ac conductivity in a-Ge–Se–Bi glasses

In the present paper the effect of Bi impurity (low ∼4 at.% and high ∼10 at.%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glassy alloy is studied and the experimentally deduced values are fitted with theoretically deduced values by using correlated barrier hopping model (CBH). Frequency dependent ac conductance of the samples over a frequency range of 100–50 kHz has been taken in the temperature range (268–360 K). At frequency 2 kHz and temperature 298 K, the value of ac conductivity (σ_ac) decreases at low concentration of Bi (4 at.%). However, the value of σ_ac increases at higher concentration of Bi (10 at.%). The ac conductivity is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes at low and high concentration of Bi impurity.     

Effect of LiCF3SO3 on L-Chitosan/PMMA Blend Polymer Electrolytes

This paper focuses on the effect of lithium triflate (LiCF₃SO₃) on the structural and conduction properties of lauroyl (L)-chitosan/poly(metylmethacryalate) (PMMA)-based polymer electrolytes. Films of L-chitosan/PMMA blends and its complexes were prepared using a solution-casting technique. The ionic conductivity of the system was measured over a wide range of frequency between 50 Hz-1 MHz. Impedance plot for the samples demonstrates two well-defined regions. The disappearance of the high frequency semicircular region led to a conclusion that the current carriers are ions. Sample with 30 wt% of LiCF₃SO₃ showed the highest conductivity of 7.59 ± 3.64 × 10^?4 Scm^?1 at room temperature. This is consistent with the results obtained from infrared spectroscopy.     

Non-linear dielectric properties of metal-amorphous-tantalum pentoxide-metal structures

High dielectric constant (high K) materials are becoming important due to their potential applications in embedded dynamic random access memory and radio frequency capacitors. Among high K materials that can replace silicon dioxide for these applications, tantalum pentoxide (Ta₂O₅) is the candidate of choice since it is already available in the semiconductor industry. One of the advantages of Ta₂O₅ is that it can be deposited at low temperature (<500 °C). This makes it suitable for the fabrication of metal-oxide-metal structures that require low thermal budget. The use of Ta₂O₅ for silicon device applications requires good electrical performances in terms of leakage current and capacitance dispersion. The roughness of the bottom electrode, as determined by atomic force microscopy measurements, is found to impact the leakage current. Capacitance voltage measurements exhibit a non-linear variation with respect to the applied bias. We suggest a model that well explains the observed capacitance variations. This model is based on the relaxation of the free carriers and the Kerr effect     

Decrease in dielectric loss of CaCu3Ti4O12 by the addition of TeO2

CaCu₃Ti₄O₁₂ (CCTO) has challenged for the last few years the scientific community due to its large dielectric constant, which is almost temperature and frequency independent, from 100 K to 400 K and from 1 kHz to 1 MHz, respectively. This makes the material desirable for many electronic applications. However, the dissipation factor is very large, with tan δ values, at room temperature and 1 kHz, higher than 0.1.In our work we report how the addition of TeO₂ lowers the dielectric loss and, although there is a decrease of dielectric constant of doped samples relatively to the undoped one, high dielectric constant values are still being reached. The sample of doped CCTO with 1.5% of TeO₂ by weight, presents, at room temperature and 60 kHz, a large dielectric constant, over 3000, and a dissipation factor around 0.09, which represents a decrease on tan δ over 30% relatively to the CCTO undoped sample. Two relaxation processes were identified for all the samples, one at MHz region and the other one at low frequency region (< 1 kHz). DC bias voltage was applied up to 40 V and a strong dc bias influence on the low frequency region was observed both at dielectric and impedance responses of the undoped sample, which was much weaker than the dc bias effects on the 4% Te doped sample.Dielectric measurements will be discussed and correlated with the samples' microstructure, supported on internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models.     

TSDC study of structural relaxation on polyethylene terephthalate

The influence of physical aging processes on the electrical and thermal properties of amorphous polyethylene terephthalate was investigated by means of the thermally stimulated depolarization current (TSDC), differential scanning calorimetry (DSC) and low frequency dielectric methods. A noticeable decrease in polarization and loss factor corresponding to the main α relaxation was observed with increasing aging times, especially for aging temperatures ranging from 10 to 20 °C below T_g. This behavior is compatible with the free-volume concept, and can be explained by a gradual decrease in segmental mobility following a shift of the relaxation time spectrum of molecular motions to longer time scales. The whole experimental evidence suggests that proper consideration should be given to thermal history and aging effects of polyethylene terephthalate. The thermally stimulated depolarization current was chosen due to its low equivalent frequency, useful to study systems exhibiting multiple relaxations.     

