Radiation-stimulated changes in the transmission of chalcogenide glasses of As2S3−Ge2S3

The radiative-optical properties of chalcogenide glass-like semiconductors of the As₂S₂−Ge₂S₃ system in the region of a topological 2D-3D-phase transition are investigated. It is shown that γ-irradiation of samples by an absorbed dose of 4.4 · 10⁶ Gy leads to a longwave shift of their optical-transmission edge in the spectrum. The effect observed depends on the structural type of the glasses investigated and changes considerably near the 2D-3D-phase transition. Two components of the transmission-edge shift are detected: a static component, which remains unchanged for a long time after irradiation of the samples, and a dynamic one, which gradually fades in 2–3 months. It is suggested that the microstructural mechanism of these changes is attributable to processes of coordination defect formation in the structural skeleton of the samples. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, pp. 657–660, September–October, 1999.     

Critical properties of superconducting Ba1−xKxFe2As2

Magnetisation and magneto-resistance measurements have been carried out on superconducting Ba_1?xK_xFe₂As₂ samples with x = 0.40 and 0.50. From high field magnetization hysteresis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The J_C determined from the high field data is >10⁴ A/cm² at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 T. From the variation of the T_C onset with applied field, dH_C2/dT at T_C was obtained to be ?7.708 T/K and ?5.57 T/K in the samples with x = 0.40 and 0.50.     

Factors determining the energy yield of luminophors based on single-crystal films of Al2−Y2O3−R2O3 oxides

We consider the factors determining the energy yield of crystallophosphors based on single-crystal films of oxides of the system Al₂−Y₂O₃−R₂O₃ (R is the rare-earth ions) that are used as different types of luminescent converters. Special features of producing the films by the method of liquid-phase epitaxy from Pb−B₂O₃ and Bi₂O₃-based fluxes are analyzed, and the advantages of this method for production of efficient luminophors, which are based on high-melting oxides doped with mercury-like impurities, are shown. It is established that the main factor that bounds the crystallophosphor luminous yield is the presence of donor-acceptor complexes of the Pb²⁺−Pb⁴⁺ and Fe³⁺−Fe²⁺-type that form different channels of dissipation of excitation energy. The means of minimizing the contribution of these ions to the processes of excitation-energy relaxation are discussed. Institute of Applied Physics, I. Franko L'vov State University, 49 General Chuprynka Str., L'vov, 290044, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 6, pp. 819–823, November–December, 1999.     

Study of YBa2Cu3O7−δ ceramics/Al interface

Properties of oxide layers at the interface between Al metal and YBa₂Cu₃O_7−δ ceramics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectra (XPS) and impedance measurements. There have been found the oriented grains having their c-plane parallel to the surface of YBa₂Cu₃O_7−δ. When Al metal was evaporated onto the ceramics sample, the aluminum oxide layer was produced at the interface between Al and YBa₂Cu₃O_7−δ because Al metal oxidizes more easily. The oxygen-deficiency was observed at the ceramics side of the interface as examined by X-ray photoelectron spectra. This oxygen-deficiency can be partly replenished by post annealing whereas it can be fully replenished for the sample to which the mechanical polishing is applied beforehand in order to remove the oriented grains. The thickness of aluminum oxide layer was evaluated by means of the impedance measurements using the alternating current three-terminal method.     

Stability of Thin-Film Cu–As2S3 and Ag–As2S3 Structures

Technical Physics - Thin-film Cu–As2S3 and Ag–As2S3 structures obtained by successively evaporating Cu(Ag) and As2S3 in vacuum on glass substrates have been studied. Samples of these...     

