N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据

本文研究了N型掺杂ZnSe/BeTe/ZnSeⅡ型量子阱空间间接发光谱的外加电场依赖性.实验结果表明,其发光谱只显示了一个线性偏振度较低的发光峰.这是由于掺杂电子屏蔽了Ⅱ型量子阱中的内秉电场,并使得两个ZnSe阱层具有相同的势.同时该发光谱具有反玻耳兹曼(inverse-Boltzmann)分布,并且线型和线性偏振度在...     

Influence of growth related thickness fluctuations on the spectral and lateral luminescence intensity distribution in GaAs quantum wells

The effect of low energy exciton sinks on the spectral and spatial luminescence intensity distribution has been investigated in a single quantum well (QW) and a multiple QW structure prepared by growth interrupted molecular beam epitaxy (MBE). Both samples contain growth-related lateral variations of the exciton confinement energy on the order of the exciton diffusion length, which cause a lateral and spectral intensity distribution in cathodoluminescence images.     

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

We report on a detailed investigation on the temperature-dependent behavior of photoluminescence from molecular beam epitaxy (MBE)-grown chlorine-doped ZnSe epilayers. The overwhelming neutral donor bound exciton (Cl⁰X) emission at 2.797 eV near the band edge with a full-width at half-maximum (FWHM) of 13 meV reveals the high crystalline quality of the samples used. In our experiments, the quick quenching of the Cl⁰X line above 200 K is mainly due to the presence of a nonradiative center with a thermal activation energy of 90 meV. The same activation energy and similar quenching tendency of the Cl⁰X line and the I₃ line at 2.713 eV indicate that they originate from the same physical mechanism. We demonstrate for the first time that the dominant decrease of the integrated intensity of the I₃ line is due to the thermal excitation of the “I₃ center”-bound excitons to its free exciton states, leaving the “I₃ centers” as efficient nonradiative centers. The optical performance of ZnSe materials is expected to be greatly improved if the density of the “I₃ center” can be controlled. The decrease in the luminescence intensity at moderately low temperature (30–200 K) of the Cl⁰X line is due to the thermal activation of neutral-donor-bound excitons (Cl⁰X) to free excitons.     

Emission enhancement of Eu(III) and/or Tb(III) ions entrapped in silica xerogels with ZnO nanoparticles by energy transfer

Luminescent materials consisting of Eu(III) and/or Tb(III) ions and quantum dots of the ZnO semiconductor were immobilized in oxide xerogels by the impregnation method. The material’s excitation spectra showed the characteristic absorption bands of lanthanide(III) ions and sharp bands at low wavelengths attributed to excitons in the semiconductor nanoparticles. The luminescence emission of Ln(III) ions (Ln = Tb and/or Eu) showed very low intensity when typical excitation wavelengths for both ions were used (λ_exc = 394 for Eu(III), 350 nm for Tb(III)). In three-component materials (ZnO quantum dots and Ln(III) ions in oxide xerogels) only the Tb(III) emission could be improved by using an excitation wavelength corresponding to the position of one of the exciton absorption bands. The energy transfer enhancing the Eu(III) emission was possible in the four-component system (ZnO quantum dots plus Tb(III) and Eu(III) incorporated into the oxide matrix). The best results of the Eu(III) emission intensity were obtained when the silica xerogel served as the matrix of the four-component material thermally treated at 80 °C.     

引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性

在InGaAs/GaAs表面量子点(SQDs)的GaAs势垒层中引入Si掺杂层,以研究Si掺杂对InGaAs/GaAs SQDs光学特性的影响。荧光发光谱(PL)测量结果显示,InGaAs/GaAs SQDs的发光强烈依赖于Si掺杂浓度。随着掺杂浓度的增加, SQDs的PL峰值位置先红移后蓝移; PL峰值能量与激光激发强度的立方根依赖关系由线性向非线性转变;通过组态交互作用方法发现SQDs的PL峰位蓝移减弱;时间分辨荧光光谱显示了从非线性衰减到线性衰减的转变。以上结果说明Si掺杂能够填充InGaAs SQDs的表面态,并且改变表面费米能级钉扎效应和SQDs的荧光辐射特性。本研究为深入理解与InGaAs SQDs的表面敏感特性关联的物理机制和载流子动力学过程,以及扩大InGaAs/GaAs SQDs传感器的应用提供了实验依据。     

