Supercritical angle fluorescence biosensor for the detection of molecular interactions on cellulose-modified glass surfaces

Cellulose films have been proposed as a convenient substrate for producing flat and homogeneous surface coatings. Additionally, amino-labelled cellulose species, like aminopropyltrimethylsilylethercellulose (ATMSC), are excellent support matrices for covalent binding of biomolecules, with low probe density and prevention of non-specific adsorption of unbound analyte molecules. Due to ATMSC films fulfil important requirements as substrate for analyse techniques of surface-tethered proteins and nucleic acids, we consequently report a new preparation for DNA-functionalised surfaces. Single-stranded DNA molecules are covalently coupled to cellulose-coated glass cover slips to interact with complementary free Cy5-labelled oligonucleotides in solution. Hybridisation efficiencies at the new substrate and at standard surface coatings are determined by detection of the surface-generated fluorescence. In order to discriminate against the fluorescence from unbound oligonucleotides the detection volume was restricted to the surface by collecting supercritical angle fluorescence (SAF). Thus, it is demonstrated that cellulose films are utilised to investigate DNA-hybridisation reactions highly sensitive.     

Interfacial roughness in a near-critical binary fluid mixture: X-ray reflectivity and near-specular diffuse scattering

Measurements are presented of the X-ray specular reflectivity and near-specular diffuse scattering of the interface in a near-critical mixture of hexane and perfluorohexane. A lineshape analysis of the scattered intensity at each temperature yields values for the interfacial tension and interfacial width. The temperature variation of the tension and width so-obtained are consistent with current understanding of this interface, which holds that there is, firstly, an intrinsic width over which the fluid density varies smoothly from one coexistence composition to the other, and, secondly, that the interface acquires an additional and larger statistical interfacial width as a result of capillary fluctuations. Received 1 April 1998     

Phase behaviour of <Emphasis Type="Italic">n</Emphasis>-hexane/perfluoro-<Emphasis Type="Italic">n</Emphasis>-hexane binary thin wetting films

We present X-ray reflectivity investigations of the concentration distribution in binary liquid thin films on silicon substrates. The liquid-vapor coexistence of the binary mixture investigated, hexane and perfluorohexane, is far from criticality. Therefore, a sharp interface separates the liquid film from the vapor. The data reveal a separation of the film in layers parallel to the substrate. A phase diagram is constructed as a projection to the (composition difference, temperature) space, covering a temperature range corresponding to the one-phase and the two-phase regime of the bulk liquid. Although the composition data indicate a mixing gap similar to that of the bulk system, there are two major differences: i) only the near-surface phase changes its composition significantly, and ii) a composition gradient in the film exists also at higher temperatures where in the bulk system the one-phase regime exists.Received: 28 April 2004, Published online: 21 September 2004PACS: 61.10.Kw X-ray reflectometry (surfaces, interfaces, films) - 64.75. + g Solubility, segregation, and mixing; phase separation - 68.15. + e Liquid thin films     

Molecular simulation of C60 adsorption onto a TiO2 rutile (1 1 0) surface

A Monte Carlo molecular simulation study is presented on the adsorption and growth of C₆₀ films on the surface of the (1 1 0) face of rutile. Simulations are performed for a temperature of 600 K using atomistic models both for the fullerene molecules and the TiO₂ surface. It is found in this work that C₆₀ is adsorbed preferably in an ordered arrangement along the surface depressions over the exposed undercoordinated Ti cations. At low densities adsorption occurs preferably at alternate rows, with locations in consecutive rows being occupied appreciably only at higher C₆₀ densities. At low densities, the fullerene molecules tend to aggregate into islands in the surface plane. Additional layers of C₆₀ form only as the density increases, and do so before a monolayer is completed in all consecutive rows. Full monolayer capacity obtained at the highest densities is about 0.9 C₆₀ molecules per nm², but this is only achieved by completing the packing of molecules in interstices at a slightly upper level. The fraction of the molecules that lie closest to the surface only amounts to 0.6 molecules per nm².     

