New Cholesteric and Nematic Lyotropic Mesophases from Di-Sodium N-Lauroyl-Aspartate

Lyotropic liquid crystals are prepared from racemic and optically active di-sodium N-lauroyl aspartate (SNLA). The optically active levo enantiomer is a suitable amphiphile for obtaining cholesteric lyotropic mesophases. In the present work, different types of mesophases, including cholesteric and nematic, were prepared and their type I or II magnetic behavior characterized by deuterium and ²³Na NMR. The polarizing microscope textures were investigated, particularly with regards to magnetic field effects upon the samples. The usual chevron pattern was obtained for particular sample orientations and several characteristic effects were observed for the type I cholesteric lyomesophase in the first few minutes following removal of the sample from the magnetic field. Although the head group of di-sodium N-lauroyl aspartate possesses two negative charges, compositions are not too different from those reported for other amphiphile lyotropic systems.     

Influence of the Orientational Order on the Optical Properties of Cholesteric Liquid Crystals

An orientational order parameter for cholesteric liquid crystals is defined in analogy to nematic mesophases. The influence of this parameter on the selective reflexion and the optical rotatory dispersion is described. Its relative change with temperature is evaluated from ORD measurements for an induced cholesteric soIution and is found to be similar to that known for nematic liquid crystals.     

On the temperature Dependence of the orientational Order Parameter in the Nematic Phase of Cyanophenyl Behzoates

The orientational order parameters fot two liquid crystal materials, 4-cyanophenyl 4-butylbenzoate and 4-cyanophenyl 4-pentylbenzoate, have been derived by measuring the change in the refractive index as function of temperature. The order parameters are compared with MaierSaupe theory, and the sharpness of the transitions has been shown using the Haller's plot.     

Structure Effect of Solute on Orientational Order in Binary Mixture by 2H-NMR and Molecular Simulations

Abstract

The orientational order parameters of six solutes with different shapes and sizes dissolved in two nematic solvents have been measured as a function of temperature. The parameter, S^xx-S^yy is correlated with the molecular geometrical structure, while S^zz is affected by not only the geometry but also the anisotropy in the polarizability. The molecular dynamics simulations are carried out using a realistic atom-atom potential for evaluating the ordering properties in the nematic phase. The results provide reasonable values of S^zz corresponding to experimental ones for solutes and solvents, and also a prediction of uniaxiality for the nematic phase.     

Mesomorphism dependence on halogenated chalconyl esters in terms of molecular flexibility/rigidity

Vinyl carboxy central group containing a novel chalconyl ester homologous series: RO.C₆H₄.CH ? CH.COO.C₆H₄.CH ? CH.CO.C₆H₄.I (para) have been synthesized and studied with a view to understand and establish the relation between thermotropic liquid crystalline (LC) behaviors and the molecular structure. Novel chalconyl ester homologous series consists of thirteen homologs (C₁–C₁₈). C₁–C₃ homologs are nonmesogenic, C₄ homolog is enantiotropic nematogenic and the rest of the homologs (C₅–C₁₈) are enantiotropically smectogenic plus nematogenic. Phase transition temperatures and textures of LC phase were determined by an optical polarizing microscopy (POM) equipped with a heating stage. Cr-M/I, Sm-N, N-I transition curves in a phase diagram behaved in normal manner. Sm-N and N-I transition curves exhibited odd-even effect from C₄–C₁₀ or nearby C₁₀ homolog. Textures of nematic phase are threaded or Schlieren and that of the smectic phase are of the type smectic A or C. Analytical and spectral data confirms the molecular structure of homologs. Thermal stabilities for smectic and nematic mesophases are 155.0 and 180.7, respectively, and their corresponding mesophaselengths are varied from minimum to maximum at 17.0°C–39.0°C as well as 15.0°C–30.0°C. Thus, it is middle ordered melting type series. The group efficiency orders derived on the basis of smectic and nematic thermal stabilities are as under: Sm: -C₆H₄.I > -C₆H₄.Cl > -C₄H₃S and N:- C₆H₄.I > -C₆H₄.Cl > -C₄H₃S from comparative study of structurally similar analogous series     

Decrease in dielectric loss of CaCu3Ti4O12 by the addition of TeO2

CaCu₃Ti₄O₁₂ (CCTO) has challenged for the last few years the scientific community due to its large dielectric constant, which is almost temperature and frequency independent, from 100 K to 400 K and from 1 kHz to 1 MHz, respectively. This makes the material desirable for many electronic applications. However, the dissipation factor is very large, with tan δ values, at room temperature and 1 kHz, higher than 0.1.In our work we report how the addition of TeO₂ lowers the dielectric loss and, although there is a decrease of dielectric constant of doped samples relatively to the undoped one, high dielectric constant values are still being reached. The sample of doped CCTO with 1.5% of TeO₂ by weight, presents, at room temperature and 60 kHz, a large dielectric constant, over 3000, and a dissipation factor around 0.09, which represents a decrease on tan δ over 30% relatively to the CCTO undoped sample. Two relaxation processes were identified for all the samples, one at MHz region and the other one at low frequency region (< 1 kHz). DC bias voltage was applied up to 40 V and a strong dc bias influence on the low frequency region was observed both at dielectric and impedance responses of the undoped sample, which was much weaker than the dc bias effects on the 4% Te doped sample.Dielectric measurements will be discussed and correlated with the samples' microstructure, supported on internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models.     

