Thermal conductive performance of deposited amorphous carbon materials by molecular dynamics simulation

A series of diamond-like carbon (DLC) films with different microstructure were prepared by depositing carbon atoms on diamond surface with incident energy ranging from 1 to 100 eV. The thermal conductivity of the deposited films and the Kapitza resistance between the film and the diamond substrate were investigated. Results show that the average density, the average fraction of sp³ bonding and the thermal conductivity of the DLC films increase first, reaching a maximum around 20–40 eV before decreasing, while the Kapitza resistance decreases gradually with increased deposition energy. The analysis suggests that the thermal resistance of the interface layer is in the order of 10^?10 m²K/W, which is not ignorable when measuring the thermal conductivity of the deposited film especially when the thickness of the DLC film is not large enough. The fraction of sp³ bonding in the DLC film decreases gradually normal to the diamond surface. However, the thermal conductivity of the film in normal direction is not affected obviously by this kind of structural variation but depends linearly on the average fraction of sp³ bonding in the entire film. The dependence of the thermal conductivity on the fraction of sp³ bonding was analysed by the phonon theory.     

Study of mechanical properties of amorphous copper with molecular dynamics simulation

The formation and mechanical properties of amorphous copper are studied using molecular dynamics simulation. The simulations of tension and shearing show that more pronounced plasticity is found under shearing, compared to tension. Apparent strain hardening and strain rate effect are observed. Interestingly, the variations of number density of atoms during deformation indicate free volume creation, especially under higher strain rate. In particular, it is found that shear induced dilatation does appear in the amorphous metal.     

Study of mechanical properties of amorphous copper with molecular dynamics simulation

The formation and mechanical properties of amorphous copper are studied using molecular dynamics simulation. The simulations of tension and shearing show that more pronounced plasticity is found under shearing, compared to tension. Apparent strain hardening and strain rate effect are observed. Interestingly, the variations of number density of atoms during deformation indicate free volume creation, especially under higher strain rate. In particular, it is found that shear induced dilatation does appear in the amorphous metal.     

掺氮四面体非晶碳的第一性原理研究

采用基于第一性原理的分子动力学方法对掺氮四面体非晶碳进行结构建模,并对其显微结构和电子结构进行了研究. 氮在非晶碳网络中的配位形态与密度没有明显关系,主要是以三配位形态存在,其次是两配位,四配位氮的比例很小. 掺氮后碳网络结构sp²含量大大增加,随着氮含量的增加,费米能级附近态密度增加. 氮掺入后并未使费米能级发生明显移动. 关键词： 掺氮四面体非晶碳 第一性原理 密度泛函理论 电子结构     

双壁碳纳米管电浸润现象的分子动力学模拟

在单壁碳纳米管电浸润现象原子模拟的基础上,对双壁碳纳米管的电浸润现象进行了计算机模拟.运用经典分子动力学方法结合一个宏观的电毛细管模型模拟了双壁碳纳米管在水银中的电浸润过程,对不同内管尺寸情况下的浸润现象作了研究和比较.计算结果表明双壁碳管和单壁碳管的电浸润过程存在很大的不同,双壁碳管的内管在电浸润过程中起到重要的作用：当改变双壁碳管中内管的尺寸时,浸润现象会产生很大的改变. 关键词： 双壁碳纳米管 电浸润 分子动力学     

碳纳米管热传导的分子动力学模拟研究

采用改进的经验键序作用势描述碳原子间的相互作用,应用分子动力学方法和Green-Kubo函数计算了碳纳米管的热导率.在模拟中,使用了重叠计算的方法来计算热流相关函数,大大减少了模拟步数.计算结果表明,碳纳米管的热导率以原子间作用力相互做功所引起的热流形式为主;热导率的值随着直径的增加而减小;在室温下,热导率的值随着温度的增加而增加,达到室温后逐渐收敛于定值.计算的单壁碳纳米管热导率在1000W/mK至4000W/mK之间,计算结果与实验结果基本符合. 关键词： 分子动力学 碳纳米管 热导率     

碳纳米锥力学特性的分子动力学研究

结合原子间短程作用势(Brenner势)和长程作用势(Lennard-Jones势),利用分子动力学方法对各种锥角的碳纳米锥进行拉伸和压缩实验,获得其载荷-应变关系曲线、受拉/压载荷极限、应变极限和构形演变等力学特性,并与等量原子组成的碳纳米管进行比较研究.研究结果表明,等量碳原子组成的碳纳米锥的受拉/压载荷极限随着锥角的增大先是增大后减小,受拉/压应变极限则随着锥角的增大而增大.与碳纳米锥相比,等量碳原子组成的碳纳米管的受拉/压载荷极限和应变极限显得既不突出也不逊色.在受压构形演化方面,与碳纳米管丰富的径向屈曲/扭转/侧向屈曲组合形变不同,112.88°和83.62°锥角的碳纳米锥受压沿轴向完美内陷,而60.0°和38.94°锥角的碳纳米锥受压发生侧向屈曲.     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论,采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP),对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加,sp³碳原子增加,费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度,缺陷态在费米能级形 关键词： 非晶碳 密度泛函理论 电子结构     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论，采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP)，对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加，sp³碳原子增加，费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度，缺陷态在费米能级形     