Growth and downconversion luminescence of Ho3+/Yb3+ codoped α‐NaYF4 single crystals by the Bridgman method using a KF flux

Downconversion (DC) luminescence with emission at about 1000 nm under excitation of 448‐nm light in Ho³⁺/Yb³⁺ codoped α‐NaYF₄ single crystal is realized. The crystal was grown by the Bridgman method using KF as an assisting flux in a NaF‐YF₃ system. The energy‐transfer process and quantum cutting (QC) mechanisms are presented through the analysis of the spectra. The energy‐transfer processes of first‐ and second‐order cooperative DC are responsible for the increase of the emission intensity at 1000 nm, and it is the first‐order cooperative DC that is dominant for the DC process. When the Ho³⁺ concentration is fixed at about 0.8 mol%, the optimal concentration for ∼1000 nm emission is 3.02 mol% Yb³⁺ in the current research. The energy‐transfer efficiency and the total quantum efficiency are analyzed through the luminescence decay curves. The maximum quantum cutting efficiency approaches to 184.4% in α‐NaYF₄ single crystals of 0.799 mol% Ho³⁺ and 15.15 mol% Yb³⁺. However, the emission intensity at 1000 nm decreases while the energy‐transfer efficiency from Ho³⁺ to Yb³⁺ increases, which may result from the fluorescence quenching between Ho³⁺ and Yb³⁺ ions, Yb³⁺ and Yb³⁺ ions.     

Absorption and fluorescence of lead in germanate,borate and phosphate glasses

Absorption, emission, excitation spectra and quantum efficiencies of luminescence of lead were obtained in germanate, borate and phosphate glasses. Decay time was measured for fluorescence of lead in germanate glass. The amount of covalency of bonds between lead and the glass matrix is calculated from the nephelauxetic effect.     

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Transmission electron microscopy (TEM), cathodoluminescence in the scanning electron microscope (SEM-CL) and photoluminescence (PL) studies were performed on a 30 nm GaN/2 nm In_0.28Ga _0.72N/2 μm GaN/(0 0 0 1) sapphire single quantum well (SQW) sample. SEM-CL was performed at low temperatures ≈8 K, and at an optimum accelerating voltage, around 4–6 kV to maximise the quantum well (QW) luminescence. The CL in the vicinity of characteristic “V-shaped” pits was investigated. The near band edge (BE) luminescence maps from the GaN showed bright rings inside the boundaries of the pits while the QW luminescence maps showed pits to be regions of low intensity. These observations are consistent with TEM observations showing the absence of QW material in the pits. Variations in both the BE and QW maps in the regions between the pits are ascribed to threading edge dislocations. The CL and PL QW luminescence was observed to blue-shift and broaden with increasing excitation intensity. This was accompanied by decreasing spatial resolution in the CL QW maps implying an increasing carrier diffusion length in the InGaN layer. The reasons for this behaviour are discussed. It is argued that screening of the piezoelectric field in the material may account for these observations.     

Sm3+掺杂天然钠长石(NaAlSi3O8)荧光粉的发光性质研究

采用高温固相法以天然钠长石为基质,Sm3+为激活剂,制备了Sm3+掺杂天然钠长石的光致发光材料.用X射线衍射(XRD)研究了掺杂Sm3+离子对天然钠长石结构进行研究.在室温下测量了光致发光谱并找出了稀土离子的最佳掺杂浓度.样品在402nm激发下有很强的发射带;与近紫外LED芯片匹配,在402nm近紫外光激发下NaAlSi3O8:Sm3+的发射光谱由4个峰组成,发射峰值分别位于569nm、601nm、648nm、713nm.随着Sm3+掺量的增加,样品发光强度先增强后减弱,当Sm3+掺量为0.06mol时发光强度达到最大,浓度猝灭机理为电偶极-电偶极相互作用.分析了不同Sm3+掺杂浓度样品的荧光衰减时间.NaAlSi3O8:Sm3+的色坐标基本不变,位于橙红色区域.     

