Cluster modelling of core electron photoabsorption of CO adsorbed on Cu(100)

Quantum chemical calculations of discrete and continuum near-edge X-ray absorption spectra of carbon monoxide adsorbed on Cu(100) are presented and discussed. The surface is modelled by clusters using one-electron effective core potentials for distant atoms, allowing cluster sizes up to 50 atoms to be treated. The employed theoretical approach, the direct, atomic orbital, static exchange technique, implementing the independent-particle approximation close to the basis set limit, is shown to provide good representations of the near edge X-ray absorption spectra both for free and adsorbed CO. The experimental observations of reduction of energy and intensity of the first π1 resonance and a compression of the discrete part of the spectra are reproduced by the calculations. The origin of these effects is discussed.     

Reflectance anisotropy spectra of the diamond (100)-(2x1) surface: evidence of strongly bound surface state excitons

We compare the results of ab initio calculations with measured reflection anisotropy spectra and show that strongly bound surface-state excitons occur on the clean diamond (100) surface. These excitons are found to have a binding energy close to 1 eV, the strongest ever observed at a semiconductor surface. Important electron-hole interaction effects on the line shape of the optical transitions above the surface-state gap are also found.     

Stable cation inversion at the MgAl2O4(100) surface

From an interplay of atom-resolved noncontact atomic force microscopy, surface x-ray diffraction experiments, and density functional theory calculations, we reveal the detailed atomic-scale structure of the (100) surface of an insulating ternary metal oxide, MgAl2O4 (spinel). We surprisingly find that the MgAl2O4(100) surface is terminated by an Al and O-rich structure with a thermodynamically favored amount of Al atoms interchanged with Mg. This finding implies that so-called Mg-Al antisites, which are defects in the bulk of MgAl2O4, become a thermodynamically stable and integral part of the surface.     

Image-potential-induced surface state at Si(100)

We have identified a surface state on Si(100) (2×1) at a binding energy of 0.69±0.05 eV with respect to the vacuum level. Band-structure calculations within the GW method reveal that almost 80% of the probability density of the resonance is located in front of the surface. We therefore assign the surface resonance to an image-potential state. It has a lifetime of about 10 fs and contributes significantly to two-photon photoemission from Si(100). PACS 73.20.At; 79.60.Bm; 79.60.Dp; 79.60.Ht     

Hydrogen-induced reconstruction of the W(100) surface,studied by surface core level spectroscopy

We report W(4?) surface core level shifts which yield new information on the energetics of the W(100) (1 × 1) → C(2 × 2)H phase transition. At small hydrogen coverages we find two co-existing surface core levels from atoms on normal lattice sites and from atoms in reconstructed domains. These surface levels are shifted to smaller binding energy (toward E_F) by 0.35 eV and 0.13 eV relative to the bulk level, respectively. The most stable configuration is obtained at a fractional coverage θ_H ? 0.2, at which all surface atoms are shown to be paired with neighboring atoms in the surface plane.     

DC-electric-field-modified second-harmonic generation at the Si(100) surface

1 resonances for clean and H covered surfaces shift as a function of the dc field in agreement with experiment. This suggests the presence of built-in electric fields whose strength depends on the H coverage, and which are strongly localized in the subsurface region. Received: 20 September 1998     

Photon-stimulated desorption of methanol on Si(111)7 × 7 and Si(100)2 × 1 at the C 1s and O 1s thresholds

Photostimulated desorption experiments have been performed on deuterated methanol adsorbed on Si(111)7 × 7 and Si(100)2 × 1 at the C 1s and O 1s thresholds. D⁺ and the masses of the series CD⁺_x are produced in the photofragmentation process in both energy ranges. A comparison has been made with the photofragmentation spectra of methanol in the gas phase and two different desorption mechanisms have been hypothesized for the desorption of D⁺ and higher masses from the silicon surfaces at the C 1s threshold.     

Magnetic moments at the surface of antiferromagnetic NiO(100)

The orientation of magnetic moments at the (100) surface of antiferromagnetic NiO single crystals is studied by x-ray linear magnetic dichroism in photoemission microscopy. T domains are observed terminating at the surface, with domain boundaries running mostly along in-plane [10] directions. From the detailed polarization dependence we find that the magnetic surface structure of a cleaved crystal is bulk terminated. This is in contrast to sputtered surfaces, where magnetic moments lie within the surface plane, forming a magnetically relaxed structure. These findings are of importance for understanding the exchange bias phenomenon.     