Superconductivity,magnetism and crystal chemistry of Ba1−xKxFe2As2

BaFe₂As₂ is the parent compound of the ‘122’ iron arsenide superconductors and crystallizes with the tetragonal ThCr₂Si₂-type structure, space group I4/mmm. A spin-density-wave transition at 140 K is accompanied by a symmetry reduction to space group Fmmm and simultaneously by antiferromagnetic ordering. Hole-doping induces superconductivity in Ba_1?xK_xFe₂As₂ with a maximum T_c of 38 K at x ≈ 0.4. The upper critical fields approach 75 T with rather small anisotropy of H_c2. At low potassium concentrations (x ? 0.2), superconductivity apparently co-exists with the orthorhombically distorted and magnetically ordered phase. At doping levels x ? 0.3, the structural distortion and antiferromagnetic ordering is completely suppressed and the T_c is maximized. No magnetically ordered domains could be detected in optimally doped Ba_1?xK_xFe₂As₂ (x ? 0.3) by ⁵⁷Fe Mössbauer spectroscopy in contrast μSR results obtained with single crystals. The magnetic hyperfine interactions investigated by ⁵⁷Fe Mössbauer spectroscopy are discussed and compared to the ZrCuSiAs-type materials.     

Normal state transport properties in single crystals of Ba1−xKxFe2As2 andNdFeAsO1−xFx

Hall effect and magnetoresistance Δρ/ρ(0) (MR) in the normal state have been measured on single crystals of Ba_1?xK_xFe₂As₂ and NdFeAsO_1?xF_x. Detailed analysis reveal the following conclusions: (1) For the parent phases of Ba_1?xK_x Fe₂As₂ and NdFeAsO_1?xF_x, large Hall effect and MR with strong temperature dependence were observed below a characteristic temperature corresponding to the antiferromagnetic/ structural transition. The field dependence of the Hall resistivity ρ_xy exhibits a non-linear behavior, which is accompanied by the violation of the B-square feature of the longitudinal magnetoresistivity Δρ_xx(B)/ρ_xx(0). A closer inspection further indicates that they are well related to each other and could be attributed to the multi-band effect or spin-related scattering. (2) The superconducting samples show much smaller Hall coefficient and MR in the normal state. The Hall coefficient shows a weaker temperature dependence compared to the parent phase, while the mean scattering rate 1/τ_H has a power-law like temperature dependence as 1/τ_H ∝ Tⁿ (n = 2–3). (3) For a Ba_1?xK_xFe₂ As₂ sample with T_c = 36 K, the field dependence of MR is complicated and the feature varies in different temperature regions. A drastic change of Δρ/ρ(0) was found between 80 K and 100 K, which corresponds very well to the maximum of the temperature derivative of the resistivity. This may be attributed to the spin-related scattering of electrons. (4) A comparison between the parent phase and the superconducting sample with T_c = 50 K in NdFeAsO_1?xF_x suggests that the electronic transport properties in the normal state cannot be easily understood with the simple multi-band model, while a picture concerning a suppression to the quasiparticle density of states at the Fermi energy is more reasonable.     

Fermi surface of Ba1−xKxFe2As2 as probed by angle-resolved photoemission

Here we apply high resolution angle-resolved photoemission spectroscopy (ARPES) using a wide excitation energy range to probe the electronic structure and the Fermi surface topology of the Ba_1?xK_xFe₂As₂ (T_c = 32 K) superconductor. We find significant deviations in the low energy band structure from that predicted in calculations. A set of Fermi surface sheets with unexpected topology is detected at the Brillouin zone boundary. At the X-symmetry point the Fermi surface is formed by a shallow electron-like pocket surrounded by four hole-like pockets elongated in Γ?X and Γ?Y directions.     

Relaxation phenomena in Cr3+ doped Al2O3−Fe 2 57 O3 systems

Mössbauer absorption spectra have been measured for Cr³⁺ doped Al₂O₃?Fe ₂ ⁵⁷ O₃ systems for different values of the Cr³⁺ concentration at room temperature. The cross relaxation between Fe³⁺ and Cr³⁺ ions, which destroys the paramagnetic hyperfine structure of Fe⁵⁷ observed in undoped Al₂O₃?Fe ₂ ⁵⁷ O₃, is thoroughly studied. The experimental results suggest a new kind of cross-relaxation process involving three spins, i.e. two Fe³⁺.ions and one Cr³⁺. The process, though it is a higher-order one, is highly effective because it is energy-conserving.     