Hopping conduction in amorphous Nb2O5 thin films

The low field conduction mechanism in amorphous Nb₂O₅ doped with Nb is investigated by measurements of the ac conductivity as a function of frequency (3 Hz?6 × 10⁶ Hz), dc conductivity as a function of temperature (100–400 K), capacitance as a function of frequency (3 Hz?6 × 10⁶ Hz) and conductance G as a function of voltage at 10³ Hz. Loss tangent and quality factor data are also given because of their technical and scientific relevance. Evidence for hopping conduction at low applied fields is presented by the following results: (1) a monotonic increase in ac conductivity σ(ω)αωⁿ where 0.5 < n < 1.0 in the range 3 Hz?6 × 10⁶ Hz; (2) a linear dependence of current on voltage at low fields; and (3) low activation energy for dc conduction with a transition at 210 K to a still lower activation energy; and (4) a decrease in polarizability with frequency. At high fields, E > 10⁵ V/cm, dc conductivity is dominated by the field emission mechanism of the Poole-Frenkel or Poole type.     

Relaxation of polaronic charge carriers in lithium manganese spinels

Lithium manganese spinels Li_1+xMn_2−xO₄, 0 ⩽ x ⩽ 0.33, were prepared by wet chemistry technique followed by heat-treatment at 750 °C or 800 °C. Differential scanning calorimetry was used to reveal phase transitions. Electrical properties were studied by impedance spectroscopy. LiMn₂O₄ exhibited phase transition below room temperature. The transition, seen as an exothermic event in DSC and a steep decrease of conductivity upon cooling, was sharp in sample sintered at 800 °C and broadened over a range of temperature in sample sintered at 750 °C. In the low temperature phase of LiMn₂O₄, two relaxations of similar strength were observed in the frequency dependent permittivity. The low frequency process was identified as relaxation of charge carriers since the relaxation frequency followed the same temperature dependence as the dc conductivity. The high frequency process exhibited milder temperature dependence and was attributed to dipolar relaxation in the charge-ordered structure. The dipolar relaxation was barely visible in Li substituted samples, x ⩾ 0.05, which did not undergo structural phases transition. Measurements extended to liquid nitrogen temperature showed gradual lowering of the activation energy of conductivity and relaxation frequencies, behavior typical for phonon-assisted hopping of small polarons.     

The morphology and electromagnetic properties of MnO2 obtained in 8 T high magnetic field

MnO₂ powder was synthesized in a high magnetic field (8 T) via a simple route, and the formation mechanism for the grain shape was discussed. The synthesized samples were characterized by XRD, SEM, TEM, and vector network analysis. The morphology of synthesized MnO₂ was sea urchin-like ball chain with a low density center, just like “hollow-like”. Throughout the whole frequency range, the dielectric constant and the loss tangent clearly decreased in 8 T high magnetic field. Moreover, the magnetic permeability and the loss tangent increased slightly in the frequency range 2–13 GHz. Furthermore, the theoretically calculated values of reflection loss showed that when the magnetic field strength 8 T was adopted, the absorption peak became smoother and shifted to a higher frequency.     

The role of coordination and valance states of tungsten ions on some physical properties of Li2O–Al2O3–ZrO2–SiO2 glass system

A series of Li₂O–Al₂O₃–ZrO₂–SiO₂ glasses doped with different concentrations of WO₃ (0 to 5.0 mol.%) have been synthesized. Differential thermal analysis of the samples indicated increasing glass forming ability with the increasing concentration of WO₃ in the glass matrix. A variety of spectroscopic (optical absorption, IR, Raman and ESR) and dielectric properties (over a range of frequency and temperature) of these glasses have been investigated. The optical absorption and ESR spectral studies have pointed out that a part of tungsten ions do exist in W⁵⁺ state in addition to W⁶⁺ state especially in the samples containing low concentration of WO₃. The IR and Raman spectral studies have suggested that there is a decreasing degree of disorder in the glass network with increase in the concentration of WO₃. The values of dielectric parameters viz., dielectric constant, loss and ac conductivity at any frequency and temperature are observed to decrease as the concentration of WO₃ is increased. Such changes have been attributed to decrease of redox ratio or decreasing proportions of W⁵⁺ ions that act as modifiers in the glass network. The quantitative analysis of the results of ac conductivity and dielectric properties have indicated an increase in the insulating character of the glasses with the concentration of WO₃; this is attributed to the presence of tungsten ions largely in W⁶⁺ ions that participate in the glass network forming with WO₄ structural units.     

