104e和0106e电荷,而与它们邻近的碳原子则失去电子,带有正电荷,且距加成位置越近的碳原子失去的电荷越多.在远离加成位置处,碳原子的净电荷变化相对较小.与单体152eV能隙相比,二聚体中的能隙为1.45eV.其前线轨道分布与单体相比,最高占据轨道几乎未变,但最低未占据轨道发生了很大变化. 关键词： 几何结构 电子结构 密度泛函     

Structural transition of FeSe under high pressure

The density functional calculations of the energy band structure and density of state for the tetragonal PbO-type phase α-FeSe and hexagonal NiAs-type phase β-FeSe are reported in this paper. The structural phase transition from tetragonal to hexagonal FeSe under high pressure is investigated, it is found that the calculated transition pressure for the α → β phase transformation is 8.5 GPa. Some fluctuations in the transition pressure maybe occurred by different external factors such as temperature and stress condition. There is about 17% volume collapse accompanying the α → β phase transformation.     

用密度泛函理论研究氮化硅新相的电子结构、光学性质和相变

运用第一性原理赝势方法,对氮化硅新相(六方Pˉ6和Pˉ6′相)的电子结构、光学性质和相变过程进行分析,研究能带结构、介电函数谱、反射谱和能量损失函数的变化机理.研究发现,β→Pˉ6→δ相变是可行的,在室温下β→Pˉ6和Pˉ6→δ相变的临界压强分别为42.9和47.7 GPa;相界的斜率为正值表明Pˉ6→δ相变过程伴随着晶胞体积的塌缩;Pˉ6和Pˉ6′相分别属于直接带隙和间接带隙半导体,能隙宽度分别为4.98和4.01 eV;得到了两相的零频介电常数;反射谱表明,两相的强反射峰均位于真空紫外线区域,因此可以用作紫外光屏蔽或紫外探测材料;在可见光区域,两相表现为近似透明.     

Structural and electrical transport properties of charge density wave material LaAgSb_2 under high pressure

Layered lanthanum silver antimonide LaAgSb_2 exhibits both charge density wave(CDW) order and Dirac-cone-like band structure at ambient pressure.Here,we systematically investigate the pressure evolution of structural and electronic properties of LaAgSb_2 single crystal.We show that the CDW order is destabilized under compression,as evidenced by the gradual suppression of magnetoresistance.At P_C～22 GPa,synchrotron x-ray diffraction and Raman scattering measurements reveal a structural modification at room-temperature.Meanwhile,the sign change of the Hall coefficient is observed at 5 K.Our results demonstrate the tunability of CDW order in the pressurized LaAgSb_2 single crystal,which can be helpful for its potential applications in the next-generation devices.     

Investigations on structural,elastic, thermodynamic and electronic properties of TiN,Ti2N and Ti3N2 under high pressure by first-principles

The lattice parameters, cell volume, elastic constants, bulk modulus, shear modulus, Young's modulus and Poisson's ratio are calculated at zero pressure, and their values are in excellent agreement with the available data, for TiN, Ti₂N and Ti₃N₂. By using the elastic stability criteria, it is shown that the three structures are all stable. The brittle/ductile behaviors are assessed in the pressures from 0 GPa to 50 GPa. Our calculations present that the performances for TiN, Ti₂N and Ti₃N₂ become from brittle to ductile with pressure rise. The Debye temperature rises as pressure increase. With increasing N content, the enhancement of covalent interactions and decline of metallicity lead to the increase of the micro-hardness. Their constant volume heat capacities increase rapidly in the lower temperature, at a given pressure. At higher temperature, the heat capacities are close to the Dulong–Petit limit, and the heat capacities of TiN and Ti₂N are larger than that of c-BN. The thermal expansion coefficients of titanium nitrides are slightly larger than that of c-BN. The band structure and the total Density of States (DOS) are calculated at 0 GPa and 50 GPa. The results show that TiN and Ti₂N present metallic character. Ti₃N₂ present semiconducting character. The band structures have some discrepancies between 0 GPa and 50 GPa. The extent of energy dispersion increases slightly at 50 GPa, which means that the itinerant character of electrons becomes stronger at 50 GPa. The main bonding peaks of TiN, Ti₂N and Ti₃N₂ locate in the range from −10 to 10 eV, which originate from the contribution of valance electron numbers of Ti s, Ti p, Ti d, N s and N p orbits. We can also find that the pressure makes that the total DOS decrease at the Fermi level for Ti₂N. The bonding behavior of N–Ti compounds is a combination of covalent and ionic nature. As N content increases, valence band broadens, valence electron concentration increases, and covalent interactions become stronger. This is reflected in shortening of Ti–N bonds.     

Theoretical study on optical and electronic properties of bis-dipolar 1,8-naphthalimide derivatives

A series of donor–π–acceptor type of 1,8-naphthalimide derivatives with ethylene as π-conjugated bridges have been designed to explore their optical and electronic properties as luminescent materials for organic light-emitting diodes (OLEDs). The frontier molecular orbital analysis turned out that the vertical electronic transitions of absorption and emission are characteristic as intramolecular charge transfer. The calculations showed that their optical and electronic behaviours are clearly affected by the aromatic substitute groups, but not significantly to the stability of molecules. The calculated results suggest that all the selected candidates are promising as luminescent materials for OLEDs.     