Al,F-doped new perovskite lithium fast ion conductor Li3x La2/3−x□1/3−2x Ti1−y Al y O3−y F y (x=0.11)

Al, F-doped new perovskite lithium ion conductors (x=0.11) have been prepared by solid state reaction. It is found that a pure perovskite-structured phase with space group of P4mm(99) exits in the composition range of 0<y≤0.10. The sample with y=0.02 possesses the highest ionic conductivity of 1.06×10⁻³ S/cm at room temperature, and its decomposing voltage is 2.3 V. The factors affecting the conductivity of this system are discussed.     

Structural,morphologic and optical characterization of In(2−x)Al x S3

Aluminum-doped indium sulfide thin films are deposited on glass by spray pyrolysis technique. The structure and the surface morphology of these films were characterized by X-ray diffraction and atomic force microscopy. The effects of aluminum ratio z and substrate temperature T _s, on the film structure and grain size are discussed. The influence of aluminum ratio on surface morphology is revealed by scanning electron microscope. Besides, energy dispersive spectrometry technique is used to compare atomic aluminum concentration in the film with aluminum ratio z in spray solution. Optical properties are studied by a spectrophotometer in the wavelength range 350–850 nm, at room temperature. Optical transmission and grain size are found to be maximal for z = 1.8 %. Moreover, band-gap energy is found to increase with aluminum ratio.     

Influence of CO 3 2− and OH− groups on dielectric losses of NaCl crystals

The results of measuring the dielectric losses of NaCl crystals with a different concentration of Na₂CO₃ and NaOH admixtures in the melt are given in the present paper. From a comparison of the curves found for the dielectric losses of the crystals studied it can be seen that the course of tan and the positions of the relaxation maxima, corresponding to the measured specimens with CO ₃ ^2– or OH^– admixtures, hardly differ. From these measurements and from a comparison with the results of other authors it follows that the admixture is probably the same in both groups of crystals.In conclusion the author thanks Dr. A. Bohun for discussions on the results and for his continuous interest in this work.     

Low temperature photoluminescence properties of p- and n-type Al x Ga1−x As withx>0.42

The photoluminescence (PL) spectra of n- and p-type Al _x Ga_1−x As (x>0.42) grown by metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy show typically a broad PL band (BB) centered about 300meV below the near band-gap PL lines. In the MOVPE grown samples the BB is composed out of four lines. The BB intensity increases with the doping level and dominates the spectrum at concentrations > 10¹⁷ cm⁻³. The temperature dependence of the BB intensity shows two distinct maxima at ≈ 19K and ≈ 80K. Hydrogenation of MOVPE grown samples at 170°C reveal an effective passivation of the shallow acceptors and the centers associated with the BB line. On the contrary hydrogenation at temperatures >250°C leads to an increase in the BB intensity which is related with the evaporation of As from the surface and the generation of V_As in the layers at these temperatures. Our results suggest that the BB is related with isoelectronic centers formed when V_As and C_As or Si_As associate to form next nearest neighbor ion pairs. The PL is then due to a recombination of excitons in analogy to the case of (Zn, O) isoelectronic complexes in GaP. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was supported by the DFG under the contract AZ 436 TSE 113/22/0 in the framework of the cooperation between the DFG and the Academy of Sciences of the Czech Republic.     

Oxygen ion conduction in 12CaO·7Al2O3: O2− conduction mechanism and possibility of O− fast conduction

12CaO·7Al₂O₃ (C12A7) with a unique nano-porous structure and free O^2? ions entrapped in sub-nanometer-sized cages is a fast oxygen-ion-conducting material. These free O^2– may be replaced by various oxygen-related species, OH^?, O^2? and O^?, by tuning the atmosphere during the heat treatment. We examined the conduction mechanism for stoichiometric C12A7 (C12A7:O^2?), in which O^2? ions exist as counter anions in sub-nanometer-sized cages, by Raman measurement of C12A7:O^2? annealed in a dry ¹⁸O₂ atmosphere. It was revealed that the primary ion conducting species is an O^2? ion which diffuses via exchange with O^2? in the cage wall. An experimental result on the sample containing O^? ions implied that O^? is more mobile than O^2? in C12A7. Ab initio calculations on the diffusion paths of O^2? and O^? ions in C12A7 supported the above experimental results.     

