Globular Mesogens

Abstract

Polyaniline, (4oSN) is found to exhibit a low energy absorption edge beginning near 1800 cm^?1 (ca: 0.22 eV), and a strong anion-induced absorption from about 800 to 1200 cm^?1. Electrical conductivity has an activation energy of 0.05 (15%) eV consistent with an anion-induced energy gap of about 0.1 eV.     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

Electrical conductivity (σ) and Hall coefficient (R_H) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm² V⁻¹ s⁻¹ and could described by the law μ = aTⁿ (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT^–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10⁷ cm⁻³.     

Conductivity and Optical Properties of a Polyiodine Canal Complex (Benzophenone)9(KI)2I7, CHCl3

Abstract

(Benzophenone)₉(KI)₂I₇, CHCl₃ single crystals have a golden metallic reflection on the surfaces parallel to the polyiodine chain axis. The compound is a member of a large class of channel-like inclusion compounds in which isolated iodine atom chains are the only possible conducting strands in an otherwise insulating matrix. The (contactless) microwave conductivity is ～ 10 Ω^?1 cm^?1 at room temperature with an activation energy of ～0.03 eV down to 70°K, while the dc conductivity is ～10^?-⁶. Conductivity is strongly frequency dependent and contact problems are severe.     

Electrical conductivity and thermoelectric power of liquid AgSb Te2

The electrical conductivity and thermoelectric power of liquid AgSb Te₂ have been investigated as a function of temperature. Experimental data are analyzed in terms of a recent model proposed by Mott. The activation energy for electrical conductivity and thermoelectric power is found to be approximately 0.50 eV with a large temperature coefficient γ ～ 7 × 10^?4 eV/deg K. The gradual transition from a semiconducting to a metallic behaviour has been observed at high temperature.     

Synthesis and Characterization of Polyphenothiazene Iodine Complexes

Abstract

N-methyl 3,6 dibromophenothiazene has been polymerized by using a nickel complex-assisted Grignard coupling. Vapor phase iodine doping of the organometallic polymerized material led to a conductivity increase of 10^?11 ohm^?1 cm^?1 to 10^?5 ohm cm^?l at room temperature. The complex thus formed exhibited a semiconductor behavior with a thermal activation energy of 0.1 eV and a strong electronic IR absorbance from 4000–400 cm^?1. However, the complexed polymer could be dissolved in liquid I₂ and cast into films with air stable, room temperature conductivities as high as 1 ohm^?l cm^?l. The mechanisms that could give rise to these differences in behavior will be discussed.     

On the conduction mechanism and thermoelectric phenomena in In6S7 layer crystals

In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In₆S₇, grown by a new crystal growth technique, were done. The crystal was found to be of n-type conductivity. The low conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different scattering mechanisms for electrons and holes in the same temperature range. Also we have made thermoelectric power measurements to support this assumption. An energy gap of 0.64 eV was found.     

Structural and Electrical Characterization of Ag3Ga5Te9 and Ag3In5Se9 Crystals

X-ray powder diffraction studies revealed that Ag₃Ga₅Te₉ and Ag₃In₅Se₉ crystallize in orthorhombic and tetragonal systems, respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65—480 K. Ag₃Ga₅Te₉ exhibits p-type conduction with a room temperature conductivity of 4.3 × 10^—4 (Ω · cm)^—1 and mobility less than 1 cm²/V · s. Ag₃In₅Se₉ was identified to be n-type with room temperature conductivity 7.2 × 10^—5 (Ω · cm)^—1 and mobility 20 cm²/V · s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.     

Absorption and electrical conductivity of CaMoO4 crystals

The electrical conductivity σ of CaMoO₄ crystals was investigated between room temperature and 850°C. The mobility v_v and the diffusion coefficient D_v of the O⁻ ion vacancies have been derived from σ: v_vT = 3300 exp (−1.52 eV/kT) cm² K/Vs, D_v = (0.1…1) × exp (−1.52 eV/kT) cm²/s. An absorption occuring in crystals which are reduced or X-irradiated at low temperatures is dichroitic and caused by Mo⁵⁺ ions. For measurement in c direction the oscillator strength of the 680 nm absorption band is found to be about 0.1.     

Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals

The conductivity, mobility, photoconductivity and photo response measurements in GaS_0.75Se_0.25 mixed crystals were carried out in the temperature range of 150‐450 K. The room temperature conductivity, mobility and electron concentration values were 10^‐9 (Ω‐cm)^‐1, 48 cm²V^‐1s^‐1 and ∼10⁹ cm^‐3, respectively. Two donor levels were obtained from temperature‐dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor‐single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7 × 10¹⁴ and 5.3 × 10¹³ cm^‐3, respectively. The mobility‐temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo‐response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent‐light intensity dependence in these crystals obeys the power law, I_ph ∝ ϕ^γ with γ between 1.7 and 2.0 for various applied fields and temperatures. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical conductivity of antimony oxofluoride Sb3O2F5

The conductivity of antimony oxofluoride Sb₃O₂F₅ is investigated by the complex impedance method in the temperature range of 400–505 K. Sb₃O₂F₅ powder has been prepared by solid-phase synthesis in nickel ampoules at 473 K for 5 h in an argon atmosphere. The Sb₃O₂F₅ conductivity has an ionic character. The ionic conductivity is found to be 5 × 10^?5 S/cm (at 505 K), with an ion-carrier migration energy of 0.82 eV.     

Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2

The electrical conductivity and the Hall effect for TlGaTe₂ crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.     

Crystal Data,Electrical Resisitivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals

X-ray powder diffraction data were obtained for Cu₃In₅Se₉ and Cu₃Te₉, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu₃In₅Se₉, was identified to be n-type with a room temperature resistivity of 3 × 10³ Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu₃In₅Te₉ exhibits p-type conduction with a room temperature resistivity of 8.5 × 10⁻³ Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.     

Substitutional doping of chemically vapor-deposited amorphous silicon

Dc conductivity, absorption coefficient, photoconductivity, and magnetoresistance of phosphorus-doped amorphous Si films prepared by chemical vapor deposition (CVD) have been measured as a function of doping ratio. These results indicate that phosphorus doping reduces localized states in the mobility gap, narrows the tailing width below the extended states, and that phosphorus donors form the impurity band at 0.15 eV below E_c at a doping ratio of about 1×10^-2. It is also found that electronic properties of CVD amorphous Si can be controlled in a wide range by substitutional doping of phosphorus atoms.     

Solid-state NMR and XANES studies of lithium and silver silicate gels synthesized by the sol-gel route

The objective of this study is to understand the effect of low temperature sol-gel synthesis on the microstructural properties of lithium [xLi₂O-(1−x)SiO₂; x=0.1-0.8 in steps of 0.1] and silver [xAg₂O-(1−x)SiO₂; x=0.1-0.8 in steps of 0.1] silicate xerogels via solid state nuclear magnetic resonance (NMR) and X-ray absorption near edge structure (XANES) techniques. The Li silicate xerogels were analyzed with solid-state ⁷Li and ²⁹Si NMR and the Ag silicate xerogels were studied with Ag XANES. At high Li loading, ⁷Li NMR shows quadrupolar satellite transitions attributed to LiNO₃, a phase also found with X-ray diffraction (XRD). At low Li loading, both NMR and XRD results show an amorphous xerogel. The silicate network is monitored with ²⁹Si NMR and shows evidence of Li incorporation. For the Ag silicate xerogels, Ag-L-III XANES spectral studies show a local environment similar to AgNO₃ for low Ag loading levels, and an increased Ag oxidation for higher Ag loading levels. Si K edge spectra show only an amorphous phase, with no evidence of a crystalline quartz phase. The electrical conductivity of the lithium silicates was estimated from impedance data and the highest conductivity is exhibited by the 0.3Li₂O-0.7SiO₂ composition xerogel. The conductivity dependence on loading level strongly suggests that the observed conductivity is due to Li⁺ mobility. However, further experimental studies are needed to rule out the possibility that the conductivity is, at least in part, due to H⁺ mobility. Variation in conductivity is explained qualitatively using existing theoretical models.     

Magnetotransport and Nonlinear Effects In (TMTSF)2PF6

We have measured the magnetoresistance, Hall effect and the nonlinear conductivity characteristics in pure and radiation damaged (TMTSF>₂PF₆. We find that the material below the metal-insulator transition temperature is best described as quasi-two-dimensional with a very high mobility (10⁵ cm²/volt-sec). The nonlinear conductivity is suppressed by the application of a magnetic field and by radiation damage. The magnetoresistance, metal-insulator transition temperature and the superconducting transition temperature are also reduced by radiation damage of order 1000 ppm for the latter and 100 ppm for the former.     

Electrophysical properties of LiYbF<Subscript>4</Subscript> crystals

Nominally pure LiYbF₄ crystals have been grown by vertically directed crystallization in a fluorinating atmosphere. Their electric conductivity was studied by measuring the complex impedance in the temperature range of 479–825 K. The ionic conductivity is 1.4 × 10⁻⁶ S/cm at 573 K. The temperature dependence of the electric conductivity has two ranges, with activation energies of 0.73 ± 0.02 eV (409–580 K) and 0.42 ± 0.02 eV (580–825 K). Our results are discussed using the model of hopping conductivity for ionic crystals.     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method

ABSTRACT

The effects of surface preparation and illumination on electric parameters of Au/GaN/GaAs Schottky diode were investigated. The thin GaN film is realized by nitridation of GaAs substrates with different thicknesses of GaN layers (0.7 – 2.2 nm). In order to study the electrical characteristics under illumination, we use an He-Ne laser of 632 nm wavelength. The I(V) current- voltage, the surface photovltage SPV measurement were plotted and analysed taking into consideration the influence of charge exchange between a continuum of the surface states and the semiconductor. The barrier height Ф_Bn, the serial resistance R_s and the ideality factor n are respectively equal to 0.66 eV, 1980 Ω, 2.75 under dark and to 0.65 eV, 1160 Ω, 2.74 under illumination for simple 1 (GaN theckness of 0.7 nm). The interface states density N_ss in the gap and the excess of concentration δn are determined by fitting the experimental curves of the surface photovltage SPV with the theoretical ones and are equal to 4.5×10¹² eV^?1 cm^?2, 5×10⁷ cm^?3, respectively, for sample 1 and 3.5×10¹² eV^?1 cm^?2, 7×10⁸ cm^?3 for sample 2 (GaN theckness of 2 nm). The results confirm that the surface photovoltage is an efficient method for optical and electrical characterizations.