Theoretical study of the structural phase transition and elastic properties of HfN under high pressures

The effect of hydrostatic pressure on the structures of HfN at 0 K was investigated by using the projector augmented wave (PAW) within the Perdew–Burke–Ernzerhof (PBE) form of the generalized gradient approximation (GGA). The transition pressure between NaCl (B1) and CsCl (B2) structures is predicted to be 277.3 GPa. This value is consistent with that reported by Kroll, while in contrast to the results obtained by Ojha et al. and Meenaatci et al. Moreover, the elastic properties of B1-HfN and B2-HfN under high pressures are successfully obtained. It is found that the elastic constants, bulk modulus B, shear modulus G, compressional and shear wave velocities increase monotonically with increasing pressure. The Debye temperature Θ calculated from the elastic constants of HfN is in good agreement with the experimental values. The anisotropies of B1-HfN and B2-HfN at zero pressure have also been discussed.     

压强下TaB和TaB2力学和超导性质的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波方法, 在广义梯度近似下研究了TaB和TaB2在不同压强下的弹性常数、原子结构、电子结构以及超导性质及其对两者物理性质不同进行了比较. 计算结果表明随着压强的增加, 弹性常数和体弹模量随之增加, 而相对晶格常数a/a0, b/b0, c/c0和相对体积V/V0随压强增加而减小. 在高压下, TaB沿着a轴方向的压缩性要比b轴方向大, 而b轴方向的压缩性要比c轴方向大; TaB2是沿着c轴方向的压缩性要比a轴方向的压缩性大. 电子结构分析表明TaB2的原子态杂化程度比TaB的原子态杂化程度要高, 这与TaB2的体弹模量比TaB的体弹模量高的结果相一致. 依据Bardeen-Cooper-Schrieffer超导理论, TaB和TaB2费米能级处态密度的值随着压强的增加而降低, 说明它们的超导转变温度Tc随着压强的增加而降低.     

β石墨炔衍生物结构稳定性及电子结构的密度泛函理论研究

石墨炔衍生物比石墨烯具有更多样化的原子结构,因而具有潜在的更丰富的电子结构.通过第一性原理密度泛函理论研究方法系统研究了β石墨炔衍生物的结构稳定性、原子构型和电子结构.本文计算的β石墨炔衍生物系列体系由六边形碳环(各边原子数N=1—10)通过顶点相连而成.对结构与能量的计算分析表明:当N为偶数时,β石墨炔拥有单、三键交替的C—C键结构,其能量比N为奇数时,拥有连续C=C双键的石墨炔衍生物更稳定.计算的能带结构和态密度显示:根据碳环各边原子个数N的奇偶性不同,β石墨炔可呈现金属性(N为奇数时)或半导体特性(N为偶数时).该奇偶依赖的原子构型和电学性质是由Jahn-Teller畸变效应导致,与碳环各边原子碳链的实际长度无关.计算发现部分半导体β石墨炔(N=2,6,10)呈现狄拉克锥能带特征,其带隙约10 meV,且具有0.255×10~6—0.414×10~6m/s的高电子速度,约为石墨烯电子速度的30%—50%.本密度泛函理论研究表明,将sp杂化碳原子引入石墨烯六边形碳环的边上,可通过控制六边形各边原子个数的奇偶性调制其金属和半导体电子特性或狄拉克锥的形成,为免掺杂和缺陷调控纳米碳材料的电学性质和设计碳基纳米电子器件提供了理论依据.     

Geometries, stabilities, and electronic properties of Be-doped gold clusters: a density functional theory study

We have systematically investigated the geometrical structures, relative stabilities and electronic properties of small bimetallic AunBe (n = 1, 2, . . . , 8) clusters using a density functional method at BP86 level. The optimized geometries reveal that the impurity beryllium atom dramatically affects the structures of the Aun clusters. The averaged binding energies, fragmentation energies, second-order difference of energies, the highest occupied-lowest unoccupied molecular orbital energy gaps and chemical hardness are investigated. All of them exhibit a pronounced odd-even alternation, manifesting that the clusters with even number of gold atoms possess relatively higher stabilities. Especially, the linear Au2Be cluster is magic cluster with the most stable chemical stability. According to the natural population analysis, it is found that charge-transferring direction between Au atom and Be atom changes at the size of n = 4.     

A density functional theory study of formaldehyde adsorption on ceria

Molecular adsorption of formaldehyde on the stoichiometric CeO₂(1 1 1) and CeO₂(1 1 0) surfaces was studied using periodic density functional theory. Two adsorption modes (strong chemisorbed and weak physisorbed) were identified on both surfaces. This is consistent with recent experimental observations. On the (1 1 1) surface, formaldehyde strongly chemisorbs with an adsorption energy of 0.86 eV to form a dioxymethylene-like structure, in which a surface O lifts from the surface to bind with the C of formaldehyde. A weak physisorbed state with adsorption energy of 0.28 eV was found with the O of formaldehyde interacting with a surface Ce. On the (1 1 0) surface, dioxymethyelene formation was also observed, with an adsorption energy of 1.31 eV. The weakly adsorbed state of formaldehyde on the (1 1 0) surface was energetically comparable to the weak adsorption state on the (1 1 1) surface. Analysis of the local density of states and charge density differences after adsorption shows that strong covalent bonding occurs between the C of formaldehyde and surface O when dioxymethylene forms. Calculated vibrational frequencies also confirm dioxymethylene formation. Our results show that as the coverage increases, the adsorption of formaldehyde on the (1 1 1) surface becomes weak, but is nearly unaffected on the (1 1 0) surface.     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.