The impurity ion off-center behavior induced by a localized vibronic Frenkel exciton in a soft-mode crystal

The 3d-4p Frenkel exciton localized at a Mn⁴⁺ impurity ion in BaTiO₃ is considered. The electron and hole of this exciton are correlated, degenerate, and involved in the pair Jahn-Teller effect. Such an exciton is characterized by the significant contribution of indirect electron-hole attraction through lattice (in particular, soft) vibrations to the coupling energy, which is comparable with the Coulomb attraction. Thus, the exciton under consideration is both Coulomb and vibronic excitation. The vibronic contribution increases when approaching the point of soft phonon condensation. It is shown that a vibronic Frenkel exciton allows the off-center behavior of an impurity ion, which is significantly enhanced when approaching the point of soft phonon condensation. As a result, the vibronic Frenkel exciton is a low-lying excitation.

     

Spectroscopy of smooth deuterated carbon films redeposited from plasma discharge in the tokamak T-10

Smooth deuterated carbon films redeposited from a deuterium plasma discharge in the tokamak T-10 vacuum chamber have been investigated by different spectroscopic methods and temperature measurements. The photoluminescence excitation spectra of sp ³-sp ² nanostructures of tokamak films and sp ² nanostructures of fullerite C60 films are compared. The effect of defect states on the photoluminescence and its temperature quenching is discussed. It is concluded that the mechanism of thermal luminescence quenching for smooth deuterated tokamak films is close to the corresponding mechanism for amorphous a-C:H films.

     

Optical properties of bismuth in germanate,borax and phosphate glasses

Absorption, emission, excitation spectra and quantum efficiencies of luminescence of bismuth were obtained in germanate, borax and phosphate glasses. Decay times were measured for fluorescence of bismuth in germanate glass at room temperature and liquid air temperature. A non-exponential decay of fluorescence at room temperature is observed. A thermal equilibrium between the ³P₁ and ³P₀ states is discussed. The dependence of fluorescence intensity and decay times on temperature is presented. The amount of covalency between bismuth and glass matrix was calculated from the nephelauxetic effect.     

Analysis of Changes in the Intensity of the Intrinsic Luminescence after the Copper Diffusion into Semi-Insulating Undoped GaAs Crystals

An analysis is made of the effect of the copper diffusion into semi-insulating undoped GaAs crystals on the intensity of the intrinsic luminescence. It is shown that the copper diffusion into semi-insulating undoped GaAs crystals could lead both to an increase and to a decrease in the intrinsic luminescence intensity. Analytical expressions connecting the value and the sign of the effect observed with the recombination parameters of crystals pointed and also with the intensity of luminescence excitation are obtained.     

Size dependent photoluminescence of SiC nanocrystals

The paper presents the results of porous SiC study using photoluminescence and scanning electronic microscopy. It is shown that the intensity of defect-related PL bands (2.08, 2.27, 2.44 and 2.63 eV) increases monotonically with the rise of PSiC thickness from 2.1 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Photoluminescence intensity stimulation for surface defects is attributed to rise of defect concentrations with increasing of porous layer thickness and to realization of the hot carrier ballistic mechanism at surface defect excitation. Intensity enhancement for exciton-related PL bands (2.79, 2.98 and 3.26 eV ) is attributed to increasing the exciton recombination rate as result of exciton weak confinement in big size SiC NCs of different polytypes (6H–PSiC with inclusions of 15R- and 4H–PSiC).     

白光发光二极管用CaAl2B2O7:Eu3+微晶的发光性质

利用高温固相法合成了CaAl2B2O7:Eu3+微晶.X射线衍射分析表明我们得到了纯相的CaAl2B2O7基质.样品在近紫外光和蓝光激发下能发出红光.发射光谱的主峰位于614nm,对应于Eu3+的5D0→7F2跃迁.激发光谱中两个主峰位于401nm和471nm,分别与紫外和蓝光LED相匹配.并研究了电荷补偿剂和Eu3+的浓度对样品发光强度的影响.所有掺入电荷补偿剂(Li+,Na+和K+)样品的发光强度都比没有掺入电荷补偿剂的样品高.其中掺入Li+的样品的发光强度最高.Eu3+的最佳浓度为6;.CaAl2B2O7:Eu3+是一种有应用前景的白光LED用红色荧光粉.     