Behavior of a wetting phase near a solid boundary: vapor near a weakly attractive surface

Density profiles of a LJ vapor near a weakly attractive surface with long-range fluid wall potential was studied along the pore coexistence curve. There are two localized density maxima near the pore wall: the first one is caused by localization of the molecules in the minimum of the fluid-wall potential, and the second one reflects adsorption of molecules at the first layer at higher densities. In addition, a third, weak density maximum is observed close to the critical temperature due to the competition between the long-range attractive tail of the fluid-wall potential and the effect of missing neighbors. This maximum separates the region of a gradual density depletion toward the surface due to the missing neighbor effect and the adsorption region further from the surface, where the density gradually increases toward the surface due to the attractive fluid-wall potential. When approaching the bulk critical temperature, this maximum moves away from the surface due to the divergence of the bulk correlation length. Applicability of various equations to describe the vapor density profiles is examined. Excess adsorption of vapor at low temperatures turns into excess depletion at higher temperatures. The crossover temperature increases with increasing pore size and strengthening fluid-wall interaction. The problems of the theory of the surface critical behavior of Ising models in a case of a non vanishing surface field and its mapping on a fluid is discussed.     

Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

We investigated the influence of excimer-laser annealing (ELA) on the electrical, chemical, and structural properties of indium–tin oxide (ITO) films prepared by a solution process. The ITO film was prepared by the sol-gel method and annealed by excimer-laser pulses with an energy density up to 240?mJ/cm². Hall measurements showed that the ELA substantially enhanced the electrical properties of the ITO films, including their resistivity, carrier density, and mobility, as increasing the laser energy density. In-depth x-ray photoelectron spectroscopy analysis of the chemical states in the film surface showed that the ELA reduced carbon species and promoted both an oxidation and crystallization. These changes were consistent with results of x-ray diffraction and transmission electron microscopy measurements, where expansions in the microcrystal growth were observed for higher laser energy density. We comprehensively understand that the chemical rearrangement and concomitant crystallization are the main factors for achieving the electrical properties during the ELA. These results suggest the potential of the ELA-treated sol-gel films for providing high-quality ITO films at low temperatures toward the flexible device applications.     

Electric properties of chemically deposited lithium doped cadmium sulphide films

Electrical properties of chemically deposited CdS and lithium doped CdS films have been investigated by using techniques of Photo-thermoelectric and Photo-Hall effects. Dark electron densities are independent of temperature between 100 and 330°K because of shallow donors and quasi-intrinsic behaviour is apparent above 330°K. Electron density and mobility in these films have been measured as a function of temperature under strong photoexcitation. The electron mobility is found to be thermally activated with energies 0.2 and 0.22 eV for CdS:Li and CdS films respectively. The Hall mobility and electron density in these films have also been measured as a function of temperature under strong photoexcitation and found that both the free carrier density and mobility are reduced by the adsorption of oxygen, former by larger factor than the latter. The resulting very high electron density and very low electron mobility in the temperature region studied also indicate that most of the photoconductivity in chemically deposited films is caused by an increase in electron density due to photoexcitation.     

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

To grow epitaxial Si films with atomic- and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (>1000 °C) has been generally employed. To reduce the growth temperature below 600?°C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H(2) AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.     

Surface morphology and crystalline structure of high-stable polycrystalline transparent conductive zinc oxide films

Surface morphology and crystalline structure of high-stable zinc oxide films were evaluated by atomic force microscopy, scanning electron microscopy and X-ray diffraction (XRD) measurements. AFM measurement revealed that the higher stable samples have smaller roughness (average roughness and root mean square) parameters than the lower stable samples. Furthermore, in-plane XRD measurement showed that the crystallite size of high stable samples is smaller than that of the low stable samples. These results indicate that the larger surface area and lower film density deteriorates the stability of zinc oxide films through the adsorption and reaction of water or oxygen molecules. They also suggest that we can prepare the high stable zinc oxide transparent electrode films by controlling the surface morphology.     