The Effect of Free Convection on Solid/Liquid Interface in the Czochralski Crystal Growth Method

This paper regards the interaction of free and forced convection in the Czochralski configuration. A relationship between the crystal rotation rate and growth parameters at which the crystallization front remains flat, at which the crystallization front remains almost flat, has been studied. This relationship is compared with experimental data.     

紊流模型模拟分析旋转对提拉大直径单晶硅的影响

本文采用紊流模型对提拉大直径单晶硅时,对晶体旋转、坩埚旋转及二者共同作用三种情况下,熔体内的流线、等温线、氧的浓度分布、紊流粘性系数、紊动能等作了数值模拟,发现晶体的旋转能提高氧的径向均匀性,紊流粘性系数和紊动能随着坩埚转速的提高先增加后下降.晶体坩埚同时旋转时并不能有效降低紊流粘性系数,但能使子午面上的流动受到抑制,等温线更为平坦,有利于晶体生长.     

纳米ZnO合成中醇水体系和熔盐介质的粒径调控效应研究

采用液相法制备了纳米ZnO,在沉淀过程中采用乙醇-水混合溶液,煅烧过程中加入碱金属硝酸盐介质,以研究两者对粒径的调控作用和机理.并利用XRD、TEM、BET和PL等测试手段进行产物表征.结果表明:相同条件下,采用NaNO_3和LiNO_3熔盐辅助煅烧后,产物粒径较直接煅烧明显减小;同量的LiNO_3相对于NaNO_3,其产物粒径小于后者;当醇水比例增加时,由于介电常数的减小,产物粒径也明显减小.最后讨论了醇水体系和熔盐介质粒径调控的机理.     

Pb(Mg1/3Nb2/3)O3-0.33PbTiO3晶体三方相的压电性能研究

以坐标系二次旋转为理论基础研究了PMN-0.33PT晶体三方相的常用压电模量d15、d24、d31、d33、d36和机电耦合系数k15、k24、k31、k33、k36在三维空间的变化规律.通过MATLAB编程求得以上各系数关于坐标系旋转角度的函数表达式,绘制出了它们的三维空间分布图,并一一求得这些系数的最大值,以及与最大值相对应的旋转角.发现除d33和k33外,d31、d36、k31和k36也在空间变化显著.d31和k31旋转后的最大值比原坐标系下的数值分别扩大了15倍和6倍,对应的旋转角分别为(-4.5°/90°)、(22.5°/270°).d36 和k36在原坐标系下不存在,经旋转后的最大值可分别达到1340 pC/N 和0.73.该研究结果对PMN-0.33PT晶体在压电传感器、换能器中的应用具有重要的理论价值.     

Dielectric spectroscopy of low-losses sugar lyophiles: III: The influence of moisture on the dielectric response of freeze-dried lactose

This paper presents the results of a dielectric spectroscopy study of freeze-dried lactose with a range of moisture contents. Dielectric properties were measured over a wide range of frequency (10⁻¹ to 10⁶ Hz) and temperature (−120 °C to 120 °C). Four relaxation processes were analysed with respect to moisture content and corresponding relaxation mechanisms were suggested. Two processes (γ and β) were observed in the sub-T_g range of temperature and another two processes were observed near to and above the glass transition temperature, T_g. The relatively high-frequency γ-process was ascribed to the mobility of pendant hydroxymethyl groups and exhibited only a weak dependence on moisture content. The most moisture sensitive process was the second sub-T_g (Johari-Goldstein) β-process, whereby the relaxation time changed by 2 orders of magnitude as the moisture was increased by 7%. Also the third process (α-relaxation, near T_g) was sensitive to moisture content and was in good agreement with DSC data measured for freeze-dried lactose. The fourth process was a proton percolation process at the micro-crystals formed at the surface of amorphous particles during heating at the temperatures higher than T_g and shows the moisture dependence.     

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

The influence of the boron doping level in the range of 1 × 10¹⁵-2 × 10¹⁹ cm⁻³ on the position of the oxidation-induced stacking fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value C_crit defined by the ratio of the pull rate and the temperature gradient in the crystal at the solid/liquid interface. Boron concentrations higher than 10¹⁷ cm⁻³ shift the position of the R-OSF towards the wafer center without change of growth parameters. The critical value C_crit converts into a function C_crit(C_B, depending linearly on the boron concentration C_B. Crystal-originated particles (COP) and gate oxide integrity (GOI) yield distributions which are consistent with the R-OSF pattern. A low COP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical properties of vacancies and self-interstitials.     