Fracture-induced luminescence in Alkali Halides

Crack propagation in dielectric solids is connected with many structural and electronic excitation processes. In order to obtain some information on the elementary excitation mechanism, crack velocity and fracture-induced luminescence in LiF and NaF (as received; doped; X-irradiated) under high vacuum conditions were correlated. Time-resolved crack velocity measurements revealed the usually discontinuous manner of crack propagation; maximum crack velccities of 3800 m/s (LiF) and 3000 m/s (NaF) were observed. Luminescence excitation in the X-irradiated samples occured at slow crack motion i.e. for increased plastic processes in the crack tip zone. The luminescence was explained by the recombination of stabilized radiation defects (F-centres and interstitial halogen atoms) involving a radiative exciton decay. The recombination is triggered by the crack via mobilization of the recombination partners by dislocations or lattice deformation processes.     

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

The photoluminescence (PL) emission from an epi‐structure containing an atomically ordered GaInP₂ layer and a GaAs layer was studied under excitation power densities of 0.03 – 3 W/cm²at temperatures of 10 to 300 K. The quenching of the integrated PL intensity from both: the GaInP₂and the GaAs layers is stronger under low excitation, than under high excitation density. The temperature dependence, however, have different shapes being the PL decay observed for the GaInP₂ layer stronger than that for the GaAs layer. Comparing the temperature dependence of the PL intensity from the ordered GaInP₂ and the GaAs layers under different excitation densities and analyzing them together, we conclude that the inhomogeneity of the ordered layer is responsible for the different temperature behavior of the GaInP₂ alloy PL emission. To explain the experimentally observed PL intensity temperature dependence an additional nonradiative recombination mechanism due to a thermally activated escape of the carriers from its confinement within regions of lower bandgap has to be taken into account. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The Absorption,Fluorescence and Phosphorescence and Phosphorescence of Single Crystals of 1,2,4,5-Tetrachlorobenzene and 1,4-Dichlorobenzene at Low Temperatures

Abstract

The emission spectra of ultra pure single crystals of 1, 2, 4, 5. tetrachlorobenzene (TCB) and 1, 4-dichlorobenzene (DCB) at temperatures from 4.2°K upwards are reported. In addition, by use of the phosphorescence excitation technique the singlet-triplet absorption spectrum at 4.2°K has been obtained.

The phosphorescence emission of TCB at 4.2°K occurs predominantly from a defect origin “X” situated 48 cm^?1 below the triplet exciton band. The triplet exciton energy level is at 26676 cm^?1 from both emission and absorption studies. This is the triplet emission origin when the crystal is above 12°K. The temperature dependence of the emission intensity from the defect has an activation energy of 40±8 cm^?1. This value is consistent with our suggestion of thermal depopulation of the traps.

Single crystals of DCB show strong excimer emission and weak triplet exciton emission. There is no evidence for trapping levels. The triplet exciton emission. There is no evidence for trapping levels. The triplet exciton origin is 27890 cm^?1 from both emission and absorption studies.

Weak fluorescence (φ < 10⁰²) is detected from both TCB and DCB.

Vibrational analyses are reported for the absorption, fluorescence and phosphorescence spectra.     

The Wannier-Mott exciton’s dynamic properties without limitations on the magnitudes of the wave vectors of carriers

Abstract

Most often, the excitation of the Wannier-Mott excitons’ type is generated by electromagnetic action when the electron from the valence band passes into the conduction band. The influence of a magnitude wave vector for the exciton dynamic on the wave vector of the dynamics of the internal relative motion of the carriers is considered. It is shown that due to the effect of the field of intra-crystalline stresses on the exciton movement, a substantial displacement of the exciton spectrum may occur. Estimates of the possible magnitude of such a displacement were made.     

表面活性剂对水热法合成ZnS:Cu,Al纳米晶光致发光特性的影响

采用水热法直接合成了ZnS∶Cu,Al纳米荧光粉,并且系统研究了加入表面活性剂在不同S/Zn下,清洗样品和不清洗样品的结晶性、傅立叶红外光谱(FT-IR)及光致发光(PL)光谱.XRD和TEM测试结果表明:合成纳米晶为纯立方相结构,球形纳米晶尺寸约15 nm, 尺寸分布窄,分散性好.未清洗样品的结晶性比清洗样品的好,且加入表面活性剂和未清洗都导致粒径增大,影响纳米材料的表面态.改变[S~(2-)]/[Zn~(2+)]物质的量比、清洗和加入表面活性剂都会影响材料的PL强度.这说明其发光机理为紫外光激发材料表面的发光中心,即PL强度决定于纳米材料的表面态.