Ga and In incorporation rates in Ga1−xInxAs growth by chemical beam epitaxy

GaAs, InAs and Ga_1?xIn_xAs layers were grown by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As, respectively. The growth rate during the homoepitaxial growth of GaAs and InAs, deduced from the frequency of reflection high-energy electron diffraction intensity oscillations, was used to calibrate the incorporation rates for the III elements. The In content of the Ga_1?xIn_xAs layers was measured by Rutherford backscattering spectrometry and compared with the value predicted from the above calibration data; while the measured In mole fraction is close to the predicted value for the samples grown for low In to Ga flux ratios (x<0.2), the In incorporation is enhanced for larger values of this ratio. The results obtained on layers grown at different substrate temperatures show that In mole fraction is almost constant at growth temperatures in the range 400–500 °C, but a strong dependence on the substrate temperature has been found outside this range. The above results, not observed for samples grown by solid source molecular beam epitaxy, indicate that some interaction between Ga and In precursors at the sample surface could take place during the growth by CBE.     

DC conduvtivity of V2O5TeO2 glasses

The dc conductivity of semiconducting vanadium tellurite glasses of compositions in the range 50 to 80 mol% V₂O₅ has been measured in the temperature region 77 to 400 K. Measurements have been made on annealed samples at different annealing temperatures. Annealing the samples at temperature of about 250°C causes the appearance of a complex crystalline phase resulting in an increase of conductivity. Results are reported for amorphous samples of different compositions. The conductivity of tellurite glasses is slightly higher than the corresponding composition of phosphate glasses, but the general trend of the increase of conductivity and decrease of high temperature activation energy with increasing V₂O₅ content is similar in the two systems. The data have been analysed in the light of existing models of polaronic hopping conduction. A definite conclusion about the mechanics of conduction (adiabatic or nonadiabatic) is difficult in the absence of a precise knowledge of the characteristic phonon frequency v₀. Adiabatic hopping is indicated for v₀～10¹¹ Hz, however this value leads to unreasonably low value for the Debye temperature θ_D, and higher values for v₀～10¹³ hz satifiies the conditions for nonadiabatic hopping which appears to be the likely mechanism of conduction in V₂O₅TeO₂ glasses. The low temperature data (< 100 K) can be fitted to Mott's variable range hopping, which when combined with ac conductivity data gives reasonable values of α, but a high value for the disorder energy.     

Ac conductivity and dielectric relaxation in ionically conducting soda-lime-silicate glasses

The frequency dependent conductivity and dielectric relaxation of alkali ions in some soda-lime-silicate (Na₂O-CaO-SiO₂) glasses are investigated over a frequency range from 50 Hz to 1 MHz and in a temperature range from room temperature to 603 K by using alternating current impedance spectroscopy. The conductivity isotherms show a transition from frequency independent dc region to dispersive region where the conductivity continuously increases with increasing frequency. The electric modulus representation has been used to provide comparative analysis of the ion transport properties in these glasses. The scaling behavior of imaginary part of electric modulus indicates that all dynamical processes occurring at different frequencies give the same activation energy.     

Electrical and magnetotransport properties of La0.7Sr0.3MnO3/TiO2 composites

The composite samples with nominal compositions of (1‐x) La_0.7Sr_0.3MnO₃ + x TiO₂ (x = 0, 0.05, 0.10, 0.15 and 0.20) were synthesized via solid state reaction process. The X‐ray diffraction and scanning electronic microscopy observations reveal no reaction between La_0.7Sr_0.3MnO₃ (LSMO) and TiO₂ phases. Temperature dependence resistivity measurements show that TiO₂ phase shifts the metal‐insulator transition temperature (T_p) towards lower temperature and increases the resistivity. Moreover, the magnetization of the composite samples decreases with TiO₂ content. An enhancement in magnetoresistance is observed in the composite samples with x = 0.05 and x = 0.10 at low magnetic fields, which is encouraging for potential application of magnetoresistive materials at low field. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On the synthesis and characterization of La doped MgB2 superconductor

We report the synthesis of La doped MgB₂ superconductors with nominal compositions Mg_1‐xLa_xB₂ (with x = 0.01, 0.03, 0.05, 0.07) by solid state reaction at ambient pressure. A special encapsulation technique has been used by us to prepare high quality superconducting MgB₂ samples. The bulk polycrystalline samples possess superconducting transition temperature T_c(R=0) ranging between 36‐39 K. It has been found that transport critical current density J_c of the samples change significantly with the doping level of La. A high transport (J_c) value ∼1.9 x 10³ A/cm² at 15 K has been achieved for Mg_0.97La_0.03B₂ sample. The XRD and TEM investigations indicate that the samples prepared by encapsulation method are devoid of MgO, which is generally found when synthesis of MgB₂ is done through sintering of Mg and B powders. The detailed microstructural investigations of Mg_0.97La_0.03B₂ specimens by transmission electron microscopy (TEM) reveal the presence of partial dislocation network, moiré fringes and superlattice structure in the as synthesized samples. The higher transport critical current density observed in Mg_0.97La_0.03B₂ superconductor has been attributed to the partial dislocations which are capable of providing pinning centres. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Conductivity and dielectric properties of polymer electrolytes PEO:LiN(CF3SO2)2 near glass transition