Nanoscale imaging of surface piezoresponse on GaN epitaxial layers

Surfaces of GaN films were investigated by atomic force microscopy (AFM) with implemented piezoelectric force microscopy technique. A model of PFM based on the surface depletion region in GaN films is discussed. The local piezoelectric effect of the low frequency regime was found to be in phase with the applied voltage on large domains, corresponding to a Ga-face of the GaN layer. Low piezoresponse is obtained within the inter-domain regions. The use of frequencies near a resonance frequency enhances very much the resolution of piezo-imaging, but only for very low scanning speed the piezo-imaging can follow the local piezoelectric effect. An inversion of the PFM image contrast is obtained for frequencies higher than the resonance frequencies. The effect of a chemical surface treatment on the topography and the piezoresponse of the GaN films was also investigated. Textured surfaces with very small domains were observed after the chemical treatment. For this kind of surfaces, piezo-induced torsion rather than bending of the AFM cantilever dominates the contrast of the PFM images. A small memory effect was observed, and explained by surface charging and confinement of the piezoelectric effect within the carrier depletion region at the GaN surface.     

Core level photoemission evidence of frustrated surface molecules: a germ of disorder at the (111) surface of C60 before the order-disorder surface phase transition

Using high resolution core level photoemission, we investigated the disordering transition of the fullerene molecules at the (111) surface of C (60) films. The experimental evidence of a two-step mechanism for the rotational disordering of surface fullerene molecules is provided. The data are consistent with a recent model in which the rotational degrees of freedom of one molecule, out of the four inequivalent C (60) molecules of the low temperature (2x2) surface unit cell, melt about 100 K before the bulk phase transition.     

Ab initio study of water adsorption on TiO2-terminated (100) surface of SrTiO3 with and without Cr doping

Water molecule adsorption on TiO₂-terminated (100) surface of SrTiO₃ with and without Cr doping is investigated by first principle calculation based on density functional theory. The band gap is shrunk compared with that of bulk due to the existence of defect states on the surface and 3d states of dopants. As a result the absorption energy edge is reduced and locates in the visible region. When adsorbed on the surface, energy levels of water molecules as a whole are lowered with respect to the Fermi energy, but the higher levels are split and electrons are transferred from low levels to high levels due to the decrease of the density of states in low energy region. Weak bonding is formed between water hydrogen atoms and surface oxygen atoms. This bonding causes the electron transferring from substrate to molecule and the occupation of the corresponding states.     

Gas—liquid interfaces of room temperature ionic liquids

The structure of the gas-liquid surface of dimethylimidazolium chloride has been studied using atomistic simulation. We find that there is a region of enhanced density immediately below the interface in which the cations are oriented with their planes perpendicular to the surface and their dipoles in the surface plane. There is negligible segregation of cations and anions. The temperature dependence of the surface tension is predicted to be anomalously low or be reversed in sign. The vapour-liquid interfaces between mixtures of water and dimethylimidazolium chloride show similar regions of enhanced density and preferential orientation of the cations. Water molecules also show preferential orientation in the interface region and are preferentially adsorbed on the vapour side of the interface. The surface tension decreases with increase in the mole fraction of water.     

Luminescence of molecules adsorbed on surfaces of wide gap materials

We report on the photoluminescence spectra of thin films of chain-like π-conjugated molecules on well-defined surfaces of wide gap inorganic materials. The aim is to study the energy transfer processes across the organic/substrate interface which limit the luminescence of molecules in close contact to substrate surfaces. We discuss quaterthiophene (4 T) adsorbed on the c(2×2)-ZnSe(0 0 1) surface and tetracene (Tc) on the surface of a thin epitaxial Al₂O₃ film on Ni₃Al(1 1 1). For thin films vapor-deposited at low substrate temperatures, we observe no luminescence signal for both systems, which indicates the presence of fast luminescence quenching processes at the organic/inorganic interface. After annealing, luminescence spectra corresponding to those of the bulk crystals are obtained. This can be explained by the formation of 3D-crystallites, which effectively separate most molecules from the organic/inorganic interface.     

Effect of the plasma parameters on the properties of titanium nitride thin films grown by laser ablation

Titanium nitride thin films were deposited at low temperatures (less than 250 °C) using the laser ablation technique. The effect of both the laser beam energy density and the gas pressure on the plasma parameters was studied. The film structure, mechanical properties and surface morphology were investigated as a function of the plasma parameters. The results showed a strong dependence of these properties on the ion kinetic energy and plasma density. The gas pressure was seen to control the preferred orientation of the films in the (200) and (111) directions. At 1×10^-2 Torr only the (200) direction was observed. In addition, the crystal size for all the films was found to depend on the plasma parameters; generally, an increase of ion energy and plasma density resulted in a decrease of the crystal size. TiN films with hardness as high as 24.0 GPa, which is suitable for many mechanical applications, were obtained. The hardness was strongly affected by the ion energy, increasing as the ion energy increased. These results show that the properties of the deposited material are controlled in part by the degree of ion bombardment and the plasma density. PACS 81.15.Fg; 81.05.Je; 68.55.Jk; 52.70.Ds     