高能氮离子轰击对四面体非晶碳膜的表面改性和摩擦系数影响的研究

利用过滤阴极真空电弧技术制备了sp³键含量不小于80%的四面体非晶碳(ta-C)膜.利用冷阴极潘宁离子源产生不同能量的氮离子对制备的ta-C薄膜进行轰击,通过X射线光电子能谱和原子力显微镜对薄膜表面结构与形貌进行分析研究.研究表明,随着氮离子的轰击能量的增大,薄膜中的CN键结构略有增大,形成了轻N掺杂;同时,在薄膜表层发生了sp³键结构向sp²键结构的转化;薄膜的表面粗糙度在经过氮离子轰击后从0.2 nm减小至0.18 nm,然后随着轰击能 关键词： 四面体非晶碳 X射线光电子能谱 摩擦系数     

碳纳米管从硅基板上剥离的拉伸分子动力学模拟研究

采用拉伸分子动力学方法研究了单壁碳纳米管(8, 8)在室温下从硅基板上被剥离的过程.当碳纳米管(CNT)在硅基底上被剥离时, 剥离距离和理想弹簧所测平均剥离力之间呈现一定规律的关系曲线,并出现了较大的正、负峰值. 比较了不同剥离速度下的平均剥离力,并拟合了其峰值与速度的关系. 拉伸分子动力学模拟结果显示,所需剥离力的最大值与速度之间呈现一定的线性关系, 模拟结果同生物物理学上类似的剥离实验结果符合较好,但相比于高分子, CNT和硅(Si)组成的界面吸附性能更强.讨论了碳纳米管长度、 半径及缺陷对剥离过程的影响,研究表明:所需最大的剥离力与CNT的长度无关, 但随CNT半径的增加,需要的最大剥离力线性增加; 5-7-7-5缺陷对剥离力最大值影响较小,而半径变化缺陷会削减最大剥离力. 在原子尺度对未来的试验进行了理论预测,为碳纳米管在硅微电子工业中的应用提供了理论基础.     

金刚石表面无定形碳氢薄膜生长的分子动力学模拟

利用分子动力学模拟方法研究了CH₂基团轰击金刚石(111)面所形成的无定形碳氢薄膜(a-C:H)的生长过程. 结构分析表明, 得到的无定形碳氢薄膜中碳原子的局域结构(如C–C第一近邻数)与其中氢原子的含量密切相关. CH₂ 基团入射能量的增加会导致得到的薄膜的氢含量降低, 从而改变薄膜中类sp³成键碳原子的比例.     

First-principles study of structural and opto-electronic characteristics of ultra-thin amorphous carbon films

Most amorphous carbon(a-C)applications require films with ultra-thin thicknesses;however,the electronic structure and opto-electronic characteristics of such films remain unclear so far.To address this issue,we developed a theoretical model based on the density functional theory and molecular dynamic simulations,in order to calculate the electronic structure and opto-electronic characteristics of the ultra-thin a-C films at different densities and temperatures.Temperature was found to have a weak influence over the resulting electronic structure and opto-electronic characteristics,whereas density had a significant influence on these aspects.The volume fraction of sp3 bonding increased with density,whereas that of sp2 bonding initially increased,reached a peak value of 2.52 g/cm³,and then decreased rapidly.Moreover,the extinction coefficients of the ultra-thin a-C films were found to be density-sensitive in the long-wavelength regime.This implies that switching the volume ratio of sp2 to sp3 bonding can effectively alter the transmittances of ultra-thin a-C films,and this can serve as a novel approach toward photonic memory applications.Nevertheless,the electrical resistivity of the ultra-thin a-C films appeared independent of temperature.This implicitly indicates that the electrical switching behavior of a-C films previously utilized for non-volatile storage applications is likely due to an electrically induced effect and not a purely thermal consequence.     

非晶Ti3Al合金的变形晶化机理的原子模拟

利用分子动力学方法研究了非晶Ti₃Al合金拉伸过程中的晶化行为，模拟结果表明局部塑性变形导致非晶合金晶化.从微观结构演化的角度分析了拉伸过程中的晶化机理，局部剪切导致拉伸过程中晶粒发生成核与合并，最终生成的晶粒具有面心立方结构.晶核的生长过程伴随着应力强化现象，非晶相中的纳米晶粒能提高非晶合金材料的强度. 关键词： 非晶合金 变形晶化 分子动力学     