Tunneling conductance of a Bi2−xPbxSr2Ca2Cu3O10−y-SnO2 junction

Fine structures were observed in the tunneling conductance of a sintered Bi 2223-SnO₂ junction. The structures are weaker than those of a single crystalline Bi2212. They correspond to the Raman spectrum of Bi2223 and approximately to the phonon density of states of Bi2212. The structures must therefore be phonon structures, and phonons may contribute substantially to highT _c superconductivity. Multiphonon structures are scarcely discernible. Hence we propose a new model, in place of the prior multiphonon model, to explain the rapid increase inT _c with the CuO₂ layer number. 2 (21 K)=68±4 meV inT _c=98±5 K. 2 (0)/k _B T _c is 8.1±0.9. The temperature dependence of the gap was also observed and discussed.     

Assessment of role of iron ions on the physical and spectroscopic properties of multi-component Na2O−PbO−Bi2O3−SiO2 glass ceramics

Multi-component glass ceramics composition Na₂O?PbO?Bi₂O₃?SiO₂ doped with different concentrations of Fe₂O₃ as nucleating agent were characterised by XRD, SEM (scanning electron microscope) and DTA (differential thermal analysis) techniques. Optical absorption, EPR, FTIR and Raman studies are also carried out on these glass ceramics. Absorption bands observed at about 457, 489, 678 and 820 nm are the characteristics of Fe³⁺ ions whereas the band observed at about 964 nm is due to Fe²⁺ ions. EPR studies suggested that Fe³⁺ ions entered in the lattice as tetragonally distorted octahedral symmetry or rhombic sites at low concentration of Fe₂O₃, whereas at higher concentration of Fe₂O₃ (beyond 1 mol%), the super exchange type of interactions between multivalency iron ions begin to dominate. FTIR and Raman spectra have revealed the behaviour of various structural units in the glass ceramic matrix. The analysis of these spectroscopic studies indicates that iron ions do exist in Fe³⁺ and Fe²⁺ state.     

A simple model for optimization design of high performance In1−x−y Ga y Al x As strained MQW DFB lasers

It is well known that complex rate equations and the couple wave equation have to be solved by the method of iteration in the simulation of multi-quantum well (MQW) distributed feedback Bragg (DFB) lasers, and a long CPU time is needed. In this paper, from the oscillation condition of lasers, we propose a simple and fast model for optimization of In_1–x–y Ga _y Al _x As strained MQW DFB lasers. The well number and the cavity length of 1.55 m wavelength In_1–x–y Ga _y Al _x As MQW DFB lasers are optimized using the model. As a result, the simple model gives almost the same results as the complex one, but 90% CPU time can be saved. In addition, a low threshold, high maximum operating temperature of 550–560 K, and high relaxation oscillation frequency of over 30 GHz MQW DFB laser is presented.     

Comparative study of aerogels nanostructured catalysts: Ni/ZrO2–SO4 2− and Ni/ZrO2–Al2O3–SO4 2−

Ionics - A series of Ni/ZrO2–SO4 2− and Ni/ZrO2–Al2O3–SO4 2− catalysts were prepared in one step by the sol–gel method and dried in hypercritical conditions of...     

Superconducting amorphous Al−Cu films of high stability

By vapour quenching it is possible to produce amorphous metal films in the Al–Cu system which are superconducting between 1.2 and 2.6 K. These films show a negative temperature coefficient of resistivity and are stable up to 380 K. The analysis of electron diffraction patterns shows that Al_100–xCu_x is characterized by a dense packed atomic distribution with increasing order from 29~x~49. Al₅₁Cu₄₉ exhibits all typical features known from metglasses which are to a first approximation well understood by the Bernal model. From our results over the composition range 29<~x<~72 we conclude that the short range orders of our amorphous films are similar to those of the complex compounds existing in the phase diagram.Dedicated to Prof. Dr. W. Buckel on the occasion of his 60th birthday.