向列相液晶沿面到垂面排列转变的分子场理论

以摩擦基板间的液晶薄层为研究对象,用分子场理论研究了向列相液晶分子排列转变行为.分子质心固定在简单立方晶格的格点上.液晶由极性分子构成,与基板相接触的一层分子同时受到色散和极性两类表面作用.通过自洽的数值计算,获得3种相图,清楚地展示了摩擦基板间向列相出现的从高温沿面到低温垂面排列的转变;获得实现这类转变所需要的两类表面作用的参数范围.结果表明:基板的摩擦会改变基板表面色散作用,但不会影响基板表面极性作用;表面极性相互作用能引起基板间向列相液晶发生沿面到垂面排列转变.     

Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the near surface and interior region on increasing the silane-gas temperature. In addition, the increase in the gas temperature leads to an improved ordering of amorphous network on the short and intermediate scales towards the surface of a-Si:H thin films. Post-annealing at 250 °C for 3 h mainly leads to a short and intermediate range improvement in the interior region of the films. Our present results suggest that a-Si:H thin films with better quality could be deposited at higher silane-gas temperature. PACS 63.50.+x; 61.43.-j; 75.40.-s     

Decompositional incommensurate growth of ferrocene molecules on a Au(111) surface

Deviating from the common growth mode of molecular films of organic molecules where the adsorbates remain intact, we observe an essentially different growth behavior for metallocenes with a low temperature scanning tunneling microscope. Ferrocene molecules adsorb dissociatively and form a two layer structure. The top layer unit cell is composed of two tilted cyclopentadienyl (cp) rings, while the first layer consists of ferrocene molecules and cp-Fe complexes. Surprisingly a fourfold symmetry is observed for the top layer while the first layer displays threefold symmetry elements. It is this symmetry mismatch which induces an incommensurability between these layers in all except one surface direction. The top layer is weakly bonded and has an antiferromagnetic ground state as calculated by local spin density functional approximation.     

Thermodynamic properties of Langmuir layers created of monoimide perylenetetracarboxylic acid derivatives

Langmuir films formed of some fluorescent dyes, 3,4-bis-pentyl ester of 9,10-N-(n-pentylimide)-perylenetetracarboxylic acid, as well as their mixtures with arachidic acid, were studied. Surface pressure versus mean molecular area isotherms for Langmuir films were reordered and the alignment of molecules at the air–water interface was estimated. The isotherms show that the dye molecules do not lie flat onto the water surface but are tilted with respect to the normal to the interface. The surface pressure–area isotherms of Langmuir films formed from the dye/arachidic acid mixture provide evidence for phase separation of the components within almost the entire range of mole fractions. A repulsive interaction between molecules was observed in all two components of Langmuir films.     

纳米通道内气体剪切流动的分子动力学模拟

采用分子动力学模拟方法研究了表面力场对纳米通道内气体剪切流动的影响规律.结果显示通道内的气体流动分为两个区域:受壁面力场影响的近壁区域和不受壁面力场影响的主流区域.近壁区域内,气体流动特性和气体动力学理论预测差别很大,密度和速度急剧增大并出现峰值,正应力变化剧烈且各向异性,剪切应力在距壁面一个分子直径处出现突变.主流区域的气体流动特性与气体动力学理论预测相符合,该区域内的密度、正应力与剪切应力均为恒定值,速度分布亦符合应力-应变的线性响应关系.不同通道高度及密度下,近壁区域的归一化密度、速度及应力分布一致,表明近壁区域的气体流动特性仅由壁面力场所决定.随着壁面对气体分子势能作用的增强,气体分子在近壁区域的密度和速度随之增大,直至形成吸附层,导致速度滑移消失.通过剪切应力与切向动量适应系数(TMAC)的关系,得到不同壁面势能作用下的TMAC值,结果表明壁面对气体分子的势能作用越强,气体分子越容易在壁面发生漫反射.