Results of measurements of PEO:LiN(CF₃SO₂)₂ polymer electrolytes of composition between 12:1 and 1.5:1 EO:Li, performed by impedance spectroscopy, impedance spectroscopy simultaneous with microscope observation, differential scanning calorimetry and X-ray diffraction were analyzed focusing on electrical properties of semicrystalline and rapidly cooled amorphous samples. In the loss spectra measured at low temperature, the occurrence of two dielectric relaxations was evidenced: local (β) and segmental (α). For each of the investigated electrolytes, the temperature dependence of the ionic conductivity and the frequency of α relaxation could be described by the VTF function with the same value of parameter T₀, which indicated close coupling of both phenomena. The local (β) relaxation exhibited an Arrhenius type temperature dependence. With increasing amount of salt, two effects were observed for amorphous samples: an increase of the glass transition temperature T_g affecting the α relaxation and changes of structure of PEO:LiN(CF₃SO₂)₂ complexes reflected in shift of the β relaxation frequency. Crystallization caused decrease of both the ionic conductivity and the strength of dielectric relaxations. The presence of crystalline phase was also reflected in a shift of the T_g of amorphous phase remaining in the system with respect to the T_g of amorphous electrolyte obtained by rapid cooling.     

Dielectric properties of vacuum deposited Samarium Oxide sandwich structures

Samarium oxide films were prepared by vacuum thermal evaporation using tantalum boats. The effect of aging, frequency and annealing on capacitance and tan δ were studied for Al Sm₂O₃ Al capacitor structures. The variation in capacitance with frequency at low frequency region is quite considerable. The existence of oxygen vacancies were confirmed from the thermoluminescence studies of these oxide films. The results were discussed on the basis of oxygen vacancies existing in these films.     

Magnetic and Dielectric Properties in Multiferroic Y-type Hexaferrite

Polycrystalline samples of Ba_0.5Sr_1.5Zn₂(Fe_0.96Al_0.04)₁₂O₂₂ were synthesized by solid-state reaction method, and structural, magnetic and dielectric properties were investigated. The magnetic data indicate four magnetic spin-order structures exist in the samples. The Curie temperature is found to be 712 K. The sample also exhibits obvious dispersion in dielectric permittivity and dielectric loss values as a function of the frequency at room temperature, which may be interpreted as Maxwell-Wagner type dielectric relaxation.     

The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

The strong correlations between the O/Zn ratio and carbon impurity incorporation have been observed on the ZnO films grown using N₂O or O₂ as oxygen source in metal-organic chemical vapor deposition (MOCVD). From in-situ mass spectrometric measurements, the O/Zn ratio in the MOCVD reactor is found to decrease to a minimum value as the growth temperature increased till a critical growth temperature T_c, and then increased above T_c due to different dissociation rates of the oxygen and Zn sources. The strongest D and G modes, which are ascribed to carbon clusters sp² related modes, have been observed in Raman scattering spectroscopy for the ZnO samples grown at T_c, indicating the highest incorporation rate of carbon impurity in the samples grown at T_c. Compared with O₂, N₂O has a low dissociation rate and that leads to a lower value of O/Zn ratio, resulting in much stronger D and G modes and higher incorporation rate of carbon impurities in the samples grown at T_c. It is interesting to note that the lowest specific resistances from Hall effect measurements were also obtained on the samples grown at T_c, indicating possible electrical contributions from the formation of carbon clusters, which should be highly conductive regions in ZnO. Furthermore, ionization or addition of H₂ in the case of N₂O can significantly enhance the dissociation of N₂O, with film quality improved significantly. This study shows that a high O/Zn ratio is critical to suppress carbon impurity incorporation and to grow high quality ZnO by MOCVD, especially at low growth temperature.     

Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature

Complex Impedance Spectroscopy has been employed for the study of absorption kinetics at TlGaSe₂ layered crystal under Bias voltage at room temperature. Two relaxations mechanisms have been observed. The crystal has “slow” and “fast” relaxation mechanisms in low and high frequency region, respectively. The complex impedance spectra were fitted by the superposition of two Cole‐Cole types of relaxations. The fast relaxation in the higher frequency region may be due to dipolar relaxation and the slow relaxation in the low frequency region may be due to Maxwell‐Wagner type relaxation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Molecular Relaxation in hi Ghly Ordered Orthogonal Smectic SA,SB and SE Phases

Dielectric relaxation and calorimetric investigations were perforemed on different smectic phases. Discountinuities of the critical frequency were found at both S_A-S_B and S_B-S_E phase transitions. S_A and S_E structures can be regarded as two-dimensional liquid and two-dimensional crystal, respectively. The low frequency dielectric dispersion presented here demonstrates the difference btween the S_E and a three-dimensional cyrstal where this phenomena is absent.