Two-state double-continuum Fano resonance at the Si(100) surface

Fano resonances are well-known manifestations of the interference between a direct and an indirect ionization process. Here we report on a more complicated interference pattern observed in two-photon photoemission at the Si(100) surface. This two-dimensional Fano profile involves two discrete surface resonances which couple as initial and intermediate states to the silicon valence and conduction band, respectively. Tuning the photon energy across the surface resonance reveals asymmetric line profiles with pronounced destructive interference in the two-photon photoelectron intensities of both initial and intermediate states. The interference pattern is explained by an analytic extension of Fano's model to describe the coupling of two discrete states with two continua. This coupling strongly modifies the photoabsorption and is of general importance for light conversion in nanostructures and light-harvesting devices.     

Relaxation and thermal vibrations at the NaF(100) surface

The relaxation and the thermal vibrations of the NaF(100) surface are investigated in the temperature range between 25 K and 230 K by means of low-energy electron diffraction (LEED) and a subsequent I(V) structure analysis based on the tensor LEED approach (TLEED). According to the experiments, the NaF(100) surface is not significantly relaxed and has the ideal truncated bulk structure. The thermal vibrational amplitudes of the ions in the topmost layer are significantly enhanced compared to the bulk by a factor of 1.35 ± 0.15 and are equal within the error-bars for Na⁺ and F^? ions. Moreover, the relaxation and the dynamics of the NaF(100) surface are investigated using periodic density functional theory (DFT) calculations using pseudopotentials. In agreement with the experimental findings, the calculated relaxation of the NaF(100) surface is weak with static shifts of the ions of 0.01 Å to 0.02 Å. In the topmost layer, the Na⁺ ions are predicted to be slightly inward shifted, whereas the F^? ions are outward shifted, in accordance to predictions of previous shell-model calculations. A Born Oppenheimer molecular dynamics (BO-MD) simulation of the dynamics at the NaF(100) surface leads to a smaller enhancement of thermal motions of the ions at the surface compared to the experiment.     

Photoemission spectroscopy at MOVPE-prepared InGaAs(100) surface reconstructions

Angular resolved ultraviolet photoemission spectroscopy at BESSY was employed to study the electronic structure of the three different, (4 × 3)-, (2 × 4)-, and (4 × 2)-surface reconstructions of In_0.53 Ga_0.47As, which was grown lattice-matched to InP(100). The surfaces have been prepared using metal organic vapor phase epitaxy (MOVPE). For spectroscopy, a dedicated transfer system was employed and samples were transferred contamination-free from the MOVPE reactor to UHV-based analysis tools. For the different surface reconstructions, the Γ ? Δ ? X direction was scanned while varying the photon energy between 10 eV and 28 eV. We observed two surface states in the photoelectron spectra on all of these surface reconstructions in addition to the bulk derived valence band emissions. Different binding energies of the surface states originating from different surface band bending were detected and described.     

The splitting of the 1s excitons in silicon

A splitting into a doublet of the indirect 1s excitons in Si has been revealed by a detailed analysis of optical derivative spectra of the indirect absorption edge. The observed splitting of 0.35 ± 0.05 meV agrees well with theoretical results based on the effective mass approximation. The half width of the split components is 0.13 meV which is considerably smaller than previously reported.     

Dynamics of exciton formation at the Si(100) c(4 x 2) surface

Carrier recombination at the Si(100) c(4 x 2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.     

Ellipsometric spectroscopy of the ZnO nonpolar(1\bar 100) surface

Ellipsometric spectroscopy has been performed on nonpolar ZnO surfaces in the spectral range 1.5 eV<ħω<4.0 eV. Absolute measurements with two different crystal orientations in air allow the determination of the optical constantsn _∥,k _∥ andn _⊥,k _⊥ for light polarized parallel and perpendicular to thec-axis. The ellipsometric angles Δ and ψ are changed remarkably on ultrahigh vacuum cleaved surfaces near the band gap energy of ∼3.4eV when oxygen or atomic hydrogen is adsorbed or when the crystal is annealed. This observation is interpreted in terms of a field effect on the optical constants in the space charge layer.     

Nucleation of Pd dimers at defect sites of the MgO(100) surface

Point defects on oxide surfaces are presumed to be preferential nucleation sites for supported metal clusters. Under typical growth conditions, dimers constitute the first step in island nucleation. First-principles calculations on the formation of Pd dimers on regular and defect sites of the MgO(100) surface show that nucleation occurs with large dimer binding energies at divacancies and charged oxygen vacancies (F+ centers), while it is less favorable on steps and neutral F centers. The extensive database of defect trapping/attachment properties gives a firm basis to rationalize recent atomic-force microscopy findings and provides guidelines valid, in general, for ionic substrates.