RbCdF3:Ni2+晶体结构相变、光谱精细结构和EPR谱的研究

本文采用半自洽场(semi-SCF)3d轨道模型和μ-κ-α模型,利用完全对角化方法,建立了Oh、D4h对称晶体场局部结构参数与光谱精细结构、EPR谱之间的定量关系,统一解释了RbCdF3∶Ni2+晶体的光谱精细结构和EPR谱。所得理论结果与实验值符合很好。     

Effects of CaO on crystallization properties in BaO-SrO-TiO2-SiO2 glass-ceramics

The role of calcium oxide (CaO) was investigated in the crystallization of BaO-SrO-TiO₂-SiO₂ glass. The CaO dopant altered the oriented growth facets of crystal unit cells in the glass-ceramics. The crystallites are acicular in micron scale in the samples having as small as 1% CaO dopant, but are long granular in the nanometer scale in the sample without CaO. The glass-ceramics which have nano crystallites are observed with a less crystallization density qualitatively, a higher transmissivity in the wavelength range of 200-2600 nm, and 30% lower piezoelectric coefficient, d₃₃, at 9.5 ± 0.3 pC/N than those glass-ceramics having CaO in the study.     

Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE

A 4–6 μm thick a-plane (1 1 2¯ 0) AlN was grown on r-plane sapphire substrate by low-pressure hydride vapor phase epitaxy (LP-HVPE), using a direct growth without any nitridation and buffer layer, a single-step nitridation growth, a two-step nitridation growth and a two-step buffer growth method. For the two-step buffer growth procedure, smoother surface is observed with the lower full widths at half maximum (FWHM) of X-ray rocking curves (XRC) compared with the other two kinds of nitridation procedures. A smaller FWHM of in-plane XRC peak anisotropy features are reversed, which is consistent with the smaller in-plane stress anisotropic distribution in a-plane AlN, when the two-step nitridation or buffer growth method is used. In four kinds of initial growth procedures, the two-step buffer method is the suitable method for the growth of a-plane AlN by HVPE with the high crystal quality and more isotropic distribution.     

Effects of the presence/absence of hydroxyl or amine groups in mono/di-substituted benzenes on the α and β structural relaxation properties in liquids and glasses

Dielectric relaxation properties of six benzene-derivative liquids were studied in the temperature range above 80 K and in the frequency range (0.1 Hz)–(1 MHz); 3-isopropylphenol and 2-phenyl-1-propanol with hydroxyl group within their substituents, 3-isopropylaniline and dl-1-phenylethylamine with amine group, and isopropylbenzene and sec-butylbenzene only with alkyl group. Heat capacities were additionally measured of sec-butylbenzene in the range 10–300 K. The β relaxation process as well as the α one was found to be present in all the substances. A striking contrast was found between the substituent dependences of α and β glass transition temperatures T_gα and T_gβ. While the T_gα was considerably high in the substances with hydroxyl group, a little lower in those with amine group than with hydroxyl group, and relatively low in those with only alkyl group as the substituent, the T_gβ was essentially the same being in the range 73–77 K irrespective of the presence/absence of hydroxyl or amine groups within the substituents of a limited size of isopropyl group. In 2-phenyl-1-propanol and sec-butylbenzene the substituents of which have hydroxyl or methyl groups, respectively, extruding beyond the size, the bulkiness appears to raise the T_gβ to 100–105 K. The character is discussed based on the heterogeneous structure originating from short-range ordering in molecular aggregation.     

Effects of fluorine incorporation on the properties of amorphous carbon/p-type crystalline silicon heterojunction diodes

Heterojunction diodes fabricated by plasma enhanced chemical vapor deposition of hydrogenated amorphous carbon (a-C:H) and fluorine-doped amorphous carbons (a-C:H:F) on p-type silicon are analyzed in terms of their electronic and photovoltaic properties. Their structural and optical properties were identified by Raman spectroscopy, X-ray photoelectron spectroscopy, ellipsometry, and UV-VIS transmittance. The nature of the heterojunction is confirmed by the rectifying current-voltage characteristic of carbonaceous deposits/p-Si junction. The diodes show a behavior dependent on the amount of the fluorine content. The photovoltaic behavior of the junction is investigated as a function of both fluorine incorporation and thermal treatment of the a-C:H:F films after the deposition. Better photovoltaic effects were observed from annealed a-C:H:F heterojunction structures. The optical and structural characterization performed on films after the thermal treatment indicates that this behavior is most likely due to an extended graphitization.