脉冲激光晶化超薄非晶硅膜的分子动力学研究

利用准分子脉冲激光晶化非晶硅薄膜是制备高密度尺寸可控的硅基纳米结构的有效方法之一.本文将脉冲激光对非晶硅超薄膜的影响处理为热传导问题,采用了基于Tersoff势函数的分子动力学方法模拟了在非晶氮化硅衬底上2.7 nm超薄非晶硅膜的脉冲激光晶化过程.研究了不同激光能量对非晶硅薄膜晶化形成纳米硅的影响,发现在合适的激光能量窗口下,可以获得高密度尺寸可控的纳米硅薄膜,进而模拟了在此能量作用下非晶硅膜中成核与生长的机理与微观过程,并对晶化所获得的纳米硅薄膜的微结构进行了分析. 关键词： 非晶硅 分子动力学 脉冲激光晶化     

Molecular dynamics study of ice structural evolution

Molecular dynamics simulation is employed to study the structural evolution of low density amorphous ice during its compression from one atmosphere to 2.5 GPa. Calculated results show that high density amorphous ice is formed at an intermediate pressure of -1.0 GPa; the O-O-O bond angle ranges from 83° to 113°, and the O-H… O bond is bent from 112° to 160°. Very high density amorphous ice is obtained by quenching to 80 K and decompressing the ice to ambient pressure from 160 K/1.3 GPa or 160 K/1.7 GPa; and the next-nearest O-O length is found to be 0.310 nm, just 0.035 nm beyond the nearest O-O distance of 0.275 nm.     

磁过滤器电流对非晶碳薄膜摩擦学特性影响的研究

研究了过滤阴极真空电弧技术中,不同的磁过滤器电流下(5—13 A),制备的四面体非晶碳(ta-C)薄膜对摩擦学特性的影响.通过对薄膜厚度,薄膜结构以及薄膜表面粗糙度随磁过滤电流的变化结果进行了测试,结果表明,随着磁过滤器电流的增大,薄膜的sp³键含量逐渐减少,表面粗糙度从0.13增大到0.38.磁过滤器电流在5 A时,薄膜的摩擦系数最小约为0.08,当电流增大到7 A时,摩擦系数显著增大,磁过滤器电流从7 A增大到13 A时,薄膜的摩擦系数再次减小约为0.1. 关键词： 四面体非晶碳 过滤阴极真空电弧 磁过滤器电流 摩擦系数     

Synthesis and structure of nitrogenated tetrahedral amorphous carbon films prepared by nitrogen ion bombardment

The tetrahedral amorphous carbon (ta-C) films with more than 80% sp³ fraction firstly were deposited by filtered cathode vacuum arc (FCVA) technique. Then the energetic nitrogen (N) ion was used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and structure of the films were analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy (XPS). The result shows that the bombardment of energetic nitrogen ions can induce the formation of CN bonds, the conversion of C-C bonds to CC bonds, and the increase of size of sp² cluster. The CN bonds are made of CN bonds and C-N bonds. The content of CN bonds increases with the increment of N ion bombardment energy, but the content of C-N bonds is inversely proportional to the increment of nitrogen ion energy. In addition, C≡N bonds are not existed in the films. By the investigation of AFM (atom force microscopy), the RMS (root mean square) of surface roughness of the ta-C film is about 0.21 nm. When the bombarding energy of N ion is 1000 eV, the RMS of surface roughness of the ta-C:N film decreases from 0.21 to 0.18 nm. But along with the increment of the N ion energy ranging from 1400 to 2200 eV again, the RMS of surface roughness of the ta-C:N film increases from 0.19 to 0.33 nm.     

The dynamics of tetrahedral XY4 molecules

A physical understanding of the nature of the force constants and kinetic constants in molecules leads to a stringent application of the provisions of the group theoretical techniques introduced by Wilson in the study of molecular vibrations. This procedure is applied here to the evaluation of force constants and the mean amplitudes of eighteen tetrahedral XY₄ molecules with highly satisfactory results.     

氮离子轰击能量对ta-C:N薄膜结构的影响

利用磁过滤真空阴极电弧技术制备了sp³键含量不小于80%的四面体非晶碳薄膜(ta-C), 然后通过氮离子束改性技术制备了氮掺杂的四面体非晶碳(ta-C:N)薄膜. 利用Raman光谱和X射线光电子能谱对薄膜结构的分析,研究了氮离子轰击能量对ta-C:N薄膜结构的影响. 氮离子对ta-C薄膜的轰击,形成了氮掺杂的ta-C:N薄膜. 氮离子轰击诱导了薄膜中sp³键向sp²键转化, 以及CN键的形成.在ta-C:N薄膜中,氮掺杂的深度和浓度随着氮离子能量的增大而增大. ta-C:N薄膜中sp²键的含量和sp²键团簇的尺寸随着氮离子轰击能量的增大而增加; 在ta-C:N薄膜中, CN键主要由C-N键和C＝N键构成, C-N 键的含量随着氮离子轰击能量的增大而减小,但是C＝N 键含量随着氮离子轰击能量的增大而增大.在ta-C:N薄膜中不含有C≡N键结构.